专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2000031937A SEQUENTIAL PATH RETRIEVAL METHOD OF MOBILE COMMUNICATION SYSTEM 失效
公开(公告)号：JP2000031937A
公开(公告)日：2000-01-28
申请号：JP15575099
申请日：1999-06-02
申请人： SAMSUNG ELECTRONIC
发明人： KIM HEE-SUB , AHN JAE-MIN
IPC分类号： H04J13/00 , H04B7/26
摘要： PROBLEM TO BE SOLVED: To improve the operation of a sequential retrieval unit by making a retrieval unit retrieving energy at the next retrieving position of the next Walsh symbol when the existence of a signal is confirmed at a specific retrieving position of a Walsh symbol that is not located at the boundary of a power control group and to retrieve it at a retrieving position that is the same as the preceding one of the next Walsh symbol when it is not confirmed. SOLUTION: A retrieval unit retrieves energy at a specific retrieving position of read symbol data (s2) and confirms if it is equal to or more than upper limit that is perliminarily set (s5). If it is not equal to or more than the upper limit, it confirms if it is lower limit (s7). And, if it equals to or less than the lower limit, the retrieval unit records that a signal is not detected at the corresponding retrieving position (s8). When a retrieval result is neither equal to or more than the upper limit nor equal to or less than the lower limit and when the existence of a signal is not decided, it is confirmed whether the current retrieving position is the boundary of power control group (s9). If it is not the boundary, it returns to (s2) and checks energy at the same retrieving position of the next Walsh symbol.

2. 发明专利

JP2000031424A MANUFACTURE OF CAPACITOR OF SEMICONDUCTOR MEMORY DEVICE 失效
公开(公告)号：JP2000031424A
公开(公告)日：2000-01-28
申请号：JP17859199
申请日：1999-06-24
申请人： SAMSUNG ELECTRONIC
发明人： KIM HYOUN-SOO
IPC分类号： H01L27/04 , H01L21/02 , H01L21/822 , H01L21/8242 , H01L27/108
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a capacitor of a semiconductor memory device, wherein the surface area of a storage electrode is increased, while the margin between the storage electrodes is fully assured for preventing micro bridges. SOLUTION: A second insulating film 110 is formed on a plug 109 and a first insulating film 106, and the second insulating film 110 is etched, using a storage-electrode formation mask, until a part of the plug 109 and the first insulating film 105 resulting in formation of a storage electrode opening 111. On both sidewalls of the storage electrode opening 111, a conductive spacer 112, which electrically connected to the plug 109 is formed. An HSG film 113 is formed on the surface of the plug 109 and the conductive spacer 112. The HSG(hemi-spherical grain) film 113 is grown on the inside wall of the storage electrode, so that the microbridge between storage electrodes caused by abnormal growth and excessive growth of the HSG film 113 is prevented.

3. 发明专利

JP2000031306A NONVOLATILE MEMORY DEVICE 失效
公开(公告)号：JP2000031306A
公开(公告)日：2000-01-28
申请号：JP17149899
申请日：1999-06-17
申请人： SAMSUNG ELECTRONIC
发明人： BOKU SHOBIN , BOKU TOKO
IPC分类号： H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792
摘要： PROBLEM TO BE SOLVED: To reduce the area of bulk tapping which is formed for impressing a bulk voltage by containing the bulk tapping in a plurality of dummy bit lines arranged in the columnar direction around a memory cell array and injecting a specific impurity into the dummy bit lines. SOLUTION: In order to reduce the level different between a memory cell array and its peripheral circuit, dummy word lines DW/L and dummy bit lines DE/L are arranged two lines by two lines around the cell array. The dummy bit lines DB/L are made of polysilicon containing an injected P+ impurity and formed for tapping areas. At the spot where the dummy bit lines DB/L and dummy word lines DW/L do not overlap each other, a contact area 1 to be connected to the source and drain of a cell transistor is replaced with a contact area 3 to be connected to a secondary well. The contact 3 can be used as a contact for bulk tapping.

4. 发明专利

JP2000031268A TRANSISTOR MINIMIZED IN NARROW CHANNEL EFFECT AND FORMING METHOD OF TRANSISTOR WITH ELECTRIC FIELD PENETRATION SHUTOFF FILM 失效
公开(公告)号：JP2000031268A
公开(公告)日：2000-01-28
申请号：JP18246099
申请日：1999-06-28
申请人： SAMSUNG ELECTRONIC
发明人： KIM KI-NAM , CHIN SAIKUN , LEE JAE-GYU
IPC分类号： H01L21/76 , H01L21/28 , H01L21/762 , H01L21/765 , H01L21/8242 , H01L27/108
摘要： PROBLEM TO BE SOLVED: To provide a cell transistor which is possessed of a substrate of low impurity concentration and an active layer which is prescribed in width independently of a threshold voltage and minimized in narrow channel effect, and a method of manufacturing a conductive film that is buried in a shallow trench for isolation. SOLUTION: A trench isolation 210 is formed for minimizing the narrow channel effect of the transistor of a semiconductor device. In this case, a conductive film to be buried is provided. A first step where a trench isolation 210 is formed on the substrate surrounding an active region and a prescribed region of the substrate, a second step where a transistor is formed on the active region, a third step where an interlayer insulating film is formed, and a fourth step where a power feed line is formed in the interlayer insulating film so as to be electrically connected to the buried conductive film for the trench isolation 210 for the removal of a threshold voltage of a transistor, are provided.

5. 发明专利

JP2000031113A WET ETCHING DEVICE FOR MANUFACTURING SEMICONDUCTOR ELEMENT AND WET ETCHING METHOD FOR SEMICONDUCTOR ELEMENT USING THE SAME 失效
公开(公告)号：JP2000031113A
公开(公告)日：2000-01-28
申请号：JP17669099
申请日：1999-06-23
申请人： SAMSUNG ELECTRONIC
发明人： KYO RYUU , NIN KOHIN
IPC分类号： H01L21/306 , B05D1/00 , C23F1/02 , H01L21/00 , H01L21/302 , H01L21/311 , H01L21/3213 , H01L21/461
摘要： PROBLEM TO BE SOLVED: To provide a device and etching method therefor with which the controllability and productivity of an etching process are improved by having the etching rate improved, while the concentration of the etchant used is maintained constant during the etching process. SOLUTION: A wet etching device is provided with a bath 20, which can store a liquid chemical diluted with deionized water for wet etching of a specific film of semiconductor element and has an opened top, a heater 22 which can heat the liquid chemical stored in the bath 20, and a cover 24 which has a cooling water line 28 capable of condensing the deionized water evaporated by means of the heater 22 and covers the opened top of the bath 20.

6. 发明专利

JP2000031100A SLURRY SUPPLY SYSTEM FOR SEMICONDUCTOR CMP PROCESS 失效
公开(公告)号：JP2000031100A
公开(公告)日：2000-01-28
申请号：JP15933699
申请日：1999-06-07
申请人： SAMSUNG ELECTRONIC
发明人： KIM SUE-RYEON , KIM SEUNG-UHN , DEN ZAIGO , KO SHIBUN
IPC分类号： B24B1/04 , B24B37/00 , B24B57/02 , H01L21/00 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a slurry supply system for semiconductor CMP process in which secondary particles of slurry are supplied to a CMP equipment while being dispersed into unit particles. SOLUTION: The slurry supply system for semiconductor CMP process supplies slurry 12 stored in a slurry storage tank 11 through a specified slurry supply line to a CMP equipment wherein the slurry supply line is provided with means 12 for transmitting ultrasonic wave to the slurry 12 in order to prevent unit particles of the slurry from being aggregated to secondary particles. Yield of wafer can be enhanced in the following steps by preventing formation of secondary particles due to aggregation of grinding particles in the slurry 12 thereby preventing fine scratch phenomenon on the surface of a wafer 14.

7. 发明专利

JP2000031084A ACTIVATION METHOD OF COMPOUND SEMICONDUCTOR THIN FILM TO P-TYPE 失效
公开(公告)号：JP2000031084A
公开(公告)日：2000-01-28
申请号：JP12737099
申请日：1999-05-07
申请人： SAMSUNG ELECTRONIC
发明人： SHIN GENGI
IPC分类号： H01L21/265 , H01L21/205 , H01L21/324 , H01L33/32 , H01S5/00 , H01S5/323 , H01L21/268 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To drop the peculiar resistance of a GaN compound semiconductor and a heat treatment temperature by irradiating a compound semiconductor thin film with an electromagnetic wave absorbed by a compound semiconductor thin film where p-type impurity is doped. SOLUTION: In an activation process, a compound semiconductor thin film sample 10 is irradiated with an electromagnetic wave absorbed by a compound semiconductor thin film where p-type impurity is doped from a light source 9 and it is heated to the temperature of about 350 deg.C. An electric heater 11 is installed for heating the sample 10. The sample 10 is arranged in a chamber 12. In the case of a GaN thin film where Mg is doped as p-type impurity, peculiar resistance is reduced when the ultraviolet ray of a wavelength area whose energy is higher than hand gap energy is radiated. When it is heated to the temperature of not less than 350 deg.C at that time, the peculiar resistance of the GaN thin film is reduced much more. Ba, Be, Ca, Cd and Zn are used in addition to Mg as such p-type impurity.

8. 发明专利

JP2000031001A MANUFACTURING FACILITIES FOR SEMICONDUCTOR DEVICE, PATTERN FORMATION OF SEMICONDUCTOR DEVICE USING THE SAME, AND PHOTORESIST FOR SEMICONDUCTOR MANUFACTURE TO WHICH THE FACILITY IS APPLIED 失效
公开(公告)号：JP2000031001A
公开(公告)日：2000-01-28
申请号：JP17090499
申请日：1999-06-17
申请人： SAMSUNG ELECTRONIC
发明人： JEOUNG GYU-CHAN , CHOI KWANG-SEOK , TEI SHINKO , KIN EIZEN , RI KO
IPC分类号： H01L21/027 , G03F7/20 , G03F7/40 , H01L21/308
摘要： PROBLEM TO BE SOLVED: To provide the manufacturing facilities for semiconductor devices which form a pattern of preferred size, a pattern forming method for the semiconductor devices, and a photoresist for semiconductor manufacturing which utilize them. SOLUTION: Manufacturing facilities 30 are equipped with a photoresist coating part 36 which coats a wafer with specific photoresist, a development part 4 which forms a photoresist pattern on the wafer exposed after being coated with the photoresist, and a cross-linking reaction part which submits the photoresist pattern to cross-linking reaction so as to provide a stable flow in a flow process of the photoresist pattern. Furthermore, a stage for coating the wafer with the photoresist, a stage for exposing the photoresist while a photomask is arrayed, a stage for forming the photoresist pattern on the wafer, a stage for submitting the photoresist pattern to cross-linking reaction, and a stage for subjecting to flow baking of the photoresist pattern after the cross- linking reaction are included.

9. 发明专利

JP2000030453A BACK BIAS VOLTAGE GENERATING CIRCUIT CORRESPONDING TO FREQUENCY AND ITS METHOD 失效
公开(公告)号：JP2000030453A
公开(公告)日：2000-01-28
申请号：JP11276299
申请日：1999-04-20
申请人： SAMSUNG ELECTRONIC
发明人： KO KOZEN
IPC分类号： G11C11/413 , G11C5/14 , G11C11/40 , G11C11/408
摘要： PROBLEM TO BE SOLVED: To minimize variation of a back bias voltage even in an active mode by decreasing the back bias voltage by pumping corresponding to an operation frequency. SOLUTION: A level sensing section 15 senses whether the back bias voltage VBB is higher than a target voltage level or not. A normal driving section 11 decreases the back bias voltage VBB by pumping, independently of activation of a chip control signal CONC. An active driving section 13 is provided with a counter circuit 17 and an active pump section 19. The counter circuit 17 responds to an activation end part of the chip control signal CONC, and generates a first end part sensing signal FED and a second end part sensing signal RED. When the first end part signal FED or the second end part sensing signal RED is activated, an active pump section 19 decreases back bias voltage by pumping.

10. 发明专利

JP2000030410A DEVICE AND METHOD FOR RECORDING/REPRODUCING OPTICAL DISK 失效
公开(公告)号：JP2000030410A
公开(公告)日：2000-01-28
申请号：JP12527299
申请日：1999-04-30
申请人： SAMSUNG ELECTRONIC
发明人： BOKU HANKI , OH YOUNG-NAM , CHUNG TAE-YUN , KANG JUNG-SUK , MOON SEONG-JIN
IPC分类号： G11B20/10 , G11B7/0037 , G11B7/007 , G11B20/12 , G11B27/00 , G11B27/034 , G11B27/10 , G11B27/32 , H04N5/85 , H04N5/91 , H04N9/804 , H04N9/82
摘要： PROBLEM TO BE SOLVED: To record/reproduce a partial title by partially collecting the audio and video data recorded on a specified area of a disk, setting them in a cell, setting one or more cells in a program, setting the specified part of the recorded audio and video data in the partial title and them recording the cell, the program and the partial title on the disk. SOLUTION: A system controller 512 generates logic information of the program, the cell, etc., of the data to be recorded at a recording mode time, and inputs the start positional information of the partial title (PTT) required by a user through a key input part 514, and generates PTT information by an optional method to record it on the disk 509. On the other hand, at a reproducing mode time, when a next/former PTT command is inputted according to a command inputted by the user through the key input part 514, the system controller 512 reproduces the answering PTT by using the PTT information. Thus, the user accesses the PTT at random in a specified unit for reproducing and recording.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式