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1. 发明公开

CN105682769A 岛蚀刻的过滤通道无效
公开(公告)号：CN105682769A
公开(公告)日：2016-06-15
申请号：CN201380080616.8
申请日：2013-10-30
申请人：惠普发展公司 , 有限责任合伙企业
发明人：罗格·A·麦凯 , 帕特里克·W·萨迪克
IPC分类号： B01D39/14 , B01D67/00 , B01D69/02
CPC分类号： B01D29/0093 , B01D35/02 , B01D67/0032 , B01D67/0062 , B01D69/02 , B01D2325/021 , B81B7/0061 , B81C1/00071 , B81C1/00119 , B81C1/00539 , B81C2201/0115 , B81C2201/0135 , B81C2201/014 , C23C14/5873 , C23C18/1603 , C23F1/00 , C23F1/02
摘要：一种方法包括：在衬底上形成蚀刻岛，并将具有蚀刻岛的衬底暴露至与蚀刻岛反应的溶液，以在衬底中形成互连孔隙的过滤通道。过滤通道具有进入衬底的入口和离开衬底的出口。

2. 发明公开

CN108602664A 用于操作MEMS装置的结构参数的MEMS网格有权转让
公开(公告)号：CN108602664A
公开(公告)日：2018-09-28
申请号：CN201680070114.0
申请日：2016-09-29
申请人：麦穆斯驱动有限公司
发明人：罗曼·古铁雷斯 , 托尼·唐 , 刘晓磊 , 王桂芹 , 马修·恩格
IPC分类号： B81B7/04 , B81B5/00 , B81B3/00
CPC分类号： H01L21/76816 , B81B3/0045 , B81B3/007 , B81B7/0006 , B81B7/0029 , B81B2203/0353 , B81B2203/0392 , B81B2207/056 , B81C1/00674 , B81C1/00682 , B81C2201/0112 , B81C2201/0135 , H01L21/768 , H01L21/76898 , H01L23/485 , H01L2924/00 , H01L2924/00014 , H01L2924/0002 , H01L2924/1461 , H01L2924/181
摘要：一种用于控制MEMS装置的结构特性的系统和方法，包括：将多个孔蚀刻到所述MEMS装置的表面中；其中多个孔包括被确定为MEMS装置提供所需的特定的结构特性的一个或多个几何形状。

3. 发明申请

US20170256416A1 ATOMIC LAYER ETCHING OF AL203 USING A COMBINATION OF PLASMA AND VAPOR TREATMENTS 审中-公开
公开(公告)号：US20170256416A1
公开(公告)日：2017-09-07
申请号：US15435838
申请日：2017-02-17
申请人： Lam Research Corporation
发明人： Andreas Fischer , Thorsten Lill , Richard Janek , John Boniface
IPC分类号： H01L21/311 , C23F1/00 , H01J37/32
CPC分类号： H01L21/31122 , B81C2201/0135 , B81C2201/0142 , C23C16/0245 , C23F1/00 , C23F1/12 , C23F4/00 , H01J37/32009 , H01J37/32082 , H01J2237/334 , H01L21/30655 , H01L21/32136
摘要： A method for performing atomic layer etching (ALE) on a substrate, including the following method operations: performing a surface modification operation on a surface of the substrate, the surface modification operation configured to convert at least one monolayer of the substrate surface to a modified layer; performing a removal operation on the substrate surface, the removal operation configured to remove the modified layer from the substrate surface, wherein removing the modified layer occurs via a ligand exchange reaction that is configured to volatilize the modified layer; performing, following the removal operation, a plasma treatment on the substrate surface, the plasma treatment configured to remove residues generated by the removal operation from the substrate surface, wherein the residues are volatilized by the plasma treatment; repeating the foregoing operations until a predefined thickness has been etched from the substrate surface.

4. 发明申请

US20120032304A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120032304A1
公开(公告)日：2012-02-09
申请号：US13275383
申请日：2011-10-18
申请人： Mayumi Yamaguchi , Konami Izumi
发明人： Mayumi Yamaguchi , Konami Izumi
IPC分类号： H01L29/93
CPC分类号： H01L27/1203 , B81C1/00547 , B81C2201/0135 , H01L21/84 , H01L27/016 , H01L27/12 , H01L27/13
摘要： It is an object of the present invention to manufacture a micromachine having a plurality of structural bodies with different functions and to shorten the time required for sacrifice layer etching in a process of manufacturing the micromachine. Another object of the present invention is to prevent a structural layer from being attached to a substrate after the sacrifice layer etching. In other words, an object of the present invention is to provide an inexpensive and high-value-added micromachine by improving throughput and yield. The sacrifice layer etching is conducted in multiple steps. In the multiple steps of the sacrifice layer etching, a part of the sacrifice layer that does not overlap with the structural layer is removed by the earlier sacrifice layer etching and a part of the sacrifice layer that is under the structural layer is removed by the later sacrifice layer etching.
摘要翻译：本发明的目的是制造具有多个具有不同功能的结构体的微型机械，并且缩短在制造微机械过程中牺牲层蚀刻所需的时间。本发明的另一个目的是在牺牲层蚀刻之后防止结构层附着到基底上。换句话说，本发明的目的是通过提高生产量和产量来提供廉价和高附加值的微机械。牺牲层蚀刻以多个步骤进行。在牺牲层蚀刻的多个步骤中，通过较早的牺牲层蚀刻去除与结构层不重叠的牺牲层的一部分，并且在结构层之下的部分牺牲层被后面的部分去除牺牲层蚀刻。

5. 发明申请

US20170320724A1 MEMS GRID FOR MANIPULATING STRUCTURAL PARAMETERS OF MEMS DEVICES 审中-公开
公开(公告)号：US20170320724A1
公开(公告)日：2017-11-09
申请号：US15441887
申请日：2017-02-24
申请人： MEMS Drive, Inc.
发明人： Roman Gutierrez , Tony Tang , Xiaolei Liu , Guiqin Wang , Matthew NG
IPC分类号： B81B7/00 , B81C1/00
CPC分类号： H01L21/76816 , B81B3/0045 , B81B7/0029 , B81B2203/0353 , B81C1/00674 , B81C1/00682 , B81C2201/0112 , B81C2201/0135 , H01L21/768 , H01L21/76898 , H01L23/485 , H01L2924/00 , H01L2924/00014 , H01L2924/0002 , H01L2924/1461 , H01L2924/181
摘要： A system and method for manipulating the structural characteristics of a MEMS device include etching a plurality of holes into the surface of a MEMS device, wherein the plurality of holes comprise one or more geometric shapes determined to provide specific structural characteristics desired in the MEMS device.

6. 发明申请

US20130137195A1 ETCHING APPARATUS AND METHODS 有权
标题翻译：蚀刻装置和方法
公开(公告)号：US20130137195A1
公开(公告)日：2013-05-30
申请号：US13674482
申请日：2012-11-12
申请人： SPTS TECHNOLOGIES LIMITED
发明人： Oliver James Ansell
IPC分类号： H01L21/60
CPC分类号： H01J37/32963 , B81C99/0065 , B81C2201/0135 , B81C2201/0142 , H01J37/32972 , H01L22/26
摘要： A method of etching the whole width of a substrate to expose buried features is disclosed. The method includes etching a face of a substrate across its width to achieve substantially uniform removal of material; illuminating the etched face during the etch process; applying edge detection techniques to light reflected or scattered from the face to detect the appearances of buried features; and modifying the etch in response to the detection of the buried feature. An etching apparatus for etching substrate across its width to expose buried is also disclosed.
摘要翻译：公开了一种蚀刻衬底的整个宽度以暴露掩埋特征的方法。该方法包括在其宽度上蚀刻衬底的表面以实现材料的基本上均匀的去除; 在蚀刻过程中照射蚀刻的面; 将边缘检测技术应用于从脸部反射或散射的光，以检测埋藏特征的外观; 以及响应于所述掩埋特征的检测来修改所述蚀刻。还公开了一种用于蚀刻衬底跨越其宽度以暴露掩埋的蚀刻装置。

7. 发明公开

EP1712515A3 Technique for manufacturing micro-electro mechanical structures 审中-公开
标题翻译：技术制造微机电结构
公开(公告)号：EP1712515A3
公开(公告)日：2011-09-14
申请号：EP06075741.6
申请日：2006-03-30
申请人： Delphi Technologies, Inc.
发明人： Chilcott, Dan W.
IPC分类号： B81B3/00
CPC分类号： B81B3/0072 , B81B2201/0235 , B81B2201/0242 , B81B2201/0264 , B81B2203/0315 , B81B2203/0338 , B81C2201/0135 , B81C2201/014 , B81C2201/017
摘要： A technique (400) for manufacturing a micro-electro mechanical structure includes a number of steps. Initially, a cavity is formed into a first side of a handling wafer (404), with a sidewall of the cavity forming a first angle greater than about 54.7 degrees with respect to a first side of the handling wafer at an opening of the cavity. Then, a bulk etch is performed on the first side of the handling wafer to modify the sidewall of the cavity to a second angle greater than about 90 degrees (406), with respect to the first side of the handling wafer at the opening of the cavity. Next, a second side of a second wafer is bonded to the first side of the handling wafer (408).

8. 发明公开

EP1935009A1 VERFAHREN ZUM BESCHLEUNIGTEN ÄTZEN VON SILIZIUM 审中-公开
标题翻译：方法加速蚀刻硅
公开(公告)号：EP1935009A1
公开(公告)日：2008-06-25
申请号：EP06806773.5
申请日：2006-09-18
申请人： ROBERT BOSCH GMBH
发明人： BENZEL, Hubert , PINTER, Stefan , SCHELLING, Christoph , PIRK, Tjalf , GONSKA, Julian , KLOPF, Frank , LEINENBACH, Christina
IPC分类号： H01L21/306 , H01L21/3213
CPC分类号： H01L21/3065 , B81C1/00531 , B81C2201/0135 , H01L21/26506 , H01L21/266 , H01L21/32135 , H01L21/78
摘要： The invention relates to a method for the plasma free etching of silicon with an etching gas ClF3 (15) or XeF2 and to the use thereof. The silicon comprises one or several areas (20) which are to be etched, as a layer on a substrate (1) or as a substrate material. The silicon is transformed into a mixing semiconductor SiGe (40) by introducing germanium (30, 35) and is etched by supplying etching gas ClF3 (15) or XeF2. The germanium (30, 35) is introduced and the etching gas ClF3 (15) or XeF2 is supplied in a temporally parallel or alternating manner. The invention relates to, in particular, the introduction of germanium (30, 35) by implanting germanium-ions (35) into the silicon.

9. 发明公开

EP3356288A1 MEMS GRID FOR MANIPULATING STRUCTURAL PARAMETERS OF MEMS DEVICES 审中-公开
公开(公告)号：EP3356288A1
公开(公告)日：2018-08-08
申请号：EP16852584.8
申请日：2016-09-29
申请人： Mems Drive Inc.
发明人： GUTIERREZ, Roman , TANG, Tony , LIU, Xiaolei , WANG, Guiqin , NG, Matthew
IPC分类号： B81B7/04 , B81B5/00 , B81B3/00
CPC分类号： H01L21/76816 , B81B3/0045 , B81B7/0029 , B81B2203/0353 , B81C1/00674 , B81C1/00682 , B81C2201/0112 , B81C2201/0135 , H01L21/768 , H01L21/76898 , H01L23/485 , H01L2924/00 , H01L2924/00014 , H01L2924/0002 , H01L2924/1461 , H01L2924/181
摘要： A system and method for manipulating the structural characteristics of a MEMS device include etching a plurality of holes into the surface of a MEMS device, wherein the plurality of holes comprise one or more geometric shapes determined to provide specific structural characteristics desired in the MEMS device.

10. 发明公开

EP1712515A2 Technique for manufacturing micro-electro mechanical structures 审中-公开
标题翻译： Technik zum Herstellen von mikroelektromechanischen Strukturen
公开(公告)号：EP1712515A2
公开(公告)日：2006-10-18
申请号：EP06075741.6
申请日：2006-03-30
申请人： Delphi Technologies, Inc.
发明人： Chilcott, Dan W.
IPC分类号： B81C1/00
CPC分类号： B81B3/0072 , B81B2201/0235 , B81B2201/0242 , B81B2201/0264 , B81B2203/0315 , B81B2203/0338 , B81C2201/0135 , B81C2201/014 , B81C2201/017
摘要： A technique (400) for manufacturing a micro-electro mechanical structure includes a number of steps. Initially, a cavity is formed into a first side of a handling wafer (404), with a sidewall of the cavity forming a first angle greater than about 54.7 degrees with respect to a first side of the handling wafer at an opening of the cavity. Then, a bulk etch is performed on the first side of the handling wafer to modify the sidewall of the cavity to a second angle greater than about 90 degrees (406), with respect to the first side of the handling wafer at the opening of the cavity. Next, a second side of a second wafer is bonded to the first side of the handling wafer (408).
摘要翻译：用于制造微机电结构的技术（400）包括多个步骤。最初，空腔形成处理晶片（404）的第一侧，空腔的侧壁在空腔的开口处相对于处理晶片的第一侧形成大于约54.7度的第一角度。然后，在处理晶片的第一侧上执行体蚀刻，以将腔的侧壁相对于处理晶片的开口处的第一侧相对于第二角度大于约90度（406）腔。接下来，将第二晶片的第二面接合到处理晶片（408）的第一侧。

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