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    • 1. 发明公开
    • 위상 차를 사용한 라디오 주파수 거리 측정
    • KR20200133232A
    • 2020-11-26
    • KR20207028843
    • 2019-04-11
    • ANALOG DEVICES INC
    • YU TAO
    • G01S1/68G01S5/06
    • 본개시의실시예들은유닛들사이에서교환된라디오신호들에기초하여라디오유닛들의쌍들간의라디오주파수(RF) 거리측정을위한메커니즘들을설명한다. 대표적인라디오시스템은제1 라디오신호를송신하도록구성된제1 라디오유닛, 및제1 라디오신호를수신하고, 제1 라디오신호에기초하여제2 라디오유닛의기준클록신호를조정하며, 조정된기준클록신호에기초하여생성된제2 라디오신호를송신하도록구성된제2 라디오유닛을포함할수 있다. 이러한라디오시스템은제1 라디오유닛에의해송신된것으로서제1 라디오신호및 제1 라디오유닛에서수신된것으로서제2 라디오신호사이에서의위상차에기초하여제1 및제2 라디오유닛들간의거리를결정하기위한프로세싱유닛을추가로포함할수 있다. 개시된메커니즘들은저-비용, 저-전력라디오유닛들을사용하여정확한 RF 거리측정을가능하게할 수있다.
    • 8. 发明专利
    • Interface protection device with integrated supply clamp and method of forming the same
    • 具有集成电源钳位的接口保护装置及其形成方法
    • JP2014123717A
    • 2014-07-03
    • JP2013229174
    • 2013-11-05
    • Analog Devices Incアナログ・デバイシズ・インコーポレーテッド
    • JAVIER ALEJANDRO SALCEDO
    • H01L27/04H01L21/822H01L27/06
    • H01L29/66378H01L27/0255H01L27/0262H01L27/092H01L29/0692H01L29/735H01L29/78H01L29/861
    • PROBLEM TO BE SOLVED: To provide an interface protection device with an integrated supply clamp and a method of forming the same.SOLUTION: In certain implementation, an integrated circuit interface protection device comprises: a first diode protection structure; and a first thyristor protection structure electrically connected in parallel between a signal pin and a high power supply. Additionally, the protection device includes a second diode protection structure and a second thyristor protection structure electrically connected in parallel between the signal pin and a low power supply. Furthermore, the protection device includes a third diode protection structure and a third thyristor protection structure electrically connected in parallel between the high power supply and the low power supply. The third thyristor protection structure and the third diode protection structure are synthesized as part of an integrated circuit interface and can share at least a portion of wells and/or diffusion regions associated with the first and second thyristor protection structures.
    • 要解决的问题:提供具有集成电源钳的接口保护装置及其形成方法。解决方案:在某些实现中,集成电路接口保护装置包括:第一二极管保护结构; 以及在信号引脚和高电源之间并联电连接的第一晶闸管保护结构。 此外,保护装置包括第二二极管保护结构和在信号引脚和低电源之间并联电连接的第二晶闸管保护结构。 此外,保护装置包括在高电源和低电源之间并联电连接的第三二极管保护结构和第三晶闸管保护结构。 第三晶闸管保护结构和第三二极管保护结构被合成为集成电路接口的一部分,并且可以共享与第一和第二晶闸管保护结构相关联的阱和/或扩散区域的至少一部分。
    • 9. 发明专利
    • Process of forming microphone using support member
    • 使用支持会员形成麦克风的过程
    • JP2013031228A
    • 2013-02-07
    • JP2012243414
    • 2012-11-05
    • Analog Devices Incアナログ デバイシス, インコーポレイテッド
    • JASON W WEIGOLD
    • H04R19/04B81C1/00H01L29/84H04R31/00
    • B81C1/00944B81B2201/0257H04R19/005
    • PROBLEM TO BE SOLVED: To provide a process of forming a microphone using a support member.SOLUTION: A method of forming a microphone includes forming a backplate, and a flexible diaphragm on at least a portion of a wet etch sacrificial layer. The method also includes adding a wet etch resist material, where the wet etch resist material is positioned between the diaphragm and the backplate to support the diaphragm. Some of the wet etch resist material is not positioned between the diaphragm and backplate. The method further includes removing the sacrificial material before removing any of the wet etch resist material added during the above-mentioned addition. Then, the wet etch resist material is removed substantially entirely after at least part of the sacrificial material is removed.
    • 要解决的问题:提供使用支撑构件形成麦克风的过程。 解决方案:形成麦克风的方法包括在湿蚀刻牺牲层的至少一部分上形成背板和柔性隔膜。 该方法还包括添加湿蚀刻抗蚀剂材料,其中湿蚀刻抗蚀剂材料位于隔膜和背板之间以支撑隔膜。 一些湿蚀刻抗蚀剂材料不位于隔膜和背板之间。 该方法还包括在除去在上述添加期间添加的任何湿蚀刻抗蚀剂材料之前去除牺牲材料。 然后,在除去至少部分牺牲材料之后,基本上完全去除湿蚀刻抗蚀剂材料。 版权所有(C)2013,JPO&INPIT