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    • 91. 发明申请
    • TRANSFLECTIVE TYPE LIQUID CRYSTAL DISPLAY DEVICE
    • 转移型液晶显示装置
    • US20110187972A1
    • 2011-08-04
    • US13044228
    • 2011-03-09
    • Ku Hyun ParkJong Hwae LeeHyun Ho Kim
    • Ku Hyun ParkJong Hwae LeeHyun Ho Kim
    • G02F1/1335
    • G02F1/133555G02F1/1343
    • A transflective liquid crystal display device includes a first substrate, a second substrate, a liquid crystal layer, and a pixel electrode. The first substrate has a thin film transistor and the second substrate has a color filter and faces the first substrate. The liquid crystal layer is disposed between the first and the second substrates. The pixel electrode is disposed above the first substrate and electrically connected to the thin film transistor. The transflective liquid crystal display device further includes a pixel region. The pixel region is divided into a transmit part and a reflective part, and the reflective part includes a first region and a second region. The pixel electrode extends to the transmit part and only the second region of the reflective part.
    • 半透射型液晶显示装置包括第一基板,第二基板,液晶层和像素电极。 第一衬底具有薄膜晶体管,第二衬底具有滤色器并面向第一衬底。 液晶层设置在第一和第二基板之间。 像素电极设置在第一基板上并电连接到薄膜晶体管。 半透射型液晶显示装置还包括像素区域。 像素区域被分成发射部分和反射部分,并且反射部分包括第一区域和第二区域。 像素电极延伸到发射部分,仅延伸到反射部分的第二区域。
    • 92. 发明授权
    • Condenser microphone employing wide band stop filter and having improved resistance to electrostatic discharge
    • 采用宽带阻滤波器的冷凝器麦克风具有改进的静电放电阻力
    • US07894616B2
    • 2011-02-22
    • US10550170
    • 2003-06-10
    • Chung Dam SongEek Joo ChungHyun Ho Kim
    • Chung Dam SongEek Joo ChungHyun Ho Kim
    • H04R3/00H04R25/00H03F99/00
    • H04R19/04H04R3/007
    • A condenser microphone employs a wide band stop filter, having improved resistance to electrostatic discharge. This includes providing a condenser microphone used for a multi-band by comprising a wide band stop filter capable of efficiently blocking a wide band signal including low frequency and radio frequency used in a mobile communication. A condenser microphone includes: an acoustic module for converting sound pressure into an electric signal; an FET for amplifying the electric signal; and a wide band stop filter for blocking a wide band signal including low frequency and radio frequency output from the FET. The filter is realized by resistors and/or capacitors which are connected selectively according to the radio frequency band between the drain and the source of the FET. The range capable of removing EM noise is widened, an excellent filtering effect of noise is obtained, and resistance of electrostatic discharge applied from outside is improved.
    • 电容麦克风采用宽带阻滤波器,具有改进的抗静电放电性能。 这包括提供一种用于多频带的电容式麦克风,其包括能够有效地阻挡包括在移动通信中使用的低频和射频的宽带信号的宽带阻止滤波器。 电容麦克风包括:用于将声压转换成电信号的声学模块; 用于放大电信号的FET; 以及用于阻挡包括从FET输出的低频和射频的宽带信号的宽带阻带滤波器。 滤波器由根据FET的漏极和源极之间的射频频率选择性地连接的电阻器和/或电容器来实现。 能够消除EM噪声的范围变宽,可以获得良好的噪声滤波效果,提高了从外部施加的静电放电电阻。
    • 94. 发明申请
    • THIN FILM TRANSISTOR SUBSTRATE AND FABRICATING METHOD THEREOF
    • 薄膜晶体管基板及其制造方法
    • US20100327283A1
    • 2010-12-30
    • US12879949
    • 2010-09-10
    • Hyun-Ho KIM
    • Hyun-Ho KIM
    • H01L29/786
    • G02F1/136227G02F1/133553H01L27/124H01L27/1288
    • The present invention relates to a thin film transistor substrate. The thin film transistor according to one embodiment of the present invention comprises: a gate wire and a data wire formed to cross each other on an insulating substrate and define a pixel area; a thin film transistor formed on the intersection of the gate wire and the data wire; an inorganic insulating layer covering the thin film transistor and having a surface that a prominence and depression pattern formed on; and a reflective layer provided on the prominence and depression pattern. Thus, the present invention provides a thin film transistor substrate which reduces the time required in the process and enhance the productivity.
    • 本发明涉及一种薄膜晶体管基板。 根据本发明的一个实施例的薄膜晶体管包括:栅极线和数据线,其形成为在绝缘基板上彼此交叉并限定像素区域; 形成在栅极线和数据线的交点上的薄膜晶体管; 覆盖薄膜晶体管并具有形成在其上的突起和凹陷图案的表面的无机绝缘层; 以及设置在突出和凹陷图案上的反射层。 因此,本发明提供一种薄膜晶体管基板,其减少了该工艺所需的时间并提高了生产率。
    • 100. 发明申请
    • THIN FILM TRANSISTOR SUBSTRATE AND FABRICATING METHOD THEREOF
    • 薄膜晶体管基板及其制造方法
    • US20080157085A1
    • 2008-07-03
    • US11964600
    • 2007-12-26
    • Hyun-Ho Kim
    • Hyun-Ho Kim
    • H01L29/04H01L21/336
    • G02F1/136227G02F1/133553H01L27/124H01L27/1288
    • The present invention relates to a thin film transistor substrate and a fabricating method thereof. The thin film transistor according to one embodiment of the present invention comprises: a gate wire and a data wire formed to cross each other on an insulating substrate and define a pixel area; a thin film transistor formed on the intersection of the gate wire and the data wire; an inorganic insulating layer covering the thin film transistor and having a surface that a prominence and depression pattern formed on; and a reflective layer provided on the prominence and depression pattern. Thus, the present invention provides a thin film transistor substrate and a fabricating method thereof, which reduce the time required in the process and enhance the productivity.
    • 薄膜晶体管基板及其制造方法技术领域本发明涉及薄膜晶体管基板及其制造方法。 根据本发明的一个实施例的薄膜晶体管包括:栅极线和数据线,其形成为在绝缘基板上彼此交叉并限定像素区域; 形成在栅极线和数据线的交点上的薄膜晶体管; 覆盖薄膜晶体管并具有形成在其上的突起和凹陷图案的表面的无机绝缘层; 以及设置在突出和凹陷图案上的反射层。 因此,本发明提供一种薄膜晶体管基板及其制造方法,其减少了工艺所需的时间并提高了生产率。