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1. 发明申请

US20120164058A1 METHOD FOR MANUFACTURING GALLIUM NITRIDE CRYSTAL AND GALLIUM NITRIDE WAFER 审中-公开
标题翻译：制造氮化镓晶体和氮化铝膜的方法
公开(公告)号：US20120164058A1
公开(公告)日：2012-06-28
申请号：US13402131
申请日：2012-02-22
申请人： Tomoki UEMURA , Takashi SAKURADA , Shinsuke FUJIWARA , Takuji OKAHISA , Koji UEMATSU , Hideaki NAKAHATA
发明人： Tomoki UEMURA , Takashi SAKURADA , Shinsuke FUJIWARA , Takuji OKAHISA , Koji UEMATSU , Hideaki NAKAHATA
IPC分类号： C01B21/06 , C30B19/12 , C30B23/02
CPC分类号： H01L21/02623 , C30B25/186 , C30B25/20 , C30B29/406 , H01L21/02389 , H01L21/0254 , H01L21/0262 , H01L21/02658
摘要： There is provided a method for fabricating a gallium nitride crystal with low dislocation density, high crystallinity, and resistance to cracking during polishing of sliced pieces by growing the gallium nitride crystal using a gallium nitride substrate including dislocation-concentrated regions or inverted-polarity regions as a seed crystal substrate. Growing a gallium nitride crystal 79 at a growth temperature higher than 1,100° C. and equal to or lower than 1,300° C. so as to bury dislocation-concentrated regions or inverted-polarity regions 17a reduces dislocations inherited from the dislocation-concentrated regions or inverted regions 17a, thus preventing new dislocations from occurring over the dislocation-concentrated regions or inverted-polarity regions 17a. This also increases the crystallinity of the gallium nitride crystal 79 and its resistance to cracking during the polishing.
摘要翻译：提供了通过使用包括位错集中区域或反极性区域的氮化镓衬底生长氮化镓晶体来制造在切片的研磨期间具有低位错密度，高结晶度和耐龟裂性的氮化镓晶体的方法，晶种基片。在高于1100℃并且等于或低于1300℃的生长温度下生长氮化镓晶体79，以便掩埋位错集中区域或反极性区域17a减少从位错集中区域遗留的位错或反转区域17a，从而防止在位错集中区域或反极性区域17a上发生新的位错。这也增加了氮化镓晶体79的结晶度及其在抛光过程中的抗开裂性。

2. 发明申请

US20100314625A1 GaN Single-Crystal Mass and Method of Its Manufacture, and Semiconductor Device and Method of Its Manufacture 有权
标题翻译： GaN单晶体及其制造方法，半导体器件及其制造方法
公开(公告)号：US20100314625A1
公开(公告)日：2010-12-16
申请号：US12797617
申请日：2010-06-10
申请人： Hideaki NAKAHATA , Shinsuke FUJIWARA , Takashi SAKURADA , Yoshiyuki YAMAMOTO , Seiji NAKAHATA , Tomoki UEMURA
发明人： Hideaki NAKAHATA , Shinsuke FUJIWARA , Takashi SAKURADA , Yoshiyuki YAMAMOTO , Seiji NAKAHATA , Tomoki UEMURA
IPC分类号： H01L29/20 , H01L21/20 , C01B21/06 , C30B23/00
CPC分类号： H01L29/872 , C30B25/00 , C30B29/406 , H01L21/02008 , H01L21/0237 , H01L21/0254 , H01L21/0262 , H01L29/2003 , H01L29/205
摘要： Affords a GaN single-crystal mass, a method of its manufacture, and a semiconductor device and method of its manufacture, whereby when the GaN single-crystal mass is being grown, and when the grown GaN single-crystal mass is being processed into a substrate or like form, as well as when an at least single-lamina semiconductor layer is being formed onto a single-crystal GaN mass in substrate form to manufacture semiconductor devices, cracking is controlled to a minimum. The GaN single-crystal mass 10 has a wurtzitic crystalline structure and, at 30° C., its elastic constant C11 is from 348 GPa to 365 GPa and its elastic constant C13 is from 90 GPa to 98 GPa; alternatively its elastic constant C11 is from 352 GPa to 362 GPa.
摘要翻译：提供GaN单晶体，其制造方法以及其制造的半导体器件及其制造方法，由此当生长GaN单晶质量时，并且当将生长的GaN单晶体块加工成衬底或类似形式，以及当至少单层GaN半导体层以衬底形式形成在单晶GaN块上以制造半导体器件时，将裂纹控制到最小。 GaN单晶块10具有纤锌矿结晶结构，在30℃下，其弹性常数C11为348GPa至365GPa，其弹性常数C13为90GPa至98GPa; 或者其弹性常数C11为352GPa至362GPa。

3. 发明申请

US20110057197A1 GaN SINGLE CRYSTAL SUBSTRATE AND METHOD OF MANUFACTURING THEREOF AND GaN-BASED SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF 有权
标题翻译： GaN单晶基板及其制造方法和GaN基半导体器件及其制造方法
公开(公告)号：US20110057197A1
公开(公告)日：2011-03-10
申请号：US12817753
申请日：2010-06-17
申请人： Shinsuke FUJIWARA , Koji Uematsu , Hideki Osada , Seiji Nakahata
发明人： Shinsuke FUJIWARA , Koji Uematsu , Hideki Osada , Seiji Nakahata
IPC分类号： H01L29/20 , C30B25/18 , H01L21/20
CPC分类号： H01L29/2003 , C30B25/20 , C30B29/406 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L29/36 , H01L33/0075 , H01L33/16
摘要： A GaN single crystal substrate has a main surface with an area of not less than 10 cm2, the main surface has a plane orientation inclined by not less than 65° and not more than 85° with respect to one of a (0001) plane and a (000-1) plane, and the substrate has at least one of a substantially uniform distribution of a carrier concentration in the main surface, a substantially uniform distribution of a dislocation density in the main surface, and a photoelasticity distortion value of not more than 5×10−5, the photoelasticity distortion value being measured by photoelasticity at an arbitrary point in the main surface when light is applied perpendicularly to the main surface at an ambient temperature of 25° C. Thus, the GaN single crystal substrate suitable for manufacture of a GaN-based semiconductor device having a small variation of characteristics can be obtained.
摘要翻译： GaN单晶衬底具有面积不小于10cm 2的主表面，主表面相对于（0001）面和（0001）面之一具有倾斜不小于65°且不大于85°的面取向（000-1）面，并且基板具有在主表面中载流子浓度基本均匀分布中的至少一个，主表面中位错密度的基本均匀分布，并且光弹性变形值不大在5×10-5以下的情况下，在25℃的环境温度下垂直于主表面照射主表面的任意点时，通过光弹性测定光弹性失真值。因此，GaN单晶基板适合可以获得具有小的特性变化的GaN基半导体器件的制造。

4. 发明申请

US20110108852A1 GaN SUBSTRATE AND LIGHT-EMITTING DEVICE 有权
标题翻译： GaN衬底和发光器件
公开(公告)号：US20110108852A1
公开(公告)日：2011-05-12
申请号：US12981939
申请日：2010-12-30
申请人： Shinsuke FUJIWARA , Toshihiro Kotani , Fumitake Nakanishi , Seiji Nakahata , Koji Uematsu
发明人： Shinsuke FUJIWARA , Toshihiro Kotani , Fumitake Nakanishi , Seiji Nakahata , Koji Uematsu
IPC分类号： H01L33/32
CPC分类号： C30B25/00 , C30B29/406 , H01L33/32
摘要： The present GaN substrate can have an absorption coefficient not lower than 7 cm−1 for light having a wavelength of 380 nm and light having a wavelength of 1500 nm, an absorption coefficient lower than 7 cm−1 for at least light having a wavelength not shorter than 500 nm and not longer than 780 nm, and specific resistance not higher than 0.02 Ωcm. Here, the absorption coefficient for light having a wavelength not shorter than 500 nm and not longer than 780 nm can be lower than 7 cm−1. Thus, a GaN substrate having a low absorption coefficient for light having a wavelength within a light emission wavelength region of a light-emitting device and specific resistance not higher than a prescribed value and being suitable for the light-emitting device is provided.
摘要翻译：对于波长为380nm的光和波长为1500nm的光，对于至少具有波长不为波长的光，吸收系数低于7cm -1，本GaN基板的吸收系数不低于7cm -1 小于500nm且不大于780nm，电阻率不高于0.02＆OHgr; cm。这里，波长不小于500nm且不大于780nm的光的吸收系数可以低于7cm -1。因此，提供了具有低于发光器件的发光波长区域内的波长的光的吸收系数低的规定值并且不高于规定值并且适用于发光器件的GaN衬底。

5. 发明申请

US20120122301A1 METHOD OF MANUFACTURING GaN-BASED FILM 有权
标题翻译：制造GaN基膜的方法
公开(公告)号：US20120122301A1
公开(公告)日：2012-05-17
申请号：US13283963
申请日：2011-10-28
申请人： Shinsuke FUJIWARA , Koji Uematsu , Yoshiyuki Yamamoto , Issei Satoh
发明人： Shinsuke FUJIWARA , Koji Uematsu , Yoshiyuki Yamamoto , Issei Satoh
IPC分类号： H01L21/20
CPC分类号： C30B29/406 , C30B25/02 , H01L33/007 , H01L33/0079
摘要： A method of manufacturing a GaN-based film includes the steps of preparing a composite substrate, the composite substrate including a support substrate in which a coefficient of thermal expansion in its main surface is more than 0.8 time and less than 1.0 time as high as a coefficient of thermal expansion of GaN crystal in a direction of a axis and a single crystal film arranged on a main surface side of the support substrate, the single crystal film having threefold symmetry with respect to an axis perpendicular to a main surface of the single crystal film, and forming a GaN-based film on the main surface of the single crystal film in the composite substrate, the single crystal film in the composite substrate being an SiC film. Thus, a method of manufacturing a GaN-based film capable of manufacturing a GaN-based film having a large main surface area and less warpage without crack being produced in a substrate is provided.
摘要翻译：制造GaN基膜的方法包括以下步骤：制备复合基板，该复合基板包括其主表面的热膨胀系数大于0.8倍且小于1.0倍的支撑基板 GaN晶体沿着轴方向的热膨胀系数和布置在支撑基板的主表面侧的单晶膜，单晶膜相对于垂直于单晶主表面的轴线具有三重对称性并且在复合衬底中的单晶膜的主表面上形成GaN基膜，复合衬底中的单晶膜是SiC膜。因此，提供了一种制造能够制造基板上具有大的主表面积和较少翘曲的GaN基膜的GaN基膜的方法。

6. 发明申请

US20120118222A1 METHOD OF MANUFACTURING GaN-BASED FILM 审中-公开
标题翻译：制造GaN基膜的方法
公开(公告)号：US20120118222A1
公开(公告)日：2012-05-17
申请号：US13283820
申请日：2011-10-28
申请人： Shinsuke FUJIWARA , Koji Uematsu , Yoshiyuki Yamamoto , Issei Satoh
发明人： Shinsuke FUJIWARA , Koji Uematsu , Yoshiyuki Yamamoto , Issei Satoh
IPC分类号： C30B19/00 , C30B23/02 , C30B25/02
CPC分类号： C30B29/406 , C30B25/02 , C30B25/18 , H01L21/02378 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02658 , H01L33/007
摘要： A method of manufacturing a GaN-based film includes the steps of preparing a composite substrate, the composite substrate including a support substrate in which a coefficient of thermal expansion in its main surface is more than 1.0 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal in a direction of a axis and a single crystal film arranged on a main surface side of the support substrate, the single crystal film having threefold symmetry with respect to an axis perpendicular to a main surface of the single crystal film, and forming a GaN-based film on the main surface of the single crystal film in the composite substrate, the single crystal film in the composite substrate being an SiC film. Thus, a method of manufacturing a GaN-based film capable of manufacturing a GaN-based film having a large main surface area and less warpage is provided.
摘要翻译：制造GaN基膜的方法包括以下步骤：制备复合基板，所述复合基板包括支撑基板，其主表面的热膨胀系数大于1.0倍且小于其主表面的1.2倍 GaN晶体沿着轴方向的热膨胀系数和布置在支撑基板的主表面侧的单晶膜，单晶膜相对于垂直于单晶主表面的轴线具有三重对称性并且在复合衬底中的单晶膜的主表面上形成GaN基膜，复合衬底中的单晶膜是SiC膜。因此，提供了一种制造能够制造具有大的主表面积和较少翘曲的GaN基膜的GaN基膜的方法。

7. 发明申请

US20130071643A1 SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：碳化硅基材及其制造方法
公开(公告)号：US20130071643A1
公开(公告)日：2013-03-21
申请号：US13605265
申请日：2012-09-06
申请人： Shin HARADA , Shinsuke FUJIWARA , Taro NISHIGUCHI
发明人： Shin HARADA , Shinsuke FUJIWARA , Taro NISHIGUCHI
IPC分类号： C30B23/02 , C01B31/36
CPC分类号： C30B23/025 , C30B23/005 , C30B29/36 , C30B35/007 , H01L21/02378 , H01L21/02433 , H01L21/02529 , H01L21/02631
摘要： A silicon carbide substrate capable of stably forming a device of excellent performance, and a method of manufacturing the same are provided. A silicon carbide substrate is made of a single crystal of silicon carbide, and has a width of not less than 100 mm, a micropipe density of not more than 7 cm−2, a threading screw dislocation density of not more than 1×104 cm−2, a threading edge dislocation density of not more than 1×104 cm−2, a basal plane dislocation density of not more than 1×104 cm−2, a stacking fault density of not more than 0.1 cm−1, a conductive impurity concentration of not less than 1×1018 cm−2, a residual impurity concentration of not more than 1×1016 cm−2, and a secondary phase inclusion density of not more than 1 cm−3.
摘要翻译：提供能够稳定地形成优异性能的器件的碳化硅衬底及其制造方法。碳化硅衬底由碳化硅单晶制成，宽度不小于100mm，微管密度不超过7cm -2，螺纹位错密度不大于1×104cm -2，螺纹刃位错密度不大于1×104cm-2，基面位错密度不大于1×104cm-2，堆垛层错密度不大于0.1cm-1，导电杂质浓度不小于1×1018cm-2，残留杂质浓度不大于1×1016cm-2，次相包含密度不大于1cm-3。

8. 发明申请

US20120319125A1 SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：碳化硅基材及其制造方法
公开(公告)号：US20120319125A1
公开(公告)日：2012-12-20
申请号：US13494317
申请日：2012-06-12
申请人： Tsutomu HORI , Shin HARADA , Keiji ISHIBASHI , Shinsuke FUJIWARA
发明人： Tsutomu HORI , Shin HARADA , Keiji ISHIBASHI , Shinsuke FUJIWARA
IPC分类号： H01L29/16 , H01L21/31
CPC分类号： H01L29/7802 , C30B29/36 , C30B33/06 , H01L21/02378 , H01L21/02428 , H01L21/02433 , H01L21/02529 , H01L21/02587 , H01L21/02601 , H01L21/02628 , H01L21/02667 , H01L29/1608 , H01L29/66068 , H01L29/8083 , H01L29/872
摘要： A first single crystal substrate has a first side surface and it is composed of silicon carbide. A second single crystal substrate has a second side surface opposed to the first side surface and it is composed of silicon carbide. A bonding portion connects the first and second side surfaces to each other between the first and second side surfaces. At least a part of the bonding portion is made of particles composed of silicon carbide and having a maximum length not greater than 1 μm.
摘要翻译：第一单晶基板具有第一侧表面，并且由碳化硅构成。第二单晶基板具有与第一侧面相对的第二侧面，由碳化硅构成。接合部分将第一和第二侧表面彼此连接在第一和第二侧表面之间。结合部的至少一部分由碳化硅构成，最大长度不大于1μm。

9. 发明申请

US20120308758A1 SILICON CARBIDE CRYSTAL INGOT, SILICON CARBIDE CRYSTAL WAFER, AND METHOD FOR FABRICATING SILICON CARBIDE CRYSTAL INGOT 有权
标题翻译：硅碳化硅晶体，碳化硅晶体晶片，以及制造碳化硅晶体晶体的方法
公开(公告)号：US20120308758A1
公开(公告)日：2012-12-06
申请号：US13475360
申请日：2012-05-18
申请人： Tsutomu HORI , Makoto SASAKI , Taro NISHIGUCHI , Shinsuke FUJIWARA
发明人： Tsutomu HORI , Makoto SASAKI , Taro NISHIGUCHI , Shinsuke FUJIWARA
IPC分类号： C30B29/36 , C30B29/66 , C30B23/00
CPC分类号： C30B23/00 , C30B29/36
摘要： A silicon carbide crystal ingot having a surface greater than or equal to 4 inches, having an n-type dopant concentration greater than or equal to 1×1015 atoms/cm3 and less than or equal to 1×1020 atoms/cm3, a metal atom concentration greater than or equal to 1×1014 atoms/cm3 and less than or equal to 1×1018 atoms/cm3, and not exceeding the n-type dopant concentration, and a metal atom concentration gradient less than or equal to 1×1017 atoms/(cm3·mm), a silicon carbide single crystal wafer produced using the ingot, and a method for fabricating the silicon carbide crystal ingot.
摘要翻译：具有大于或等于4英寸的表面，具有大于或等于1×1015原子/ cm3且小于或等于1×1020原子/ cm3的n型掺杂剂浓度的碳化硅晶锭，金属原子浓度大于或等于1×1014原子/ cm3且小于或等于1×1018原子/ cm3，并且不超过n型掺杂剂浓度，并且小于或等于1×1017原子的金属原子浓度梯度 /（cm 3·mm），使用该锭制造的碳化硅单晶晶片和制造碳化硅晶体锭的方法。

10. 发明申请

US20120118226A1 Method of Synthesizing Nitride Semiconductor Single-Crystal Substrate 审中-公开
标题翻译：合成氮化物半导体单晶基板的方法
公开(公告)号：US20120118226A1
公开(公告)日：2012-05-17
申请号：US13350095
申请日：2012-01-13
申请人： Shinsuke FUJIWARA , Seiji NAKAHATA
发明人： Shinsuke FUJIWARA , Seiji NAKAHATA
IPC分类号： C30B25/10
CPC分类号： C30B25/08 , C30B25/02 , C30B29/403
摘要： Fracture toughness of AlGaN single-crystal substrate is improved and its absorption coefficient reduced. A nitride semiconductor single-crystal substrate has a composition represented by the formula AlxGa1-xN (0≦x≦1), and is characterized by having a fracture toughness of (1.2−0.7x) MPa•m1/2 or greater and a surface area of 20 cm2, or, if the substrate has a composition represented by the formula AlxGa1-xN (0.5≦x≦1), by having an absorption coefficient of 50 cm−1 or less in a 350 to 780 nm total wavelength range.
摘要翻译： AlGaN单晶衬底的断裂韧性提高，吸收系数降低。氮化物半导体单晶衬底具有由式Al x Ga 1-x N（0＆nlE; x＆nlE; 1）表示的组成，其特征在于具有（1.2-0.7x）MPa·m1 / 2以上的断裂韧性和表面或者如果基板具有由式Al x Ga 1-x N（0.5＆nlE; x＆nlE; 1）表示的组成，则通过在350至780nm的总波长范围内具有50cm -1以下的吸收系数。

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