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    • 1. 发明授权
    • Multiple-doped oxide cathode material for secondary lithium and
lithium-ion batteries
    • 用于二次锂和锂离子电池的多重掺杂氧化物阴极材料
    • US6040089A
    • 2000-03-21
    • US31849
    • 1998-02-27
    • Vesselin ManevTitus FaulknerWayne BarnetteYuan Gao
    • Vesselin ManevTitus FaulknerWayne BarnetteYuan Gao
    • H01M4/131H01M4/50H01M4/505H01M10/052H01M10/36
    • H01M4/505H01M4/131H01M10/052
    • The present invention provides a positive electrode material for lithium and lithium-ion secondary cells which exhibits good cycleability, reversible specific capacity, and structural stability. The positive electrode material comprises a lithium multi metal oxide having a spinel structure and described by the general formula:Li.sub.1+X Mn.sub.2-Y M.sub.m.sbsb.1.sup.1 M.sub.m.sbsb.2.sup.2 . . . M.sub.m.sbsb.k.sup.k O.sub.4+Zwherein M.sup.1, M.sup.2, . . . M.sup.k are at least two cations different than lithium or manganese, selected from the group consisting of alkaline earth metals, transition metals, B, Al, Si, Ga and Ge;X, Y, m.sub.1,m.sub.2, . . . m.sub.k are numbers between 0 and 0.2;m.sub.1, m.sub.2 and Y are greater than 0;Z is a number between -0.1 and 0.2; andwherein the metals M.sup.1, M.sup.2, . . . M.sup.k and the corresponding values m.sub.1, m.sub.2, . . . m.sub.k satisfy the following equation and inequality: ##EQU1## wherein V.sub.1, V.sub.2, . . . V.sub.k are the corresponding valence states of the cations M.sup.1, M.sup.2, . . . M.sup.k.
    • 本发明提供一种锂离子二次电池用正极材料,其具有良好的循环性,可逆的比容量和结构稳定性。 正极材料包括具有尖晶石结构并由通式Li1 + XMn2-YMm11Mm22描述的锂多金属氧化物。 。 。 MmkkO4 + Z其中M1,M2,...。 。 。 Mk是选自碱金属,过渡金属,B,Al,Si,Ga和Ge中的至少两种不同于锂或锰的阳离子; X,Y,m1,m2。 。 。 mk是0到0.2之间的数字; m1,m2和Y大于0; Z是-0.1和0.2之间的数字; 并且其中金属M1,M2,...。 。 。 Mk和相应的值m1,m2。 。 。 mk满足以下等式和不等式:其中V1,V2,...。 。 。 Vk是阳离子M1,M2的相应的价态。 。 。 Mk
    • 2. 发明申请
    • PROTECTION CIRCUIT AND A GATE DRIVING CIRCUITRY
    • 保护电路和门驱动电路
    • US20150098160A1
    • 2015-04-09
    • US14394675
    • 2012-04-19
    • Yuan GaoPatrice BesseThierry Laplagne
    • Yuan GaoPatrice BesseThierry Laplagne
    • H02H3/28
    • H02H3/28H03K17/0822H03K17/102
    • A protection circuit and a gate driving circuitry. The protection circuit is for protecting a p-type back-to-back MOS switch. The circuit receives an input driving signal and provides a driving output signal to common gates of the p-type back-to-back MOS switch. The circuit comprises a driving signal insulation switch for disconnecting the common gate of the p-type back-to-back MOS switch from the received input driving signal when the voltage of the common gates is larger than the supply voltage of the circuit. The circuit further comprises a gate source coupling switch for coupling a voltage received at the common source of the p-type back-to-back MOS switch to the common gate if a received voltage at the common sources is larger than a reference voltage Vref.
    • 保护电路和栅极驱动电路。 保护电路用于保护p型背对背MOS开关。 电路接收输入驱动信号,并向p型背对背MOS开关的公共栅极提供驱动输出信号。 该电路包括驱动信号绝缘开关,用于当公共栅极的电压大于电路的电源电压时,从所接收的输入驱动信号中断开p型背对背MOS开关的公共栅极。 该电路还包括一个栅极耦合开关,用于在公共源的接收电压大于参考电压Vref时,将在p型背靠背MOS开关的公共源接收的电压耦合到公共栅极。