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11. 发明申请

US20110257336A1 BLOCK COPOLYMER COMPOSITION, FILM, AND METHOD FOR PRODUCING BLOCK COPOLYMER COMPOSITION 有权
标题翻译：嵌段共聚物组合物，薄膜和生产嵌段共聚物组合物的方法
公开(公告)号：US20110257336A1
公开(公告)日：2011-10-20
申请号：US13141950
申请日：2009-12-25
申请人： Ryouji Oda , Takeshi Ooishi
发明人： Ryouji Oda , Takeshi Ooishi
IPC分类号： C08L53/02
CPC分类号： C08L53/02 , C08F297/044 , C08J5/18 , C08J2353/02 , C08L2205/025
摘要： An object of the present invention is to provide a block copolymer composition containing an aromatic vinyl-conjugated diene-aromatic vinyl block copolymer, which is capable of achieving a high-level balance between a high elastic modulus and a small permanent set, and is capable of producing a highly isotropic molded product having uniform mechanical properties even when a molding method which is likely to cause molecular orientation, such as extrusion molding, is applied. The object is attained by providing a block copolymer composition comprising a block copolymer A represented by the following Formula (A) and a block copolymer B represented by the following Formula (B), wherein a weight ratio (A/B) between the block copolymer A and the block copolymer B is 36/64 to 85/15: Ar1a−Da−Ar2a (A) (Arb−Db)n−X (B), in the Formulae (A) and (B), Ar1a and Arb each represent an aromatic vinyl polymer block having a weight average molecular weight of 6,000 to 15,000; Ar2a represents an aromatic vinyl polymer block having a weight average molecular weight of 40,000 to 400,000; Wand Db each represent a conjugated diene polymer block having a vinyl bond content of 1 mol % to 20 mol %; X represents a residue of a coupling agent; and n represents an integer of 3 or greater.
摘要翻译：本发明的目的是提供一种含有芳族乙烯基 - 共轭二烯 - 芳族乙烯基嵌段共聚物的嵌段共聚物组合物，其能够实现高弹性模量与小永久变形体之间的高水平平衡，并且能够即使应用可能引起分子取向的成型方法，例如挤出成型，也可以制造具有均匀机械性能的高度各向同性的成型体。该目的通过提供一种嵌段共聚物组合物来实现，该嵌段共聚物组合物包含由下式（A）表示的嵌段共聚物A和由下式（B）表示的嵌段共聚物B，其中嵌段共聚物 A和嵌段共聚物B在式（A）和（B）中为36/64〜85/15:Ar1a-Da-Ar2a（A）（Arb-Db）n-X（B），Ar1a和Arb各自代表重均分子量为6,000至15,000的芳族乙烯基聚合物嵌段; Ar2a表示重均分子量为40,000〜400,000的芳族乙烯基聚合物嵌段; 禾谷Db各自表示乙烯基键含量为1摩尔％至20摩尔％的共轭二烯聚合物嵌段; X表示偶联剂的残基; n表示3以上的整数。

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