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    • 5. 发明授权
    • Light emitting diode
    • 发光二极管
    • US09041030B2
    • 2015-05-26
    • US13340643
    • 2011-12-29
    • Zhen-Dong ZhuQun-Qing LiShou-Shan Fan
    • Zhen-Dong ZhuQun-Qing LiShou-Shan Fan
    • H01L33/22H01L33/44H01L33/38H01L33/40
    • H01L33/22H01L33/38H01L33/405
    • A light emitting diode is provided. The light emitting diode includes a first semiconductor layer, an active layer and a second semiconductor layer. The active layer is sandwiched between the first semiconductor layer and the second semiconductor layer, and a surface of the second semiconductor layer which is away from the active layer is a light emitting surface. A first electrode is electrically connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are formed on the light emitting surface. The number of the three-dimensional nano-structure are aligned side by side, and a cross-section of thee three-dimensional nano-structure is M-shaped.
    • 提供发光二极管。 发光二极管包括第一半导体层,有源层和第二半导体层。 有源层夹在第一半导体层和第二半导体层之间,并且远离有源层的第二半导体层的表面是发光表面。 第一电极与第一半导体层电连接。 第二电极与第二半导体层电连接。 在发光面上形成多个三维纳米结构。 三维纳米结构的数量并排排列,三维纳米结构的截面为M形。