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1. 发明专利

JP2014006282A Resist composition and method for forming resist pattern 有权
标题翻译：用于形成电阻图案的耐蚀组合物和方法
公开(公告)号：JP2014006282A
公开(公告)日：2014-01-16
申请号：JP2012139756
申请日：2012-06-21
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： NAKAMURA TAKESHI , YOKOYA JIRO , NITO TAKEHITO , SHIMIZU HIROAKI
IPC分类号： G03F7/004 , G03F7/038 , G03F7/039 , H01L21/027
CPC分类号： G03F7/004 , G03F7/0045 , G03F7/0382 , G03F7/0397 , G03F7/2041 , G03F7/38 , Y10S430/12 , Y10S430/121
摘要： PROBLEM TO BE SOLVED: To provide a resist composition excellent in post exposure delay stability.SOLUTION: The resist composition generates a base by exposure and exhibits an increase in the solubility with an alkali developing solution by an action of an acid. The resist composition comprises: a base material component (A) exhibiting an increase in the solubility with an alkali developing solution by an action of an acid; an acidic compound component (G1) comprising a nitrogen-containing cation having 7 or less pKa and a counter anion; and a buffer component (K) comprising a nitrogen-containing cation and a counter anion that functions as a conjugated base for an acid having 0 to 5 pKa.
摘要翻译：要解决的问题：提供后曝光延迟稳定性优异的抗蚀剂组合物。解决方案：抗蚀剂组合物通过曝光产生碱，并且通过酸的作用显示与碱性显影液的溶解度的增加。抗蚀剂组合物包括：通过酸的作用显示与碱性显影液的溶解度增加的基材成分（A）含有7个以下pKa的含氮阳离子和抗衡阴离子的酸性化合物成分（G1）和含有含氮阳离子和抗衡阴离子的缓冲成分（K），其作为0〜5pKa的酸的共轭碱。

2. 发明专利

JP2013127525A Resist composition and resist pattern formation method 有权
标题翻译：电阻组合和电阻形成方法
公开(公告)号：JP2013127525A
公开(公告)日：2013-06-27
申请号：JP2011276439
申请日：2011-12-16
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： SHIMIZU HIROAKI , NITO TAKEHITO
IPC分类号： G03F7/038 , C08F212/14 , C08F220/12 , G03F7/039 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a resist pattern formation method useful for forming a fine pattern, and a resist composition for use in the formation.SOLUTION: There is provided a resist pattern formation method including the steps of: using a resist composition containing a base component (A) having an acidic group, a compound (C) capable of forming an association structure with the acidic group, and an acid generator composition (B) that generates an acid having a higher degree of acidity than the above acidic group by being exposed to light, so as to form a resist film 2 with an association structure of the acidic group and the compound (C) on a supporting member 1; exposing the acidic group by exposing the resist film 2 to light and forming a new association structure of the acid generated from the acid generator composition (B) and the compound (C) forming the aforementioned association structure; and developing the resist film 2 with a developing solution containing an organic solvent. Further, there is provided a resist composition for use in this formation method.
摘要翻译：要解决的问题：提供用于形成精细图案的抗蚀剂图案形成方法和用于形成的抗蚀剂组合物。解决方案：提供了一种抗蚀剂图案形成方法，包括以下步骤：使用含有具有酸性基团的基础组分（A），能够与酸性基团形成缔合结构的化合物（C）的抗蚀剂组合物，和通过曝光而产生酸度高于酸性的酸的酸产生剂组合物（B），从而形成具有酸性基团和化合物（C）的缔合结构的抗蚀剂膜2 ）在支撑构件1上; 通过使抗蚀剂膜2曝光而暴露于酸性基团，并形成由酸产生剂组合物（B）和形成上述缔合结构的化合物（C）产生的酸的新缔合结构; 并用含有机溶剂的显影液显影抗蚀膜2。此外，提供了用于该形成方法的抗蚀剂组合物。版权所有（C）2013，JPO＆INPIT

3. 发明专利

JP2012173419A Resist composition and method for forming resist pattern 有权
标题翻译：用于形成电阻图案的耐蚀组合物和方法
公开(公告)号：JP2012173419A
公开(公告)日：2012-09-10
申请号：JP2011033630
申请日：2011-02-18
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： SHIMIZU HIROAKI , ABE SHO , NITO TAKEHITO
IPC分类号： G03F7/004 , C08F220/28 , G03F7/038 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0045 , G03F7/0046 , G03F7/0382 , G03F7/0397 , G03F7/2041 , G03F7/30 , G03F7/325 , Y10S430/12 , Y10S430/122 , Y10S430/123
摘要： PROBLEM TO BE SOLVED: To provide a resist composition excellent in lithographic characteristics and pattern features and to provide a method for forming a resist pattern using the resist composition.SOLUTION: The resist composition comprises a base component (A) showing changes in the solubility with a developing solution by an action of an acid, a basic compound component (C), and an acid generator component (B) generating an acid by exposure. The acid generator component (B) contains a compound expressed by a formula (b1); and the basic compound component (C) contains at least one compound expressed by formulae (c1) to (c3).
摘要翻译：要解决的问题：提供光刻特性和图案特征优异的抗蚀剂组合物，并提供使用该抗蚀剂组合物形成抗蚀剂图案的方法。解决方案：抗蚀剂组合物包含基本组分（A），其显示通过酸的作用显影溶液的溶解度的变化，碱性化合物组分（C）和产生酸的酸产生剂组分（B）通过曝光。酸发生剂组分（B）含有由式（b1）表示的化合物; 碱性化合物成分（C）含有至少一种式（c1）〜（c3）表示的化合物。版权所有（C）2012，JPO＆INPIT

4. 发明专利

JP2011081046A Resist composition and method of forming resist pattern 有权
标题翻译：耐蚀组合物和形成耐力图案的方法
公开(公告)号：JP2011081046A
公开(公告)日：2011-04-21
申请号：JP2009230856
申请日：2009-10-02
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： UTSUMI YOSHIYUKI , IRIE MAKIKO , SHIMIZU HIROAKI , NITO TAKEHITO
IPC分类号： G03F7/004 , C08F220/10 , G03F7/039 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a resist composition and a method of forming a resist pattern using the resist composition. SOLUTION: The resist composition contains: base material component (A) caused to change in solubility to an alkali developing liquid by the action of acid; an acid generator component (B) caused to generate acid by exposure; and a nitrogen-containing organic compound (D). The nitrogen-containing organic compound (D) contains a compound expressed by general formula (d1). In the formula, R 1 is a hydrocarbon group of 5C or more, and R 2 and R 3 are an aliphatic hydrocarbon group or -C(=O)-O-R 1 each may have a hydrogen atom and a substituent independently. The plurality of R 1 s in the formula may be the same or different and, R 2 and R 3 may be mutually bonded to form a ring. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种抗蚀剂组合物和使用该抗蚀剂组合物形成抗蚀剂图案的方法。抗蚀剂组合物含有：通过酸的作用使碱性成分（A）对碱性显影液的溶解度发生变化; 酸产生剂组分（B）通过暴露产生酸; 和含氮有机化合物（D）。含氮有机化合物（D）含有通式（d1）表示的化合物。在该式中，R 1是5或5以上的烃基，R SP＆gt;和＆lt; SP＆gt; 3＆lt; SP＆gt; 3是脂族烃基或-C （= O）-OR 1 各自可以独立地具有氢原子和取代基。式中的多个R 1 SP 1可以相同或不同，并且可以相互键合R 2和R 3彼此结合形成环。版权所有（C）2011，JPO＆INPIT

5. 发明专利

JP2013072975A Method for forming resist pattern 有权
标题翻译：形成电阻图案的方法
公开(公告)号：JP2013072975A
公开(公告)日：2013-04-22
申请号：JP2011211471
申请日：2011-09-27
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： NITO TAKEHITO , NAKAMURA TAKESHI , SHIMIZU HIROAKI , YOKOYA JIRO
IPC分类号： G03F7/004 , C08F20/58 , G03F7/038 , G03F7/039 , H01L21/027
CPC分类号： G03F7/2041 , G03F7/0045 , G03F7/0046 , G03F7/0397
摘要： PROBLEM TO BE SOLVED: To provide a method for forming a resist pattern capable of forming a negative pattern having high resolution with suppressed elution.SOLUTION: There is provided a method for forming a resist pattern, the method comprising the steps of: (1) forming a resist film by applying a resist composition comprising a base component whose solubility to an alkali developing solution is increased by an action of an acid and a photobase generator component which generates a base upon exposure to light onto a support; (2) subjecting the resist film to immersion exposure through an immersion medium; (3) baking the film after the step (2) to neutralize a base generated from the photobase generator component by exposure and an acid preliminarily supplied to the resist film in an exposed portion and increasing the solubility to an alkali developing solution of the base component by an action of the acid preliminarily supplied to the resist film in an unexposed portion; and (4) subjecting the resist film to alkali developing to form a negative resist pattern in which the unexposed portion is dissolved and removed. The resist film has a receding contact angle for water of 65° or more.
摘要翻译：要解决的问题：提供一种形成能够形成具有高分辨率的负图案并具有抑制洗脱的抗蚀剂图案的方法。提供了一种形成抗蚀剂图案的方法，所述方法包括以下步骤：（1）通过涂布抗蚀剂组合物形成抗蚀剂组合物，所述抗蚀剂组合物包含碱性组分，其对碱性显影液的溶解度增加酸和光碱产生剂组分的作用，其在暴露于载体上时产生碱; （2）使抗蚀剂膜通过浸渍介质浸渍曝光; （3）在步骤（2）之后烘烤膜以通过曝光中和由基底产生剂组分产生的碱和在暴露部分中预先供应到抗蚀剂膜的酸，并增加其对碱性组分的碱性显影溶液的溶解度通过在未曝光部分中预先供应到抗蚀剂膜的酸的作用; 和（4）使抗蚀剂膜进行碱显影以形成其中未曝光部分被溶解和去除的负抗蚀剂图案。抗蚀剂膜具有65°以上的水的后退接触角。版权所有（C）2013，JPO＆INPIT

6. 发明专利

JP2013068821A Resist composition, and method for forming resist pattern 有权
标题翻译：抗蚀剂组合物和形成耐火图案的方法
公开(公告)号：JP2013068821A
公开(公告)日：2013-04-18
申请号：JP2011207772
申请日：2011-09-22
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： NAKAMURA TAKESHI , YOKOYA JIRO , SHIMIZU HIROAKI , NITO TAKEHITO
IPC分类号： G03F7/038 , C08F12/14 , C08F16/14 , C08F20/10 , G03F7/004 , G03F7/039 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a method for forming a resist pattern for forming a negative pattern, and a resist composition which is usable for the method and excellent in storage stability.SOLUTION: The resist composition includes a base component in which solubility to alkaline developer increases by action of an acid, a photobase generator component which generates a base by exposure, an acid supply component, and a compound (F) which includes at least one kind selected from a fluorine atom and silicon atom, and does not include an acid decomposable group whose polarity increases by action of an acid. The resist pattern formation method includes a step (1) of coating a supporter with the resist composition to form a resist film, a step (2) of exposing the resist film, a step (3) of baking the resist film after the step (2), and a step (4) of alkali-developing the resist film and forming the negative resist pattern in which unexposed part of the resist film is dissolved and removed. The resist composition used in the step (1) is also provided.
摘要翻译：要解决的问题：提供一种用于形成用于形成负型图案的抗蚀剂图案的方法和可用于该方法并且优异的储存稳定性的抗蚀剂组合物。解决方案：抗蚀剂组合物包括其中碱性显影剂的溶解度通过酸的作用增加的碱成分，通过曝光产生碱的光碱产生剂组分，酸供应组分和化合物（F），其包括在至少一种选自氟原子和硅原子，并且不包括通过酸的作用极性增加的酸可分解基团。抗蚀剂图形形成方法包括：用抗蚀剂组合物涂覆支持体以形成抗蚀剂膜的步骤（1），曝光抗蚀剂膜的步骤（2），在步骤之后烘烤抗蚀剂膜的步骤（3） 2）和将抗蚀剂膜碱显影并形成抗蚀剂图案的步骤（4），其中抗蚀剂膜的未曝光部分被溶解并除去。还提供了在步骤（1）中使用的抗蚀剂组合物。版权所有（C）2013，JPO＆INPIT

7. 发明专利

JP2012230328A Method for forming resist pattern and resist composition for negative development 有权
标题翻译：用于形成抗性图案和耐性组合物用于负面发展的方法
公开(公告)号：JP2012230328A
公开(公告)日：2012-11-22
申请号：JP2011099952
申请日：2011-04-27
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： SHIMIZU HIROAKI , NITO TAKEHITO
IPC分类号： G03F7/038 , G03F7/039 , H01L21/027
CPC分类号： G03F7/325 , G03F7/0046 , G03F7/0397 , G03F7/11 , G03F7/2041
摘要： PROBLEM TO BE SOLVED: To provide a method for forming a resist pattern, and a resist composition.SOLUTION: The method for forming a resist pattern includes the steps of: forming a resist film on a support by using a resist composition containing a base component (A) whose solubility with an organic solvent decreases by an action of an acid, an acid generator component (B) generating an acid by exposure, and a fluorine-containing polymer compound; and forming a resist pattern by patterning the resist film by negative development using a developing solution containing an organic solvent. The base component (A) contains a resin component (A1) having a structural unit (a1) derived from an acrylate and containing an acid-decomposable group that shows increase in the polarity by the action of the acid. The dissolution rates of the resin component (A) and of the fluorine-containing polymer compound (F) with a developing solution are 10 nm/s or more, respectively, and an absolute difference in the dissolution rate of the resin component (A) and the fluorine-containing polymer compound (F) with a developing solution is 80 nm/s or less.
摘要翻译：要解决的问题：提供形成抗蚀剂图案的方法和抗蚀剂组合物。解决方案：形成抗蚀剂图案的方法包括以下步骤：通过使用含有与有机溶剂的溶解度随着酸的作用而降低的碱成分（A）的抗蚀剂组合物在载体上形成抗蚀剂膜，通过曝光产生酸的酸发生剂组分（B）和含氟聚合物化合物; 以及通过使用含有有机溶剂的显影溶液的负显影图案化抗蚀剂膜来形成抗蚀剂图案。基础成分（A）含有具有来自丙烯酸酯的结构单元（a1）的树脂成分（A1），其含有通过酸的作用显示极性升高的酸分解基团。树脂成分（A）和含氟高分子化合物（F）与显影液的溶解速度分别为10nm / s以上，树脂成分（A）的溶解速度的绝对差异，含显色液的含氟高分子化合物（F）为80nm / s以下。版权所有（C）2013，JPO＆INPIT

8. 发明专利

JP2012132949A Pattern forming method 有权
标题翻译：图案形成方法
公开(公告)号：JP2012132949A
公开(公告)日：2012-07-12
申请号：JP2010282430
申请日：2010-12-17
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： NITO TAKEHITO , YOKOYA JIRO , SAITO HIROKUNI
IPC分类号： G03F7/40 , G03F7/039 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a pattern forming method useful for formation of a fine pattern.SOLUTION: The pattern forming method includes: a step (1) of forming a positive resist pattern 2 on a support 1 by one or more kinds of positive resist compositions of which the solubility in alkaline developers is increased by exposure to light; a step (2) of forming a pattern inversion film 6 by applying a composition for pattern inversion containing an organic solvent (S) not dissolving the positive resist pattern, on the support 1 on which the positive resist pattern 2 has been formed; and a step (3) of forming a resist pattern by removing the positive resist pattern 2 by development of the pattern inversion film 6 using an organic solvent developer dissolving the positive resist pattern 2. During the development in the step (3), the solubility of the pattern inversion film 6 in the organic solvent developer is lower than that of the positive resist pattern 2 in the organic solvent developer.
摘要翻译：要解决的问题：提供用于形成精细图案的图案形成方法。图案形成方法包括：通过一种或多种正性抗蚀剂组合物在载体1上形成正性抗蚀剂图案2的步骤（1），其中在碱性显影剂中的溶解度通过曝光增加; 通过在其上形成有正性抗蚀剂图案2的支撑体1上涂布含有不溶解正性抗蚀剂图案的有机溶剂（S）的图案转换用组合物来形成图案转印膜6的工序（2）以及通过使用溶解正性抗蚀剂图案2的有机溶剂显影剂的图案转印膜6的显影除去正性抗蚀剂图案2来形成抗蚀剂图案的步骤（3）。在步骤（3）的显影过程中，溶解度在有机溶剂显影剂中的图案转印膜6的含量低于有机溶剂显影剂中的正性抗蚀剂图案2。版权所有（C）2012，JPO＆INPIT

9. 发明专利

JP2010170053A Positive resist composition and resist pattern forming method 有权
标题翻译：积极抵抗组合和阻力图形成方法
公开(公告)号：JP2010170053A
公开(公告)日：2010-08-05
申请号：JP2009014710
申请日：2009-01-26
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： SHIMIZU HIROAKI , MORI YOSHITAKA , HIRANO ISAO , TSUCHIYA JUNICHI , NITO TAKEHITO , HIRANO TOMOYUKI , DAZAI NAOHIRO , MATSUMIYA YU , SHIONO HIROHISA
IPC分类号： G03F7/039 , C08F20/26 , G03F7/004 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a positive resist composition for forming a resist pattern of good profile with small LWR, and matching well with a substrate, and also to provide a resist pattern forming method. SOLUTION: The positive resist composition contains: a base component (A) which exhibits increased solubility in an alkali developer under the action of an acid; and an acid generator component (B) which generates an acid upon exposure. The base component (A) contains a polymeric compound (A1) having: a constitutional unit (a0) derived from a specific acrylic ester containing an aliphatic hydrocarbon group having a carboxyl group at a terminal; at least two kinds of constitutional units (a1) derived from an acrylic ester containing an acid-dissociable, dissolution-inhibiting group; and a constitutional unit (a2) derived from an acrylic ester containing a lactone-containing cyclic group. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于形成具有小LWR的良好轮廓的抗蚀剂图案的正性抗蚀剂组合物，并且与基底良好地匹配，并且还提供抗蚀剂图案形成方法。正性抗蚀剂组合物含有：在酸性作用下在碱性显影剂中表现出增加的溶解度的碱成分（A）和在曝光时产生酸的酸发生剂组分（B）。碱成分（A）含有具有以下成分的高分子化合物（A1）：由具有末端具有羧基的脂肪族烃基的特定丙烯酸酯衍生的结构单元（a0）至少两种衍生自含有酸解离的溶解抑制基团的丙烯酸酯的结构单元（a1）; 和由含有内酯的环状基团的丙烯酸酯衍生的结构单元（a2）。版权所有（C）2010，JPO＆INPIT

10. 发明专利

JP2010002870A Resist composition for liquid immersion lithography, resist pattern forming method, and fluorine-containing polymer compound 有权
标题翻译：用于液体渗透光刻，耐蚀图案形成方法和含氟聚合物化合物的耐蚀组合物
公开(公告)号：JP2010002870A
公开(公告)日：2010-01-07
申请号：JP2008163861
申请日：2008-06-23
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： SHIONO HIROHISA , HIRANO TOMOYUKI , FURUYA SANAE , DAZAI NAOHIRO , SHIMIZU HIROAKI , KUROSAWA TSUYOSHI , NITO TAKEHITO , NAKAMURA TAKESHI
IPC分类号： G03F7/039 , C08F220/22 , G03F7/004 , H01L21/027
CPC分类号： C08F214/18 , C08F220/18 , C08F220/24 , C08F220/28 , G03F7/0046 , G03F7/0392 , G03F7/0397 , G03F7/2041 , Y10S430/108 , Y10S430/111
摘要： PROBLEM TO BE SOLVED: To provide a resist composition suitable for liquid immersion lithography, a resist pattern forming method using the resist composition, and a fluorine-containing polymer compound useful as an additive used in the resist composition. SOLUTION: The resist composition for liquid immersion lithography includes a fluorine-containing polymer compound (F) having a constitutional unit (f1) having a base-dissociable group and a constitutional unit (f2) represented by a specific structure, a base component (A) whose solubility in an alkali developer changes under the action of an acid, and an acid generator component (B) which generates an acid upon exposure to light. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供适用于液浸光刻的抗蚀剂组合物，使用该抗蚀剂组合物的抗蚀剂图案形成方法和用作抗蚀剂组合物中使用的添加剂的含氟聚合物化合物。解决方案：液浸光刻用抗蚀剂组合物包括具有碱解离基团的结构单元（f1）和由特定结构表示的结构单元（f2）的含氟聚合物化合物（F），碱在酸性显影剂中在碱性显影剂中的溶解度变化的组分（A）和在曝光时产生酸的酸产生剂组分（B）。版权所有（C）2010，JPO＆INPIT

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