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    • 8. 发明公开
    • VOLTAGE CONVERSION CIRCUIT
    • 电压转换电路
    • EP3276805A1
    • 2018-01-31
    • EP15889022.8
    • 2015-11-19
    • Huawei Technologies Co. Ltd.
    • WANG, JiakeCHEN, Liang
    • H02M3/155H02M1/22
    • H02M3/158H02M1/32H02M3/1588H03K17/6872Y02B70/1466
    • The present invention discloses a voltage conversion circuit, including: a first power transistor; a second power transistor, where the second power transistor is cut off when the first power transistor is conductive and is conductive when the first power transistor is cut off; a first energy storage element; a second energy storage element, configured to be coupled to the first power transistor and the second power transistor; a bleed module, configured to be coupled to the first power transistor, and when the first power transistor is cut off and a voltage of a source of the first power transistor reaches a source threshold, provide a current path for a current flowing from the source of the first power transistor to ground. By means of the foregoing manner, in the present invention, a voltage difference between a drain and the source of the first power transistor can be decreased, thereby lowering a risk of burning out the first power transistor, and avoiding an increase in manufacturing costs.
    • 本发明公开了一种电压转换电路,包括:第一功率晶体管; 第二功率晶体管,其中当所述第一功率晶体管导通时所述第二功率晶体管截止并且当所述第一功率晶体管截止时导通; 第一储能元件; 第二能量存储元件,被配置为耦合到所述第一功率晶体管和所述第二功率晶体管; 泄放模块,被配置为耦合到所述第一功率晶体管,并且当所述第一功率晶体管被切断并且所述第一功率晶体管的源极的电压达到源极阈值时,为从所述源极流出的电流提供电流路径 的第一个功率晶体管接地。 通过上述方式,在本发明中,可以减小第一功率晶体管的漏极和源极之间的电压差,从而降低了烧毁第一功率晶体管的风险,并且避免了制造成本的增加。