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1. 发明公开

EP2273540A3 Field-effect transistor and method for fabricating field-effect transistor 审中-公开
标题翻译： Feldeffekttransistor和Verfahren zur Herstellung des Feldeffekttransistoren
公开(公告)号：EP2273540A3
公开(公告)日：2013-05-29
申请号：EP10168749.9
申请日：2010-07-07
申请人： Ricoh Company, Ltd.
发明人： Abe, Yukiko , Ueda, Naoyuki , Nakamura, Yuki , Sone, Yuji
IPC分类号： H01L21/336 , H01L29/786
摘要： A method for fabricating a field-effect transistor having a gate electrode, a source electrode, a drain electrode, and an active layer forming a channel region, the active layer having an oxide semiconductor mainly containing magnesium and indium is disclosed. The method includes a deposition step of depositing an oxide film, a patterning step of patterning the oxide film by processes including etching to obtain the active layer, and a heat-treatment step of heat-treating the obtained active layer subsequent to the patterning step.
摘要翻译：公开了一种制造具有栅电极，源电极，漏电极和形成沟道区的有源层的场效应晶体管的方法，所述有源层具有主要包含镁和铟的氧化物半导体。该方法包括沉积氧化膜的沉积步骤，通过包括蚀刻的工艺对氧化物膜进行图案化以获得有源层的图案化步骤，以及在图案化步骤之后对所获得的活性层进行热处理的热处理步骤。

2. 发明授权

EP2273540B1 Method for fabricating field-effect transistor 有权
公开(公告)号：EP2273540B1
公开(公告)日：2020-04-15
申请号：EP10168749.9
申请日：2010-07-07
申请人： Ricoh Company, Ltd.
发明人： Abe, Yukiko , Ueda, Naoyuki , Nakamura, Yuki , Sone, Yuji
IPC分类号： H01L21/336 , H01L29/786

3. 发明公开

EP2273540A2 Field-effect transistor and method for fabricating field-effect transistor 审中-公开
标题翻译：场效应晶体管及其制造场效应晶体管的方法
公开(公告)号：EP2273540A2
公开(公告)日：2011-01-12
申请号：EP10168749.9
申请日：2010-07-07
申请人： Ricoh Company, Ltd.
发明人： Abe, Yukiko , Ueda, Naoyuki , Nakamura, Yuki , Sone, Yuji
IPC分类号： H01L21/336 , H01L29/786
摘要： A method for fabricating a field-effect transistor having a gate electrode, a source electrode, a drain electrode, and an active layer forming a channel region, the active layer having an oxide semiconductor mainly containing magnesium and indium is disclosed. The method includes a deposition step of depositing an oxide film, a patterning step of patterning the oxide film by processes including etching to obtain the active layer, and a heat-treatment step of heat-treating the obtained active layer subsequent to the patterning step.

4. 发明授权

EP2819175B1 Field-effect transistor, display element, image display device, and system 有权
公开(公告)号：EP2819175B1
公开(公告)日：2020-07-29
申请号：EP14173930.0
申请日：2014-06-25
申请人： Ricoh Company, Ltd.
发明人： Ueda, Naoyuki , Nakamura, Yuki , Matsumoto, Shinji , Sone, Yuji , Takada, Mikiko , Saotome, Ryoichi , Arae, Sadanori , Abe, Yukiko
IPC分类号： H01L29/786

5. 发明公开

EP2819175A1 Field-effect transistor, display element, image display device, and system 审中-公开
标题翻译： Feldeffekttransistor，Anzeigeelement，Bildanzeigevorrichtung und Systemdafür
公开(公告)号：EP2819175A1
公开(公告)日：2014-12-31
申请号：EP14173930.0
申请日：2014-06-25
申请人： Ricoh Company, Ltd.
发明人： Ueda, Naoyuki , Nakamura, Yuki , Matsumoto, Shinji , Sone, Yuji , Takada, Mikiko , Saotome, Ryoichi , Arae, Sadanori , Abe, Yukiko
IPC分类号： H01L29/786
摘要： A field-effect transistor, which contains: a gate electrode configured to apply gate voltage; a source electrode and a drain electrode, which are configured to extract electric current; an active layer formed of a n-type oxide semiconductor, provided in contact with the source electrode and the drain electrode; and a gate insulating layer provided between the gate electrode and the active layer, wherein the n-type oxide semiconductor is a triclinic crystal compound, a monoclinic crystal compound, or a trigonal crystal compound, each of which is substitutionally doped with at least one dopant selected from the group consisting of a divalent cation, a trivalent cation, a tetravalent cation, a pentavalent cation, and a hexavalent cation, and wherein a valence of the dopant is greater than a valence of a metal ion constituting the n-type oxide semiconductor, excluding the dopant.
摘要翻译：一种场效应晶体管，其包含：施加栅极电压的栅电极; 源电极和漏电极，其被配置为提取电流; 由n型氧化物半导体形成的有源层设置成与源电极和漏电极接触; 以及栅极绝缘层，设置在所述栅电极和所述有源层之间，其中所述n型氧化物半导体是三斜晶体化合物，单斜晶体化合物或三元晶体化合物，其中每一个都被至少一个掺杂剂选自二价阳离子，三价阳离子，四价阳离子，五价阳离子和六价阳离子，并且其中掺杂剂的价态大于构成n型氧化物半导体的金属离子的价态，不包括掺杂剂。

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