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    • 1. 发明授权
    • Method of improving adhesion of diffusion layers on fluorinated silicon dioxide
    • 改善氟化二氧化硅上扩散层粘附性的方法
    • US06372301B1
    • 2002-04-16
    • US09218703
    • 1998-12-22
    • Murali NarasimhanVikram PavateKenny King-Tai NganXiangbing Li
    • Murali NarasimhanVikram PavateKenny King-Tai NganXiangbing Li
    • C23C1402
    • H01L21/76826H01L21/3105H01L21/31629H01L21/76841
    • The present invention generally provides a method for stabilizing a halogen-doped silicon oxide film, particularly a fluorinated silicon oxide film. The invention also provides a method for preventing loosely bonded halogen atoms from reacting with components of the barrier layer during subsequent processing of the substrate. The invention provides a hydrogen plasma treatment of the halogen-doped silicon oxide film without subjecting the substrate to a heated environment that may damage the substrate and the structures formed on the substrate. The invention also improves the adhesion strength between the halogen-doped silicon oxide film and the barrier layer. Furthermore, the hydrogen plasma treatment can be practiced in a variety of plasma processing chambers of an integrated process sequence, including pre-clean chambers, physical vapor deposition chambers, chemical vapor deposition chambers, etch chambers and other plasma processing chambers.
    • 本发明通常提供一种稳定卤素掺杂氧化硅膜,特别是氟化氧化硅膜的方法。 本发明还提供一种防止松散键合的卤素原子在随后的衬底加工过程中与阻挡层的组分发生反应的方法。 本发明提供了卤素掺杂氧化硅膜的氢等离子体处理,而不会使基板受到可能损坏基板和形成在基板上的结构的加热环境。 本发明还改善了卤素掺杂氧化硅膜和阻挡层之间的粘合强度。 此外,氢等离子体处理可以在包括预清洁室,物理气相沉积室,化学气相沉积室,蚀刻室和其它等离子体处理室的综合处理顺序的各种等离子体处理室中实施。
    • 3. 发明授权
    • Plasma treatment to enhance adhesion and to minimize oxidation of carbon-containing layers
    • 等离子体处理以增强附着力并使含碳层的氧化最小化
    • US06821571B2
    • 2004-11-23
    • US09336525
    • 1999-06-18
    • Judy Huang
    • Judy Huang
    • C23C1402
    • H01L21/02126C23C16/325C23C16/56H01L21/02211H01L21/02274H01L21/02323H01L21/0234H01L21/3105H01L21/314H01L21/3146H01L21/31633
    • The present invention generally provides improved adhesion and oxidation resistance of carbon-containing layers without the need for an additional deposited layer. In one aspect, the invention treats an exposed surface of carbon-containing material, such as silicon carbide, with an inert gas plasma, such as a helium (He), argon (Ar), or other inert gas plasma, or an oxygen-containing plasma such as a nitrous oxide (N2O) plasma. Other carbon-containing materials can include organic polymeric materials, amorphous carbon, amorphous fluorocarbon, carbon containing oxides, and other carbon-containing materials. The plasma treatment is preferably performed in situ following the deposition of the layer to be treated. Preferably, the processing chamber in which in situ deposition and plasma treatment occurs is configured to deliver the same or similar precursors for the carbon-containing layer(s). However, the layer(s) can be deposited with different precursors. The invention also provides processing regimes that generate the treatment plasma and systems which use the treatment plasma. The carbon-containing material can be used in a variety of layers, such as barrier layers, etch stops, ARCs, passivation layers, and dielectric layers.
    • 本发明通常提供了改进的含碳层的粘附性和抗氧化性,而不需要额外的沉积层。 一方面,本发明使用诸如氦(He),氩(Ar)或其它惰性气体等离子体或惰性气体等离子体的惰性气体等离子体处理含碳材料如碳化硅的暴露表面, 含有等离子体,如一氧化二氮(N2O)等离子体。 其它含碳材料可以包括有机聚合材料,无定形碳,无定形碳氟化合物,含碳氧化物和其它含碳材料。 等离子体处理优选在沉积待处理层之后原位进行。 优选地,其中发生原位沉积和等离子体处理的处理室被配置为递送含碳层的相同或相似的前体。 然而,该层可以用不同的前体沉积。 本发明还提供了产生处理等离子体的处理方案和使用处理等离子体的系统。 含碳材料可以用于各种层,例如阻挡层,蚀刻停止层,ARC,钝化层和电介质层。