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    • 11. 发明申请
    • Platinum and Platinum Based Alloy Nanotubes as Electrocatalysts for Fuel Cells
    • 铂和铂基合金纳米管作为燃料电池的电催化剂
    • US20090220835A1
    • 2009-09-03
    • US12224197
    • 2007-02-24
    • Yan YushanZhongwei Chen
    • Yan YushanZhongwei Chen
    • H01M8/10H01M4/88
    • H01M4/92C22C5/04H01M4/8814H01M4/921H01M4/928H01M2008/1095Y02E60/50Y02E60/523
    • Electrocatalyst durability has been recently recognized as one of the most important issues that have to be addressed before the commercialization of the proton exchange membrane fuel cells (PEMFCs). The present invention is directed to a new class of cathode catalysts based on supportless platinum nanotubes (PtNTs) and platinum alloy nanotubes, for example, platinum-palladium nanotubes (PtPdNTs), that have remarkable durability and high catalytic activity. Due to their unique combination of dimensions at multiple length scales, the platinum nanotubes of the present invention can provide high platinum surface area due to their nanometer-sized wall thickness, and have the potential to eliminate or alleviate most of the degradation pathways of the commercial carbon supported platinum catalyst (Pt/C) and unsupported platinum-black (PtB) as a result of their micrometer-sized length. The platinum nanotube catalysts of the present invention asymptotically approach a maximum of about twenty percent platinum surface area loss in durability test, while the commercial PtB and Pt/C catalysts lose about fifty-one percent and ninety percent of their initial surface area, respectively. Moreover, the PtNT and PtPdNT catalysts of the present invention show higher mass activity and much higher specific activity than commercial Pt/C and PtB catalysts.
    • 电催化剂耐久性最近被认为是在质子交换膜燃料电池(PEMFC)商业化之前必须解决的最重要的问题之一。 本发明涉及一类新型的基于无支撑铂纳米管(PtNTs)和铂合金纳米管(例如铂 - 钯纳米管(PtPdNTs))的阴极催化剂,其具有显着的耐久性和高催化活性。 由于它们在多个长度尺度上的独特的尺寸组合,本发明的铂纳米管由于其纳米尺寸的壁厚可以提供高的铂表面积,并且具有消除或减轻商业的大部分降解途径的潜力 碳负载的铂催化剂(Pt / C)和无支撑的铂黑(PtB),由于其微米尺寸的长度。 本发明的铂纳米管催化剂在耐久性试验中渐近地接近约百分之二十的铂表面积损失,而商业PtB和Pt / C催化剂分别损失其初始表面积的百分之五十一和百分之九十。 此外,本发明的PtNT和PtPdNT催化剂显示比商业Pt / C和PtB催化剂更高的质量活性和更高的比活性。
    • 12. 发明授权
    • Method for in-line monitoring of via/contact holes etch process based on test structures in semiconductor wafer manufacturing
    • 基于半导体晶片制造中的测试结构的通孔/接触孔蚀刻工艺的在线监测方法
    • US06815345B2
    • 2004-11-09
    • US10302809
    • 2002-11-21
    • Yan ZhaoChang-Chun (Roland) YehZhongwei ChenJack Jau
    • Yan ZhaoChang-Chun (Roland) YehZhongwei ChenJack Jau
    • H01L2144
    • H01L22/34H01L21/76802H01L22/24
    • A method for in-line monitoring of via/contact etching process based on a test structure is described. The test structure is comprised of via/contact holes of different sizes and densities in a layout such that, for a certain process, the microloading or RIE lag induced non-uniform etch rate produce under-etch in some regions and over-etch in others. A scanning electron microscope is used to distinguish these etching differences in voltage contrast images. Image processing and simple calibration convert these voltage contrast images into a “fingerprint” image characterizing the etching process in terms of thickness over-etched or under-etched. Tolerance of shifting or deformation of this image can be set for validating the process uniformity. This image can also be used as a measure to monitor long-term process parameter shifting, as well as wafer-to-wafer or lot-to-lot variations. Advanced process control (APC) can be performed in-line with the guidance of this image so that potential electrical defects are avoided and process yield ramp accelerated.
    • 描述了一种基于测试结构进行通孔/接触蚀刻工艺在线监测的方法。 测试结构由布局不同尺寸和密度的通孔/接触孔组成,使得对于某些工艺,微加载或RIE滞后引起的不均匀蚀刻速率在一些区域产生蚀刻不良并且在其它区域中过度蚀刻 。 使用扫描电子显微镜来区分电压对比图像中的这些蚀刻差异。 图像处理和简单校准将这些电压对比图像转换成表征蚀刻工艺的“指纹”图像,就厚度过蚀刻或欠蚀刻而言。 该图像的偏移或变形的公差可以设置为验证过程的均匀性。 该图像也可用作监视长期过程参数移位以及晶圆到晶圆或批次间变化的度量。 先进的过程控制(APC)可以与该图像的引导一起进行,以便避免潜在的电气缺陷,加速产出斜率。