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11. 发明授权

US08945474B2 Fluidized bed reactor heater 有权
标题翻译：流化床反应器加热器
公开(公告)号：US08945474B2
公开(公告)日：2015-02-03
申请号：US13841814
申请日：2013-03-15
申请人： Mitsubishi Polycrystalline Silicon America Corporation (MIPSA) , Mitsubishi Materials Corporation
发明人： Matthias Colomb , Rick Deckbar , Wesley Teichmiller , Bryan Nettles
IPC分类号： B01J8/18 , B01J19/08 , B01J12/00
CPC分类号： B01J8/1836 , B01J8/1827 , B01J8/44 , B01J2208/00389 , B01J2208/00407 , B01J2208/00415 , B01J2208/00495 , B01J2208/00902 , B01J2208/00929 , C01B33/1071
摘要： This invention is a heater used to heat the feed process gas from 450° C. to greater than about 600° C. for the fluidized bed reactor (FBR) used for conversion of silicon tetrachloride (STC) to trichlorosilane (TCS). The invention involves stacked heater element carbon plates. The design of the plates allow the plates to act as baffles which improve heat transfer to the feed gas. Also, the heat gradients across each plate is calculated to be approximately 100° C. which is much lower than the gradient seen by conventional vertical heater elements. The design of the present invention prevents electrical grounding. In the design, the elements are surrounded by graphite wrapped in carbon felt to prevent heat loss by radiation and conduction.
摘要翻译：本发明是用于将用于将四氯化硅（STC）转化为三氯硅烷（TCS）的流化床反应器（FBR））的进料工艺气体从450℃加热到大于约600℃的加热器。本发明涉及堆叠的加热元件碳板。板的设计允许板作为挡板，其改善对进料气的热传递。此外，每个板上的热梯度被计算为大约100℃，这远低于常规垂直加热器元件所看到的梯度。本发明的设计防止电接地。在设计中，元素被包裹在碳毡中的石墨包围，以防止辐射和传导引起的热量损失。

12. 发明授权

US08944499B2 Armrest for vehicle 有权
标题翻译：车辆扶手
公开(公告)号：US08944499B2
公开(公告)日：2015-02-03
申请号：US13837457
申请日：2013-03-15
申请人： Hyundai Motor Company
发明人： Man Ju Oh , Jae Woong Kim , Jae Woo Park
IPC分类号： A47C7/72 , B60N2/56 , B60N3/10
CPC分类号： B60N2/5635 , B60N2/793 , B60N3/104
摘要： The present invention discloses an armrest for a vehicle, the armrest having a front end, a rear end, and two sides; an intake port formed in the front end of an armrest body; an exhaust port formed in the rear end of the armrest body; a blower installed in the armrest body, the blower being connected to the exhaust port by an exhaust duct, and to the intake port by an intake duct, wherein the intake duct is configured to extend rearward from the intake port, branch off into a plurality of diverged parts, and converge prior to connection with the blower; a plurality of cup holders arranged in a row and positioned forward of the blower and proximate to the diverge parts of the intake duct; and a thermoelement disposed on each of the cup holders, the thermoelement being brought into close contact with the intake duct.
摘要翻译：本发明公开了一种用于车辆的扶手，所述扶手具有前端，后端和两侧; 形成在扶手本体的前端的进气口; 形成在扶手本体的后端的排气口; 鼓风机安装在扶手本体中，鼓风机由排气管连接到排气口，并通过进气管道连接到进气口，其中进气管构造成从进气口向后延伸，分支成多个的分流部件，并在与鼓风机连接之前会聚; 多个杯保持器布置成一排并且定位在鼓风机的前方并且靠近进气管的发散部分; 以及设置在每个杯架上的热电偶，热电元件与进气管道紧密接触。

13. 发明授权

US08944353B2 Method for producing fractured fragments of polycrystalline silicon 有权
$Method for producing fractured fragments of polycrystalline silicon$
标题翻译：多晶硅断裂碎片的制造方法
公开(公告)号：US08944353B2
公开(公告)日：2015-02-03
申请号：US13431005
申请日：2012-03-27
申请人： Shigeru Sato , Motoki Sato
发明人： Shigeru Sato , Motoki Sato
IPC分类号： B02C25/00 , B02C4/08 , B02C23/12
CPC分类号： B02C4/08 , B02C23/12
摘要： A method for producing fractured fragments of polycrystalline silicon having a fracturing process fracturing fragments of polycrystalline silicon between a pair of rolls which are rotated in a counter direction each other around parallel axes, in which: the rolls have a plurality of fracturing teeth protruding radially-outwardly from outer peripheral surfaces thereof; the fracturing teeth have spherical top surfaces and conical or cylindrical side surfaces; the fracturing process is performed in fracturing ratio of equal to or more than 1.0 to less than 1.5, and the fracturing ratio is specified by a maximum length of polycrystalline silicon before fracturing with respect to a facing distance between the top surfaces of the fracturing teeth at a facing part of the rolls.
摘要翻译：一种多晶硅断裂碎片的制造方法，其特征在于，具有压裂工艺，在一对辊之间，将多晶硅的碎片在平行的轴线上沿相反方向相互旋转的方式压裂，其中：所述辊具有径向突出的多个压裂齿，从其外周表面向外; 压裂齿具有球形顶表面和圆锥形或圆柱形侧表面; 在压裂比等于或大于1.0至小于1.5的条件下进行压裂过程，并且压裂比由断裂前的多晶硅的最大长度相对于压裂齿的顶表面之间的相对距离来规定面对的一部分卷。

14. 发明授权

US08944278B2 Clip-on handle grips 有权
标题翻译：夹柄手柄
公开(公告)号：US08944278B2
公开(公告)日：2015-02-03
申请号：US13076820
申请日：2011-03-31
申请人： William Chohfi , Carlos Aguiar
发明人： William Chohfi , Carlos Aguiar
IPC分类号： B65D25/10 , B65D25/22
CPC分类号： B65D25/22 , F17C2205/0308 , Y10T137/7062
摘要： A clip-on handle grip increases the surface area of a handle. The clip-on handle grip includes a grip body configured and adapted to engage a handle. A lock member is engaged with the grip body, for locking the engagement of the grip body with a handle. Such a clip-on handle grip can be used to improve ergonomics, the therefore to improve portability, for pressurized gas cylinders.
摘要翻译：夹柄手柄提高手柄的表面积。夹持把手包括构造并适于接合手柄的把手主体。锁定构件与抓握体接合，用于锁定把手主体与手柄的接合。这种夹式手柄可用于改善人体工程学，因此可提高加压气瓶的便携性。

15. 外观设计

USD721839S1 Rear combination lamp for automobiles 有权
公开(公告)号：USD721839S1
公开(公告)日：2015-01-27
申请号：US29463486
申请日：2013-12-11
申请人： Kia Motors Corporation
设计人： Ji-Won Ha , Kwae-Je Cho

16. 发明授权

US08939450B2 Mechanical seal assembly with compensation element 有权
标题翻译：带补偿元件的机械密封组件
公开(公告)号：US08939450B2
公开(公告)日：2015-01-27
申请号：US13383448
申请日：2010-07-20
申请人： Andreas Fesl
发明人： Andreas Fesl
IPC分类号： F16J15/38 , F16J15/34
CPC分类号： F16J15/3464
摘要： The invention relates to a mechanical seal assembly for sealing between a high pressure region and a low pressure region, comprising: a stationary seal ring connected to a stationary component, a rotating seal ring connected to a rotating component, a divided power absorption ring arranged at the rotating component, and a compensation ring unit comprising a first ring, a second ring and a third ring, wherein the first ring and the second ring have a higher strength than the third ring, and wherein the compensation ring unit is arranged in the force path between the high pressure region and the divided power absorption ring.
摘要翻译：本发明涉及一种用于在高压区和低压区之间进行密封的机械密封组件，包括：固定密封环，其连接到静止部件，连接到旋转部件的旋转密封环，所述旋转部件以及包括第一环，第二环和第三环的补偿环单元，其中所述第一环和所述第二环具有比所述第三环更高的强度，并且其中所述补偿环单元被布置成所述力高压区域和分离的功率吸收环之间的路径。

17. 发明授权

US08937284B2 Control and sensing system for diffusion optical tomography and method for operating the same 有权
标题翻译：用于扩散光学层析成像的控制和感测系统及其操作方法
公开(公告)号：US08937284B2
公开(公告)日：2015-01-20
申请号：US13524420
申请日：2012-06-15
申请人： Wai-Chi Fang , Tien-Ho Chen , Shih Kang , Shih-Yang Wu , Ching-Ju Cheng
发明人： Wai-Chi Fang , Tien-Ho Chen , Shih Kang , Shih-Yang Wu , Ching-Ju Cheng
IPC分类号： G01J5/10
CPC分类号： A61B5/0073 , A61B2562/046 , G01N21/4795
摘要： A control and sensing system for diffusion optical tomography and a method for operating the same are disclosed. The control and sensing system includes a control unit and a sensing circuit with a plurality of light sources and sensors, each light source being surrounded by a corresponding predetermined number of the sensors. The control unit instructs the light sources to individually emit light to an object, so the object generates a plurality of optical signals, and instructs the predetermined number of the sensors corresponding to each light source to receive the optical signals and transmit them to the control unit, thereby reducing the complexity of the control and sensing system.
摘要翻译：公开了一种用于扩散光学层析成像的控制和感测系统及其操作方法。控制和感测系统包括控制单元和具有多个光源和传感器的感测电路，每个光源被相应的预定数量的传感器包围。控制单元指示光源对物体分别发光，因此物体产生多个光信号，并指示与每个光源对应的预定数量的传感器接收光信号并将其发送到控制单元，从而降低了控制和感测系统的复杂性。

18. 发明授权

US08936964B2 Silicon carbide schottky-barrier diode device and method for manufacturing the same 有权
标题翻译：碳化硅肖特基势垒二极管器件及其制造方法
公开(公告)号：US08936964B2
公开(公告)日：2015-01-20
申请号：US14308095
申请日：2014-06-18
申请人： Hyundai Motor Company
发明人： Kyoung Kook Hong , Jong Seok Lee
IPC分类号： H01L29/872 , H01L29/16 , H01L21/02 , H01L21/265
CPC分类号： H01L29/872 , H01L21/02529 , H01L21/26506 , H01L29/1608 , H01L29/36 , H01L29/66143
摘要： The present invention provides a silicon carbide Schottky-barrier diode device and a method for manufacturing the same. The silicon carbide Schottky bather diode device includes a primary n− epitaxial layer, an n+ epitaxial region, and a Schottky metal layer. The primary n− epitaxial layer is deposited on an n+ substrate joined with an ohmic metal layer at an undersurface thereof. The n+ epitaxial region is formed by implanting n+ ions into a central region of the primary n− epitaxial layer. The Schottky metal layer is deposited on the n+ epitaxial layer.
摘要翻译：本发明提供一种碳化硅肖特基势垒二极管器件及其制造方法。碳化硅肖特基二极体装置包括初级n外延层，n +外延区和肖特基金属层。主n外延层沉积在与欧姆金属层的下表面连接的n +衬底上。通过将n +离子注入初级n外延层的中心区域来形成n +外延区域。肖特基金属层沉积在n +外延层上。

19. 发明授权

US08936906B2 Potentiator of activity of anti-cancer agent and use thereof, and biomarker for prediction of prognosis in cancer patient and use thereof 有权
标题翻译：抗癌剂活性的增效剂及其用途，以及用于预测癌症患者预后的生物标志物及其用途
公开(公告)号：US08936906B2
公开(公告)日：2015-01-20
申请号：US13728048
申请日：2012-12-27
申请人： National University Corporation Nagoya University
发明人： Masahide Takahashi , Takuya Kato , Fumitaka Kikkawa
IPC分类号： C12Q1/68 , C07H21/04 , C07H21/02
CPC分类号： C12N15/113 , A61K31/7105 , A61K31/711 , A61K31/713 , A61K33/24 , A61K45/06 , C07K14/435 , C07K16/18 , C12N15/111 , C12N15/1137 , C12N2310/11 , C12N2310/12 , C12N2310/14 , C12N2310/531 , C12N2320/31 , C12Y305/01098 , G01N33/574 , G01N33/57419 , G01N33/57442 , G01N33/6893 , G01N2800/50 , G01N2800/52 , A61K2300/00
摘要： Disclosed is a means for improving the clinical outcomes of cancer therapy. Specifically disclosed is an activity potentiator comprising a compound capable of inhibiting the expression of RFP (RET finger protein) gene or the activity of RFP as an active ingredient. The activity of an anti-cancer agent having an oxidative stress inducing ability can be potentiated by using the anti-cancer agent in combination with the activity potentiator. Further specifically disclosed are a biomarker useful for the recognition of prognosis in a cancer patient and use of the biomarker.
摘要翻译：披露了一种改善癌症治疗临床疗效的方法。具体公开的是包含能够抑制RFP（RET指蛋白）基因表达或作为活性成分的RFP活性的化合物的活性增强剂。具有氧化应激诱导能力的抗癌剂的活性可以通过使用抗癌剂与活性增强剂组合来加强。进一步具体公开的是可用于识别癌症患者的预后并使用生物标志物的生物标志物。

20. 发明授权

US08933198B2 HIV VPR-specific T cell receptors 有权
标题翻译： HIV VPR特异性T细胞受体
公开(公告)号：US08933198B2
公开(公告)日：2015-01-13
申请号：US12731485
申请日：2010-03-25
申请人： Marilyn Fernandez , Bai Liu , Warren D. Marcus , Hing C. Wong
发明人： Marilyn Fernandez , Bai Liu , Warren D. Marcus , Hing C. Wong
IPC分类号： C07K1/00 , G01N33/569 , C07K14/725 , C07K14/705
CPC分类号： C07K14/70503 , C07K14/705 , C07K14/7051 , G01N33/56988
摘要： The instant invention provides TCRs having one or more amino acid substitutions that bind to the AL9 epitope of the HIV protein vpr (AIIRILQQL (SEQ ID NO: 1)).
摘要翻译：本发明提供具有与HIV蛋白质vpr（AIIRILQQL（SEQ ID NO：1））的AL9表位结合的一个或多个氨基酸取代的TCR。

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