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1. 发明专利

JP2008267365A Compressor 有权
标题翻译：压缩机
公开(公告)号：JP2008267365A
公开(公告)日：2008-11-06
申请号：JP2007115210
申请日：2007-04-25
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： KOBAYASHI HIDENORI , MATSUMOTO TAKESHI , KAKIUCHI TAKASHI , YAMAOKA MASAKAZU
IPC分类号： F04B39/00
摘要： PROBLEM TO BE SOLVED: To provide an efficient compressor capable of preventing the suction of bubbles when a great quantity of a liquid coolant or oil flows in from an external cooling circuit or when foaming phenomena occur, and having high reliability not causing liquid compression.
SOLUTION: The liquid coolant and oil 102 are prevented from directly entering a suction port 120 even if a great quantity of the liquid coolant and the oil 102 return from a suction pipe by arranging the suction port 120 extending and opening upward at a position not opposing the suction pipe. The breakage of a compression element 105 caused by liquid compression can be prevented. A temperature of the coolant led to the suction port 120 is lowered, the suction weight of the coolant per unit time is increased, and the efficient compressor can be provided by providing a guide rib on an outer surface 122 at the suction pipe side of a suction muffler 112.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种高效率的压缩机，其能够在大量液体冷却剂或油从外部冷却回路流入时或发生发泡现象时防止气泡吸入，并且具有高可靠性而不引起液体压缩。解决方案：即使大量的液体冷却剂和油102通过将吸入口120设置成向上延伸并向上开口的吸入管102返回，也防止了液体冷却剂和油102直接进入吸入口120 位置不与吸管相对。可以防止由液体压缩引起的压缩元件105的破损。导致吸入口120的冷却剂的温度降低，每单位时间的冷却剂的吸入重量增加，并且可以通过在吸入管侧的外表面122上设置引导肋来提供有效的压缩机吸入消声器112.版权所有（C）2009，JPO＆INPIT

2. 发明专利

JP2007294493A Semiconductor device and its manufacturing method 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2007294493A
公开(公告)日：2007-11-08
申请号：JP2006117312
申请日：2006-04-21
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： MATSUMOTO TAKESHI , MATSUMURA KAZUHIKO
IPC分类号： H01L21/66 , H01L21/3205 , H01L23/52
CPC分类号： H01L2224/11
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device which is provided with an electrode pad structure in a scribe section wherein no bump is left during dicing and the number of semiconductor chips is not reduced, and to provide its manufacturing method. SOLUTION: Current supply pads 7 corresponding to the electrode pads 5 of a scribe PCM4 are provided together in one section of a scribe 3 of the outermost periphery of a wafer 1, and wirings led from the electrode pads 5 of the scribe PCM4 are connected to the corresponding current supply pads 7, so as to arrange the current supply pads 7 like a grid pattern in a manner that they may not be shortcircuited to each other. Due to such the structure, current is supplied to the electrode pad 5 of the scribe PCM4 from the current supply pad 7 during electroless plating, thereby selectively forming a bump on the electrode pad 8 of a semiconductor chip 2 and no bump on the electrode pad 5 of the scribe PCM4, respectively. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种半导体器件，其在划片部分中设置有电极焊盘结构，其中在切割期间没有留下凸起，并且半导体芯片的数量不减少，并且提供其制造方法。解决方案：对应于划片PCM4的电极焊盘5的电流供应焊盘7一起设置在晶片1的最外周边的划线3的一个部分中，并且从刻痕PCM4的电极焊盘5引出的布线连接到相应的电流供应焊盘7，以便以不会相互短路的方式将电流供应焊盘7排列成网格图案。由于这样的结构，在化学镀期间，电流从电流供给焊盘7供给到划片PCM4的电极焊盘5，从而在半导体芯片2的电极焊盘8上选择性地形成凸块，并且在电极焊盘上没有凸块 5分别是抄录PCM4。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2006291242A Gold plating liquid, gold plating method, method for fabricating semiconductor device, and semiconductor device 审中-公开
标题翻译：金镀液，镀金方法，制造半导体器件的方法和半导体器件
公开(公告)号：JP2006291242A
公开(公告)日：2006-10-26
申请号：JP2005109507
申请日：2005-04-06
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： MATSUMOTO TAKESHI
IPC分类号： C25D3/48 , C25D7/12 , H01L21/60
CPC分类号： H01L2224/11
摘要： PROBLEM TO BE SOLVED: To prevent a level difference part of a surface protective film from appearing on the surface of a bump formed thereon. SOLUTION: The concentration of thallium in a sulfurous acid based gold plating liquid for forming a bump is set to the high one of about 30 mg/l, thus the grains of the crystals of the gold plating are made larger than the conventional ones, and a bump 7 is formed by the large gold plating crystals. For example, by performing the gold plating under the conditions that gold plating liquid temperature is 60 to 65 degrees and gold plating current density is 0.4 to 0.8 A/dm 2 , the formation of the bump having a surface condition free from a level difference is made possible regardless of the level difference in a polyimide film as a substrate. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了防止表面保护膜的水平差部分出现在其上形成的凸块的表面上。解决方案：将用于形成凸块的亚硫酸基镀金液中的铊的浓度设定为约30mg / l的高浓度，由此使镀金结晶的晶粒比常规并且由大镀金结晶形成凸块7。例如，通过在镀金液温度为60〜65度，镀金电流密度为0.4〜0.8A / dm 2的条件下进行镀金，形成具有表面不管作为基板的聚酰亚胺膜的水平差如何，都能够实现无水平差的条件。版权所有（C）2007，JPO＆INPIT

4. 发明专利

JP2006277876A Optical disk device 审中-公开
标题翻译：光盘设备
公开(公告)号：JP2006277876A
公开(公告)日：2006-10-12
申请号：JP2005098288
申请日：2005-03-30
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： ICHIYANAGI MASARU , IZUMI MITSUHIKO , MATSUMOTO TAKESHI , MIYAZAKI SHINYA , SAKAI TAKAMASA , HIRAKI TAKESHI
IPC分类号： G11B7/005
摘要： PROBLEM TO BE SOLVED: To accurately extract wobbles and auxiliary information recorded by the wobbles.
SOLUTION: This optical disk device comprises a photodetection part for outputting first and second detection signals, respectively corresponding to first reflected light from an area including a boundary on the outer periphery side of a track and second reflected light from an area, including a boundary on the inner periphery side of the track; first and second gain adjusters for respectively normalizing and outputting the amplitudes of the first and second detection signals; a balance adjustment part for adjusting the output signals of the first and second gain adjusters so that the ratio of the amplitudes of both becomes the ratio, corresponding to balance adjustment signals and outputting the respective signals after adjustment as the first and second detection signals after balance adjustment; a subtractor for obtaining and outputting the difference between the first and second detection signals after the balance adjustment; an auxiliary information extractor for obtaining the accessory information, on the basis of the output of the subtractor; and a control part for generating and outputting the balance adjustment signals so as to be able to accurately obtain the auxiliary information.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：准确地提取由摆动记录的摆动和辅助信息。解决方案：该光盘装置包括：光检测部，用于分别对应于来自包括轨道的外周侧的边界的区域的第一反射光和来自区域的第二反射光，输出第一和第二检测信号，包括在轨道的内周侧的边界; 第一和第二增益调节器，用于分别对第一和第二检测信号的幅度进行标准化和输出; 平衡调整部分，用于调节第一和第二增益调节器的输出信号，使得两者的幅度比成为对应于平衡调整信号的比率，并且输出调整后的各个信号作为平衡后的第一和第二检测信号调整; 减法器，用于在平衡调整之后获取和输出第一和第二检测信号之间的差; 辅助信息提取器，用于根据减法器的输出获得附件信息; 以及用于产生和输出平衡调整信号以便能够准确地获得辅助信息的控制部分。版权所有（C）2007，JPO＆INPIT

5. 发明专利

JP2006161709A Hermetic compressor 有权
标题翻译： HERMETIC压缩机
公开(公告)号：JP2006161709A
公开(公告)日：2006-06-22
申请号：JP2004355157
申请日：2004-12-08
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： MATSUMOTO TAKESHI , IDE TERUMASA , MARUYAMA TOMIO , YAMAOKA MASAKAZU
IPC分类号： F04B39/10
CPC分类号： F04B39/1073
摘要： PROBLEM TO BE SOLVED: To suppress drop of refrigeration capacity and achieve high efficiency by preventing adhesion of a delivery lead and a spring lead.
SOLUTION: A delivery valve device 114 is constructed by fixing the delivery lead 127 provided with an open and close part 132 and a delivery lead retention part 131, the spring lead 128 provided with a movable part 134 and a spring lead retention part 133, a stopper 129 provided with a regulation part 138 and a stopper retention part 137 on a pedestal part 125 of a valve plate 113 in this order. The movable part 134 is bent in a valve seat part 124 side at a spring lead bend part 135 provided on the movable part 134 of the spring lead 128, a tip part 136 is abutted on a plate abutment part 126. Since a space is formed between the movable part 134 of the spring lead 128 and the open and close part 132 of the delivery lead 127 and both of the spring lead 128 and the delivery lead are not adhered, close delay of the delivery lead 127 can be prevented.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：通过防止输送引线和弹簧引线的粘附来抑制制冷量的下降并实现高效率。解决方案：输送阀装置114通过固定设置有开闭部分132和输出引线保持部分131的输送引线127，设置有可移动部分134的弹簧引线128和弹簧引线保持部分 133，在阀板113的基座部125上依次设置有限制部138和止动器保持部137的止动件129。可动部134在设置在弹簧引线128的可动部134上的弹簧引导弯曲部135处在阀座部124侧弯曲，前端部136抵接在板抵接部126上。由于形成空间在弹簧引线128的可动部分134与输出引线127的打开和关闭部分132之间以及弹簧引线128和输出引线两者之间不会粘附，从而可以防止输出引线127的闭合延迟。版权所有（C）2006，JPO＆NCIPI

6. 发明专利

JP2006005311A Semiconductor device and its manufacturing method 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2006005311A
公开(公告)日：2006-01-05
申请号：JP2004182799
申请日：2004-06-21
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： MATSUMOTO TAKESHI
IPC分类号： H01L21/822 , H01L27/04
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device whose area is small and whose packing density is improved.
SOLUTION: The semiconductor device includes metal oxide semiconductor (MOS) transistors (2a and 2b) in a semiconductor chip substrate (1). At least one p-channel MOS transistor (2b) is arranged just below an electrode pad (3) and in a prescribed distance from just below. An n-channel MOS transistor (2a) is not arranged. Namely, the p-channel MOS transistor (2b) is disposed in a part loaded in the assembly process of a post process including the electrode pad. The n-channel MOS transistor (2a) is installed in a part except for the part loaded in the assembly process of the post process including the electrode pad.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供面积小并且其包装密度提高的半导体器件。解决方案：半导体器件在半导体芯片衬底（1）中包括金属氧化物半导体（MOS）晶体管（2a和2b）。至少一个p沟道MOS晶体管（2b）布置在电极焊盘（3）的正下方，并且距离恰好在下方规定的距离。不配置n沟道MOS晶体管（2a）。也就是说，p沟道MOS晶体管（2b）被布置在负载在包括电极焊盘的后处理的组装过程中的部分中。 n沟道MOS晶体管（2a）安装在除了包括电极焊盘在内的后处理的组装过程中的部分之外的部分。版权所有（C）2006，JPO＆NCIPI

7. 发明专利

JP2004319549A Semiconductor device and its manufacturing method 审中-公开
公开(公告)号：JP2004319549A
公开(公告)日：2004-11-11
申请号：JP2003107233
申请日：2003-04-11
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： SHIMOISHIZAKA NOZOMI , FUNAKOSHI HISASHI , TANAKA SHUSUKE , MATSUMOTO TAKESHI , TAMURA JUN
IPC分类号： H01L21/60
CPC分类号： H01L2224/11 , H01L2224/14
摘要： PROBLEM TO BE SOLVED: To enhance recognizability of a registration mark by enhancing contrast between the registration mark and other regions.
SOLUTION: The semiconductor device comprises a semiconductor element 21, a plurality of semiconductor element electrodes 22 arranged on the semiconductor element 21, a passivation film 23 for covering and protecting the surface of the semiconductor element 21, a first opening 24 formed in the passivation film 23 to open the upper part of the semiconductor element electrode 22, a metal film 25 formed on the semiconductor element electrode 22, an electrolytic plating bump 27 formed on the metal film 25, and a first registration mark 26 formed on the passivation film 23. Since contrast between the first registration mark 26 and other regions can be enhanced, recognizability of the first registration mark 26 can be enhanced at the time of COG packaging.
COPYRIGHT: (C)2005,JPO&NCIPI

8. 发明专利

JP2004172423A Semiconductor device and its manufacturing method 审中-公开
公开(公告)号：JP2004172423A
公开(公告)日：2004-06-17
申请号：JP2002337350
申请日：2002-11-21
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： MATSUMOTO TAKESHI , SHIMOISHIZAKA NOZOMI , FUNAKOSHI HISASHI , TAMURA JUN
IPC分类号： H01L23/12 , H01L21/60
CPC分类号： H01L2224/11
摘要： PROBLEM TO BE SOLVED: To prevent a state where a bump is scarcely formed so as to realize a semiconductor device which hardly causes a bonding failure in an assembly process thereafter. SOLUTION: A barrier metal 4 is formed on a wafer 1 where a semiconductor electrode 2 and a surface protective film 3 are formed, then a bump resist 5 is applied on all the surface of the wafer 1, and an opening is formed to a part of the bump resist 5 where a bump 6 is to be formed. At this time, the bump resist 5 is provided with an opening located on the semiconductor electrode 2, and a protruding bump resist 5a is provided at the center of the opening. Thereafter, the bump 6 is formed through a plating process, then the bump resist 5 is removed, and the disused part of the barrier metal 4 is removed. In the plating process, the bump 6 is formed in a state in which the protruding bump resist 5a has been formed at the center of the opening, so that air is prevented from spreading through all the bump 6 by the tension of a plating solution, and a non-plated area occurs only partially. COPYRIGHT: (C)2004,JPO

9. 发明专利

JPH1060326A CONDUCTIVE INK 失效
公开(公告)号：JPH1060326A
公开(公告)日：1998-03-03
申请号：JP21701596
申请日：1996-08-19
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： OSHIMA KENJI , TAKAO SHIGEYUKI , MATSUMOTO TAKESHI , SAKAGAMI MEGUMI
IPC分类号： B41J2/01 , C09D11/00 , C09D11/02 , C09D11/033 , C09D11/037 , C09D11/322 , C09D11/328 , C09D11/38 , C09D11/52
摘要： PROBLEM TO BE SOLVED: To obtain an ink which has a low reactivity to a counter electrode and exhibits very little change in boiling starting time even when left standing for a long time without being delivered by incorporating a specific potential- adjusting agent into conductive ink. SOLUTION: This ink contains 0.01-10wt.%, pref. 0.01-2wt.%, still pref. 0.05-1.5wt.% at least one potential-adjusting agent having an oxidizing power and pref. selected from among potassium ferricyanate, potassium permanganate, hydrogen peroxide water, sodium nitrite, iron aminopolycarboxylates (e.g. iron ethylenediaminetetraacetate), sodium metaborate, and sodium benzoate. Thus, the oxidation-reduction potential (in terms of the standard hydrogen electrode potential measured with a glass electrode for pH measurement) at 25 deg.C is set pref. to 140-310mV, still pref. to 190-240mV.

10. 发明专利

JPH08109343A INK FOR INK-JET PRINTER 失效
公开(公告)号：JPH08109343A
公开(公告)日：1996-04-30
申请号：JP24601694
申请日：1994-10-12
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： TANAKA HISAHIRO , MATSUMOTO TAKESHI
IPC分类号： C09D11/00 , C09D11/322 , C09D11/324 , C09D11/326 , C09D11/328 , C09D11/38
摘要： PURPOSE: To obtain an ink for ink-jet printers which is excellent in rapid drying on the printing paper without color running on color printing and shows high jetting stability and good jetting response by formulating a specific compound to a colorant, a humidifier, an electrolyte and a solvent. CONSTITUTION: This ink comprises (A) a colorant, (B) a humidifier for preventing the nozzle top from drying (for example, polyethylene glycol), (C) an electrolyte (preferably diethanolamine hydrochloride of formula I (R1 to R3 are each H, CH2 OH; X is a halogen or BF4 ), (D) a solvent (preferably water), (E) a compound of formula II (M1 , M2 are each an alkali metal ion, a quaternary ammonium ion; R is an 7-12C alkylene) (for example, sodium octyldiphenyl ether disulfonate). It is preferred that the amounts of components B, C and D are 0.5-5, 50-70 and 1-50wt.%, respectively.

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