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2. 发明授权

EP3004431B1 PROCEDE DE FABRICATION D'UN LINGOT DE SILICIUM DOTE DE JOINTS DE GRAINS SYMETRIQUES 有权
公开(公告)号：EP3004431B1
公开(公告)日：2018-08-22
申请号：EP14729451.6
申请日：2014-05-26
申请人： Commissariat à l'Energie Atomique et aux Energies Alternatives
发明人： FORTIN, Gautier , AMARAL DE OLIVEIRA, Vanessa , CAMEL, Denis , PIHAN, Etienne
IPC分类号： C30B11/14 , C30B29/06 , B28D5/04
CPC分类号： C30B11/14 , B28D5/04 , B28D5/045 , C30B11/002 , C30B15/00 , C30B29/06

3. 发明公开

EP3321397A1 PIEZOELECTRIC MATERIAL, METHOD FOR MANUFACTURING SAME, PIEZOELECTRIC ELEMENT AND COMBUSTION PRESSURE SENSOR 有权
标题翻译：压电材料，其制造方法，压电元件和燃烧压力传感器
公开(公告)号：EP3321397A1
公开(公告)日：2018-05-16
申请号：EP16821131.6
申请日：2016-06-01
申请人： National Institute for Materials Science
发明人： SHIMAMURA Kiyoshi , GARCIA VILLORA Encarnacion Antonia , SAKAGUCHI Isao , OHASHI Naoki
IPC分类号： C30B29/34 , C30B15/00 , C30B33/02 , H01L41/113 , H01L41/187 , H01L41/41 , H01L41/43
CPC分类号： H01L41/1871 , C30B15/00 , C30B29/34 , C30B33/02 , H01L41/113 , H01L41/1132 , H01L41/187 , H01L41/41 , H01L41/43
摘要： A piezoelectric material for a combustion pressure sensor, a method for producing the piezoelectric material, and a combustion pressure sensor using the piezoelectric material are provided. The piezoelectric material of the present invention includes a single crystal containing Ca, Ta, an element M (M is Al or Ga), Si, and O, the single crystal has the same crystal structure as the crystal structure of langasite represented by La 3 Ga 5 SiO 14 , and at least the content of the element M is insufficient for the stoichiometric composition represented by Ca 3 TaM 3 Si 2 O 14 . Preferably, in a case where the element M is Ga, each content of the Ca and the Si is excessive for the stoichiometric composition, and in a case where the element M is Al, the content of the Ca is excessive for the stoichiometric composition, and the content of the Ta is insufficient for the stoichiometric composition.
摘要翻译：提供了用于燃烧压力传感器的压电材料，用于制造该压电材料的方法以及使用该压电材料的燃烧压力传感器。本发明的压电材料包括含有Ca，Ta，元素M（M为Al或Ga），Si和O的单晶，该单晶具有与由La 3 Ga 5 SiO 14表示的硅酸镓镧晶体结构相同的晶体结构，并且至少元素M的含量对于由Ca 3 Ta 3 Si 2 O 14表示的化学计量组成不足。优选地，在元素M为Ga的情况下，对于化学计量组成，Ca和Si各自的含量过量，并且在元素M为Al的情况下，Ca的含量对于化学计量组成过量，并且Ta的含量对于化学计量组成不足。

4. 发明公开

EP3312313A1 LITHIUM NIOBATE SINGLE CRYSTAL SUBSTRATE AND METHOD FOR PRODUCING SAME 审中-公开
标题翻译：铌酸锂单晶衬底及其制造方法
公开(公告)号：EP3312313A1
公开(公告)日：2018-04-25
申请号：EP16811515.2
申请日：2016-06-08
申请人： Sumitomo Metal Mining Co., Ltd.
发明人： KAJIGAYA, Tomio
IPC分类号： C30B29/30 , C30B33/02
CPC分类号： C30B29/30 , C30B15/00 , C30B15/20 , C30B29/20 , C30B33/02 , H03H9/02614
摘要： To provide a lithium niobate (LN) substrate which allows treatment conditions regarding a temperature, a time, and the like to be easily managed and in which an in-plane distribution of a volume resistance value is very small, and a method of producing the same.
A method of producing an LN substrate by using an LN single crystal grown by the Czochralski process, in which an LN single crystal having a Fe concentration of 50 mass ppm or more and 1000 mass ppm or less in the single crystal and processed into a form of a substrate is buried in an Al powder or a mixed powder of Al and Al 2 O 3 , and heat-treated at a temperature of 450°C or more and less than 500°C, to produce a lithium niobate single crystal substrate having a volume resistivity controlled to be within a range of 1×10 8 Ω·cm or more to 1×10 10 Ω·cm or less.
摘要翻译：为了提供容易管理温度和时间等的处理条件，并且体积电阻值的面内分布非常小的铌酸锂（LN）基板及其制造方法相同。一种LN单晶的制造方法，其特征在于，使用在单晶中具有50质量ppm以上且1000质量ppm以下的Fe浓度的LN单晶，通过切克劳斯基法生长的LN单晶，将其埋入Al粉末或Al与Al 2 O 3的混合粉末中，在450℃以上且低于500℃的温度下进行热处理，制作出体积电阻率铌酸锂单晶基板控制在1×10 8Ω·cm以上至1×10 10Ω·cm以下的范围内。

5. 发明公开

EP3305949A1 CRYSTAL MATERIAL, CRYSTAL PRODUCTION METHOD, RADIATION DETECTOR, NON-DESTRUCTIVE INSPECTION DEVICE, AND IMAGING DEVICE 审中-公开
标题翻译：晶体材料，晶体生产方法，辐射探测器，无损检测装置和成像装置
公开(公告)号：EP3305949A1
公开(公告)日：2018-04-11
申请号：EP16800143.6
申请日：2016-05-27
申请人： Tohoku University , C&A Corporation
发明人： KUROSAWA, Shunsuke , YOSHIKAWA, Akira , KAMADA, Kei , YOKOTA, Yuui , OHASHI, Yuji , HORIAI, Takahiko , SHOJI, Yasuhiro , MURAKAMI, Rikito
IPC分类号： C30B29/22 , C09K11/00 , C09K11/79 , G01T1/161 , G01T1/20 , G01T1/202 , H01L31/0232
CPC分类号： C09K11/7774 , C01F17/0043 , C09K11/00 , C30B15/00 , C30B29/22 , G01T1/161 , G01T1/20 , G01T1/2006 , G01T1/202 , G01T1/2023 , H01L27/14663 , H01L31/0232
摘要： Provided is a crystal material that is represented by a general formula (1) : (RE x A 1-x-y-s B y M' s ) 2+α (Si 1-t ,M'' t ) 2+β O 7+γ , has a pyrochlore type structure, is a nonstoichiometric composition, and is a congruent melting composition. In Formula (1), A contains at least one or more selected from Gd, Y, La, Sc, Yb, and Lu; B contains at least one or more selected from La, Gd, Yb, Lu, Y, and Sc; 0.1
摘要翻译：本发明提供以通式（1）表示的晶体材料：（RExA1-xy-sByM's）2 +α（Si1-t，M“t）2 +βO7+γ，具有烧绿石型结构，非化学计量组成，并且是一致的熔融组合物。在式（1）中，A含有选自Gd，Y，La，Sc，Yb和Lu中的至少一种或多种; B含有选自La，Gd，Yb，Lu，Y和Sc中的至少一种或多种; 0.1

6. 发明授权

EP2492379B1 SINGLE CRYSTAL, PROCESS FOR PRODUCING SAME, OPTICAL ISOLATOR, AND OPTICAL PROCESSOR USING SAME 有权
标题翻译：单晶体，其制造方法，光学隔离器和使用相同的光学处理器
公开(公告)号：EP2492379B1
公开(公告)日：2018-02-28
申请号：EP10824951.7
申请日：2010-10-20
申请人： Fujikura Ltd. , National Institute for Materials Science
发明人： SANADA, Kazuo , SHIMAMURA, Kiyoshi , GARCIA, Villora Encarnacion Antonia
IPC分类号： C30B29/28 , C30B15/00 , G02F1/09
CPC分类号： C30B29/28 , C30B15/00 , G02F1/09
摘要： The present invention provides a single crystal for an optical isolator having a Faraday rotation angle exceeding that of TGG single crystal in a wavelength region of 1064 nm or longer or in a wavelength region of shorter than 1064 nm, and is capable of realizing enlargement of crystal size, a production process thereof, an optical isolator, and an optical processor that uses the optical isolator. The single crystal according to the present invention is composed of a terbium aluminum garnet single crystal, and mainly a portion of the aluminum is replaced with lutetium.

7. 发明公开

EP3272914A1 LANTHANUM FLUORIDE SINGLE CRYSTAL, AND OPTICAL COMPONENT 审中-公开
标题翻译：氟化镧单晶和光学元件
公开(公告)号：EP3272914A1
公开(公告)日：2018-01-24
申请号：EP16764721.3
申请日：2016-03-03
申请人： Tokuyama Corporation
发明人： ISHIZU, Sumito , FUKUDA, Kentaro , MATSUO, Kentaro
IPC分类号： C30B29/12 , G02B1/02
CPC分类号： G02B1/02 , C30B15/00 , C30B27/02 , C30B29/12 , G01N27/4074 , G01T1/2935
摘要： A lanthanum fluoride single crystal wherein an alkaline earth metal is added to the lanthanum fluoride single crystal, and internal transmittance of light at 9.3 µm in wavelength is no less than 85 %/mm. The lanthanum fluoride single crystal and an optical component which have high transparency in an infrared region, and can be preferably used for phase plates for lasers, lenses and optical window materials for laser beam machines, gas detectors, flame detectors, infrared cameras, and so on, etc. are provided.
摘要翻译：在氟化镧单晶中添加碱土类金属而成的氟化镧单晶，波长9.3μm的光的内部透射率为85％/ mm以上。氟化镧单晶和在红外区域具有高透明性的光学元件，可以优选用于激光用相位板，激光加工机用透镜，光学窗口材料，气体检测器，火焰检测器，红外线相机等等等。

8. 发明授权

EP2774967B1 UV-EXCITED RED-LIGHT EMITTING MATERIAL, AND LIGHT EMITTING DIODE 有权
标题翻译：紫外激发的红光发射材料和发光二极管
公开(公告)号：EP2774967B1
公开(公告)日：2017-09-06
申请号：EP13785211.7
申请日：2013-04-25
申请人： National Institute for Materials Science
发明人： SHIMAMURA, Kiyoshi , GARCIA VILLORA, Encarnacion Antonia
IPC分类号： C09K11/61 , C09K11/08 , H01L33/50 , C09K11/77 , C30B11/00 , C30B15/00 , C30B29/12
CPC分类号： C09K11/7733 , C09K11/7774 , C30B11/00 , C30B15/00 , C30B29/12 , H01L33/502 , H01L33/504 , H01L2224/13 , H01L2224/48091 , H01L2224/49107 , Y02B20/181 , H01L2924/00014

9. 发明授权

EP2636772B1 COLQUIRIITE-TYPE CRYSTAL, SCINTILLATOR FOR NEUTRON DETECTION, AND NEUTRON RADIATION DETECTOR 有权
标题翻译： Colquiriite水晶，闪烁的中子检测和中子辐射探测器
公开(公告)号：EP2636772B1
公开(公告)日：2017-02-01
申请号：EP11838031.0
申请日：2011-11-01
申请人： Tokuyama Corporation , Tohoku University
发明人： ISHIZU, Sumito , FUKUDA, Kentaro , KAWAGUCHI, Noriaki , YOSHIKAWA, Akira , YANAGIDA, Takayuki , YOKOTA, Yui , FUJIMOTO, Yutaka
IPC分类号： C30B29/12 , C09K11/00 , C09K11/64 , G01T3/06 , C09K11/77 , C30B15/00 , C30B15/08
CPC分类号： G01T3/06 , C09K11/7721 , C30B15/00 , C30B15/08 , C30B29/12

10. 发明授权

EP2692909B1 METHOD FOR SELECTING POLYCRYSTALLINE SILICON ROD, AND METHOD FOR PRODUCING SINGLE-CRYSTALLINE SILICON 有权
标题翻译：一种用于选择一个导频信多晶硅和方法，用于制造多晶硅
公开(公告)号：EP2692909B1
公开(公告)日：2016-10-19
申请号：EP12791960.3
申请日：2012-04-04
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： MIYAO, Shuichi , OKADA, Junichi , NETSU, Shigeyoshi
IPC分类号： C30B29/06 , C01B33/035 , C30B35/00 , G01N23/207
CPC分类号： C30B13/00 , C01B33/035 , C30B15/00 , C30B29/06 , C30B35/007 , G01N23/207

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