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1. 发明公开

CN107962313A 半导体装置用接合线有权转让
公开(公告)号：CN107962313A
公开(公告)日：2018-04-27
申请号：CN201711344468.2
申请日：2016-05-19
申请人：日铁住金新材料股份有限公司 , 新日铁住金高新材料株式会社
发明人：山田隆 , 小田大造 , 榛原照男 , 大石良 , 斋藤和之 , 宇野智裕
IPC分类号： B23K35/02 , B23K35/30 , C22C5/04 , C22C9/00 , C22C9/04 , C22C9/06 , H01L23/00
CPC分类号： B23K35/0227 , B23K35/3013 , B23K35/302 , B23K2101/40 , B32B15/00 , B32B15/01 , B32B15/018 , C22C5/04 , C22C9/00 , C22C9/04 , C22C9/06 , C23C30/00 , C23C30/005 , H01L24/05 , H01L24/43 , H01L24/45 , H01L24/48 , H01L2224/05624 , H01L2224/43 , H01L2224/4312 , H01L2224/43125 , H01L2224/4321 , H01L2224/4382 , H01L2224/43848 , H01L2224/43986 , H01L2224/45 , H01L2224/45005 , H01L2224/45015 , H01L2224/45105 , H01L2224/45109 , H01L2224/45111 , H01L2224/45113 , H01L2224/45118 , H01L2224/4512 , H01L2224/45147 , H01L2224/45155 , H01L2224/45169 , H01L2224/45173 , H01L2224/45178 , H01L2224/45541 , H01L2224/45565 , H01L2224/45572 , H01L2224/45644 , H01L2224/45664 , H01L2224/48227 , H01L2224/48247 , H01L2224/4845 , H01L2224/48463 , H01L2224/48824 , H01L2224/78 , H01L2224/78251 , H01L2224/85 , H01L2224/85065 , H01L2224/85075 , H01L2224/85203 , H01L2224/85444 , H01L2224/85464 , H01L2924/01005 , H01L2924/01012 , H01L2924/01015 , H01L2924/0102 , H01L2924/01032 , H01L2924/01033 , H01L2924/01034 , H01L2924/01052 , H01L2924/01057 , H01L2924/0665 , H01L2924/0705 , H01L2924/10253 , H01L2924/186 , Y10T428/12868 , Y10T428/12875 , Y10T428/12882 , Y10T428/12889 , Y10T428/12896 , Y10T428/12903 , Y10T428/1291 , Y10T428/2495 , Y10T428/24967 , Y10T428/265 , H01L2924/01028 , H01L2924/0103 , H01L2924/01045 , H01L2924/01049 , H01L2924/01077 , H01L2924/01078 , H01L2924/01031 , H01L2924/0105 , H01L2924/01051 , H01L2924/01083 , H01L2924/01079 , H01L2924/01046 , H01L2924/01029 , H01L2924/01202 , H01L2924/01203 , H01L2924/01204 , H01L2924/00015 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/20752 , H01L2924/00014 , H01L2924/01014 , H01L2924/013 , H01L2924/00013 , H01L2924/20105 , H01L2924/01001 , H01L2924/01007 , H01L2924/00012 , H01L2924/00 , H01L2924/01027 , H01L2924/01047 , H01L2924/01013
摘要：一种半导体装置用接合线，具有Cu合金芯材和形成于其表面的Pd被覆层，可谋求高温下的球接合部的接合可靠性的提高和耐力比(＝最大耐力/0.2％耐力)为1.1～1.6。通过在线中包含赋予高温环境下的连接可靠性的元素来提高在高温下的球接合部的接合可靠性，而且，在对与接合线的线轴垂直的方向的芯材截面测定晶体取向所得到的结果中，通过使线长度方向的晶体取向之中相对于线长度方向角度差为15度以下的晶体取向＜100＞的取向比率为30％以上，使与接合线的线轴垂直的方向的芯材截面的平均结晶粒径为0.9～1.5μm，从而使耐力比为1.6以下。

3. 发明公开

CN1317829A 高频电流抑制型电子元件及其接合线无效
公开(公告)号：CN1317829A
公开(公告)日：2001-10-17
申请号：CN01119279.8
申请日：2001-04-04
申请人：株式会社东金
发明人：吉田荣吉 , 小野裕司 , 龟井浩二
IPC分类号： H01L23/48 , H01L23/552 , H01L23/58 , H01F1/047 , H01F41/14 , H05K3/30 , H05K13/00
CPC分类号： H05K1/0233 , H01L23/4952 , H01L23/66 , H01L24/43 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/745 , H01L2223/6611 , H01L2224/05554 , H01L2224/05568 , H01L2224/05573 , H01L2224/05599 , H01L2224/131 , H01L2224/432 , H01L2224/43826 , H01L2224/43827 , H01L2224/451 , H01L2224/45117 , H01L2224/45118 , H01L2224/45123 , H01L2224/45124 , H01L2224/45138 , H01L2224/45155 , H01L2224/45157 , H01L2224/4516 , H01L2224/45163 , H01L2224/45166 , H01L2224/45179 , H01L2224/45181 , H01L2224/45188 , H01L2224/4554 , H01L2224/456 , H01L2224/45617 , H01L2224/45618 , H01L2224/45623 , H01L2224/45624 , H01L2224/45655 , H01L2224/45657 , H01L2224/4566 , H01L2224/45663 , H01L2224/45666 , H01L2224/45679 , H01L2224/45681 , H01L2224/45686 , H01L2224/45693 , H01L2224/48091 , H01L2224/48247 , H01L2224/49175 , H01L2224/745 , H01L2224/85399 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01018 , H01L2924/01022 , H01L2924/01027 , H01L2924/01028 , H01L2924/0103 , H01L2924/01032 , H01L2924/01038 , H01L2924/01039 , H01L2924/01041 , H01L2924/01072 , H01L2924/01073 , H01L2924/01105 , H01L2924/014 , H01L2924/10161 , H01L2924/10253 , H01L2924/14 , H01L2924/181 , H01L2924/19042 , H01L2924/30107 , H01L2924/3011 , H03H2001/0092 , H01L2924/00 , H01L2924/00012 , H01L2924/013 , H01L2924/01008 , H01L2924/01009 , H01L2924/049 , H01L2924/053 , H01L2224/45015 , H01L2924/207
摘要：本发明提供了高频电流抑制型电子元件及其接合线，当其工作在高频时，也能够完全抑制高频电流，从而防止电磁干扰的发生，半导体集成电路器件(IC)17工作在高频带内以高速运作，预定数量的引脚19具有高频电流抑制器21，以减弱经过引脚自身的高频电流。高频电流抑制器是一个磁性薄膜，其厚度范围在0.3至20微米内，并置于每一个引脚19的整个表面上，包括安装到用于安装(IC)17的印刷线路板23上的安装部分及含有与导电图25相接部分的边缘。在安装集成电路17的印刷线路板23的过程中，通过焊点27使引脚顶端与导电图相连，当工作频带小于几十MHz时，安装部分的附近具有传导性。

4. 发明公开

CN106783785A 功率半导体芯片以及用于制造功率半导体芯片的方法有权
公开(公告)号：CN106783785A
公开(公告)日：2017-05-31
申请号：CN201611035382.7
申请日：2016-11-18
申请人：赛米控电子股份有限公司
发明人： W·M·舒尔茨
IPC分类号： H01L23/49 , H01L21/60
CPC分类号： H01L23/488 , H01L24/03 , H01L24/05 , H01L24/45 , H01L24/85 , H01L2224/05644 , H01L2224/45015 , H01L2224/45147 , H01L2224/4847 , H01L2224/85205 , H01L2924/00014 , H01L2924/2076 , H01L23/49 , H01L24/43 , H01L24/80 , H01L2224/4503 , H01L2224/45118 , H01L2224/45124 , H01L2224/45139 , H01L2224/4516 , H01L2224/45163 , H01L2924/01013 , H01L2924/01026 , H01L2924/01029 , H01L2924/0103 , H01L2924/01046 , H01L2924/01047
摘要：本发明涉及功率半导体芯片，其具有半导体部件主体(2)并且具有多层金属化部(10)，所述金属化部(10)布置在半导体部件主体(2)上并且具有布置在半导体部件主体(2)上方的镍层(6)。本发明还涉及用于制造功率半导体芯片(1)的方法。本发明还涉及功率半导体器件。本发明提供功率半导体芯片(1)，其具有金属化部(10)，在键合期间不设置有厚金属覆盖层的铜线(11)能够可靠地键合到所述金属化部(10)，而不损坏功率半导体芯片(1)。

5. 发明公开

CN106688086A 半导体装置用接合线无效转让
公开(公告)号：CN106688086A
公开(公告)日：2017-05-17
申请号：CN201680002657.9
申请日：2016-05-19
申请人：日铁住金新材料股份有限公司 , 新日铁住金高新材料株式会社
发明人：山田隆 , 小田大造 , 榛原照男 , 大石良 , 斋藤和之 , 宇野智裕
IPC分类号： H01L21/60
CPC分类号： B23K35/0227 , B23K35/3013 , B23K35/302 , B23K2101/40 , B32B15/00 , B32B15/01 , B32B15/018 , C22C5/04 , C22C9/00 , C22C9/04 , C22C9/06 , C23C30/00 , C23C30/005 , H01L24/05 , H01L24/43 , H01L24/45 , H01L24/48 , H01L2224/05624 , H01L2224/43 , H01L2224/4312 , H01L2224/43125 , H01L2224/4321 , H01L2224/4382 , H01L2224/43848 , H01L2224/43986 , H01L2224/45 , H01L2224/45005 , H01L2224/45015 , H01L2224/45105 , H01L2224/45109 , H01L2224/45111 , H01L2224/45113 , H01L2224/45118 , H01L2224/4512 , H01L2224/45147 , H01L2224/45155 , H01L2224/45169 , H01L2224/45173 , H01L2224/45178 , H01L2224/45541 , H01L2224/45565 , H01L2224/45572 , H01L2224/45644 , H01L2224/45664 , H01L2224/48227 , H01L2224/48247 , H01L2224/4845 , H01L2224/48463 , H01L2224/48824 , H01L2224/78 , H01L2224/78251 , H01L2224/85 , H01L2224/85065 , H01L2224/85075 , H01L2224/85203 , H01L2224/85444 , H01L2224/85464 , H01L2924/01005 , H01L2924/01012 , H01L2924/01015 , H01L2924/0102 , H01L2924/01032 , H01L2924/01033 , H01L2924/01034 , H01L2924/01052 , H01L2924/01057 , H01L2924/0665 , H01L2924/0705 , H01L2924/10253 , H01L2924/186 , Y10T428/12868 , Y10T428/12875 , Y10T428/12882 , Y10T428/12889 , Y10T428/12896 , Y10T428/12903 , Y10T428/1291 , Y10T428/2495 , Y10T428/24967 , Y10T428/265 , H01L2924/01028 , H01L2924/0103 , H01L2924/01045 , H01L2924/01049 , H01L2924/01077 , H01L2924/01078 , H01L2924/01031 , H01L2924/0105 , H01L2924/01051 , H01L2924/01083 , H01L2924/01079 , H01L2924/01046 , H01L2924/01029 , H01L2924/01202 , H01L2924/01203 , H01L2924/01204 , H01L2924/00015 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/20752 , H01L2924/00014 , H01L2924/01014 , H01L2924/013 , H01L2924/00013 , H01L2924/20105 , H01L2924/01001 , H01L2924/01007 , H01L2924/00012 , H01L2924/00 , H01L2924/01027 , H01L2924/01047 , H01L2924/01013
摘要：一种半导体装置用接合线，具有Cu合金芯材和形成于其表面的Pd被覆层，可谋求高温下的球接合部的接合可靠性的提高和耐力比(＝最大耐力/0.2％耐力)为1.1～1.6。通过在线中包含赋予高温环境下的连接可靠性的元素来提高在高温下的球接合部的接合可靠性，而且，在对与接合线的线轴垂直的方向的芯材截面测定晶体取向所得到的结果中，通过使线长度方向的晶体取向之中相对于线长度方向角度差为15度以下的晶体取向＜100＞的取向比率为30％以上，使与接合线的线轴垂直的方向的芯材截面的平均结晶粒径为0.9～1.5μm，从而使耐力比为1.6以下。

7. 发明公开

EP0924320A3 Method of fabricating a copper plated aluminium wire, a plated aluminium wire, an insulating plated aluminium wire, methods of fabricating thereof, and a composite lightweighted plated aluminium wire 有权
标题翻译：一种用于生产铜包铝线的方法，包铝线，绝缘的，包铝线，制造方法，和更容易包层复合铝线
公开(公告)号：EP0924320A3
公开(公告)日：2001-09-12
申请号：EP98308393.2
申请日：1998-10-14
申请人： Totoku Electric Co., Ltd.
发明人： Kitazawa, Hiroshi , Yamaguchi, Tatsuo , Tsukada, Etsuro
IPC分类号： C25D5/44 , C25D5/10 , C25D5/50
CPC分类号： H01L24/45 , C25D5/10 , C25D5/44 , C25D5/50 , H01L24/43 , H01L2224/43 , H01L2224/431 , H01L2224/45015 , H01L2224/45118 , H01L2224/45124 , H01L2224/45573 , H01L2224/45574 , H01L2224/45601 , H01L2224/45618 , H01L2224/45624 , H01L2224/45639 , H01L2224/45644 , H01L2224/45647 , H01L2224/45655 , H01L2224/4566 , H01L2224/45664 , H01L2224/45666 , H01L2224/45669 , H01L2224/45671 , H01L2924/00014 , H01L2924/01006 , H01L2924/01012 , H01L2924/01014 , H01L2924/01019 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , Y10T29/49117 , H01L2924/0132 , H01L2924/01201 , H01L2924/01026 , H01L2924/01025 , H01L2924/01024 , H01L2924/01022 , H01L2924/013 , H01L2924/00 , H01L2224/48 , H01L2924/0002
摘要： A copper plated aluminum wire improved in the adhesion is fabricated by a method which comprises a zinc displacement step of forming a zinc thin layer by zinc displacement on the surface of an aluminum or aluminum alloy conductor, an electroplating step of coating the surface of the zinc thin layer continuously with copper layers by electroplating to have a copper coated aluminum conductor, and a thermal diffusion step of heat treating the copper coated aluminum conductor at a temperature of 120 °C to 600 °C under an inert gas atmosphere for thermal diffusion to ease the electrodeposition stress. Accordingly, the resultant copper plated aluminum wire can easily be shaped by cold plastic working process, decreased in the diameter at higher efficiency, and improved in the power of adhesion. A plated aluminum wire is provided comprising an anchor metal layer by displacement plating, a low thermally conductive metal layer by electroplating, and a high electrically conductive metal layer by electroplating which all are deposited in a sequence on the outer surface an aluminum or aluminum alloy conductor. Accordingly, the resultant plated aluminum wire or insulating plated aluminum wire can be minimized in the overall weight and prevented from disconnection caused by thermal diffusion. A plated aluminum wire is provided comprising an anchor metal layer by displacement plating and a high electrically conductive metal layer by electroplating which both are deposited in a sequence on the outer surface an aluminum or aluminum alloy conductor. Accordingly, the resultant plated aluminum wire or insulating plated aluminum wire can be minimized in the overall weight. A composite light-weighted plated wire is provided having an electrically conductive metal layer, which has a potential equal to or higher than that of zinc, deposited by electroplating on the outer surface of a zinc anchor metal layer provided on an aluminum conductor, said electroplating carried out under a condition that the concentration of hydrogen ion in an electrolyte solution is higher than 4 (pH) as an electrolysis parameter and the thickness of plating x (micrometer) is 0.2 Accordingly, the resultant composite light-weighted plated wire can be improved in the adhesion between the aluminum conductor and the electrically conductive metal layer, easily shaped by plastic forming process, decreased in the diameter at higher efficiency, and improved in the reliability of soldering work.
摘要翻译：镀铜铝线材在粘合改进通过包括铝或铝合金导体的表面上形成由锌置换锌薄层的锌置换步骤，以电镀锌的表面上涂覆的步骤的方法制造薄层连续铜层通过电镀以具有铜涂覆的铝导体，以及热处理的铜涂覆的铝导体在120℃至600℃的温度下在惰性气体气氛中对热扩散来缓解下热扩散步骤电沉积压力。因此，所得到的铜镀铝导线可以很容易地通过冷塑性加工工艺来成形，减少在较高效率的直径，并且在粘合性的功率提高。本发明提供一种镀敷铝电线，包括通过置换镀敷锚定金属层，通过电镀低导热金属层，和高导电性金属层，通过电镀，所有被沉积在一个序列中的铝或铝合金导体的外表面上，因此，所得到的镀铝导线或绝缘的镀铝导线可以在整体重量被最小化，并从断开由热扩散引起的防止。本发明提供一种镀敷铝电线，包括通过置换镀覆的锚定金属层和通过电镀高导电性金属层，其两者都沉积在序列铝或铝合金导体的外表面上。因此，所得到的镀铝导线或绝缘的镀铝导线可以在整体重量被最小化。本发明提供一种复合材料重量轻的镀线具有导电金属层，其具有的电势等于或高于锌的高，通过电镀在铝导体设置在锌锚金属层的外表面上沉积，所述电镀的条件下进行确实氢离子的电解质的溶液中的浓度是小于4（pH值）更高，因为电解参数和电镀X（微米）的厚度为0.2

8. 发明申请

WO2016048888A1 METHODS AND APPARATUSES FOR SHAPING AND LOOPING BONDING WIRES THAT SERVE AS STRETCHABLE AND BENDABLE INTERCONNECTS 审中-公开
标题翻译：形成可弯曲和可弯曲互连的成形和缠绕连接线的方法和装置
公开(公告)号：WO2016048888A1
公开(公告)日：2016-03-31
申请号：PCT/US2015/051210
申请日：2015-09-21
申请人： MC10, INC. , GARLOCK, David G. , LI, Xia , GUPTA, Sanja , DALAL, Mitul
发明人： GARLOCK, David G. , LI, Xia , GUPTA, Sanja , DALAL, Mitul
IPC分类号： H01L23/49
CPC分类号： H01L24/48 , G06K19/07779 , H01L24/45 , H01L24/78 , H01L24/85 , H01L2224/45118 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45155 , H01L2224/4516 , H01L2224/45164 , H01L2224/45166 , H01L2224/45169 , H01L2224/45171 , H01L2224/4809 , H01L2224/48092 , H01L2224/48137 , H01L2224/48463 , H01L2224/48511 , H01L2224/78252 , H01L2224/78301 , H01L2224/78349 , H01L2224/78611 , H01L2224/85207 , H01L2224/85947 , H01L2924/00014 , H01L2224/45015 , H01L2924/207 , H01L2224/05599 , H01L2224/85399
摘要： A capillary tool for use in feeding, bending, and attaching a bonding wire between a pair of bond pads includes a body and a heating element. The body has an internal tube that extends from a first surface of the capillary tool to a second surface of the capillary tool. In some implementations, the internal tube has a portion with a generally helical shape that includes at least a portion of one complete revolution about a central axis of the body. The heating element is coupled to the body to provide a heat affected zone along a portion of the internal tube that heats the bonding wire as the bonding wire is fed through the internal tube.
摘要翻译：用于在一对接合焊盘之间馈送，弯曲和连接接合线的毛细管工具包括主体和加热元件。主体具有从毛细管工具的第一表面延伸到毛细管工具的第二表面的内管。在一些实施方案中，内管具有大致螺旋形状的部分，其包括围绕主体的中心轴线的一整圈的至少一部分。加热元件联接到主体，以沿着内管的一部分提供热影响区域，该热影响区域在接合线被馈送通过内管时加热接合线。

9. 发明申请

WO2012002764A2 METAL-SEMICONDUCTOR CONVERGENCE ELECTRIC CIRCUIT DEVICES AND ELECTRIC CIRCUIT SYSTEMS USING THE SAME 审中-公开
标题翻译：金属半导体集成电路设备和使用该电路的电路系统
公开(公告)号：WO2012002764A2
公开(公告)日：2012-01-05
申请号：PCT/KR2011004838
申请日：2011-07-01
申请人： KOREA ELECTRONICS TELECOMM , KIM HYUN-TAK , KIM BONG JUN
发明人： KIM HYUN-TAK , KIM BONG JUN
IPC分类号： H01L23/36
CPC分类号： H01L23/62 , H01L25/167 , H01L2224/45109 , H01L2224/45111 , H01L2224/45116 , H01L2224/45118 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45149 , H01L2224/45155 , H01L2224/45157 , H01L2224/4516 , H01L2224/45166 , H01L2224/45169 , H01L2224/45171 , H01L2224/45172 , H01L2224/4518 , H01L2224/45184 , H01L2224/45565 , H01L2224/45611 , H01L2924/00014 , H01L2924/01013 , H01L2924/01028 , H01L2924/01047 , H01L2924/12036 , H01L2924/1305 , H01L2924/1306 , H01L2924/00 , H01L2224/48
摘要： Provided are metal-semiconductor convergence electric circuit devices. The device includes a semiconductor device, a metal resistor exhibiting resistance increased with an increase in temperature thereof, and an interconnection line connecting the semiconductor device with the metal resistor in series and having a resistance lower than that of the metal resistor. The semiconductor device is configured to exhibit resistance decreased with an increase in temperature thereof and compensate the resistance increase of the metal resistor.
摘要翻译：提供了金属 - 半导体会聚电路装置。该器件包括半导体器件，呈现电阻随温度升高而呈现电阻的金属电阻器，以及将半导体器件与金属电阻器串联连接并具有低于金属电阻器的电阻的互连线。半导体器件被配置为表现出随着其温度升高而降低的电阻并且补偿金属电阻器的电阻增加。

10. 发明申请

WO2016203659A1 半導体装置用ボンディングワイヤ审中-公开
标题翻译：用于半导体器件的接合线
公开(公告)号：WO2016203659A1
公开(公告)日：2016-12-22
申请号：PCT/JP2015/070861
申请日：2015-07-22
申请人：日鉄住金マイクロメタル株式会社 , 新日鉄住金マテリアルズ株式会社
发明人：山田　隆 , 小田　大造 , 榛原　照男 , 大石　良 , 齋藤　和之 , 宇野　智裕
IPC分类号： H01L21/60
CPC分类号： B23K35/0227 , B23K35/3013 , B23K35/302 , B23K2201/40 , C22C5/04 , C22C9/00 , C22C9/04 , C22C9/06 , H01L24/05 , H01L24/43 , H01L24/45 , H01L24/48 , H01L2224/05624 , H01L2224/43 , H01L2224/4312 , H01L2224/43125 , H01L2224/4321 , H01L2224/4382 , H01L2224/43848 , H01L2224/43986 , H01L2224/45 , H01L2224/45005 , H01L2224/45015 , H01L2224/45105 , H01L2224/45109 , H01L2224/45111 , H01L2224/45113 , H01L2224/45118 , H01L2224/4512 , H01L2224/45147 , H01L2224/45155 , H01L2224/45169 , H01L2224/45173 , H01L2224/45178 , H01L2224/45541 , H01L2224/45565 , H01L2224/45572 , H01L2224/45644 , H01L2224/45664 , H01L2224/48227 , H01L2224/48247 , H01L2224/4845 , H01L2224/48463 , H01L2224/48824 , H01L2224/78 , H01L2224/78251 , H01L2224/85 , H01L2224/85065 , H01L2224/85075 , H01L2224/85203 , H01L2224/85444 , H01L2224/85464 , H01L2924/01005 , H01L2924/01012 , H01L2924/01015 , H01L2924/0102 , H01L2924/01032 , H01L2924/01033 , H01L2924/01034 , H01L2924/01052 , H01L2924/01057 , H01L2924/0665 , H01L2924/0705 , H01L2924/10253 , H01L2924/186 , H01L2924/01028 , H01L2924/0103 , H01L2924/01045 , H01L2924/01049 , H01L2924/01077 , H01L2924/01078 , H01L2924/01031 , H01L2924/0105 , H01L2924/01051 , H01L2924/01083 , H01L2924/01079 , H01L2924/01046 , H01L2924/01029 , H01L2924/01202 , H01L2924/01203 , H01L2924/01204 , H01L2924/00015 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/20752 , H01L2924/00014 , H01L2924/01014 , H01L2924/013 , H01L2924/00013 , H01L2924/20105 , H01L2924/01001 , H01L2924/01007 , H01L2924/00012 , H01L2924/00 , H01L2924/01027 , H01L2924/01047 , H01L2924/01013
摘要：Ｃｕ合金芯材とその表面に形成されたＰｄ被覆層とを有する半導体装置用ボンディングワイヤにおいて、１７５℃～２００℃のＨＴＳでのボール接合部の接合信頼性向上と、耐力比（＝最大耐力／０．２％耐力）：１．１～１．６の両立を図る。　ワイヤ中にＮｉ、Ｚｎ、Ｒｈ、Ｉｎ、Ｉｒ、Ｐｔの１種以上を総計で０．０３～２質量％含有することによってＨＴＳでのボール接合部の接合信頼性を向上し、さらにボンディングワイヤのワイヤ軸に垂直方向の芯材断面に対して結晶方位を測定した結果において、ワイヤ長手方向の結晶方位のうち、ワイヤ長手方向に対して角度差が１５度以下である結晶方位＜１００＞の方位比率を５０％以上とし、ボンディングワイヤのワイヤ軸に垂直方向の芯材断面における平均結晶粒径を０．９～１．３μｍとすることにより、耐力比を１．６以下とする。
摘要翻译：本发明解决了如下问题：在HTS值为175〜100的情况下，将屈服应力比（= 0.2％屈服应力除以0.2％屈服应力）分别为1.1〜1.6，在半导体器件用接合线中为200℃，所述接合线具有Cu合金芯和形成在Cu合金芯的表面上的Pd涂层。通过在线中以0.03-2质量％的总比例包含Ni，Zn，Rh，In，Ir和Pt中的一种或多种，可以提高HTS下的球接合部的接合可靠性。在与芯线的垂直于接合线的线轴方向的截面相关的晶体取向的测量中发现的线的长度方向的晶体取向中，晶体取向的取向比例<100 >相对于导线的长度方向的角度差不超过15度，至少为50％。通过在芯线的垂直于接合线的线轴的方向的横截面中获得0.9-1.3μm的平均晶粒尺寸，将证明应力比保持在或低于1.6。

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