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1. 外观设计

USD768802S1 Ammunition cartridge for a firearm 有权
标题翻译：枪支弹药筒
公开(公告)号：USD768802S1
公开(公告)日：2016-10-11
申请号：US29516668
申请日：2015-02-04
申请人： William R. Bowers
设计人： William R. Bowers

2. 发明授权

US09404719B1 Ammunition cartridge and chamber, and tools for making and reloading same 有权
标题翻译：弹药筒和室，以及用于制造和重新加载的工具
公开(公告)号：US09404719B1
公开(公告)日：2016-08-02
申请号：US14726453
申请日：2015-05-29
申请人： William R. Bowers
发明人： William R. Bowers
IPC分类号： F41A21/00 , F42B5/02 , F42B33/04
CPC分类号： F42B5/025 , F41A15/00 , F41A21/12
摘要： A case for an ammunition cartridge including a tubular member having a central axis which includes: a head which includes, a head face which is disposed substantially perpendicular to the central axis, and an extraction groove adjacent to the head face, the extraction groove circumscribing the central axis; a body abutting the head which comprises an internal chamber, a bullet receiving end spaced from the body along the central axis, a convex curved segment abutting the body, the convex curved segment being a first circular curve having a first radius of approximately 0.0263 inches, a frusto-conical segment abutting the convex curved segment, and a concave curved segment abutting the frusto-conical segment, the concave curved segment being a second circular curve having a second radius of approximately 0.1049 inches.
摘要翻译：一种用于包括具有中心轴线的管状构件的弹药盒的壳体，包括：头部，其包括基本上垂直于中心轴线设置的头部面，以及与头部面相邻的提取槽，所述提取槽限定中心轴; 一个与头部相接的主体，其包括一个内部腔室，一个沿着中心轴线与身体隔开的子弹接收端;一个凸起的弯曲区段，其邻接身体;凸形弯曲区段是第一个圆弧形曲线，第一个半径约为0.0263英寸，邻接所述凸曲面段的截头圆锥形段和邻接所述截头圆锥段的凹曲线段，所述凹曲线段是具有大约0.1049英寸的第二半径的第二圆形曲线。

3. 发明申请

US20160223302A1 AMMUNITION CARTRIDGE AND CHAMBER, AND TOOLS FOR MAKING AND RELOADING SAME 审中-公开
标题翻译：弹药盒和工具，以及制造和再生的工具
公开(公告)号：US20160223302A1
公开(公告)日：2016-08-04
申请号：US14726453
申请日：2015-05-29
申请人： William R. Bowers
发明人： William R. Bowers
IPC分类号： F42B5/02 , F42B33/04 , F41A21/00
CPC分类号： F42B5/025 , F41A15/00 , F41A21/12
摘要： A case for an ammunition cartridge comprising a tubular member having a central axis which comprises: a head which comprises, a head face which is disposed substantially perpendicular to the central axis, and an extraction groove adjacent to the head face, the extraction groove circumscribing the central axis; a body abutting the head which comprises an internal chamber, a bullet receiving end spaced from the body along the central axis, a convex curved segment abutting the body, the convex curved segment being a first circular curve having a first radius of approximately 0.0263 inches, a frusto-conical segment abutting the convex curved segment, and a concave curved segment abutting the frusto-conical segment, the concave curved segment being a second circular curve having a second radius of approximately 0.1049 inches.
摘要翻译：一种用于弹药盒的壳体，包括具有中心轴线的管状构件，该管状构件包括：头部，其包括基本上垂直于中心轴线设置的头部面，以及与头部面相邻的提取槽，所述提取槽限定中心轴; 一个与头部相接的主体，其包括一个内部腔室，一个沿着中心轴线与身体隔开的子弹接收端;一个凸起的弯曲区段，其邻接身体;凸形弯曲区段是第一个圆弧形曲线，第一个半径约为0.0263英寸，邻接所述凸曲面段的截头圆锥形段和邻接所述截头圆锥段的凹曲线段，所述凹曲线段是具有大约0.1049英寸的第二半径的第二圆形曲线。

4. 外观设计

USD773009S1 Case for an ammunition cartridge 有权
标题翻译：弹药盒的情况
公开(公告)号：USD773009S1
公开(公告)日：2016-11-29
申请号：US29516665
申请日：2015-02-04
申请人： William R. Bowers
设计人： William R. Bowers

5. 发明授权

US08778210B2 Compositions and methods for the selective removal of silicon nitride 有权
标题翻译：用于选择性去除氮化硅的组合物和方法
公开(公告)号：US08778210B2
公开(公告)日：2014-07-15
申请号：US12520138
申请日：2007-12-21
申请人： Emanuel I. Cooper , Eileen R. Sparks , William R. Bowers , Mark A. Biscotto , Kevin P. Yanders , Michael B. Korzenski , Prerna Sonthalia , Nicole E. Thomas
发明人： Emanuel I. Cooper , Eileen R. Sparks , William R. Bowers , Mark A. Biscotto , Kevin P. Yanders , Michael B. Korzenski , Prerna Sonthalia , Nicole E. Thomas
IPC分类号： C03C15/00 , C03C25/68 , C09K13/00 , C09K13/04 , C09K13/08 , C09K13/06
CPC分类号： H01L21/31111 , B65D85/70 , C09K13/08 , G03F7/422 , H01L21/0206 , H01L2924/0002 , H01L2924/00
摘要： Compositions useful for the selective removal of silicon nitride materials relative to poly-silicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon. The removal compositions include fluorosilicic acid, silicic acid, and at least one organic solvent. Typical process temperatures are less than about 100° C. and typical selectivity for nitride versus oxide etch is about 200:1 to about 2000:1. Under typical process conditions, nickel-based silicides as well as titanium and tantalum nitrides are largely unaffected, and polysilicon etch rates are less than about 1 Å min−1.
摘要翻译：用于相对于多晶硅，氧化硅材料和/或硅化物材料从其上具有相同的微电子器件选择性去除氮化硅材料的组合物。除去组合物包括氟硅酸，硅酸和至少一种有机溶剂。典型的工艺温度小于约100℃，氮化物与氧化物蚀刻的典型选择性为约200:1至约2000:1。在典型的工艺条件下，镍基硅化物以及钛和钽氮化物在很大程度上不受影响，多晶硅蚀刻速率小于约1埃min -1。

6. 外观设计

USD781394S1 Ammunition cartridge for a firearm 有权
标题翻译：枪支弹药筒
公开(公告)号：USD781394S1
公开(公告)日：2017-03-14
申请号：US29516669
申请日：2015-02-04
申请人： William R. Bowers
设计人： William R. Bowers

7. 发明申请

US20100176082A1 COMPOSITIONS AND METHODS FOR THE SELECTIVE REMOVAL OF SILICON NITRIDE 有权
标题翻译：用于选择性去除硅酸盐的组合物和方法
公开(公告)号：US20100176082A1
公开(公告)日：2010-07-15
申请号：US12520138
申请日：2007-12-21
申请人： Emanuel I. Cooper , Eileen Sparks , William R. Bowers , Mark A. Biscotto , Kevin P. Yanders , Michael B. Korzenski , Prerna Sonthalia , Nicole E. Thomas
发明人： Emanuel I. Cooper , Eileen Sparks , William R. Bowers , Mark A. Biscotto , Kevin P. Yanders , Michael B. Korzenski , Prerna Sonthalia , Nicole E. Thomas
IPC分类号： H05K3/00 , C01B33/107 , C09K13/08
CPC分类号： H01L21/31111 , B65D85/70 , C09K13/08 , G03F7/422 , H01L21/0206 , H01L2924/0002 , H01L2924/00
摘要： Compositions useful for the selective removal of silicon nitride materials relative to poly-silicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon. The removal compositions include fluorosilicic acid, silicic acid, and at least one organic solvent. Typical process temperatures are less than about 100° C. and typical selectivity for nitride versus oxide etch is about 200:1 to about 2000:1. Under typical process conditions, nickel-based silicides as well as titanium and tantalum nitrides are largely unaffected, and polysilicon etch rates are less than about 1 Å min−1.
摘要翻译：用于相对于多晶硅，氧化硅材料和/或硅化物材料从其上具有相同的微电子器件选择性去除氮化硅材料的组合物。除去组合物包括氟硅酸，硅酸和至少一种有机溶剂。典型的工艺温度小于约100℃，氮化物与氧化物蚀刻的典型选择性为约200:1至约2000:1。在典型的工艺条件下，镍基硅化物以及钛和钽氮化物在很大程度上不受影响，多晶硅蚀刻速率小于约1埃min -1。

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