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    • 4. 发明申请
    • COLOR CENTER-CONTAINING MAGNESIUM OXIDE AND THIN FILM OF SAME, WAVELENGTH-VARIABLE LASER MEDIUM, LASER DEVICE, AND LIGHT SOURCE DEVICE
    • 含颜料中心氧化镁和薄膜,波长可变激光介质,激光器件和光源设备
    • WO2010024447A2
    • 2010-03-04
    • PCT/JP2009065252
    • 2009-09-01
    • NEW IND RES ORGANIZATIONUCHINO TAKASHIOKUTSU DAISUKE
    • UCHINO TAKASHIOKUTSU DAISUKE
    • H01S3/16C01F5/04C09K11/55H01J29/20H01J31/12
    • H01J31/12C01F5/04C09K11/636C30B1/10C30B29/16H01S3/163H01S3/1681H01S3/1685H01S3/30
    • Provided is a color center laser medium that is a wide-spectrum laser medium with a laser oscillation wavelength band that ranges from a near-ultraviolet region, with a shorter wavelength than that of a conventional laser medium utilizing color centers, to the visible region, and that is capable of operating at room temperature without requiring a laser cavity and liquid nitrogen cooling. The color center-containing magnesium oxide is created by means of a solid-phase reaction between silicon monoxide (SiO), boron trioxide (B2O3), or ferric oxide (Fe2O3) and metallic magnesium. The wavelength-variable laser medium then utilizes color centers (color center) in the magnesium oxide created by the solid-phase reaction. More specifically, silicon monoxide and metallic magnesium are heated for several hours in an argon atmosphere at a prescribed temperature in order to obtain a magnesium oxide sublimate. Laser oscillation occurs by the sublimate being directly irradiated with an excitation pulsed laser beam using a pump energy higher than a prescribed energy that is the laser oscillation threshold value.
    • 提供了一种彩色中心激光介质,其是具有激光振荡波长带的宽频激光介质,其波长比使用彩色中心的传统激光介质的波长短的近紫外区域到可见光区域, 并且能够在室温下操作而不需要激光腔和液氮冷却。 含有着色中心的氧化镁通过一氧化硅(SiO),三氧化硼(B2O3)或氧化铁(Fe2O3)和金属镁之间的固相反应产生。 然后,波长可变激光介质利用由固相反应产生的氧化镁中的色心(色心)。 更具体地说,一氧化硅和金属镁在规定温度下在氩气气氛中加热数小时,以获得氧化镁升华。 使用高于作为激光振荡阈值的规定能量的泵浦能量,通过激发脉冲激光束直接照射的升华发生激光振荡。
    • 5. 发明授权
    • Dual layer color-center patterned light source
    • US07260127B2
    • 2007-08-21
    • US10934251
    • 2004-09-03
    • Anthony D. KurtzJoseph R. Van DeWeert
    • Anthony D. KurtzJoseph R. Van DeWeert
    • H01S3/16H01S3/14H01S3/06
    • C30B29/12C30B23/00C30B33/04H01S3/0612H01S3/0809H01S3/163H01S3/1681H01S3/2375H01S3/2383
    • A thin layer of ionic crystal is grown on a substrate. The crystal could be any type of ionic crystal, such as sodium chloride or potassium chloride. The crystal is a pure form of the chosen compound and may contain contaminants which would shift the wavelength of created color centers. On top of the first crystal layer, a second thin layer of a different type of crystal is deposited, such as lithium fluoride or sodium fluoride. When these two layers are radiated with gamma rays, they will each form color centers at the spots radiated. Because of the difference in crystalline properties of the two different ionic crystal centers, their color centers would be at different wavelengths. Each of the two separate ionic crystals will emit light at different characteristic wavelengths when illuminated at their unique absorption frequencies. Each layer can be made to lase separately. The top layer has an absorption energy greater than that of the bottom layer, so that the layer energy of the bottom layer absorption peak will pass through the top layer and be absorbed only by the bottom layer. There are many ways of forming F-centers in the two superimposed layers, such as by the use of selective gamma radiation by heating of an anion layer of the particular compound and then depositing the second ionic crystal on the first ionic crystal and then depositing an anion layer on the second crystal and then heating to produce a structure which will lase it to the different frequencies.
    • 6. 发明申请
    • Solid-state devices with radial dopant valence profile
    • 具有径向掺杂剂价态的固态器件
    • US20040028101A1
    • 2004-02-12
    • US10119462
    • 2002-08-06
    • Robert W. ByrenDavid S. Sudima
    • H01S003/14
    • H01S3/113H01S3/061H01S3/0617H01S3/094084H01S3/0941H01S3/1623H01S3/1643H01S3/1681
    • A solid state, laser light control device (20, 30) and material (10), and methods of producing same. The device (20, 30) and material (10) consist essentially of a host material (14) which contains: a dopant species (16) at a first valence state (a), the concentration of which increases with distance from the surface (18); and the same dopant species (16) at a second valence state (b), the concentration which decreases with distance from the surface (18). The method comprises the steps of: obtaining a doped solid state material (14); exposing the solid state material (14) to elevated temperature, for a period of time, in an oxidizing or reducing atmosphere. The elevated temperature and time of exposure are selected to change the valence state (a) of the dopant (16) in direct proportion to distance from the surface (18) of the solid state material (16). What is thereby produced is a solid state device (20, 30) in which the concentration of the dopant 16 at the second valence state (b) decreases with radius, the concentration of the dopant (16) at the first valence state (a) increases with radius, and the sum of these concentrations remains constant.
    • 固态激光控制装置(20,30)和材料(10)及其制造方法。 装置(20,30)和材料(10)基本上由主体材料(14)组成,其包含:处于第一价态(a)的掺杂剂物质(16),其浓度随距离表面的距离而增加 18); 和与第二价态(b)相同的掺杂剂物质(16),其浓度随距表面18的距离而减小。 该方法包括以下步骤:获得掺杂固体材料(14); 在氧化或还原气氛中将固态材料(14)暴露于升高的温度一段时间。 选择升高的温度和曝光时间以与固态材料(16)的表面(18)的距离成正比的方式改变掺杂剂(16)的化合价态(a)。 由此产生的是固态装置(20,30),其中第二价态(b)的掺杂剂16的浓度随着半径而减小,掺杂剂(16)处于第一价态(a)的浓度, 半径增加,这些浓度的总和保持不变。
    • 7. 发明申请
    • Dual layer color-center patterned light source
    • 双层彩色中心图案光源
    • US20030193978A1
    • 2003-10-16
    • US10120698
    • 2002-04-11
    • Anthony D. KurtzJoseph R. Van DeWeert
    • H01S003/14
    • C30B29/12C30B23/00C30B33/04H01S3/0612H01S3/0809H01S3/163H01S3/1681H01S3/2375H01S3/2383
    • A thin layer of ionic crystal is grown on a substrate. The crystal could be any type of ionic crystal, such as sodium chloride or potassium chloride. The crystal is a pure form of the chosen compound and may contain contaminants which would shift the wavelength of created color centers. On top of the first crystal layer, a second thin layer of a different type of crystal is deposited, such as lithium fluoride or sodium fluoride. When these two layers are radiated with gamma rays, they will each form color centers at the spots radiated. Because of the difference in crystalline properties of the two different ionic crystal centers, their color centers would be at different wavelengths. Each of the two separate ionic crystals will emit light at different characteristic wavelengths when illuminated at their unique absorption frequencies. Each layer can be made to lase separately. The top layer has an absorption energy greater than that of the bottom layer, so that the layer energy of the bottom layer absorption peak will pass through the top layer and be absorbed only by the bottom layer. There are many ways of forming F-centers in the two superimposed layers, such as by the use of selective gamma radiation by heating of an anion layer of the particular compound and then depositing the second ionic crystal on the first ionic crystal and then depositing an anion layer on the second crystal and then heating to produce a structure which will lase it to the different frequencies.
    • 在衬底上生长薄层的离子晶体。 该晶体可以是任何类型的离子晶体,例如氯化钠或氯化钾。 晶体是所选化合物的纯形式,并且可能含有污染物,这些污染物将使所产生的色心的波长发生偏移。 在第一晶体层的顶部,沉积不同类型晶体的第二薄层,例如氟化锂或氟化钠。 当这两层用伽马射线照射时,它们将在辐射的点处形成彩色中心。 由于两个不同的离子晶体中心的晶体性质的差异,它们的色心将处于不同的波长。 当以其独特的吸收频率照射时,两个分离的离子晶体中的每一个将发射不同特征波长的光。 每个层可以分开制作。 顶层的吸收能量大于底层的吸收能,使得底层吸收峰的层能量将通过顶层并且仅被底层吸收。 在两个叠加层中形成F中心的方法有很多种,例如通过加热特定化合物的阴离子层,然后将第二离子晶体沉积在第一离子晶体上,然后沉积 阴离子层在第二个晶体上,然后加热,以产生一个结构,将其延伸到不同的频率。