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    • 93. 发明授权
    • Real-time semiconductor radiation detector
    • 实时半导体辐射探测器
    • US5589705A
    • 1996-12-31
    • US417141
    • 1995-03-17
    • Yutaka SaitoYoshikazu Kojima
    • Yutaka SaitoYoshikazu Kojima
    • H01L27/14H01L27/146H01L31/10H01L31/00
    • H01L27/14658H01L27/14643H01L27/14681
    • Semiconductor radial rays detector is provided that improves a breakdown voltage yield of a gate insulating film of a semiconductor radial rays detector and prevents an increase in resistance of a gate electrode caused by the improvement in the breakdown voltage yield. In the inventive semiconductor radial rays detector, material used as a gate electrode 1 of a reading condenser is not an Al film (aluminum film) but a POLY Si film (a polycrystalline silicon film), or silicide or metal including silicide with a high melting point such as WSi (tungsten silicide) (strictly its composition is indefinite as expressed as W.sub.x Si.sub.y) or TiSi (titan silicide) (expressed as Ti.sub.x Si, in the same manner). Further, a contact hole 2 is provided on the gate electrode 1 through an inter-insulating film 4 as the inter-insulating film for wiring, and an Al electrode 3 coupled to an output terminal is provided over the contact hole.
    • 提供半导体径向射线检测器,其提高半导体径向射线检测器的栅极绝缘膜的击穿电压产生,并且防止由于击穿电压产量的提高而引起的栅电极的电阻增加。 在本发明的半导体径向射线检测器中,用作读取冷凝器的栅电极1的材料不是Al膜(铝膜),而是POLY Si膜(多晶硅膜),或者包含高熔点的硅化物的硅化物或金属 (硅化钨)(严格地说,其组成如WxSiy所表示的不定)或TiSi(钛硅化物)(以相同的方式表示为TixSi)。 此外,通过作为布线用绝缘膜的绝缘膜4在栅电极1上设置接触孔2,并且在接触孔上设置与输出端子连接的Al电极3。
    • 94. 发明授权
    • Semiconductor integrated circuit device with electrostatic damage
protection
    • 半导体集成电路器件具有静电损伤保护
    • US5486716A
    • 1996-01-23
    • US880720
    • 1992-05-08
    • Yutaka SaitoJun OsanaiYoshikazu KojimaMasaaki Kamiya
    • Yutaka SaitoJun OsanaiYoshikazu KojimaMasaaki Kamiya
    • H01L21/8238H01L21/336H01L21/822H01L21/8234H01L27/02H01L27/04H01L27/088H01L27/092H01L29/78H01L23/62
    • H01L27/0266H01L2924/0002
    • A semiconductor integrated circuit device has a peripheral transistor having a strengthened ESD resistance for external connection. The peripheral transistor has a channel structure effective to release an electrostatic stress current more efficiently than an internal transistor of the semiconductor integrated circuit. In one embodiment, the peripheral transistor has a channel portion that is shorter than the channel portion of an internal transistor. In another embodiment, the peripheral transistor has a substrate contact, a ground line, and an additional resistor interconnection between them to efficiently release an electrostatic stress current. In another embodiment, the peripheral transistor has an asymmetric channel structure so that the distance between the source contact and the gate electrode is set shorter than the distance between the drain contact and the gate electrode. In another embodiment, the peripheral transistor has a drain region and a gate insulating film having a portion of the insulating film that is thinner than the rest of the gate insulating film. In another embodiment, a gate contact is electrically connected between a gate electrode and a metal gate line of the peripheral transistor to reduce a resistance therebetween. In another embodiment, the peripheral transistor has a transistor breakdown voltage that is smaller than a gate breakdown voltage to efficiently release electrostatic stress current.
    • 半导体集成电路器件具有用于外部连接的具有增强的ESD电阻的外围晶体管。 外围晶体管具有有效地比半导体集成电路的内部晶体管更有效地释放静电应力电流的沟道结构。 在一个实施例中,外围晶体管具有比内部晶体管的沟道部分短的沟道部分。 在另一个实施例中,外围晶体管具有衬底接触,接地线和它们之间的附加电阻器互连,以有效地释放静电应力电流。 在另一个实施例中,外围晶体管具有非对称沟道结构,使得源极接触和栅电极之间的距离被设定为短于漏极接触和栅电极之间的距离。 在另一个实施例中,外围晶体管具有漏极区域和栅极绝缘膜,其绝缘膜的一部分比栅极绝缘膜的其余部分薄。 在另一个实施例中,栅极接触电连接在外围晶体管的栅电极和金属栅极线之间以减小它们之间的电阻。 在另一个实施例中,外围晶体管具有小于栅极击穿电压的晶体管击穿电压,以有效地释放静电应力电流。
    • 95. 发明授权
    • Measuring apparatus
    • 测量装置
    • US5316727A
    • 1994-05-31
    • US936079
    • 1992-08-28
    • Yoshiro SuzukiHitoshi TanakaNoriyuki KuriharaYutaka Saito
    • Yoshiro SuzukiHitoshi TanakaNoriyuki KuriharaYutaka Saito
    • G01N21/01G01N21/27G01N21/78G01N21/86
    • G01N21/8483G01N21/272G01N2021/478G01N21/78G01N2201/0256G01N2201/1241G01N2201/126
    • A measuring apparatus of the present invention measures the constituent concentration of a specimen after loading into the apparatus a test piece having a test material which develops coloring as a result of a reaction with the constituents of a specimen. When the apparatus detects that the test piece having the test material has been loaded, it automatically begins to measure the constituent concentration of the specimen. That is, after the loading of the test piece is detected, a predetermined time period is measured. During this time measurement, the time period is displayed at a predetermined time interval. After the time measurement of this predetermined time period is terminated, the test material is irradiated with a light, and the intensity of the light from the test material is detected. The constituent concentration of the specimen applied to the test material can be determined on the basis of the reflected light intensity thus detected. Furthermore, this measuring apparatus can detect a reverse insertion of a test piece, and is constructed so as to disable the measurement of the constituent concentration of a specimen if supplementary information to be stored along with measurement information has not been set.
    • 本发明的测量装置测量在装入装置之后的样品的成分浓度,该试片具有由于与试样的组分的反应而产生着色的试验材料。 当设备检测到具有测试材料的测试件已经被加载时,其自动开始测量样品的组分浓度。 也就是说,在检测到试件的加载之后,测量预定时间段。 在该时间测量期间,以预定的时间间隔显示时间段。 在该预定时间段的时间测量结束之后,用光照射测试材料,并且检测来自测试材料的光的强度。 可以基于这样检测的反射光强度来确定施加到测试材料上的试样的组分浓度。 此外,该测量装置可以检测试件的反向插入,并且构造成如果尚未设置要与存储的补充信息一起设置的样本的成分浓度的测量,则不能进行测量。