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1. 发明申请

US20040023134A1 Multi-layer, attenuated phase-shifting mask 有权
标题翻译：多层衰减相移掩模
公开(公告)号：US20040023134A1
公开(公告)日：2004-02-05
申请号：US10629641
申请日：2003-07-29
发明人： J. Brett Rolfson
IPC分类号： G03F001/00 , G03F001/08
CPC分类号： G03F1/32 , G03F1/29
摘要： The present invention provides an attenuated phase shift mask (nullAPSMnull) that, in each embodiment, includes completely transmissive regions sized and shaped to define desired semiconductor device features, slightly attenuated regions at the edges of the completely transmissive regions corresponding to isolated device features, highly attenuated regions at the edges of completely transmissive regions corresponding to closely-spaced or nested device features, and completely opaque areas where it is desirable to block transmission of all radiation through the APSM. The present invention further provides methods for fabricating the APSMs according to the present invention.
摘要翻译：本发明提供了衰减相移掩模（“APSM”），其在每个实施例中包括尺寸和形状以确定期望的半导体器件特征的完全透射区域，在完全透射区域的边缘处对应于隔离的器件特征的略微衰减的区域在完全透射区域的边缘处的高度衰减的区域对应于紧密间隔或嵌套的器件特征，以及完全不透明的区域，其中期望阻止通过APSM的所有辐射的透射。本发明还提供了制造根据本发明的APSM的方法。

2. 发明申请

US20030232257A1 Near-field light exposure mask with avoidance of overlap of near-field light, method for manufacturing the same, exposure apparatus and method using near-field light exposure mask, and method for manufacturing device 失效
标题翻译：近场光曝光掩模，避免近场光的重叠，其制造方法，曝光装置和使用近场曝光掩模的方法，以及制造装置的方法
公开(公告)号：US20030232257A1
公开(公告)日：2003-12-18
申请号：US10449505
申请日：2003-06-02
申请人： Canon Kabushiki Kaisha
发明人： Yasuhisa Inao , Ryo Kuroda
IPC分类号： G03F001/08 , G03F007/20 , G03F007/26 , G03B027/00 , G03B027/62
CPC分类号： G03F7/7035 , B82Y10/00 , G03F1/50 , G03F7/70325
摘要： A near-field light exposure mask provided with a plurality of apertures each having a width small than the wavelength of light used for exposure. In the mask described above, among the plurality of apertures, apertures adjacent to each other are disposed at a necessary distance so that near-field light effused from one of the apertures adjacent to each other does not overlap that generated from the other aperture.
摘要翻译：一种近场曝光掩模，其具有多个孔，每个孔的宽度小于用于曝光的光的波长。在上述掩模中，在多个孔之间，彼此相邻的孔设置在必要的距离处，使得从彼此相邻的一个孔中流出的近场光不与另一个孔产生的重叠。

3. 发明申请

US20030228530A1 Extreme ultraviolet mask with improved absorber 失效
公开(公告)号：US20030228530A1
公开(公告)日：2003-12-11
申请号：US10461220
申请日：2003-06-13
发明人： Pei-Yang Yan , Guojing Zhang
IPC分类号： G03F001/08 , G21K005/00 , G03F007/20 , G03F007/16 , G03F007/40 , G02B005/08 , G02B005/20 , G02B007/182 , B05D005/06
CPC分类号： G03F1/22 , B82Y10/00 , B82Y40/00 , G03F1/24 , G03F1/54
摘要： The present invention discloses an EUV mask having an improved absorber layer with a certain thickness that is formed from a metal and a nonmetal in which the ratio of the metal to the nonmetal changes through the thickness of the improved absorber layer and a method of forming such an EUV mask.

4. 发明申请

US20030219654A1 Halftone type phase shift mask blank and halftone type phase shift mask 有权
公开(公告)号：US20030219654A1
公开(公告)日：2003-11-27
申请号：US10375063
申请日：2003-02-28
申请人： HOYA CORPORATION
发明人： Masao Ushida , Minoru Sakamoto , Naoki Nishida
IPC分类号： G03F001/08 , B32B005/00 , B32B009/04
CPC分类号： G03F1/32 , G03F1/84
摘要： A halftone type phase shift mask having a semitranslucent film pattern and a shielding film pattern provided on a transparent substrate in this order is constituted in such a manner that each of the reflectances of the transparent substrate, the semitranslucent film pattern and the shielding film pattern for an inspecting light represents a difference which can detect the semitranslucent film pattern and the shielding film pattern based on a reflected light generated when the inspecting light is irradiated on the mask.

5. 发明申请

US20030203292A1 Quartz damage repair method for high-end mask 有权
标题翻译：石英损伤修复方法为高档面膜
公开(公告)号：US20030203292A1
公开(公告)日：2003-10-30
申请号：US10425322
申请日：2003-04-29
申请人： Taiwan Semiconductor Manufacturing Co.
发明人： Same-Ting Chen , Tzy-Ying Lin
IPC分类号： G03F001/08
CPC分类号： G03F1/72
摘要： In accordance with the objectives of the invention a new method is provided for repairing photolithographic exposure masks. The invention uses an etch function of a conventional mask repair tool. The invention addresses defects that occur in a pattern of opaque material (such as chrome) created over the surface of an exposure mask whereby an (undesired) opening exists in the opaque material. The invention uses a focused ion-beam exposure of the surface of the exposure mask to purposely nulldamagenull this surface over the area where the opaque material is required to be present. Repair accuracy is in this manner easy to control, the conventional problem of peeling of the opaque or light sensitive material is eliminated.
摘要翻译：根据本发明的目的，提供了一种用于修复光刻曝光掩模的新方法。本发明使用常规掩模修复工具的蚀刻功能。本发明解决了在曝光掩模的表面上产生的不透明材料（例如铬）的图案中发生的缺陷，由此在不透明材料中存在（不期望的）开口。本发明使用曝光掩模表面的聚焦离子束曝光在需要不透明材料的区域上有意地“损坏”该表面。以这种方式易于控制的修复精度，消除了不透明或光敏材料的剥离的常规问题。

6. 发明申请

US20030203290A1 Photomask, method for producing the same, and method for forming pattern using the photomask 失效
标题翻译：光掩模，其制造方法以及使用光掩模形成图案的方法
公开(公告)号：US20030203290A1
公开(公告)日：2003-10-30
申请号：US10424722
申请日：2003-04-29
申请人： Matsushita Electric Industrial Co., Ltd.
发明人： Akio Misaka
IPC分类号： G03F001/08 , G03F007/20
CPC分类号： G03F1/29 , G03F1/32
摘要： A photomask includes a semi-light-shielding portion having a light-shielding property, a light-transmitting portion surrounded by the semi-light-shielding portion and a peripheral portion positioned in a periphery of the light-transmitting portion on a transparent substrate. The semi-light-shielding portion and the light-transmitting portion transmit the exposure light in the same phase each other, whereas the peripheral portion transmits the exposure light in a phase opposite to that of the light-transmitting portion. A phase shift film that transmits the exposure light in a phase opposite to that of the peripheral portion is formed on the transparent substrate in the semi-light-shielding portion formation region.
摘要翻译：光掩模包括具有遮光性的半遮光部分，由半遮光部分包围的透光部分和位于透光部分的周边的周边部分。半光屏蔽部分和透光部分以相同的相位彼此透射曝光光，而周边部分以与透光部分相反的相位透射曝光光。在半遮光部形成区域中的透明基板上形成有以与周边部相反的方向透过曝光的相移膜。

7. 发明申请

US20030186137A1 Disposable hard mask for phase shift photomask plasma etching 有权
标题翻译：一次性硬掩模用于相移光掩模等离子体蚀刻
公开(公告)号：US20030186137A1
公开(公告)日：2003-10-02
申请号：US10370408
申请日：2003-02-19
申请人： Photronics, Inc.
发明人： David Y. Chan
IPC分类号： G03F001/08 , G03F007/20 , G03F007/40
CPC分类号： G03F1/80 , G03F1/30 , G03F7/094
摘要： A method for creating a phase shift photomask which includes a layer of hard mask material, the inclusion of which improves the uniformity of critical dimensions on the photomask by minimizing the affect of macro and micro loading. The method for producing the phase shift photomask of the instant invention includes two etching processes. The first etching process etches the layer of hard mask, and the second etching process etches opaque material (and anti-reflective layer, if used) and phase shift layers.
摘要翻译：一种用于产生包括硬掩模材料层的相移光掩模的方法，其包括通过最小化宏观和微观负载的影响来改善光掩模上的临界尺寸的均匀性。本发明的相移光掩模的制造方法包括两个蚀刻工序。第一蚀刻工艺蚀刻硬掩模层，并且第二蚀刻工艺蚀刻不透明材料（和抗反射层，如果使用）和相移层。

8. 发明申请

US20040043303A1 Photomask having an intermediate inspection film layer 有权
标题翻译：光掩模具有中间检查膜层
公开(公告)号：US20040043303A1
公开(公告)日：2004-03-04
申请号：US10229830
申请日：2002-08-27
发明人： Matthew Lassiter , Michael Cangemi
IPC分类号： G03F001/08 , G03F007/11 , G03F007/20 , G03F007/40
CPC分类号： G03F1/32 , G03F1/38 , G03F1/54 , G03F1/84
摘要： The present invention relates generally to improved photomask blanks used in photolithography for the manufacture of integrated circuits and other semiconductor devices, and more specifically, to the detection of defects in such photomasks after processing. In particular, the present invention is directed to a photomask blank having one or more intermediate layers made from materials having a higher extinction coefficient at the inspection tool wavelength than exposure tool wavelengths. The intermediate layer(s) are made from materials that absorb a sufficient amount of light to meet the optical requirements of inspection tools while at the same time transmit a sufficient amount of light to meet the optical requirements of exposure tools. As a result, the photomask improves inspection results of a photomask without sacrificing transmission properties during the semiconductor writing process.
摘要翻译：本发明一般涉及用于制造集成电路和其它半导体器件的光刻技术中使用的改进的光掩模坯料，更具体地说，涉及在处理后检测这种光掩模中的缺陷。特别地，本发明涉及一种光掩模坯料，其具有由在检测工具波长处具有比曝光工具波长更高的消光系数的材料制成的一个或多个中间层。中间层由吸收足够量的光以满足检查工具的光学要求的材料制成，同时传输足够量的光以满足曝光工具的光学要求。结果，光掩模改善了光掩模的检查结果，而不牺牲半导体写入过程中的透射特性。

9. 发明申请

US20040033424A1 Lithographic template and method of formation and use 失效
标题翻译：光刻模板及其形成和使用方法
公开(公告)号：US20040033424A1
公开(公告)日：2004-02-19
申请号：US10222734
申请日：2002-08-15
发明人： Albert Alec Talin , Jeffrey H. Baker , William J. Dauksher , Andy Hooper , Douglas J. Resnick
IPC分类号： G03F001/08 , C23C014/34 , G02B001/12 , B29D011/00 , B29C035/08
CPC分类号： B82Y10/00 , B82Y40/00 , C23C14/086 , G03F7/0002 , G03F7/0017 , G03F7/093
摘要： This invention relates to semiconductor devices, microelectronic devices, micro electro mechanical devices, microfluidic devices, photonic devices, and more particularly to a lithographic template, a method of forming the lithographic template and a method for forming devices with the lithographic template. The lithographic template (10) is formed having a substrate (12), a transparent conductive layer (16) formed on a surface (14) of the substrate (12) by low pressure sputtering to a thickness that allows for preferably 90% transmission of ultraviolet light therethrough, and a patterning layer (20) formed on a surface (18) of the transparent conductive layer (16). The template (10) is used in the fabrication of a semiconductor device (30) for affecting a pattern in device (30) by positioning the template (10) in close proximity to semiconductor device (30) having a radiation sensitive material formed thereon and applying a pressure to cause the radiation sensitive material to flow into the relief image present on the template. Radiation is then applied through the template so as to cure portions of the radiation sensitive material and define the pattern in the radiation sensitive material. The template (10) is then removed to complete fabrication of semiconductor device (30).
摘要翻译：本发明涉及半导体器件，微电子器件，微电子机械器件，微流体器件，光子器件，更具体地涉及光刻模板，形成光刻模板的方法和用光刻模板形成器件的方法。光刻模板（10）形成为具有基板（12），通过低压溅射形成在基板（12）的表面（14）上的透明导电层（16）至允许优选90％透射率的厚度紫外光，以及形成在透明导电层（16）的表面（18）上的图形层（20）。模板（10）用于通过将模板（10）定位成紧邻其上形成有辐射敏感材料的半导体器件（30）而影响器件（30）中的图案的半导体器件（30）的制造，以及施加压力以使辐射敏感材料流入存在于模板上的浮雕图像。然后通过模板施加辐射，以便固化辐射敏感材料的部分并限定辐射敏感材料中的图案。然后移除模板（10）以完成半导体器件（30）的制造。

10. 发明申请

US20040029021A1 Method of forming a rim phase shifting mask and using the rim phase shifting mask to form a semiconductor device 有权
标题翻译：形成边缘相移掩模并使用边缘相移掩模形成半导体器件的方法
公开(公告)号：US20040029021A1
公开(公告)日：2004-02-12
申请号：US10213344
申请日：2002-08-06
发明人： Cesar M. Garza , Wei E. Wu , Bernard J. Roman , Pawitter J. S. Mangat , Kevin J. Nordquist , William J. Dauksher
IPC分类号： G03F001/00 , G03F001/08 , G03F007/20
CPC分类号： G03F1/29
摘要： A semiconductor device is formed by patterning a resist layer using a rim phase shifting mask. A multilayer or single patterning layer to form the different phase-shifting regions and opaque regions is used to manufacture the rim phase shifting mask. First phase shifting regions are formed by transferring an opening in the multilayer or single patterning layer through an opaque layer and a transparent substrate. At least portions of the same multilayer or single patterning layer are used to recess the opaque layer a predetermined distance to form rims (second phase shifting regions). The first phase-shifting regions phase shift the light traveling through them 180 degrees relative to the light traveling through the rims, thereby increasing the contrast of the light traveling through the rim phase shifting mask.
摘要翻译：使用边缘相移掩模对抗蚀剂层进行图案化来形成半导体器件。用于形成不同相移区域和不透明区域的多层或单一图案化层用于制造边缘相移掩模。通过将多层或单一图案形成层中的开口转移穿过不透明层和透明基底而形成第一相移区域。使用相同多层或单一图案化层的至少部分将不透明层凹入预定距离以形成边缘（第二相移区域）。第一相移区域相对于穿过边缘移动的光将相对于穿过它们的光相移180度，从而增加穿过边缘相移掩模的光的对比度。

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