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1. 发明授权

US08945474B2 Fluidized bed reactor heater 有权
标题翻译：流化床反应器加热器
公开(公告)号：US08945474B2
公开(公告)日：2015-02-03
申请号：US13841814
申请日：2013-03-15
申请人： Mitsubishi Polycrystalline Silicon America Corporation (MIPSA) , Mitsubishi Materials Corporation
发明人： Matthias Colomb , Rick Deckbar , Wesley Teichmiller , Bryan Nettles
IPC分类号： B01J8/18 , B01J19/08 , B01J12/00
CPC分类号： B01J8/1836 , B01J8/1827 , B01J8/44 , B01J2208/00389 , B01J2208/00407 , B01J2208/00415 , B01J2208/00495 , B01J2208/00902 , B01J2208/00929 , C01B33/1071
摘要： This invention is a heater used to heat the feed process gas from 450° C. to greater than about 600° C. for the fluidized bed reactor (FBR) used for conversion of silicon tetrachloride (STC) to trichlorosilane (TCS). The invention involves stacked heater element carbon plates. The design of the plates allow the plates to act as baffles which improve heat transfer to the feed gas. Also, the heat gradients across each plate is calculated to be approximately 100° C. which is much lower than the gradient seen by conventional vertical heater elements. The design of the present invention prevents electrical grounding. In the design, the elements are surrounded by graphite wrapped in carbon felt to prevent heat loss by radiation and conduction.
摘要翻译：本发明是用于将用于将四氯化硅（STC）转化为三氯硅烷（TCS）的流化床反应器（FBR））的进料工艺气体从450℃加热到大于约600℃的加热器。本发明涉及堆叠的加热元件碳板。板的设计允许板作为挡板，其改善对进料气的热传递。此外，每个板上的热梯度被计算为大约100℃，这远低于常规垂直加热器元件所看到的梯度。本发明的设计防止电接地。在设计中，元素被包裹在碳毡中的石墨包围，以防止辐射和传导引起的热量损失。

2. 发明申请

US20140271380A1 FLUIDIZED BED REACTOR HEATER 有权
标题翻译：流化床反应器加热器
公开(公告)号：US20140271380A1
公开(公告)日：2014-09-18
申请号：US13841814
申请日：2013-03-15
申请人： Mitsubishi Polycrystalline Silicon America Corporation (MIPSA) , Mitsubishi Materials Corporation
发明人： Matthias Colomb , Rick Deckbar , Wesley Teichmiller , Bryan Nettles
IPC分类号： B01J8/18
CPC分类号： B01J8/1836 , B01J8/1827 , B01J8/44 , B01J2208/00389 , B01J2208/00407 , B01J2208/00415 , B01J2208/00495 , B01J2208/00902 , B01J2208/00929 , C01B33/1071
摘要： This invention is a heater used to heat the feed process gas from 450° C. to greater than about 600° C. for the fluidized bed reactor (FBR) used for conversion of silicon tetrachloride (STC) to trichlorosilane (TCS). The invention involves stacked heater element carbon plates. The design of the plates allow the plates to act as baffles which improve heat transfer to the feed gas. Also, the heat gradients across each plate is calculated to be approximately 100° C. which is much lower than the gradient seen by conventional vertical heater elements. The design of the present invention prevents electrical grounding. In the design, the elements are surrounded by graphite wrapped in carbon felt to prevent heat loss by radiation and conduction.
摘要翻译：本发明是用于将用于将四氯化硅（STC）转化为三氯硅烷（TCS）的流化床反应器（FBR））的进料工艺气体从450℃加热到大于约600℃的加热器。本发明涉及堆叠的加热元件碳板。板的设计允许板作为挡板，其改善对进料气的热传递。此外，每个板上的热梯度被计算为大约100℃，这远低于常规垂直加热器元件所看到的梯度。本发明的设计防止电接地。在设计中，元素被包裹在碳毡中的石墨包围，以防止辐射和传导引起的热量损失。

3. 发明授权

US10294109B2 Primary distillation boron reduction 有权
公开(公告)号：US10294109B2
公开(公告)日：2019-05-21
申请号：US15872309
申请日：2018-01-16
申请人： Mitsubishi Polycrystalline Silicon America Corporation (MIPSA) , MITSUBISHI MATERIALS CORPORATION
发明人： April Ashworth , Michael W. Keevan
IPC分类号： C01B33/039 , C01B33/021 , C01B33/035 , C01B33/107
摘要： The present invention relates to an apparatus and a method for producing polycrystalline silicon having a reduced amount of boron compound impurities. Especially, the boron compounds are removed from the process for producing polycrystalline silicon, while the trichlorosilane is purified by distillation. The invention feeds condensed liquid trichlorosilane into a primary distillation tower below the liquid level inside the primary distillation tower thereby scrubbing the boron impurities upon contact inside the primary distillation tower. There result is trichlorosilane leaving the primary distillation tower with total amount of boron at least 10 times less.

4. 发明申请

US20180080487A1 MECHANICAL SEED COUPLING 审中-公开
公开(公告)号：US20180080487A1
公开(公告)日：2018-03-22
申请号：US15826864
申请日：2017-11-30
申请人： Mitsubishi Polycrystalline Silicon America Corporation (MIPSA) , MITSUBISHI MATERIALS CORPORATION
发明人： Joseph Lovorn , Larry Gurley
IPC分类号： F16B7/04 , B28D5/02
CPC分类号： F16B7/0426 , B28D5/021 , F16B2200/10 , Y10T403/5733 , Y10T403/74
摘要： An apparatus and method of manufacturing silicon seed rod in which two silicon seeds are joined into one long silicon seed rod by mechanical coupling. A mechanical seed coupler is a body in having an outer wall, an upper surface with an upper aperture, a lower surface with a lower aperture, and an inner wall surrounding an inner space. The mechanical seed couple can be of a shape including a cylinder shape, an elliptical tube shape, a rectangular tube shape and a square tube shape. Furthermore the mechanical seed coupler can be of unitary construction, made from one solid piece of material, or it can be composed of subparts.

5. 发明申请

US20160152481A1 PRIMARY DISTILLATION BORON REDUCTION 审中-公开
标题翻译：主要蒸馏还原硼
公开(公告)号：US20160152481A1
公开(公告)日：2016-06-02
申请号：US14556640
申请日：2014-12-01
申请人： Mitsubishi Polycrystalline Silicon America Corporation (MIPSA)
发明人： April Ashworth , Michael W. Keevan
IPC分类号： C01B33/039 , B01J8/24 , C01B33/021
CPC分类号： C01B33/039 , C01B33/021 , C01B33/035 , C01B33/10763 , C01B33/10778
摘要： The present invention relates to an apparatus and a method for producing polycrystalline silicon having a reduced amount of boron compound impurities. Especially, the boron compounds are removed from the process for producing polycrystalline silicon, while the trichlorosilane is purified by distillation. The invention feeds condensed liquid trichlorosilane into a primary distillation tower below the liquid level inside the primary distillation tower thereby scrubbing the boron impurities upon contact inside the primary distillation tower. There result is trichlorosilane leaving the primary distillation tower with total amount of boron at least 10 times less.
摘要翻译：本发明涉及具有减少量的硼化合物杂质的多晶硅的制造装置和方法。特别是从制造多晶硅的方法中除去硼化合物，同时通过蒸馏纯化三氯硅烷。本发明将冷凝的液体三氯硅烷进料到初级蒸馏塔内部的液面之下的一级蒸馏塔中，从而在一级蒸馏塔内部接触时洗涤硼杂质。结果是三氯硅烷离开主蒸馏塔，总硼量至少少于10倍。

6. 发明申请

US20210291133A1 IRON CATALYZED HYDROCHLORINATION OF SILICON TETRACHLORIDE TO TRICHLOROSILANE 有权
公开(公告)号：US20210291133A1
公开(公告)日：2021-09-23
申请号：US17209835
申请日：2021-03-23
申请人： Mitsubishi Polycrystalline Silicon America Corporation (MIPSA)
发明人： Matthias A. Colomb , Bryan H. Nettles
IPC分类号： B01J8/18 , C01B33/107
摘要： In the hydrochlorination reaction, silicon tetrachloride (STC), metallurgical silicon, and hydrogen are converted to trichlorosilane (TCS) at about 540° C. Previously, a pilot-scale reactor was used to study the yield of TCS produced by the hydrochlorination reaction. The yield observed by experimentation compared favorably with a scalable mathematical model developed to predict the rate of TCS conversion. The model predicted that 90% of the final amount of TCS produced was achieved after the reactant gas traveled a quarter of the vertical distance in the reaction section of the reactor. The pilot-scale reactor was shortened to verify the model predictions. In addition, some catalytic effects on the reaction were studied.

7. 发明授权

US09758384B2 Bubble size minimizing internals for fluidized bed reactors 有权
公开(公告)号：US09758384B2
公开(公告)日：2017-09-12
申请号：US14556590
申请日：2014-12-01
申请人： Mitsubishi Polycrystalline Silicon America Corporation (MIPSA)
发明人： Bryan Nettles , Matthias Colomb , Rick Deckbar
IPC分类号： C01B33/107 , B01J8/18
CPC分类号： C01B33/10763 , B01J8/1809 , B01J8/1872 , B01J2208/0084 , B01J2208/00938 , B01J2208/00991
摘要： The present invention relates to internals useful for minimizing bubble size in a bubbling fluidized bed reactor. One use for the invention is in an apparatus and method for producing trichlorosilane in which metallurgical grade silicon is reacted with hydrogen chloride gas and while being fluidized by the hydrogen chloride gas, thereby producing trichlorosilane.

8. 发明申请

US20130121908A1 METHOD FOR PRODUCING TRICHLOROSILANE WITH REDUCED BORON COMPOUND IMPURITIES 审中-公开
标题翻译：用减少硼硼化合物生产三氯硅烷的方法
公开(公告)号：US20130121908A1
公开(公告)日：2013-05-16
申请号：US13729882
申请日：2012-12-28
申请人： Mitsubishi Polycrystalline Silicon America Corporation (MIPSA) , MITSUBISHI MATERIALS CORPORATION
发明人： Takeshi Kamei , Laura Prine , Takamasa Yasukawa , Yasuhiro Oda
IPC分类号： C01B33/107
CPC分类号： C01B33/10763 , C01B35/02 , C01B35/026
摘要： The present invention relates to a method for producing trichlorosilane having a reduced amount of boron compounds. The method including: (A) reacting metallurgical grade silicon with hydrogen chloride in a fluidized-bed reactor to produce a reaction gas including trichlorosilane; (B) first distilling the reaction gas, for separating first vapor fractions and first residue fractions, by setting a distillation temperature at a top of a distillation column between about a boiling point of trichlorosilane and about a boiling point of tetrachlorosilane and feeding the first vapor fractions to a second distillation column; (C) second distilling, for separating the trichlorosilane and second vapor fractions including boron compounds, by setting a distillation temperature at a top of the distillation column between about a boiling point of dichlorosilane and about a boiling point of trichlorosilane; and (D) feeding back the second vapor fractions to the fluidized-bed reactor.
摘要翻译：本发明涉及一种具有减少硼化合物量的三氯硅烷的制备方法。该方法包括：（A）在流化床反应器中使冶金级硅与氯化氢反应，生成包含三氯硅烷的反应气体; （B）首先蒸馏反应气体，用于分离第一蒸气馏分和第一残余馏分，将蒸馏塔顶部的蒸馏温度设定在约三氯硅烷的沸点和约四氯硅烷的沸点之间，并将第一蒸气馏分至第二蒸馏塔; （C）通过将蒸馏塔顶部的蒸馏温度设定在约二氯硅烷的沸点和约三氯硅烷的沸点之间，对三氯硅烷和包括硼化合物的第二蒸气馏分进行第二次蒸馏; 和（D）将第二蒸气馏分反馈到流化床反应器。

9. 发明申请

US20220105477A1 Controlled Hydrolysis of Hazardous Silicon Polymer Residue 有权
公开(公告)号：US20220105477A1
公开(公告)日：2022-04-07
申请号：US17065013
申请日：2020-10-07
申请人： Mitsubishi Polycrystalline Silicon America Corporation (MIPSA)
发明人： Wes Teichmiller , Bryan H. Nettles , Mark Servos , Matthias A. Colomb
IPC分类号： B01F3/02 , C01B33/107 , F25J3/04 , C01B33/03
摘要： A polymer handling method for a polycrystalline silicon manufacturing device, wherein the polymer byproducts are treated in a manner that the silicon polymers are hydrolyzed. The method creates a heated treatment gas with a moisture content that both treats the polymer to a depth of about 0.25 mm to prohibit formation of the friction and shock sensitive layer near the polymer surface and keeps the hydrolyzed polymer humidified. Furthermore the polymer handling method includes inactivation of the polymer, removal of the polymer of the system and disposal of the polymer after removal.

10. 发明授权

US11261096B2 Controlled silicon polymer treatment method 有权
公开(公告)号：US11261096B2
公开(公告)日：2022-03-01
申请号：US16023648
申请日：2018-06-29
申请人： Mitsubishi Polycrystalline Silicon America Corporation (MIPSA) , MITSUBISHI MATERIALS CORPORATION
发明人： Matthias Colomb , Rick Deckbar , Bryan Nettles
IPC分类号： C01B33/12 , C01B33/035
摘要： A polymer inactivation method for a polycrystalline silicon manufacturing device, wherein the polymer byproducts are treated and additionally treated in a manner that controls the rate of reaction. The polymer byproducts are treated with a first inert gas under partial vacuum and a second oxygen containing gas to convert the polymer byproducts. The reaction rate can be controlled by regulating the fill pressure of reactant gas, controlling the amount of oxygen in the reactant gas, and stripping of the raw polymer with heat and or a vacuum. The solid byproduct remaining after treating the polymer, which is predominately silicon suboxides (SiOx) and silicon dioxide (SiO2), is inert and is easily removed.

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