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    • 11. 发明申请
    • THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF
    • 薄膜晶体管及其制造方法
    • US20120187407A1
    • 2012-07-26
    • US13024978
    • 2011-02-10
    • Sung Hwan ChoiMin Koo Han
    • Sung Hwan ChoiMin Koo Han
    • H01L29/786H01L21/336
    • H01L29/66477H01L29/45H01L29/66969H01L29/78618H01L29/78693
    • Disclosed are a thin film transistor and a method of manufacturing the thin film transistor. An electrode layer of the thin film transistor includes a seed layer formed of a transparent conductive material doped with indium gallium zinc oxide (IGZO) and a main layer formed of a transparent conductive material. The thin film transistor includes a substrate, a gate electrode on the substrate, a gate insulation film on the substrate to cover the gate electrode, a semiconductor layer disposed on the gate insulation film in a region corresponding to the gate electrode, an electrode layer having a double layer structure and disposed on the gate insulation film in a manner such that a topside portion of the semiconductor layer is exposed through the electrode layer, and a passivation layer on the gate insulation film to cover the semiconductor layer and the electrode layer.
    • 公开了薄膜晶体管和制造薄膜晶体管的方法。 薄膜晶体管的电极层包括由掺杂有铟镓锌氧化物(IGZO)的透明导电材料和由透明导电材料形成的主层形成的晶种层。 所述薄膜晶体管包括基板,所述基板上的栅极电极,所述基板上的覆盖所述栅电极的栅极绝缘膜,在与所述栅电极对应的区域中的所述栅极绝缘膜上设置的半导体层,具有 双层结构,并且以使得半导体层的顶侧部分通过电极层露出的方式设置在栅极绝缘膜上,以及在栅极绝缘膜上覆盖半导体层和电极层的钝化层。
    • 14. 发明申请
    • Method of displaying wallpaper and apparatus for displaying wallpaper
    • 显示墙纸的方法和显示壁纸的装置
    • US20070024916A1
    • 2007-02-01
    • US11491230
    • 2006-07-24
    • Sung-hwan Choi
    • Sung-hwan Choi
    • G06K15/00
    • G06F3/04845
    • A method of displaying wallpaper and an apparatus for displaying wallpaper includes displaying an input image to be displayed on wallpaper as a background image and a wallpaper displaying frame containing the entire image or a part of the input image on a wallpaper setting window, modifying a wallpaper displaying frame area according to a user's instruction, and displaying the modified frame area on the wallpaper. The apparatus for displaying wallpaper includes an application unit that displays an input image to be inputted as a background image for wallpaper and a wallpaper displaying frame containing the entire input image or a part of the input image on a wallpaper setting window, a modification unit that modifies a wallpaper displaying frame area specified by the application unit according to a user's instruction, and a wallpaper displaying unit that displays the frame area modified by the modification unit on the wallpaper.
    • 一种显示壁纸的方法和一种用于显示壁纸的装置,包括将在壁纸上显示的输入图像作为背景图像和在壁纸设置窗口上包含整个图像或输入图像的一部分的壁纸显示框,修改壁纸 根据用户的指示显示帧区域,并在壁纸上显示修改的帧区域。 用于显示壁纸的装置包括:应用单元,其将要输入的输入图像显示为用于壁纸的背景图像;以及壁纸显示框,其将包含整个输入图像或输入图像的一部分放置在壁纸设置窗口上;修改单元, 根据用户的指示修改由应用单元指定的壁纸显示框区域;以及壁纸显示单元,其将由修改单元修改的框架区域显示在壁纸上。
    • 17. 发明授权
    • Thin film transistor and manufacturing method thereof
    • 薄膜晶体管及其制造方法
    • US08344384B2
    • 2013-01-01
    • US13024978
    • 2011-02-10
    • Sung Hwan ChoiMin Koo Han
    • Sung Hwan ChoiMin Koo Han
    • H01L29/04
    • H01L29/66477H01L29/45H01L29/66969H01L29/78618H01L29/78693
    • Disclosed are a thin film transistor and a method of manufacturing the thin film transistor. An electrode layer of the thin film transistor includes a seed layer formed of a transparent conductive material doped with indium gallium zinc oxide (IGZO) and a main layer formed of a transparent conductive material. The thin film transistor includes a substrate, a gate electrode on the substrate, a gate insulation film on the substrate to cover the gate electrode, a semiconductor layer disposed on the gate insulation film in a region corresponding to the gate electrode, an electrode layer having a double layer structure and disposed on the gate insulation film in a manner such that a topside portion of the semiconductor layer is exposed through the electrode layer, and a passivation layer on the gate insulation film to cover the semiconductor layer and the electrode layer.
    • 公开了薄膜晶体管和制造薄膜晶体管的方法。 薄膜晶体管的电极层包括由掺杂有铟镓锌氧化物(IGZO)的透明导电材料和由透明导电材料形成的主层形成的晶种层。 所述薄膜晶体管包括基板,所述基板上的栅极电极,所述基板上的覆盖所述栅电极的栅极绝缘膜,在与所述栅电极对应的区域中的所述栅极绝缘膜上设置的半导体层,具有 双层结构,并且以使得半导体层的顶侧部分通过电极层露出的方式设置在栅极绝缘膜上,以及在栅极绝缘膜上覆盖半导体层和电极层的钝化层。
    • 18. 发明申请
    • METHOD AND APPARTUS FOR ADAPTIVELY UPDATING RECOMMEND USER GROUP
    • 适应更新推荐用户组的方法和装置
    • US20090193015A1
    • 2009-07-30
    • US12349117
    • 2009-01-06
    • Jeong-rok JangCheol-ju HwangJae-hwang LeeMin-ho LeeSung-hwan ChoiSang-Wook ChoYun-ju Choe
    • Jeong-rok JangCheol-ju HwangJae-hwang LeeMin-ho LeeSung-hwan ChoiSang-Wook ChoYun-ju Choe
    • G06F7/06G06F17/30
    • G06F17/30867
    • A method of adaptively updating a first recommended user group list of a first user connected to a network, in which a predetermined number of second users are selected from the first recommend user group list that is a list of users having a high similarity to the first user in consuming contents. A predetermined number of third users having a high similarity to the first user is selected from second recommend user group lists respectively of the selected second users possess. The first recommend user group list is updated to include the selected third users. As the preference of a user changes, the recommend user group may be reconfigured with updated recommend users by reflecting a corresponding preference. Also, quality contents can be provided by recommending a user of a corresponding terminal with the contents preferred by other users in the updated recommend user group list.
    • 一种自适应地更新连接到网络的第一用户的第一推荐用户组列表的方法,其中从第一推荐用户组列表中选择预定数量的第二用户,该第一推荐用户组列表是与第一用户组具有高相似性的用户列表 用户在消费内容。 分别从所选择的第二用户拥有的第二推荐用户组列表中选择与第一用户具有高相似性的预定数量的第三用户。 第一个推荐的用户组列表被更新为包括所选择的第三个用户。 随着用户的偏好改变,可以通过反映相应的偏好来重新配置推荐用户组与更新的推荐用户。 此外,可以通过向更新的推荐用户组列表中的其他用户优选的内容推荐相应终端的用户来提供质量内容。