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91. 发明授权

US08227325B2 Articles comprising crystalline layers on low temperature substrates 失效
标题翻译：在低温底物上包含结晶层的制品
公开(公告)号：US08227325B2
公开(公告)日：2012-07-24
申请号：US12707367
申请日：2010-02-17
申请人： Sachin Bet , Aravinda Kar
发明人： Sachin Bet , Aravinda Kar
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： C30B29/60 , C30B13/24 , C30B29/06 , H01L21/0237 , H01L21/02422 , H01L21/02521 , H01L21/02532 , H01L21/02601 , H01L21/02628 , H01L21/0268 , H01L21/02683
摘要： An article includes a polycrystalline semiconductor layer having a plurality of single crystal crystallites of semiconductor material and a substrate having a melting or softening point of
摘要翻译：一种制品包括具有多个半导体材料的单晶微晶的多晶半导体层和支撑半导体层的熔点或软化点<200℃的衬底。与远离界面的半导体层中的平均晶粒尺寸相比，在靠近衬底的界面处，多个单晶微晶的平均晶粒尺寸较小。将半导体层熔融而不是任何粘结剂或中间层，而不与衬底表面融合。

92. 发明授权

US08216921B2 Method for production of silicon wafer for epitaxial substrate and method for production of epitaxial substrate 有权
标题翻译：用于外延衬底的硅晶片的制造方法和外延衬底的制造方法
公开(公告)号：US08216921B2
公开(公告)日：2012-07-10
申请号：US12560847
申请日：2009-09-16
申请人： Tatsuo Fujii
发明人： Tatsuo Fujii
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L21/2205
摘要： A method for producing a silicon wafer for epitaxial substrate which includes a first step of performing thermal oxidization on a silicon wafer containing boron atoms no less than 1E19 atoms/cm3, thereby forming a silicon oxide film on the surface of the silicon wafer, a second step of peeling off the silicon oxide film, and a third step of performing heat treatment on the silicon wafer in a hydrogen atmosphere.
摘要翻译：一种外延衬底硅晶片的制造方法，其特征在于，在含有不少于1E19原子/ cm3的硼原子的硅晶片上进行热氧化的第一工序，在硅晶片的表面形成氧化硅膜，剥离氧化硅膜的步骤，以及在氢气氛中对硅晶片进行热处理的第三步骤。

93. 发明授权

US08211783B2 Method for manufacturing semiconductor device including a patterned SiOC film as a mask 有权
标题翻译：用于制造包括图案化的SiOC膜作为掩模的半导体器件的方法
公开(公告)号：US08211783B2
公开(公告)日：2012-07-03
申请号：US12966458
申请日：2010-12-13
申请人： Noriko Sakurai , Katsunori Yahashi , Tokuhisa Ohiwa
发明人： Noriko Sakurai , Katsunori Yahashi , Tokuhisa Ohiwa
IPC分类号： H01L21/20 , H01L21/36 , H01L21/4763 , H01L21/302 , H01L21/461
CPC分类号： H01L27/11578 , H01L27/11582 , H01L29/66833 , H01L29/7926
摘要： According to one embodiment, a method is disclosed for manufacturing a semiconductor device. The method can include multiply stacking an insulating layer and a conductive layer alternately above a base member. The insulating layer includes silicon oxide. The conductive layer includes silicon. In addition, the method can form a SiOC film on a stacked body of the insulating layers and the conductive layers, pattern the SiOC film, and make a hole in the stacked body by etching the insulating layers and the conductive layers using the patterned SiOC film as a mask.
摘要翻译：根据一个实施例，公开了一种用于制造半导体器件的方法。该方法可以包括在基底部件上交替地叠加绝缘层和导电层。绝缘层包括氧化硅。导电层包括硅。此外，该方法可以在绝缘层和导电层的层叠体上形成SiOC膜，对SiOC膜进行图案化，并且通过使用图案化的SiOC膜蚀刻绝缘层和导电层而在层叠体中形成孔作为面具。

94. 发明授权

US08207023B2 Methods of selectively depositing an epitaxial layer 有权
标题翻译：选择性沉积外延层的方法
公开(公告)号：US08207023B2
公开(公告)日：2012-06-26
申请号：US12849387
申请日：2010-08-03
申请人： Zhiyuan Ye , Saurabh Chopra , Yihwan Kim
发明人： Zhiyuan Ye , Saurabh Chopra , Yihwan Kim
IPC分类号： H01L21/00 , H01L21/84 , H01L21/7127 , H01L21/336 , H01L21/20 , H01L21/36 , H01L21/31
CPC分类号： H01L21/02532 , C23C16/325 , C23C16/56 , C30B25/04 , C30B25/14 , C30B25/18 , C30B33/12 , H01L21/02381 , H01L21/02538 , H01L21/02573 , H01L21/0262 , H01L21/02642 , H01L21/3065 , Y10S438/929
摘要： Methods for selectively depositing an epitaxial layer are provided herein. In some embodiments, providing a substrate having a monocrystalline first surface and a non-monocrystalline second surface; exposing the substrate to a deposition gas to deposit a layer on the first and second surfaces, the layer comprising a first portion deposited on the first surfaces and a second portion deposited on the second surfaces; and exposing the substrate to an etching gas comprising a first gas comprising hydrogen and a halogen and a second gas comprising at least one of a Group III, IV, or V element to selectively etch the first portion of the layer at a slower rate than the second portion of the layer. In some embodiments, the etching gas comprises hydrogen chloride (HCl) and germane (GeH4).
摘要翻译：本文提供了选择性沉积外延层的方法。在一些实施方案中，提供具有单晶第一表面和非单晶第二表面的基材; 将衬底暴露于沉积气体以在第一和第二表面上沉积层，该层包括沉积在第一表面上的第一部分和沉积在第二表面上的第二部分; 以及将所述衬底暴露于蚀刻气体，所述蚀刻气体包括包含氢和卤素的第一气体和包含III，IV或V族元素中的至少一种的第二气体，以选择性地蚀刻所述层的所述第一部分，第二部分的层。在一些实施方案中，蚀刻气体包括氯化氢（HCl）和锗烷（GeH 4）。

95. 发明申请

US20120149147A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120149147A1
公开(公告)日：2012-06-14
申请号：US13399369
申请日：2012-02-17
申请人： Shunpei YAMAZAKI , Junichiro SAKATA , Hiroki OHARA
发明人： Shunpei YAMAZAKI , Junichiro SAKATA , Hiroki OHARA
IPC分类号： H01L21/36
CPC分类号： H01L21/465 , H01L21/02565 , H01L21/28176 , H01L21/324 , H01L21/477 , H01L29/04 , H01L29/045 , H01L29/66742 , H01L29/66969 , H01L29/78603 , H01L29/78606 , H01L29/78618 , H01L29/78642 , H01L29/78648 , H01L29/7869 , H01L29/78696
摘要： A semiconductor device for high power application in which a novel semiconductor material having high mass productivity is provided. An oxide semiconductor film is formed, and then, first heat treatment is performed on the exposed oxide semiconductor film in order to reduce impurities such as moisture or hydrogen in the oxide semiconductor film. Next, in order to further reduce impurities such as moisture or hydrogen in the oxide semiconductor film, oxygen is added to the oxide semiconductor film by an ion implantation method, an ion doping method, or the like, and after that, second heat treatment is performed on the exposed oxide semiconductor film.
摘要翻译：一种用于大功率应用的半导体器件，其中提供了具有高质量生产率的新型半导体材料。形成氧化物半导体膜，然后对暴露的氧化物半导体膜进行第一热处理，以便减少氧化物半导体膜中的杂质如水分或氢。接下来，为了进一步减少氧化物半导体膜中的杂质，例如水分或氢气，通过离子注入法，离子掺杂法等将氧添加到氧化物半导体膜中，之后，第二热处理为在暴露的氧化物半导体膜上进行。

96. 发明授权

US08198178B2 Methods of fabricating normally-off semiconductor devices 有权
标题翻译：制造常闭半导体器件的方法
公开(公告)号：US08198178B2
公开(公告)日：2012-06-12
申请号：US13175069
申请日：2011-07-01
申请人： Sten Heikman , Yifeng Wu
发明人： Sten Heikman , Yifeng Wu
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L29/7787 , H01L29/1066 , H01L29/2003 , H01L29/402 , H01L29/66462
摘要： Normally-off semiconductor devices are provided. A Group III-nitride buffer layer is provided. A Group III-nitride barrier layer is provided on the Group III-nitride buffer layer. A non-conducting spacer layer is provided on the Group III-nitride barrier layer. The Group III-nitride barrier layer and the spacer layer are etched to form a trench. The trench extends through the barrier layer and exposes a portion of the buffer layer. A dielectric layer is formed on the spacer layer and in the trench and a gate electrode is formed on the dielectric layer. Related methods of forming semiconductor devices are also provided herein.
摘要翻译：提供通常的半导体器件。提供III族氮化物缓冲层。 III族氮化物阻挡层设置在III族氮化物缓冲层上。在III族氮化物阻挡层上提供非导电间隔层。 III族氮化物阻挡层和间隔层被蚀刻以形成沟槽。沟槽延伸穿过阻挡层并暴露缓冲层的一部分。在间隔层和沟槽中形成电介质层，在电介质层上形成栅电极。本文还提供了形成半导体器件的相关方法。

97. 发明授权

US08183134B2 Semiconductor device and manufacturing method with improved epitaxial quality of III-V compound on silicon surfaces 有权
标题翻译：具有提高硅表面III-V化合物外延质量的半导体器件和制造方法
公开(公告)号：US08183134B2
公开(公告)日：2012-05-22
申请号：US13009151
申请日：2011-01-19
申请人： Cheng-Hsien Wu , Chih-Hsin Ko , Clement Hsingjen Wann
发明人： Cheng-Hsien Wu , Chih-Hsin Ko , Clement Hsingjen Wann
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L21/8258 , H01L21/02381 , H01L21/0243 , H01L21/02433 , H01L21/02538 , H01L21/02639 , H01L21/02667 , H01L21/02675
摘要： Stacking faults are reduced or eliminated by epitaxially growing a III-V compound semiconductor region in a trench followed by capping and annealing the region. The capping layer limits the escape of atoms from the region and enables the reduction or elimination of stacking faults along with the annealing.
摘要翻译：通过在沟槽中外延生长III-V族化合物半导体区域，然后对该区域进行封盖和退火来减少或消除堆叠故障。封盖层限制了原子从该区域的逃逸，并且能够与退火一起减少或消除堆垛层错。

98. 发明授权

US08143145B2 Method and arrangement for producing an N-semiconductive indium sulfide thin layer 失效
标题翻译：用于生产N-半导体硫化铟薄层的方法和装置
公开(公告)号：US08143145B2
公开(公告)日：2012-03-27
申请号：US12934329
申请日：2009-03-14
申请人： Nicholas Allsop , Christian-Herbert Fischer , Sophie Gledhill , Martha Christina Lux-Steiner
发明人： Nicholas Allsop , Christian-Herbert Fischer , Sophie Gledhill , Martha Christina Lux-Steiner
IPC分类号： H01L21/36 , H01L21/20 , H01L21/76 , H01L21/469
CPC分类号： C23C16/305 , C23C16/45527
摘要： A method of producing, at atmospheric pressure, an n-type semiconductive indium sulfide thin film on a substrate using an indium-containing precursor, hydrogen sulfide as a reactive gaseous precursor, and an inert carrier gas stream includes cyclically repeating first and second steps so as to produce an indium sulfide thin film of a desired thickness. The first method phase includes converting the indium-containing precursor to at least one of a dissolved and a gaseous phase, heating the substrate to a temperature in a range of 100° C. to 275° C., directing the indium containing precursor onto the substrate and supplying hydrogen sulfide to the indium-containing precursor in a mixing zone in an amount so as to provide an absolute concentration of hydrogen sulfide that is greater than zero and no greater than 1% by volume. The indium concentration of the indium-containing precursor is set so as to produce a compact In(OHx,Xy,Sz)3 film, where X=halide and x+y+2z=1 with z≠0. The second step includes setting a temperature of the substrate in a range of 18° C. and 450° C. and directing hydrogen sulfide onto the substrate in an absolute concentration up to 100%.
摘要翻译：在大气压下使用含铟前体，硫化氢作为反应性气态前体和惰性载气流在基板上制造n型半导体硫化铟薄膜的方法包括循环重复第一和第二步骤以产生所需厚度的硫化铟薄膜。第一种方法阶段包括将含铟前体转化为溶解气相和气相中的至少一种，将基底加热至100℃至275℃的温度，将含铟前体引导到底物并在混合区中向含铟前体提供硫化氢，其量使得硫化氢的绝对浓度大于零且不大于1体积％。设定含铟前体的铟浓度，以便产生紧密的In（OH x，Xy，Sz）3膜，其中X =卤化物，x + y + 2z = 1，z≠0。第二步包括将基板的温度设定在18℃和450℃的范围内，并以绝对浓度高达100％的方式将硫化氢引导到基板上。

99. 发明申请

US20120064663A1 DEVICE AND METHOD FOR DEPOSITING ORGANIC MATERIAL 有权
标题翻译：用于沉积有机材料的装置和方法
公开(公告)号：US20120064663A1
公开(公告)日：2012-03-15
申请号：US13187369
申请日：2011-07-20
申请人： Seung-Ho Choi , Hyun Choi , Sung-Gon Kim , Min-Gyu Seo
发明人： Seung-Ho Choi , Hyun Choi , Sung-Gon Kim , Min-Gyu Seo
IPC分类号： H01L21/36 , B05B15/04
CPC分类号： H01L51/0003 , B05B1/14 , B05B12/36 , B05B13/04 , H01L51/0004 , H01L51/56
摘要： A device for depositing an organic material includes a substrate; a mask having an opening portion and a shield portion; a fixing member for fixing the substrate and the mask to each other; a deposition source comprising a plurality of nozzles arranged in a first direction and configured to spray the organic material; and a plurality of shield plates near the plurality of nozzles on the deposition source. An angle θ between the substrate and a line extended from a distal end of one of the nozzles to a center of a distal end of a corresponding one of the shield plates is greater than or equal to a taper angle Φ of the shield portion of the mask.
摘要翻译：用于沉积有机材料的装置包括：基板; 具有开口部分和屏蔽部分的掩模; 用于将所述基板和所述掩模彼此固定的固定构件; 沉积源，包括沿第一方向布置并被配置为喷射有机材料的多个喷嘴; 以及在沉积源上的多个喷嘴附近的多个屏蔽板。角度和角度在基板与从一个喷嘴的远端延伸到对应的一个屏蔽板的远端的中心的线之间的距离大于或等于掩模的屏蔽部分的锥角Φ。

100. 发明申请

US20120058630A1 Linear Cluster Deposition System 审中-公开
标题翻译：线性簇沉积系统
公开(公告)号：US20120058630A1
公开(公告)日：2012-03-08
申请号：US12877775
申请日：2010-09-08
申请人： William E. Quinn , Alexander Gurary , Ajit Paranjpe , Maria D. Ferreira , Roger P. Fremgen, JR. , Eric A. Armour
发明人： William E. Quinn , Alexander Gurary , Ajit Paranjpe , Maria D. Ferreira , Roger P. Fremgen, JR. , Eric A. Armour
IPC分类号： H01L21/36 , C23C16/06 , C23C16/08 , C23C16/00 , C23C16/44
摘要： A linear cluster deposition system includes a plurality of reaction chambers positioned in a linear horizontal arrangement. First and second reactant gas manifolds are coupled to respective process gas input port of each of the reaction chambers. An exhaust gas manifold having a plurality of exhaust gas inputs is coupled to the exhaust gas output port of each of the plurality of reaction chambers. A substrate transport vehicle transports at least one of a substrate and a substrate carrier that supports at least one substrate into and out of substrate transfer ports of each of the reaction chambers. At least one of a flow rate of process gas into the process gas input port of each of the reaction chambers and a pressure in each of the reaction chambers being chosen so that process conditions are substantially the same in at least two of the reaction chambers.
摘要翻译：线性簇沉积系统包括以线性水平布置定位的多个反应室。第一和第二反应气体歧管连接到每个反应室的相应工艺气体输入口。具有多个排气输入的废气歧管与多个反应室中的每一个的废气输出端口连接。基板输送车辆将基板和基板载体中的至少一个输送到每个反应室的基板输送口中并至少支撑至少一个基板。选择每个反应室的工艺气体进入工艺气体输入口的流量和每个反应室中的压力中的至少一个，使得工艺条件在至少两个反应室中基本相同。

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