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91. 发明授权

US08933386B2 Optical sensor device and method of manufacturing the same 有权
标题翻译：光传感器装置及其制造方法
公开(公告)号：US08933386B2
公开(公告)日：2015-01-13
申请号：US13669858
申请日：2012-11-06
申请人： Seiko Instruments Inc.
发明人： Hitoshi Kamamori , Sadao Oku , Hiroyuki Fujita , Koji Tsukagoshi , Keiichiro Hayashi
IPC分类号： G01J1/42 , H01L31/0203
CPC分类号： G01J1/42 , H01L31/0203 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/73265 , H01L2924/181 , H01L2924/3025 , Y10T156/1039 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： Provided is a high-reliability, compact, and low-cost optical sensor device. The optical sensor device includes a glass lid substrate (2), a glass substrate (9) with a cavity having divided and exposed through-hole electrodes (5) on the periphery thereof, and an optical sensor element (3) mounted on the glass lid substrate, and has a structure in which the glass lid substrate and the glass substrate with a cavity are bonded together. By hermetically sealing with the glass substrates, high reliability is secured. By using the divided through-hole electrodes, the package size is reduced and the number of devices which can be produced in a batch in the manufacture increases, which enables cost reduction.
摘要翻译：提供了高可靠性，紧凑型和低成本的光学传感器装置。光学传感器装置包括玻璃盖基板（2），具有在其周边上具有分开和暴露的通孔电极（5）的空腔的玻璃基板（9）和安装在玻璃上的光学传感器元件（3）盖基板，并且具有玻璃盖基板和具有空腔的玻璃基板结合在一起的结构。通过与玻璃基板气密密封，确保高可靠性。通过使用分割的通孔电极，封装尺寸减小，并且在制造中可以批量生产的装置的数量增加，这降低了成本。

92. 发明申请

US20140368178A1 VOLTAGE REGULATOR 审中-公开
标题翻译：电压稳压器
公开(公告)号：US20140368178A1
公开(公告)日：2014-12-18
申请号：US14295001
申请日：2014-06-03
申请人： Seiko Instruments Inc.
发明人： Osamu UEHARA
IPC分类号： H02M3/156
CPC分类号： G05F1/56
摘要： Provided is a voltage regulator that uses an NMOS transistor as an output transistor and is low in power consumption. The voltage regulator includes an output transistor formed of an NMOS transistor, and a voltage drop circuit connected between a drain of the output transistor and a power supply.
摘要翻译：提供了使用NMOS晶体管作为输出晶体管并且功耗低的电压调节器。电压调节器包括由NMOS晶体管形成的输出晶体管和连接在输出晶体管的漏极和电源之间的电压降电路。

93. 发明授权

US08902645B2 Semiconductor memory circuit 有权
标题翻译：半导体存储电路
公开(公告)号：US08902645B2
公开(公告)日：2014-12-02
申请号：US14033926
申请日：2013-09-23
申请人： Seiko Instruments Inc.
发明人： Kazuhiro Tsumura
IPC分类号： G11C16/04 , G11C16/12 , G11C16/06 , G11C16/24
CPC分类号： G11C16/24 , G11C16/06 , G11C16/12
摘要： Provided is a semiconductor memory circuit excellent in long-term reliability and reading characteristics and having low current consumption. The semiconductor memory circuit includes: a first inverter; a first non-volatile memory, which is electrically writable; a second inverter; and a second non-volatile memory, the first inverter having an output connected to a source of the first non-volatile memory, the first non-volatile memory having a drain connected to an input of the second inverter, the second inverter having an output connected to a source of the second non-volatile memory, the second non-volatile memory having a drain connected to an input of the first inverter, the drain of the second non-volatile memory serving as an output of the semiconductor memory circuit.
摘要翻译：提供了长期可靠性和读取特性优异且电流消耗低的半导体存储电路。半导体存储电路包括：第一反相器; 第一非易失性存储器，其是可电可写的; 第二个逆变器; 和第二非易失性存储器，所述第一反相器具有连接到所述第一非易失性存储器的源极的输出，所述第一非易失性存储器具有连接到所述第二反相器的输入的漏极，所述第二反相器具有输出连接到第二非易失性存储器的源极，第二非易失性存储器具有连接到第一反相器的输入的漏极，第二非易失性存储器的漏极用作半导体存储器电路的输出。

94. 发明授权

US08885444B2 Analog electronic watch 有权
标题翻译：模拟电子手表
公开(公告)号：US08885444B2
公开(公告)日：2014-11-11
申请号：US13785412
申请日：2013-03-05
申请人： Seiko Instruments Inc.
发明人： Makoto Mitani , Kotaro Watanabe
IPC分类号： G04C3/00 , G04G3/00
CPC分类号： G04G3/00 , G04G19/04
摘要： The analog electronic watch includes: a crystal oscillator; an oscillator circuit; a frequency divider circuit; an output control circuit; a constant voltage circuit; and a cell. The constant voltage circuit and the output control circuit are powered from the cell. The oscillator circuit and the frequency divider circuit are powered from the constant voltage circuit. The constant voltage circuit is capable of outputting a first constant voltage and a second constant voltage in a switchable manner. The second constant voltage is a voltage which is equal to or lower than a cell voltage. The first constant voltage is a voltage which is smaller than the second constant voltage. The constant voltage is switched to the second constant voltage in a period of outputting the motor drive pulse.
摘要翻译：模拟电子手表包括：晶振; 振荡电路; 分频器电路; 输出控制电路; 恒压电路; 和一个单元格。恒压电路和输出控制电路由电池供电。振荡电路和分频电路由恒压电路供电。恒压电路能够以可切换的方式输出第一恒定电压和第二恒定电压。第二恒定电压是等于或低于电池电压的电压。第一恒定电压是小于第二恒定电压的电压。在输出电动机驱动脉冲的期间，将恒定电压切换到第二恒定电压。

95. 发明申请

US20140325300A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20140325300A1
公开(公告)日：2014-10-30
申请号：US14256444
申请日：2014-04-18
申请人： Seiko Instruments Inc.
发明人： Tomohiro OKA
IPC分类号： G01R31/3177
CPC分类号： G01R31/3177 , G01R31/31701 , G01R31/31703
摘要： Provided is a semiconductor device including a test mode circuit capable of changing the semiconductor device into a test mode with fewer malfunctions and without providing a test terminal. The semiconductor device includes a test circuit configured to compare data of a data input terminal and a data output terminal in synchronization with clock, and control whether or not to change the semiconductor device into a test mode in accordance with a result of the comparison.
摘要翻译：提供了一种半导体器件，其包括能够将半导体器件改变成具有较少故障的测试模式并且不提供测试终端的测试模式电路。半导体器件包括测试电路，其被配置为与时钟同步地比较数据输入端子和数据输出端子的数据，并根据比较结果控制是否将半导体器件改变为测试模式。

96. 发明授权

US08872490B2 Voltage regulator 有权
标题翻译：电压调节器
公开(公告)号：US08872490B2
公开(公告)日：2014-10-28
申请号：US13784104
申请日：2013-03-04
申请人： Seiko Instruments Inc.
发明人： Kiyoshi Yoshikawa , Osamu Uehara
IPC分类号： G05F1/46 , G05F1/569
CPC分类号： G06F1/189 , G05F1/573 , Y10S323/901 , Y10S323/908
摘要： Provided is a voltage regulator which includes an inrush current prevention circuit so that no current is consumed after the start-up of the voltage regulator. A start-up circuit of the voltage regulator includes: a constant current circuit; a first transistor connected between the constant current circuit and a constant voltage generation circuit; a second transistor including a drain connected to a gate of the first transistor, and a gate to which a voltage based on an output voltage is input; a first depletion transistor including a gate connected to the drain of the second transistor, and a source connected to a source of the second transistor; and a third transistor including a gate connected to the gate of the second transistor, and a drain connected to the drain of the second transistor.
摘要翻译：提供了一种电压调节器，其包括浪涌电流防止电路，使得在电压调节器启动之后不消耗电流。电压调节器的启动电路包括：恒流电路; 连接在恒流电路和恒压发生电路之间的第一晶体管; 第二晶体管，包括连接到第一晶体管的栅极的漏极和输入基于输出电压的电压的栅极; 第一耗尽晶体管，包括连接到第二晶体管的漏极的栅极和连接到第二晶体管的源极的源极; 以及第三晶体管，其包括连接到所述第二晶体管的栅极的栅极，以及连接到所述第二晶体管的漏极的漏极。

97. 发明授权

US08859369B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08859369B2
公开(公告)日：2014-10-14
申请号：US13761304
申请日：2013-02-07
申请人： Seiko Instruments Inc.
发明人： Yukimasa Minami
IPC分类号： H01L29/66 , H01L29/78
CPC分类号： H01L29/7813 , H01L21/26586 , H01L29/0623 , H01L29/0634 , H01L29/0878 , H01L29/0886 , H01L29/66734 , H01L29/7809
摘要： Provided is a semiconductor device having a vertical MOS transistor and a method of manufacturing the same. The vertical MOS transistor has a trench gate, a distance between a gate electrode and an N-type high concentration buried layer below the gate electrode is formed longer than that in the conventional structure, and a P-type trench bottom surface lower region (5) is formed therebetween. In this manner, when a high voltage is applied to a drain region and 0 V is applied to the gate electrode, the trench bottom surface lower region (5) is depleted, thereby increasing the breakdown voltage in the OFF state.
摘要翻译：提供一种具有垂直MOS晶体管的半导体器件及其制造方法。垂直MOS晶体管具有沟槽栅极，栅极电极和栅电极下方的N型高浓度掩埋层之间的距离比常规结构形成得更长，并且P型沟槽底面下部区域（5 ）。以这种方式，当向漏极区域施加高电压并且向栅电极施加0V时，沟槽底表面下部区域（5）被耗尽，从而在断开状态下增加击穿电压。

98. 发明授权

US08842504B2 Near-field light head and information recording/reproducing device 有权
标题翻译：近场光头和信息记录/再现装置
公开(公告)号：US08842504B2
公开(公告)日：2014-09-23
申请号：US12668076
申请日：2008-07-10
申请人： Masakazu Hirata , Manabu Oumi , Majung Park
发明人： Masakazu Hirata , Manabu Oumi , Majung Park
IPC分类号： G11B5/02 , G11B5/60 , G11B5/48 , G11B5/31 , G11B5/00
CPC分类号： G11B5/314 , G11B5/02 , G11B5/4866 , G11B5/6088 , G11B2005/001 , G11B2005/0021
摘要： A near-field light head of the present invention includes: a slider disposed opposite to a surface of the magnetic recording medium; a recording element that includes a main magnetic pole generating the recording magnetic field and a subsidiary magnetic pole, the recording element being fixed to an apical surface of the slider so that the main magnetic pole and the subsidiary magnetic pole line up in a longitudinal direction of the slider in the state where the subsidiary magnetic pole is located at the apical surface of the slider; a near-field light generating element, fixed adjacently to the main magnetic pole in a state where another end side thereof is directed to the magnetic recording medium, that propagates the light flux introduced from one end side thereof toward the other end side to generate the near-field light, and radiates the near-field light from the other end side to the outside; and a light flux introducing device, fixed to the slider, that introduces the light flux from the one end side into the near-field light generating element. The near-field light generating element includes an inclined surface, which is inclined with respect to an optical axis of the light flux propagated through the inside thereof and is opposite to the main magnetic pole, in the other end side. A metallic film that increases light intensity of the near-field light to be increased is formed in the inclined surface.
摘要翻译：本发明的近场光头包括：与磁记录介质的表面相对设置的滑块; 记录元件，其包括产生记录磁场的主磁极和辅助磁极，所述记录元件固定到所述滑块的顶面，使得所述主磁极和所述辅助磁极线在纵向方向上向上所述滑块在所述辅助磁极位于所述滑块的顶面的状态下; 近场光产生元件，其在另一端侧被引导到磁记录介质的状态下相对于主磁极固定，将从其一端侧引入的光束向另一端侧传播，以产生近场光，并将来自另一端侧的近场光辐射到外部; 以及固定到滑块的光束引入装置，其将来自一端侧的光通量引入近场光产生元件。近场光产生元件包括在另一端侧相对于在其内部传播并与主磁极相对的光束的光轴倾斜的倾斜表面。在倾斜表面中形成增加增加的近场光的光强度的金属膜。

99. 发明申请

US20140269228A1 METAL STRUCTURE, METHOD OF MANUFACTURING METAL STRUCTURE, SPRING COMPONENT, CHRONOGRAPH COUPLING LEVER FOR TIMEPIECE, AND TIMEPIECE 有权
标题翻译：金属结构，制造金属结构的方法，弹簧部件，用于TIMEPIECE的CHRONOGRAPH联轴器和TIMEPIECE
公开(公告)号：US20140269228A1
公开(公告)日：2014-09-18
申请号：US14204150
申请日：2014-03-11
申请人： SEIKO INSTRUMENTS INC.
发明人： Miei KONISHI , Matsuo KISHI , Takashi NIWA
IPC分类号： G04B17/06 , C22C19/03 , C22F1/10
CPC分类号： G04B17/066 , C22C19/03 , C22F1/02 , C22F1/10 , C25D3/56 , C25D3/562 , G04B11/00 , G04F7/0842
摘要： A metal structure includes, by mass %, Fe: 10% to 30%; S: 0.005% to 0.2%; and the balance consisting of Ni and unavoidable impurities, in which a maximum grain size of the metal structure is 500 nm or less.
摘要翻译：金属结构以质量％计含有Fe：10〜30％， S：0.005〜0.2％; 余量由Ni和不可避免的杂质组成，其中金属结构的最大晶粒尺寸为500nm以下。

100. 发明申请

US20140266368A1 LIGHT RECEIVING CIRCUIT 有权
标题翻译：光接收电路
公开(公告)号：US20140266368A1
公开(公告)日：2014-09-18
申请号：US14213389
申请日：2014-03-14
申请人： Seiko Instruments Inc.
发明人： Fumiyasu UTSUNOMIYA
IPC分类号： H03K5/153
CPC分类号： H03K5/153 , H04B10/1141
摘要： The light receiving circuit includes: a photoelectric conversion element for causing a current corresponding to an amount of incident light to flow; a MOS transistor including a source connected to the photoelectric conversion element and a drain connected to a node, for causing the current of the photoelectric conversion element to flow to the node while maintaining a voltage of the source to a first voltage; a reset circuit for causing a current to flow from the node to a GND terminal so that a voltage of the node becomes a second voltage lower than the first voltage; a control circuit for outputting a reset signal to the reset circuit; and a voltage increase detection circuit for detecting a fluctuation in the voltage of the node and outputting a detection result.
摘要翻译：光接收电路包括：用于使与入射光量对应的电流流动的光电转换元件; MOS晶体管，其包括连接到所述光电转换元件的源极和连接到节点的漏极，用于使所述光电转换元件的电流流到所述节点，同时将所述源极的电压保持为第一电压; 用于使电流从节点流向GND端子的复位电路，使得节点的电压变为低于第一电压的第二电压; 用于向复位电路输出复位信号的控制电路; 以及电压增加检测电路，用于检测节点的电压的波动并输出检测结果。

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