会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 3. 发明申请
    • Coating composition and a process for its preparation
    • 涂料组合物及其制备方法
    • US20040110012A1
    • 2004-06-10
    • US10673903
    • 2003-09-29
    • Peter BierPeter Capellen
    • B05D003/08B05D003/02
    • B05D7/544B05D7/586C08G77/58C09D183/04C09D183/06C09D183/14Y10T428/31547
    • A process or preparing a coating composition which involves forming a hydrolysis product is described. The hydrolysis product is formed by hydrolysing, at lest one compound represented by general formula I, M(Rnull)mnullnull(I) wherein M is an element selected from the group consisting of Si, Ti, Zr, Sn, Ce, Al, B, VO, In and Zn, Rnull represents a hydrolysable radical, and m is an integer from 2 to 4. The hydrolysis step may optionally be performed in the presence of at least one compound represented by general formula II, RbSiRnulla,nullnull(II) wherein the radicals Rnull and R are the same or different, Rnull is as defined above with formula I, R represents a group selected from an alkyl group, an alkenyl group, an aryl group, a hydrocarbon group with at least one halogen group, an epoxide group, a glycidyloxy group, an amino group, a mercapto group, a methacryloxy group and a cyano group, and a and b independently of one another have a value from 1 to 3, provided that the sum of a and b is four. The hydrolysis reaction is conducted in the presence of at least 0.6 moles of water for every mole of hydrolysable radical Rnull. Further described is a multilayered article which includes a substrate, a scratch-resistant coating and a top layer which is prepared from the coating composition of the invention. Also described is a process of preparing the multilayered article.
    • 描述了涉及形成水解产物的方法或制备涂料组合物。 水解产物通过水解至少一种由通式I表示的化合物M(R')m(I),其中M是选自Si,Ti,Zr,Sn,Ce,Al, B,VO,In和Zn,R'表示可水解基团,m为2〜4的整数。水解步骤可以任选在至少一种由通式II表示的化合物,RbSiR'a, (II)其中基团R'和R相同或不同,R'如上述式I所定义,R表示选自烷基,烯基,芳基,至少具有烃基的烃基 一个卤素基,环氧基,缩水甘油氧基,氨基,巯基,甲基丙烯酰氧基和氰基,a和b彼此独立地具有1至3的值,条件是a 和b是四。 对于每摩尔可水解基团R',水解反应在至少0.6摩尔水的存在下进行。 进一步描述了一种多层制品,其包括由本发明的涂料组合物制备的基材,耐刮擦涂层和顶层。 还描述了制备多层制品的方法。
    • 8. 发明申请
    • METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    • 制造半导体器件的方法
    • US20010038886A1
    • 2001-11-08
    • US08637436
    • 1996-04-25
    • MITSURU TAGUCHI
    • B05D003/02B05D003/08B05D003/10
    • H01L21/76862H01L21/76843H01L21/76856H01L21/76882Y10S438/906
    • A hard Al oxide film having a high melting point, which grows on the surface of an AlnullCu film during a wafer is carried in atmospheric air, obstructs the burying of a viahole with the AlnullCu film by high pressure reflow, with a result that a void remains in the hole. The present invention is intended to remove such an Al oxide film grown on the AlnullCu film formed by sputtering, by Arnull sputtering/etching directly before high pressure reflow. Moreover, when a Ti oxide film is present on the surface of a Ti based underlying film formed by CVD, an Al oxide film is possibly grown at the boundary between the Ti based underlying film and an AlnullCu film laminated thereon. In this case, the Ti oxide film is similarly removed directly before formation of the AlnullCu film, thereby preventing the growth of the Al oxide film. With this method, it is possible to highly keep thermal flow of a conductive film in a high pressure reflow process, and hence to desirably bury a connection hole with the conductive film.
    • 在大气中携带在晶片中在Al-Cu膜的表面生长的具有高熔点的硬质Al氧化物膜,阻碍了通过高压回流与Al-Cu膜的通孔的埋入, 导致孔中留下空隙。 本发明旨在通过在高压回流之前直接进行Ar +溅射/蚀刻来除去在溅射形成的Al-Cu膜上生长的这种Al氧化物膜。 此外,当通过CVD形成的Ti基底层膜的表面上存在Ti氧化物膜时,可能在Ti基底膜和层叠在其上的Al-Cu膜之间的边界处生长Al氧化物膜。 在这种情况下,在形成Al-Cu膜之前,类似地直接除去Ti氧化物膜,从而防止Al氧化物膜的生长。 通过这种方法,可以在高压回流工艺中高度保持导电膜的热流动,因此期望地埋入与导电膜的连接孔。