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1. 发明授权

US11626037B2 Semiconductor device and display device 有权
公开(公告)号：US11626037B2
公开(公告)日：2023-04-11
申请号：US16634955
申请日：2018-07-27
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei Yamazaki , Yukinori Shima , Masami Jintyou
IPC分类号： H01L29/786 , G09F9/30 , H01L51/50 , H01L27/32
摘要： A semiconductor device that can be highly integrated is provided.
The semiconductor device includes a semiconductor layer, a first insulating layer, a second insulating layer, a third insulating layer, and a first conductive layer. The third insulating layer is positioned over the semiconductor layer and includes a first opening over the semiconductor layer. The first conductive layer is positioned over the semiconductor layer, the first insulating layer is positioned between the first conductive layer and the semiconductor layer, and the second insulating layer is provided in a position that is in contact with a side surface of the first opening, the semiconductor layer, and the first insulating layer. The semiconductor layer includes a first portion overlapping with the first insulating layer, a pair of second portions between which the first portion is sandwiched and which overlap with the second insulating layer, and a pair of third portions between which the first portion and the pair of second portions are sandwiched and which overlap with neither the first insulating layer nor the second insulating layer. The first portion has a smaller width than the first opening and has a thinner shape of the semiconductor layer than the second portions, and the second portions have a thinner shape of the semiconductor layer than the third portions.

2. 发明授权

US11610997B2 Semiconductor material and semiconductor device having a metal element and nitrogen 有权
公开(公告)号：US11610997B2
公开(公告)日：2023-03-21
申请号：US16759020
申请日：2018-11-15
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei Yamazaki , Shota Sambonsuge , Yasumasa Yamane , Yuta Endo , Naoki Okuno
IPC分类号： H01L29/786 , H01L27/108 , H01L29/22
摘要： A semiconductor material is an oxide including a metal element and nitrogen, in which the metal element is indium (In), an element M (M is aluminum (Al), gallium (Ga), yttrium (Y), or tin (Sn)), and zinc (Zn) and nitrogen is taken into an oxygen vacancy or bonded to an atom of the metal element.

3. 发明授权

US11610918B2 Display device 有权
公开(公告)号：US11610918B2
公开(公告)日：2023-03-21
申请号：US16704462
申请日：2019-12-05
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei Yamazaki , Kengo Akimoto , Shigeki Komori , Hideki Uochi , Rihito Wada , Yoko Chiba
IPC分类号： H01L27/12 , H01L29/417 , G02F1/1339 , G02F1/1345 , H01L29/786 , H01L29/66 , H01L27/32 , H01L29/04 , H01L29/24 , H01L51/52
摘要： A display device includes a pixel portion in which a pixel electrode layer is arranged in a matrix, and an inverted staggered thin film transistor having a combination of at least two kinds of oxide semiconductor layers with different amounts of oxygen is provided corresponding to the pixel electrode layer. In the periphery of the pixel portion in this display device, a pad portion is provided to be electrically connected to a common electrode layer formed on a counter substrate through a conductive layer made of the same material as the pixel electrode layer. One objection of our invention to prevent a defect due to separation of a thin film in various kinds of display devices is realized, by providing a structure suitable for a pad portion provided in a display panel.

4. 发明授权

US11610877B2 Functional panel, display device, input/output device, and data processing device 有权
公开(公告)号：US11610877B2
公开(公告)日：2023-03-21
申请号：US17098484
申请日：2020-11-16
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei Yamazaki , Hajime Kimura
IPC分类号： H01L25/18 , G09G3/32 , G09G3/20
摘要： A novel functional panel that is highly convenient or reliable is provided. The functional panel includes a light-emitting region including a first element, a first functional layer, and a second functional layer. The first element includes a first electrode, a second electrode, and a layer containing a light-emitting material. The layer containing a light-emitting material contains gallium nitride. The first functional layer includes a region positioned between the light-emitting region and the second functional layer, and includes a first insulating film. The first insulating film includes a first opening and a second opening on the outside of the light-emitting region. The second functional layer includes a driver circuit. The driver circuit includes a first transistor and a second transistor. The first transistor is electrically connected to the first electrode through the first opening, and the second transistor is electrically connected to the second electrode through the second opening.

5. 发明授权

US11610544B2 Touch panel system, electronic device, and semiconductor device having a neural network 有权
公开(公告)号：US11610544B2
公开(公告)日：2023-03-21
申请号：US17546696
申请日：2021-12-09
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Shintaro Harada , Yoshiyuki Kurokawa , Takeshi Aoki , Yuki Okamoto , Hiroki Inoue , Koji Kusunoki , Yosuke Tsukamoto , Katsuki Yanagawa , Kei Takahashi , Shunpei Yamazaki
IPC分类号： G09G3/3225 , G06F1/16 , G06F3/041 , G06N3/04 , G06N3/08 , G09G5/22 , G06V30/32 , G09G3/36
摘要： An electronic device capable of efficiently recognizing a handwritten character is provided.
The electronic device includes a first circuit, a display portion, and a touch sensor. The first circuit includes a neural network. The display portion includes a flexible display. The touch sensor has the function of outputting an input handwritten character as image information to the first circuit. The first circuit has the function of analyzing the image information and converting the image information into character information, and a function of displaying an image including the character information on the display portion. The analysis is performed by inference through the use of the neural network.

6. 发明授权

US11609613B2 Display device 有权
公开(公告)号：US11609613B2
公开(公告)日：2023-03-21
申请号：US17585680
申请日：2022-01-27
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Yoshiharu Hirakata , Hiroyuki Miyake , Seiko Inoue , Shunpei Yamazaki
IPC分类号： G06F3/041 , G06F1/16
摘要： A display device with low power consumption is provided. Furthermore, a display device in which an image is displayed in a region that can be used in a folded state is provided. The conceived display device includes a display portion that can be opened and folded, a sensing portion that senses a folded state of the display portion, and an image processing portion that generates, when the display portion is in the folded state, an image in which a black image is displayed in part of the display portion.

7. 发明授权

US11600645B2 Imaging device, operation method thereof, and electronic device 有权
公开(公告)号：US11600645B2
公开(公告)日：2023-03-07
申请号：US17057526
申请日：2019-06-11
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Seiichi Yoneda , Hidetomo Kobayashi , Takashi Nakagawa , Yusuke Negoro , Shunpei Yamazaki
IPC分类号： H01L27/146 , H04N5/369 , H04N5/353 , H04N5/378 , H04N5/3745
摘要： An imaging device that can obtain imaging data corresponding to high-resolution images in a short period of time is provided. The imaging device includes a pixel including a photoelectric conversion element and n (n is an integer more than 2 inclusive) retention circuits. The photoelectric conversion element and the n retention circuits are stacked. One electrode of the photoelectric conversion element is electrically connected to the first to n-th retention circuits. The retention circuits include OS transistors with an extremely low off-state current feature, and can retain imaging data for a long time. In the first to n-th periods, the imaging device obtains the first to n-th imaging data and retains it in the first to n-th retention circuits. Then, the first to n-th imaging data retained in the first to n-th retention circuits are read out. The read imaging data is output outside the imaging data through AD conversion.

8. 发明授权

US11600489B2 Semiconductor device and method for manufacturing the semiconductor device 有权
公开(公告)号：US11600489B2
公开(公告)日：2023-03-07
申请号：US16972413
申请日：2019-05-31
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Shunpei Yamazaki , Tetsuya Kakehata , Yuji Egi , Yasuhiro Jinbo , Yujiro Sakurada
IPC分类号： H01L21/02 , H01L29/786 , H01L29/51 , H01L21/8234
摘要： A semiconductor device having favorable electrical characteristics is provided. A metal oxide is formed over a substrate by the steps of: introducing a first precursor into a chamber in which the substrate is provided; introducing a first oxidizer after the introduction of the first precursor; introducing a second precursor after the introduction of the first oxidizer; and introducing a second oxidizer after the introduction of the second precursor.

9. 发明授权

US11594752B2 Secondary battery and a method for fabricating the same 有权
公开(公告)号：US11594752B2
公开(公告)日：2023-02-28
申请号：US17315766
申请日：2021-05-10
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Shunpei Yamazaki , Minoru Takahashi
IPC分类号： H01M10/0525 , H01M4/62 , H01M4/04 , H01M4/139 , H01M4/13 , H01M4/36 , H01M10/058
摘要： The adhesion between metal foil serving as a current collector and a negative electrode active material is increased to enable long-term reliability. An electrode active material layer (including a negative electrode active material or a positive electrode active material) is formed over a base, a metal film is formed over the electrode active material layer by sputtering, and then the base and the electrode active material layer are separated at the interface therebetween; thus, an electrode is formed. The electrode active material particles in contact with the metal film are bonded by being covered with the metal film formed by the sputtering. The electrode active material is used for at least one of a pair of electrodes (a negative electrode or a positive electrode) in a lithium-ion secondary battery.

10. 发明授权

US11588058B2 Semiconductor device and manufacturing method thereof 有权
公开(公告)号：US11588058B2
公开(公告)日：2023-02-21
申请号：US17308658
申请日：2021-05-05
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei Yamazaki , Satoshi Shinohara
IPC分类号： H01L29/786 , H01L29/04 , H01L29/24
摘要： Provided are a transistor which has electrical characteristics requisite for its purpose and uses an oxide semiconductor layer and a semiconductor device including the transistor. In the bottom-gate transistor in which at least a gate electrode layer, a gate insulating film, and the semiconductor layer are stacked in this order, an oxide semiconductor stacked layer including at least two oxide semiconductor layers whose energy gaps are different from each other is used as the semiconductor layer. Oxygen and/or a dopant may be added to the oxide semiconductor stacked layer.

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