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    • 10. 发明专利
    • Semiconductor device and method of manufacturing the same
    • 半导体器件及其制造方法
    • JP2011060820A
    • 2011-03-24
    • JP2009205756
    • 2009-09-07
    • Fujitsu Ltd富士通株式会社
    • KURAHASHI NAOKOMAKIYAMA KOZO
    • H01L29/812H01L21/338H01L29/41H01L29/423H01L29/49H01L29/778H01L29/78
    • H01L29/42372H01L21/28587H01L21/28593H01L29/2003H01L29/66462H01L29/7783H01L29/7787
    • PROBLEM TO BE SOLVED: To form a lower electrode which is reliably microfabricated more without causing breakage of a gate electrode, by making gentle a degree of inclination of a taper shape of the gate electrode. SOLUTION: A method of manufacturing a semiconductor device includes: forming an insulating film 4 over a semiconductor region 1 having a source electrode 2 and a drain electrode 3; forming laminated resist 8 including a plurality of resist layers 5, 6 and 7 over the insulating film 4; forming an opening 9 in the resist layers 6 and 7 other than the lowest layer in the laminated resist 8; forming a reflow opening 10 in the resist layer 5 as the lowest layer; reflowing a part PTc of the resist layer 5 as the lowest layer exposed in the reflow opening 10 by heating; forming a first gate lower opening 12A in the resist layer 5 as the lowest layer so as to range over an inclination surface 11 formed at the surface of the resist layer 5 as the lowest layer by the reflowing; and forming a gate electrode 13 having a shape depending on the shapes of the opening 9, the inclination surface 11 and the first gate lower opening 12A. COPYRIGHT: (C)2011,JPO&INPIT
    • 要解决的问题:通过使栅电极的锥形形状稍微倾斜一定程度,形成可靠地微加工而不引起栅电极破损的下电极。 解决方案:制造半导体器件的方法包括:在具有源电极2和漏电极3的半导体区域1上形成绝缘膜4; 在绝缘膜4上形成包括多个抗蚀剂层5,6和7的层压抗蚀剂8; 在层压抗蚀剂8中除了最低层以外的抗蚀剂层6和7中形成开口9; 在抗蚀剂层5中形成作为最低层的回流开口10; 通过加热回流作为在回流开口10中暴露的最低层的抗蚀剂层5的部分PTc; 在抗蚀剂层5中形成作为最低层的第一栅极下开口12A,以便通过回流作为最低层形成在抗蚀剂层5的表面上的倾斜表面11的范围; 并且形成具有取决于开口9,倾斜表面11和第一门下开口12A的形状的形状的栅电极13。 版权所有(C)2011,JPO&INPIT