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91. 发明申请

US20100124646A1 Carbon nanotube film 有权
标题翻译：碳纳米管膜
公开(公告)号：US20100124646A1
公开(公告)日：2010-05-20
申请号：US12583391
申请日：2009-08-20
申请人： Kai-Li Jiang , Chen Feng , Lin Xiao , Zhuo Chen , Liang Liu , Shou-Shan Fan , Qun-Qing Li , Li Qian , Kai Liu , Yang Wei
发明人： Kai-Li Jiang , Chen Feng , Lin Xiao , Zhuo Chen , Liang Liu , Shou-Shan Fan , Qun-Qing Li , Li Qian , Kai Liu , Yang Wei
IPC分类号： C01B31/00 , D01F9/12 , B32B9/00
CPC分类号： G06F3/045 , B82Y30/00 , Y10T428/26 , Y10T428/30
摘要： A carbon nanotube film includes a plurality of first carbon nanotubes and a plurality of second carbon nanotubes. The first carbon nanotubes are orientated primarily along a same direction. The second carbon nanotubes have different orientations from that of the plurality of first carbon nanotubes. Each of at least one portion of the second carbon nanotubes contacts with at least two adjacent first carbon nanotubes.
摘要翻译：碳纳米管膜包括多个第一碳纳米管和多个第二碳纳米管。第一碳纳米管主要沿相同的方向取向。第二碳纳米管具有与多个第一碳纳米管不同的取向。第二碳纳米管的至少一部分中的每一个与至少两个相邻的第一碳纳米管接触。

92. 发明申请

US20100123267A1 Method for stretching carbon nanotube film 有权
标题翻译：碳纳米管膜拉伸方法
公开(公告)号：US20100123267A1
公开(公告)日：2010-05-20
申请号：US12583429
申请日：2009-08-20
申请人： Kai-Li Jiang , Chen Feng , Lin Xiao , Zhuo Chen , Liang Liu , Shou-Shan Fan , Qun-Qing Li , Li Qian , Kai Liu , Yang Wei
发明人： Kai-Li Jiang , Chen Feng , Lin Xiao , Zhuo Chen , Liang Liu , Shou-Shan Fan , Qun-Qing Li , Li Qian , Kai Liu , Yang Wei
IPC分类号： B29C55/00
CPC分类号： B29C55/04 , B29K2105/162 , D02J1/22
摘要： A method for stretching a carbon nanotube film includes providing one or more carbon nanotube films and one or more elastic supporters, attaching at least one portion of the one or more carbon nanotube films to the one or more elastic supporters, and stretching the elastic supporters.
摘要翻译：拉伸碳纳米管膜的方法包括提供一个或多个碳纳米管膜和一个或多个弹性支撑体，将一个或多个碳纳米管膜的至少一部分附着到一个或多个弹性支撑体上，并拉伸弹性支撑体。

93. 发明申请

US20100085729A1 Illuminating device 有权
标题翻译：照明装置
公开(公告)号：US20100085729A1
公开(公告)日：2010-04-08
申请号：US12584419
申请日：2009-09-03
申请人： Kai-Li Jiang , Chen Feng , Lin Xiao , Zhuo Chen , Liang Liu , Shou-Shan Fan , Qun-Qing Li , Li Qian
发明人： Kai-Li Jiang , Chen Feng , Lin Xiao , Zhuo Chen , Liang Liu , Shou-Shan Fan , Qun-Qing Li , Li Qian
IPC分类号： H04M1/22 , F21S8/08
CPC分类号： F21V33/0056 , H04R1/028 , H04R23/002
摘要： An illuminating device includes a holding element, a light source, and an acoustic member. The acoustic member includes a carbon nanotube structure.
摘要翻译：照明装置包括保持元件，光源和声学构件。声学构件包括碳纳米管结构。

94. 发明申请

US20100073322A1 Desktop computer 审中-公开
标题翻译：台式电脑
公开(公告)号：US20100073322A1
公开(公告)日：2010-03-25
申请号：US12459557
申请日：2009-07-02
申请人： Kai-Li Jiang , Qun-Qing Li , Shou-Shan Fan
发明人： Kai-Li Jiang , Qun-Qing Li , Shou-Shan Fan
IPC分类号： G06F3/044 , G06F3/041
CPC分类号： G06F3/045
摘要： A desktop computer includes a body, a display and a touch panel. The display is connected to the body by a data wire. The display includes a display screen. The touch panel includes at least one transparent conductive layer including a carbon nanotube structure.
摘要翻译：台式计算机包括主体，显示器和触摸面板。显示器通过数据线连接到主体。显示器包括显示屏幕。触摸面板包括至少一个包括碳纳米管结构的透明导电层。

95. 发明申请

US20090297732A1 Method for making carbon nanotube films 有权
标题翻译：制造碳纳米管薄膜的方法
公开(公告)号：US20090297732A1
公开(公告)日：2009-12-03
申请号：US12291305
申请日：2008-11-06
申请人： Kai-Li Jiang , Qun-Qing Li , Liang Liu , Shou-Shan Fan
发明人： Kai-Li Jiang , Qun-Qing Li , Liang Liu , Shou-Shan Fan
IPC分类号： C23C16/56 , C23C16/26 , C23C14/34 , B05D3/00
CPC分类号： C23C16/56 , B01J23/745 , B01J23/75 , B01J23/755 , B82Y30/00 , B82Y40/00 , C01B32/162 , C01B2202/08 , C01B2202/34 , C23C16/0281 , C23C16/26 , Y10S977/843
摘要： A method for making a carbon nanotube film, the method comprising the following steps of: (a) supplying a substrate; (b) forming at least one strip-shaped catalyst film on the substrate, a width of the strip-shaped catalyst films ranging from approximately 1 micrometer to 20 micrometers; (c) growing at least one strip-shaped carbon nanotube array on the substrate using a chemical vapor deposition method; and (d) causing the at least one strip-shaped carbon nanotube array to fold along a direction parallel to a surface of the substrate, thus forming at least one carbon nanotube film.
摘要翻译：一种制造碳纳米管膜的方法，该方法包括以下步骤：（a）供给基材; （b）在基底上形成至少一个条状催化剂膜，条形催化剂膜的宽度为约1微米至20微米; （c）使用化学气相沉积法在衬底上生长至少一个带状碳纳米管阵列; 和（d）使所述至少一个带状碳纳米管阵列沿着与所述基板的表面平行的方向折叠，从而形成至少一个碳纳米管膜。

96. 发明申请

US20090291534A1 Method for making thin film transistor 有权
标题翻译：制造薄膜晶体管的方法
公开(公告)号：US20090291534A1
公开(公告)日：2009-11-26
申请号：US12384241
申请日：2009-04-02
申请人： Qun-Qing Li , Xue-Shen Wang , Kai-Li Jiang , Shou-Shan Fan
发明人： Qun-Qing Li , Xue-Shen Wang , Kai-Li Jiang , Shou-Shan Fan
IPC分类号： H01L21/336
CPC分类号： H01L29/6675 , B82Y10/00 , B82Y40/00 , H01L29/0665 , H01L29/0673 , H01L51/0012 , H01L51/0048 , H01L51/0541
摘要： A method for making a thin film transistor, the method comprising the steps of: providing an insulating substrate; forming a carbon nanotube layer on the insulating substrate, the carbon nanotube layer includes a plurality of carbon nanotubes; applying a source electrode and a drain electrode spaced from each other and electrically connected to two opposite ends of at least one of carbon nanotubes; covering the carbon nanotube layer with an insulating layer; and placing a gate electrode on the insulating layer, the gate electrode being opposite to and electrically insulated from the carbon nanotube layer by the insulating layer.
摘要翻译：一种制造薄膜晶体管的方法，所述方法包括以下步骤：提供绝缘基板; 在所述绝缘基板上形成碳纳米管层，所述碳纳米管层包含多个碳纳米管; 施加彼此间隔开的电极和漏电极，并与至少一个碳纳米管的两个相对端电连接; 用绝缘层覆盖碳纳米管层; 并且在所述绝缘层上放置栅电极，所述栅电极与所述绝缘层相对并与所述碳纳米管层电绝缘。

97. 发明申请

US20090283753A1 Thin film transistor 审中-公开
标题翻译：薄膜晶体管
公开(公告)号：US20090283753A1
公开(公告)日：2009-11-19
申请号：US12384293
申请日：2009-04-02
申请人： Kai-Li Jiang , Qun-Qing Li , Shou-Shan Fan
发明人： Kai-Li Jiang , Qun-Qing Li , Shou-Shan Fan
IPC分类号： H01L29/66
CPC分类号： H01L51/0558 , B82Y10/00 , H01L51/0012 , H01L51/0048 , H01L51/0541 , H01L51/0545
摘要： A thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, and a gate electrode. The drain electrode is spaced from the source electrode. The semiconducting layer is electrically connected to the source electrode and the drain electrode. The semiconductor layer comprises a plurality of carbon nanotubes. A semiconductor layer comprising a plurality of carbon nanotubes electrically connected to the source electrode and the drain electrode, the plurality of carbon nanotubes having almost the same length are substantially parallel to each other and are joined side by side via van der Waals attractive force therebetween. The gate electrode is insulated from the source electrode, the drain electrode, and the semiconducting layer by an insulating layer.
摘要翻译：薄膜晶体管包括源电极，漏电极，半导体层和栅电极。漏电极与源电极间隔开。半导电层电连接到源电极和漏电极。半导体层包括多个碳纳米管。包含与源电极和漏电极电连接的多个碳纳米管的半导体层，具有几乎相同长度的多个碳纳米管基本上彼此平行并且通过其间的范德华力的吸引力并排连接。栅电极通过绝缘层与源电极，漏电极和半导体层绝缘。

98. 发明申请

US20090258163A1 Method for manufacturing nickel silicide nano-wires 有权
标题翻译：镍硅化物纳米线的制造方法
公开(公告)号：US20090258163A1
公开(公告)日：2009-10-15
申请号：US12291299
申请日：2008-11-06
申请人： Hai-Lin Sun , Kai-Li Jiang , Qun-Qing Li , Shou-Shan Fan
发明人： Hai-Lin Sun , Kai-Li Jiang , Qun-Qing Li , Shou-Shan Fan
IPC分类号： C23C16/513 , B05D1/36 , B05D3/00 , C23C16/00 , C23C14/34 , C23C14/35 , C23C14/54
CPC分类号： C01B33/06 , C30B23/00 , C30B29/10 , C30B29/60
摘要： A method for making nickel silicide nano-wire, the method includes the following steps. Firstly, providing a silicon substrate and a growing device, and the growing device including a reacting room. Secondly, forming a silicon dioxide layer on a surface of the silicon substrate. Thirdly, forming a titanium layer on the silicon dioxide layer. Fourthly, placing the silicon substrate into the reacting room, and heating the reacting room to a temperature of 500˜1000° C. Finally, forming a plurality of nickel cluster onto the surface of the silicon substrate.
摘要翻译：一种制造硅化镍纳米线的方法，该方法包括以下步骤。首先，提供硅衬底和生长装置，并且生长装置包括反应室。其次，在硅衬底的表面上形成二氧化硅层。第三，在二氧化硅层上形成钛层。第四，将硅衬底放入反应室中，并将反应室加热到500〜1000℃的温度。最后，在硅衬底的表面上形成多个镍簇。

99. 发明申请

US20090255459A1 Method for making zinc oxide nano-structrure 有权
标题翻译：制备氧化锌纳米结构的方法
公开(公告)号：US20090255459A1
公开(公告)日：2009-10-15
申请号：US12286217
申请日：2008-09-29
申请人： Kai-Li Jiang , Qun-Qing Li , Shou-Shan Fan
发明人： Kai-Li Jiang , Qun-Qing Li , Shou-Shan Fan
IPC分类号： C30B25/10
CPC分类号： C01G9/03 , B82Y30/00 , C01P2004/03 , C01P2004/13
摘要： A method for making zinc oxide nano-structure, the method includes the following steps. Firstly, providing a growing device, the growing device comprising a heating apparatus and a reacting room. Secondly, providing a growing substrate and forming a metal layer thereon. Thirdly, depositing a catalyst layer on the metal layer. Fourthly, placing the growing substrate into the reacting room together with a quantity of zinc source material. Fifthly, introducing a oxygen-containing gas into the reacting room. Lastly, heating the reacting room to a temperature range of 500˜1100° C.
摘要翻译：一种制备氧化锌纳米结构的方法，该方法包括以下步骤。首先，提供增长装置，该生长装置包括加热装置和反应室。其次，提供生长的衬底并在其上形成金属层。第三，在金属层上沉积催化剂层。第四，将生长的基材与一定量的锌源材料一起放置在反应室中。第五，向反应室中引入含氧气体。最后，将反应室加热至500〜1100℃的温度范围。

100. 发明授权

US09041029B2 Light emitting diode 有权
标题翻译：发光二极管
公开(公告)号：US09041029B2
公开(公告)日：2015-05-26
申请号：US13340627
申请日：2011-12-29
申请人： Zhen-Dong Zhu , Qun-Qing Li , Shou-Shan Fan
发明人： Zhen-Dong Zhu , Qun-Qing Li , Shou-Shan Fan
IPC分类号： H01L33/22 , H01L33/44 , B82Y20/00 , H01L33/00
CPC分类号： B82Y20/00 , H01L33/0095 , H01L33/22
摘要： A light emitting diode including a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The substrate includes a first surface and a second surface, and the second surface is a light emitting surface of the LED. The first semiconductor layer, the active layer, and the second semiconductor layer are stacked on the first surface in that order. A first electrode electrically is connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located on at least one surface of the substrate and aligned side by side, and a cross section of each of the three-dimensional nano-structure is M-shaped.
摘要翻译：提供了包括基板，第一半导体层，有源层和第二半导体层的发光二极管。基板包括第一表面和第二表面，并且第二表面是LED的发光表面。第一半导体层，有源层和第二半导体层以该顺序堆叠在第一表面上。第一电极与第一半导体层电连接。第二电极与第二半导体层电连接。多个三维纳米结构位于基板的至少一个表面上并排排列，并且每个三维纳米结构的横截面为M形。

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