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91. 发明申请

US20170054034A1 VOLTAGE REGULATOR CIRCUIT 有权
标题翻译：电压调节器电路
公开(公告)号：US20170054034A1
公开(公告)日：2017-02-23
申请号：US15249570
申请日：2016-08-29
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei Yamazaki , Hiroyuki Miyake , Masashi Tsubuku , Kosei Noda
IPC分类号： H01L29/786 , H02M3/158 , H01L29/66 , H01L27/12 , H01L29/24
CPC分类号： H01L29/78696 , H01L21/84 , H01L27/105 , H01L27/1225 , H01L27/124 , H01L27/1255 , H01L29/24 , H01L29/66969 , H01L29/7869 , H02M3/073 , H02M3/158
摘要： A transistor includes a gate, a source, and a drain, the gate is electrically connected to the source or the drain, a first signal is input to one of the source and the drain, and an oxide semiconductor layer whose carrier concentration is 5×1014/cm3 or less is used for a channel formation layer. A capacitor includes a first electrode and a second electrode, the first electrode is electrically connected to the other of the source and the drain of the transistor, and a second signal which is a clock signal is input to the second electrode. A voltage of the first signal is stepped up or down to obtain a third signal which is output as an output signal through the other of the source and the drain of the transistor.
摘要翻译：晶体管包括栅极，源极和漏极，栅极电连接到源极或漏极，第一信号被输入到源极和漏极中的一个，以及载流子浓度为5× 1014 / cm3以下用于沟道形成层。电容器包括第一电极和第二电极，第一电极电连接到晶体管的源极和漏极中的另一个，并且作为时钟信号的第二信号被输入到第二电极。第一信号的电压被升高或降低以获得通过晶体管的源极和漏极中的另一个输出作为输出信号的第三信号。

92. 发明授权

US09564534B2 Transistor and display device using the same 有权
标题翻译：晶体管和显示器件使用相同
公开(公告)号：US09564534B2
公开(公告)日：2017-02-07
申请号：US14588657
申请日：2015-01-02
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Masashi Tsubuku , Kosei Noda
IPC分类号： H01L29/12 , H01L27/15 , H01L29/786 , H01L27/12
CPC分类号： H01L29/7869 , H01L27/1225 , H01L27/156
摘要： The band tail state and defects in the band gap are reduced as much as possible, whereby optical absorption of energy which is in the vicinity of the band gap or less than or equal to the band gap is reduced. In that case, not by merely optimizing conditions of manufacturing an oxide semiconductor film, but by making an oxide semiconductor to be a substantially intrinsic semiconductor or extremely close to an intrinsic semiconductor, defects on which irradiation light acts are reduced and the effect of light irradiation is reduced essentially. That is, even in the case where light with a wavelength of 350 nm is delivered at 1×1013 photons/cm2·sec, a channel region of a transistor is formed using an oxide semiconductor, in which the absolute value of the amount of the variation in the threshold voltage is less than or equal to 0.65 V.
摘要翻译：频带尾部状态和带隙中的缺陷尽可能地减小，由此减小了在带隙附近或小于或等于带隙的能量的光吸收。在这种情况下，不是仅通过优化氧化物半导体膜的制造条件，而是通过使氧化物半导体成为本质上的本征半导体，或者非常接近本征半导体，减少照射光的作用的缺陷和光照射基本上减少了。也就是说，即使在以1×1013个光子/ cm 2·sec传递波长为350nm的光的情况下，也可以使用氧化物半导体形成晶体管的沟道区域，其中，阈值电压的变化小于或等于0.65 V.

93. 发明申请

US20160247929A1 Semiconductor Device 有权
标题翻译：半导体器件
公开(公告)号：US20160247929A1
公开(公告)日：2016-08-25
申请号：US15050895
申请日：2016-02-23
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Kosei Noda
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , H01L27/1225 , H01L29/66818 , H01L29/78603 , H01L29/78696
摘要： To provide a transistor with favorable electrical characteristics. A semiconductor device includes a first insulator over a substrate; a first metal oxide over the first insulator; a second metal oxide over the first metal oxide; a first conductor and a second conductor over the second metal oxide; a third metal oxide over the second metal oxide, the first conductor, and the second conductor; a second insulator over the third metal oxide; and a third conductor over the second insulator. The second metal oxide includes a region in contact with a top surface of the first metal oxide and regions in contact with side surfaces of the first metal oxide. The second metal oxide includes channel formation regions.
摘要翻译：提供具有良好电气特性的晶体管。半导体器件包括在衬底上的第一绝缘体; 第一绝缘体上的第一金属氧化物; 第一金属氧化物上的第二金属氧化物; 在第二金属氧化物上的第一导体和第二导体; 第二金属氧化物上的第三金属氧化物，第一导体和第二导体; 在所述第三金属氧化物上的第二绝缘体; 以及在第二绝缘体上的第三导体。第二金属氧化物包括与第一金属氧化物的顶表面接触的区域和与第一金属氧化物的侧表面接触的区域。第二金属氧化物包括沟道形成区域。

94. 发明授权

US09368082B2 Liquid crystal display device and electronic device including the liquid crystal display device 有权
标题翻译：液晶显示装置和包括液晶显示装置的电子装置
公开(公告)号：US09368082B2
公开(公告)日：2016-06-14
申请号：US14477172
申请日：2014-09-04
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei Yamazaki , Ryo Arasawa , Jun Koyama , Masashi Tsubuku , Kosei Noda
IPC分类号： G09G3/36 , H01L27/12 , H01L29/786
CPC分类号： G09G3/3614 , G02F1/133553 , G02F1/13439 , G02F1/1368 , G02F2201/123 , G02F2202/10 , G09G3/3648 , G09G3/3677 , G09G2300/08 , G09G2310/0286 , G09G2310/08 , G09G2330/021 , H01L21/02164 , H01L21/02266 , H01L21/02565 , H01L21/02631 , H01L21/467 , H01L21/477 , H01L27/1225 , H01L27/1255 , H01L29/24 , H01L29/42356 , H01L29/45 , H01L29/66969 , H01L29/78648 , H01L29/7869
摘要： In a liquid crystal display device including a plurality of pixels in a display portion and configured to performed display in a plurality of frame periods, each of the frame periods includes a writing period and a holding period, and after an image signal is input to each of the plurality of pixels in the writing period, a transistor included in each of the plurality of pixels is turned off and the image signal is held for at least 30 seconds in the holding period. The pixel includes a semiconductor layer including an oxide semiconductor layer, and the oxide semiconductor layer has a carrier concentration of less than 1×1014/cm3.
摘要翻译：在包括显示部分中的多个像素并且被配置为在多个帧周期中进行显示的液晶显示装置中，每个帧周期包括写入周期和保持周期，并且在将图像信号输入到每个在所述写入周期中的所述多个像素中，包括在所述多个像素中的每一个中的晶体管被截止，并且所述图像信号在所述保持周期中保持至少30秒。像素包括具有氧化物半导体层的半导体层，氧化物半导体层的载流子浓度小于1×10 14 / cm 3。

95. 发明授权

US09299724B2 Analog circuit and semiconductor device 有权
公开(公告)号：US09299724B2
公开(公告)日：2016-03-29
申请号：US14339540
申请日：2014-07-24
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei Yamazaki , Jun Koyama , Atsushi Hirose , Masashi Tsubuku , Kosei Noda
IPC分类号： H01L25/00 , H01L27/12 , H01L29/786 , H01L33/02 , H04R1/02 , H01L29/36 , H01L21/8234
摘要： An object is to obtain a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range, using a thin film transistor in which an oxide semiconductor layer is used. An analog circuit is formed with the use of a thin film transistor including an oxide semiconductor which has a function as a channel formation layer, has a hydrogen concentration of 5×1019 atoms/cm3 or lower, and substantially functions as an insulator in the state where no electric field is generated. Thus, a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range can be obtained.

96. 发明授权

US09293601B2 Display device 有权
标题翻译：显示设备
公开(公告)号：US09293601B2
公开(公告)日：2016-03-22
申请号：US14732874
申请日：2015-06-08
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Shunpei Yamazaki , Hiroki Ohara , Toshinari Sasaki , Kosei Noda , Hideaki Kuwabara
IPC分类号： H01L29/786 , H01L27/12 , H01L29/51 , G02F1/1333 , G02F1/1337 , G02F1/1343 , G02F1/1362 , G02F1/1368
CPC分类号： H01L27/1225 , G02F1/133345 , G02F1/1337 , G02F1/134309 , G02F1/136227 , G02F1/136277 , G02F1/1368 , H01L27/1214 , H01L27/124 , H01L27/1248 , H01L29/24 , H01L29/517 , H01L29/78609 , H01L29/7869
摘要： An object is to provide a semiconductor device having a structure with which parasitic capacitance between wirings can be sufficiently reduced. An oxide insulating layer serving as a channel protective layer is formed over part of an oxide semiconductor layer overlapping with a gate electrode layer. In the same step as formation of the oxide insulating layer, an oxide insulating layer covering a peripheral portion of the oxide semiconductor layer is formed. The oxide insulating layer which covers the peripheral portion of the oxide semiconductor layer is provided to increase the distance between the gate electrode layer and a wiring layer formed above or in the periphery of the gate electrode layer, whereby parasitic capacitance is reduced.
摘要翻译：目的在于提供一种半导体器件，其具有可以充分降低布线之间的寄生电容的结构。用作沟道保护层的氧化物绝缘层形成在与栅电极层重叠的氧化物半导体层的一部分上。在与氧化物绝缘层的形成相同的步骤中，形成覆盖氧化物半导体层的周边部分的氧化物绝缘层。设置覆盖氧化物半导体层的周边部分的氧化物绝缘层以增加栅极电极层与形成在栅电极层的上方或周围的布线层之间的距离，从而降低寄生电容。

97. 发明授权

US09224870B2 Oxide semiconductor device 有权
标题翻译：氧化物半导体器件
公开(公告)号：US09224870B2
公开(公告)日：2015-12-29
申请号：US14472618
申请日：2014-08-29
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei Yamazaki , Hiroki Ohara , Toshinari Sasaki , Kosei Noda , Hideaki Kuwabara
IPC分类号： H01L29/786 , H01L27/12 , H01L29/51
CPC分类号： H01L27/1225 , G02F1/133345 , G02F1/1337 , G02F1/134309 , G02F1/136227 , G02F1/136277 , G02F1/1368 , H01L27/1214 , H01L27/124 , H01L27/1248 , H01L29/24 , H01L29/517 , H01L29/78609 , H01L29/7869
摘要： An object is to provide a semiconductor device having a structure with which parasitic capacitance between wirings can be sufficiently reduced. An oxide insulating layer serving as a channel protective layer is formed over part of an oxide semiconductor layer overlapping with a gate electrode layer. In the same step as formation of the oxide insulating layer, an oxide insulating layer covering a peripheral portion of the oxide semiconductor layer is formed. The oxide insulating layer which covers the peripheral portion of the oxide semiconductor layer is provided to increase the distance between the gate electrode layer and a wiring layer formed above or in the periphery of the gate electrode layer, whereby parasitic capacitance is reduced.
摘要翻译：目的在于提供一种半导体器件，其具有可以充分降低布线之间的寄生电容的结构。用作沟道保护层的氧化物绝缘层形成在与栅电极层重叠的氧化物半导体层的一部分上。在与氧化物绝缘层的形成相同的步骤中，形成覆盖氧化物半导体层的周边部分的氧化物绝缘层。设置覆盖氧化物半导体层的周边部分的氧化物绝缘层以增加栅极电极层与形成在栅电极层的上方或周围的布线层之间的距离，从而降低寄生电容。

98. 发明授权

US09130041B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US09130041B2
公开(公告)日：2015-09-08
申请号：US13870027
申请日：2013-04-25
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei Yamazaki , Junichiro Sakata , Kosei Noda , Masayuki Sakakura , Yoshiaki Oikawa , Hotaka Maruyama
IPC分类号： H01L21/00 , H01L29/786 , H01L27/12 , H01L29/66 , H01L23/532
CPC分类号： H01L29/78606 , H01L23/5329 , H01L27/1225 , H01L29/24 , H01L29/66742 , H01L29/66969 , H01L29/7869 , H01L2924/0002 , H01L2924/00
摘要： It is an object to manufacture a highly reliable semiconductor device including a thin film transistor whose electric characteristics are stable. An insulating layer which covers an oxide semiconductor layer of the thin film transistor contains a boron element or an aluminum element. The insulating layer containing a boron element or an aluminum element is formed by a sputtering method using a silicon target or a silicon oxide target containing a boron element or an aluminum element. Alternatively, an insulating layer containing an antimony (Sb) element or a phosphorus (P) element instead of a boron element covers the oxide semiconductor layer of the thin film transistor.
摘要翻译：本发明的目的是制造具有电特性稳定的薄膜晶体管的高可靠性的半导体器件。覆盖薄膜晶体管的氧化物半导体层的绝缘层包含硼元素或铝元素。通过使用含有硼元素或铝元素的硅靶或氧化硅靶的溅射法形成含有硼元素或铝元素的绝缘层。或者，代替硼元素的含有锑（Sb）元素或磷（P）元素的绝缘层覆盖薄膜晶体管的氧化物半导体层。

99. 发明授权

US09123692B2 Semiconductor device and method of manufacturing semiconductor device 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US09123692B2
公开(公告)日：2015-09-01
申请号：US13668454
申请日：2012-11-05
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Kosei Noda , Yuta Endo
IPC分类号： H01L29/10 , H01L29/417 , H01L29/45 , H01L29/786 , H01L29/66
CPC分类号： H01L29/41733 , H01L29/45 , H01L29/66969 , H01L29/78603 , H01L29/78618 , H01L29/78636 , H01L29/7869
摘要： By reducing the contact resistance between an oxide semiconductor film and a metal film, a transistor that uses an oxide semiconductor film and has excellent on-state characteristics is provided. A semiconductor device includes a pair of electrodes over an insulating surface; an oxide semiconductor film in contact with the pair of electrodes; a gate insulating film over the oxide semiconductor film; and a gate electrode overlapping with the oxide semiconductor film with the gate insulating film interposed therebetween. In the semiconductor device, the pair of electrodes contains a halogen element in a region in contact with the oxide semiconductor film. Further, plasma treatment in an atmosphere containing fluorine can be performed so that the pair of electrodes contains the halogen element in a region in contact with the oxide semiconductor film.
摘要翻译：通过降低氧化物半导体膜和金属膜之间的接触电阻，提供了使用氧化物半导体膜并且具有优异的导通状态特性的晶体管。半导体器件包括绝缘表面上的一对电极; 与所述一对电极接触的氧化物半导体膜; 氧化物半导体膜上的栅极绝缘膜; 以及与氧化物半导体膜重叠的栅电极，其间具有栅极绝缘膜。在半导体器件中，该对电极在与氧化物半导体膜接触的区域中含有卤素元素。此外，可以在含氟气氛中进行等离子体处理，使得该对电极在与氧化物半导体膜接触的区域中含有卤素元素。

100. 发明申请

US20150187951A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20150187951A1
公开(公告)日：2015-07-02
申请号：US14580590
申请日：2014-12-23
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Yuta Endo , Kosei Noda
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , H01L27/088 , H01L29/16 , H01L29/78648 , H01L29/78696
摘要： To provide a transistor with stable electric characteristics, provide a transistor having a small current in a non-conductive state, provide a transistor having a large current in a conductive state, provide a semiconductor device including the transistor, or provide a durable semiconductor device, a semiconductor device includes a first insulator containing excess oxygen, a semiconductor over the first insulator, a second insulator over the semiconductor, and a conductor having a region overlapping with the semiconductor with the second insulator provided therebetween. A region containing boron or phosphorus is located between the first insulator and the semiconductor.
摘要翻译：为了提供具有稳定电特性的晶体管，提供具有非导通状态的小电流的晶体管，提供具有导通状态的大电流的晶体管，提供包括晶体管的半导体器件，或提供耐用的半导体器件，半导体器件包括含有过量氧的第一绝缘体，在第一绝缘体上的半导体，半导体上的第二绝缘体，以及具有与半导体重叠的区域的导体，其间设置有第二绝缘体。含有硼或磷的区域位于第一绝缘体和半导体之间。

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