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1. 发明专利

JP2013234114A Polycrystalline silicon rod and method for producing the same 有权
标题翻译：多晶硅棒及其制造方法
公开(公告)号：JP2013234114A
公开(公告)日：2013-11-21
申请号：JP2013089133
申请日：2013-04-22
申请人： Wacker Chemie Ag , ワッカーケミーアクチエンゲゼルシャフトWacker Chemie AG
发明人： WEBER MARTIN , DORNBERGER ERICH , KERSCHER MICHAEL , KRAUS HEINZ , REINER PECH
IPC分类号： C01B33/035 , C01B33/02
CPC分类号： C01B33/029 , B02C19/0056 , C01B33/02 , C01B33/035 , C23C16/24 , C23C16/4418 , C30B28/14 , C30B29/06 , Y10T428/12479
摘要： PROBLEM TO BE SOLVED: To provide polycrystalline silicon which is less expensive to produce than compact silicon rod but nevertheless exhibits good performance in a CZ crystal pulling method.SOLUTION: A polycrystalline silicon rod has a total diameter of at least 150 mm, and includes a core (A) having porosity of 0 to less than 0.01 around a thin rod, and at least two subsequent regions B and C which differ in porosity by a factor of 1.7 to 23, the outer region C being less porous than the region B.
摘要翻译：要解决的问题：提供比紧凑型硅棒生产成本低的多晶硅，但是在CZ晶体拉制方法中表现出良好的性能。解决方案：多晶硅棒的总直径至少为150mm，并且包括在细棒周围具有0至小于0.01的孔隙度的芯（A），以及孔隙率不同于1.7至23的至少两个随后的区域B和C，外部区域C比区域B多孔。

2. 发明专利

JP2013018701A Protective device for electrode holders in cvd reactors 有权
标题翻译： CVD反应器电极夹持器的保护装置
公开(公告)号：JP2013018701A
公开(公告)日：2013-01-31
申请号：JP2012151123
申请日：2012-07-05
申请人： Wacker Chemie Ag , ワッカーケミーアクチエンゲゼルシャフトWacker Chemie AG
发明人： MUELLER BARBARA , KRAUS HEINZ , MONZ ELMAR , SOFIN MIKHAIL
IPC分类号： C01B33/035 , C23C16/24 , C23C16/44 , H01L21/205
CPC分类号： H01J37/32477 , C01B33/035 , C23C16/4401 , C23C16/46 , H01J37/32559
摘要： PROBLEM TO BE SOLVED: To improve the protection of sealing portions of electrode holders in CVD reactors.SOLUTION: A space between an electrode holder and a bottom plate in the CVD reactor is sealed by means of a sealing material, and the sealing material is protected by a protective body which is an integrated one or is made up of a plurality of parts, and is arranged in a ring-like manner around the electrodes, and the height of the protective body increases at least locally in the direction of the electrode holder.
摘要翻译：要解决的问题：提高CVD反应器中电极保持器的密封部分的保护。解决方案：CVD反应器中的电极夹持器和底板之间的空间通过密封材料密封，并且密封材料由集成的保护体保护或由多个的部件，并且以环状的方式围绕电极布置，并且保护体的高度至少局部地沿着电极保持器的方向增加。版权所有（C）2013，JPO＆INPIT

3. 发明专利

JP2008285403A Polycrystalline silicon rod for zone floating and process for the production thereof 有权
标题翻译：用于区域浮选的多晶硅丝和其生产方法
公开(公告)号：JP2008285403A
公开(公告)日：2008-11-27
申请号：JP2008129618
申请日：2008-05-16
申请人： Wacker Chemie Ag , ワッカーケミーアクチエンゲゼルシャフトWacker Chemie AG
发明人： SOFIN MIKHAIL , FREIHEIT HANS-CHRISTOF , KRAUS HEINZ
IPC分类号： C01B33/02 , C01B33/03
CPC分类号： C30B13/00 , C01B33/035 , C23C16/24 , C30B29/06 , Y10T428/26
摘要： PROBLEM TO BE SOLVED: To provide a polycrystalline silicon rod having a diameter larger than 120 mm for floating zone (FZ) and produced at high yield wherein frequent defect formation is prevented in the pulling up to form an FZ single crystal having the large diameter. SOLUTION: The polysilicon rod having a polycrystalline fine rod present in a zone A of the innermost side, a zone B present to be free from or have few acicular crystals deposited around the fine rod, an outside zone D wherein the surface ratio of the acicular crystals is COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种直径大于120mm的漂浮区（FZ）的多晶硅棒，以高产率生产，其中在提拉时防止频繁的缺陷形成以形成具有直径大
解决方案：具有存在于最内侧的区域A中的多晶细棒的多晶硅棒，存在于其周围不存在或具有少量针状晶体的区域B，外部区域D，其中表面比针状晶体的<7％，针状晶体的长度<15mm，宽度<2mm，外部区域的细晶体的长度在0.2mm以内，并且在区域B与区域之间具有混合区域C D为了平滑地改变区域B的结构以提供区域D来解决问题。版权所有（C）2009，JPO＆INPIT

4. 发明公开

KR20180051627A 다결정질 실리콘 증착용 반응기 审中-公开
公开(公告)号：KR20180051627A
公开(公告)日：2018-05-16
申请号：KR20187010328
申请日：2016-10-11
申请人： WACKER CHEMIE AG
发明人： KRAUS HEINZ , KUTZA CHRISTIAN
IPC分类号： C01B33/035
CPC分类号： C01B33/035
摘要： 본발명은반응기벽에의해측방향및 상방향이정해지고(delimited) 베이스플레이트(base plate)에의해하방향이정해지는다결정질실리콘증착용반응기에관한것이며, 상기반응기는, 베이스플레이트에부착되어있으며전류의직접통과에의해가열가능한복수의필라멘트로드(rod)들, 상기베이스플레이트내의하나이상의개구부(opening)를통과하고실리콘-함유반응기체혼합물을상기반응기내에도입하기위한공급기체시스템, 및상기베이스플레이트내의하나이상의개구부를통과하고배출기체를상기반응기로부터배출하기위한배출기체시스템을포함한다. 본발명은, 공급기체시스템및/또는배출기체시스템이, 금속, 세라믹또는 CFC로제조되고개구부또는메쉬(mesh)를포함하는하나이상의보호요소(protective element)를포함하는것을특징으로한다. 보호요소의개구부및 메쉬는, 공급기체또는배출기체시스템으로부터플러싱(flushing)에의해제거될수 있는실리콘컴포넌트만이상기보호요소아래의공급기체또는배출기체시스템에도달할수 있도록배열된다.

5. 发明公开

KR20180053726A CVD 반응기 내의 전극 홀더를 절연 및 실링하기 위한 장치 审中-公开
公开(公告)号：KR20180053726A
公开(公告)日：2018-05-23
申请号：KR20187010504
申请日：2016-10-10
申请人： WACKER CHEMIE AG
发明人： RENNSCHMID DOMINIK , KRAUS HEINZ , KUTZA CHRISTIAN
IPC分类号： C23C16/44 , C01B33/035 , C23C16/24 , H01J37/32
CPC分类号： C23C16/24 , C01B33/035 , C23C16/4409 , C23C16/4418
摘要： 본발명은필라멘트로드를수용하기에적합하고, 베이스플레이트의리세스내에장착되는전기전도성재료로제조되는전극홀더상에배치되는전극을포함하는 CVD 반응기에서전극홀더를절연및 실링하기위한장치에관한것이고, 여기서전극홀더와베이스플레이트사이에는전기절연링이제공되고, 상기링은실온에서 0.2 내지 50 W/mK의비열전도율, 120 MPa를초과하는최소굴곡강도, 및실온에서 109 Ωcm를초과하는전기비저항을갖는재료로제조되고, 전극홀더와베이스플레이트사이에서실링을위해 2 개이상의환형실링요소가제공되고, 전기절연링 또는전극홀더또는베이스플레이트는제 1 실링요소가내부에고정되는하나이상의그루브를갖고, 그루브내에고정되지않은하나이상의제 2 실링요소는전기절연링과베이스플레이트사이또는전기절연링과전극홀더사이에제공된다.

6. 发明专利

JP2012092008A Method for producing polycrystalline silicon rod 有权
标题翻译：生产多晶硅棒的方法
公开(公告)号：JP2012092008A
公开(公告)日：2012-05-17
申请号：JP2011231289
申请日：2011-10-21
申请人： Wacker Chemie Ag , ワッカーケミーアクチエンゲゼルシャフトWacker Chemie AG
发明人： FABRY LASZLO , THOMAS ALTMANN , KRAUS HEINZ
IPC分类号： C01B33/037
CPC分类号： C01B33/035
摘要： PROBLEM TO BE SOLVED: To avoid high temperature of a thin rod, contamination due to handling of a cleaned thin rod from intermediate storage to deposition, and insufficient cleaning action of the surface of the attached thin rod, and to improve the prior art.SOLUTION: In a method for producing a polycrystalline silicon rod by deposition of silicon on at least one thin rod in a reactor, before the silicon deposition, hydrogen halide is introduced into the reactor containing at least the one thin rod at a temperature of the thin rod of 400-1,000°C, and is irradiated with UV light, and as a result, halogen and hydrogen radicals are produced and the produced volatile halides and hydrides are removed from the reactor.
摘要翻译：要解决的问题：为了避免细棒的高温，由于处理从中间储存到沉积的清洁的细杆的污染以及附着的薄棒的表面的清洁作用不足，并且改善了先前的艺术。解决方案：在用于通过在反应器中的至少一个薄棒上沉积硅来制造多晶硅棒的方法中，在硅沉积之前，将卤化氢引入反应器中，所述反应器至少包含一个细棒，温度为的400-1000℃的细棒，并用紫外光照射，结果产生卤素和氢自由基，从反应器中除去生成的挥发性卤化物和氢化物。版权所有（C）2012，JPO＆INPIT

7. 发明专利

JP2011195441A Method for manufacturing polycrystalline silicon rod without crack 有权
标题翻译：无裂纹制造多晶硅线的方法
公开(公告)号：JP2011195441A
公开(公告)日：2011-10-06
申请号：JP2011062070
申请日：2011-03-22
申请人： Wacker Chemie Ag , ワッカーケミーアクチエンゲゼルシャフトWacker Chemie AG
发明人： KRAUS HEINZ
IPC分类号： C01B33/02
CPC分类号： C23C16/4418 , C01B33/035 , C23C16/24 , Y10T428/2933
摘要： PROBLEM TO BE SOLVED: To provide an easy method for manufacturing a large-diameter silicon rod, whereby cracks and chipping off are reduced at bridge- and electrode-side rod ends, thereby increasing crack-free rod length after cutting off the rod ends.SOLUTION: The method for producing the polycrystalline silicon rod by deposition from a gas phase on a core rod comprises: attaching at least one disk above the electrode and/or below the bridge of a rod pair, wherein the at least one disk comprises a material having a lower electrical resistivity than that of polycrystalline silicon under deposition conditions.
摘要翻译：要解决的问题：为了提供一种用于制造大直径硅棒的简单方法，从而在桥和电极侧的杆端处减小了裂纹和碎裂，从而在切断杆端之后增加了无裂纹杆的长度。解决方案：通过从芯棒上的气相沉积制造多晶硅棒的方法包括：将至少一个盘附接到电极上方和/或在杆对的桥下方，其中至少一个盘包括材料在沉积条件下具有比多晶硅低的电阻率。

8. 发明专利

JP2011195439A Graphite electrode 有权
标题翻译：石墨电极
公开(公告)号：JP2011195439A
公开(公告)日：2011-10-06
申请号：JP2011057972
申请日：2011-03-16
申请人： Wacker Chemie Ag , ワッカーケミーアクチエンゲゼルシャフトWacker Chemie AG
发明人： KRAUS HEINZ , SOFIN MIKHAIL
IPC分类号： C04B35/52 , C01B33/035
CPC分类号： C01B33/035 , H01M4/96
摘要： PROBLEM TO BE SOLVED: To provide an electrode whose fall probability is remarkably reduced as compared with an electrode having a conventional structure.SOLUTION: In the electrode composed of carbon and having at least two different zones having specific thermal conductivity, an outer zone (A) forms the base of the electrode and carries one or more inner zones, and the innermost zone (B) projects from the zone (A) at the top and has lower specific thermal conductivity than that of the zone (A).
摘要翻译：要解决的问题：提供一种与具有常规结构的电极相比坠落概率显着降低的电极。解决方案：在由碳组成的具有至少两个具有特定导热性的不同区域的电极中，外部区域（A ）形成电极的基部并且承载一个或多个内部区域，并且最内部区域（B）从顶部的区域（A）突出并且具有比区域（A）更低的比热导率。

9. 发明专利

JP2011195438A Conical graphite electrode having raised edge 有权
标题翻译：具有上升边缘的圆形石墨电极
公开(公告)号：JP2011195438A
公开(公告)日：2011-10-06
申请号：JP2011057970
申请日：2011-03-16
申请人： Wacker Chemie Ag , ワッカーケミーアクチエンゲゼルシャフトWacker Chemie AG
发明人： KRAUS HEINZ
IPC分类号： C01B33/035 , B23K35/04
CPC分类号： C25B11/12 , C01B33/035 , C25B1/006
摘要： PROBLEM TO BE SOLVED: To provide an electrode with considerably reduced frequency of overturn compared with electrodes of conventional design.SOLUTION: The carbon electrode has a conical or pyramidal tip and has a means for housing a filament rod, provided that the side of the conical or pyramidal tip is surrounded by at least one raised edge.
摘要翻译：要解决的问题：与常规设计的电极相比，提供具有显着降低的翻转频率的电极。解决方案：碳电极具有锥形或锥形末端，并且具有用于容纳细丝棒的装置，条件是圆锥形或锥形尖端被至少一个凸起的边缘包围。

10. 发明专利

MY180419A DEVICE FOR INSULATING AND SEALING ELECTRODE HOLDERS IN CVD REACTORS 未知
公开(公告)号：MY180419A
公开(公告)日：2020-11-28
申请号：MYPI2017000599
申请日：2015-11-06
申请人： WACKER CHEMIE AG
发明人： KUTZA CHRISTIAN , KRAUS HEINZ , RENNSCHMID DOMINIK
IPC分类号： C23C16/42 , C01B33/035 , C01G25/02 , C23C16/44
摘要： The invention relates to a device for insulating and sealing electrode holders (1) in CVD reactors, comprising an electrode, suitable for receiving a filament rod, on an electrode holder (1) made of an electrically conductive material, attached in a recess of a base plate, wherein an electrically insulating ring (2) is provided between the electrode holder (1) and base plate, said ring being made of a material with a specific heat conductivity at room temperature of between 1 and 200 W/mK, a continuous temperature resistance of greater than or equal to 400?C, and a specific electrical resistance at room temperature of greater than 109 ?cm, wherein at least two ring-shaped sealing elements are provided for sealing between the electrode holder (1) and base plate, wherein the electrically insulating ring (2) or the electrode holder (1) or the base plate have grooves in which the sealing elements (4) are secured, wherein at least one of the sealing elements (4) is secured in a groove formed in the electrode holder (1) or in the base plate, and located above or under the electrically insulating ring (2).

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