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11. 发明授权

US12021528B2 Semiconductor device 有权
公开(公告)号：US12021528B2
公开(公告)日：2024-06-25
申请号：US17874810
申请日：2022-07-27
申请人： FUJI ELECTRIC CO., LTD.
发明人： Morio Iwamizu
IPC分类号： H03K3/01 , H03K17/687
CPC分类号： H03K3/01 , H03K17/687
摘要： A semiconductor device for driving an inductive load. The semiconductor device includes an output-stage switch connected to the inductive load for operating the inductive load; a voltage detection circuit configured to output a detection signal responsive to an overvoltage being higher than or equal to a clamp voltage; a drive circuit configured to apply a drive signal having a first threshold voltage to a gate of the output-stage switch, responsive to the overvoltage being lower than the clamp voltage, to turn on the output-stage switch; and a voltage application circuit configured to apply a voltage signal having a second threshold voltage higher than the first threshold voltage to the gate of the output-stage switch, responsive to the overvoltage being higher than or equal to the clamp voltage and upon receiving the detection signal from the voltage detection circuit, to turn on the output-stage switch.

12. 发明授权

US10187049B2 Driving device and inductive load driving device 有权
公开(公告)号：US10187049B2
公开(公告)日：2019-01-22
申请号：US15437475
申请日：2017-02-21
申请人： FUJI ELECTRIC CO. LTD.
发明人： Morio Iwamizu
IPC分类号： H03K17/14 , H03K17/081 , H03K17/082
摘要： To provide an inductive load driving device which can control a clamp voltage using a ground voltage as a reference, with a simple structure. An inductive load driving device includes: an inductive load whose one end is connected to a power source and whose other end is connected to a ground: an output stage semiconductor switch element connected in series with the inductive load; a clamping circuit connected between a high-voltage side electrode and a control electrode of the output stage semiconductor switch element; and a resistance value control unit connected between the control electrode of the output stage semiconductor switch element and the ground.

13. 发明授权

US09438032B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US09438032B2
公开(公告)日：2016-09-06
申请号：US14470223
申请日：2014-08-27
申请人： FUJI ELECTRIC CO., LTD.
发明人： Morio Iwamizu
IPC分类号： H02H9/02 , H02H7/20 , H02H11/00
CPC分类号： H02H9/025 , H02H7/205 , H02H11/002
摘要： The semiconductor device includes a power chip including a switching element that switches a supply of power from a power supply to a load between an on-state and an off-state, a control chip in which is incorporated a control circuit that controls the switching element of the power chip, and a reverse connection protection circuit, provided in the control chip, that controls the switching element of the power chip into an on-state when the power supply is reverse-connected, wherein the reverse connection protection circuit has protective resistors, interposed between the control circuit and the positive electrode side of the power supply, and a control voltage formation circuit into which is input an intermediate voltage of the protective resistors and which forms a control voltage that controls the switching element of the power chip into an on-state when the power supply is reverse-connected.
摘要翻译：半导体器件包括电源芯片，其包括开关元件，该开关元件将电源从电源切换到导通状态和截止状态之间的负载;控制芯片，其中包括控制电路，控制电路控制开关元件以及设置在控制芯片中的反向连接保护电路，其在电源反向连接时将电力芯片的开关元件控制为接通状态，其中反向连接保护电路具有保护电阻器插入在电源的控制电路和正极侧之间，以及控制电压形成电路，输入保护电阻的中间电压并形成控制电压的控制电压形成电路，该控制电压将功率芯片的开关元件控制为电源反接时的导通状态。

14. 发明授权

US09252693B2 Stepping motor drive device 有权
标题翻译：步进电机驱动装置
公开(公告)号：US09252693B2
公开(公告)日：2016-02-02
申请号：US14304006
申请日：2014-06-13
申请人： FUJI ELECTRIC CO., LTD.
发明人： Morio Iwamizu
IPC分类号： H02P8/00 , H02P8/36
CPC分类号： H02P8/36
摘要： In a stepping motor drive device, it is possible to prevent malfunction due to negative current from a stepping motor of a plurality of power MOSFETs that apply drive voltage in a complementary way to paired coils of the stepping motor. A fall delay circuit delays the timing of the fall of input pulse signals applied in a complementary way to the gate of each of a plurality of MOSFETs that apply drive voltage in a complementary way to paired coils of a stepping motor by a time Td, wherein Td>Trise−Tfall, in accordance with a rise time Trise when turning on, and a fall time Tfall when turning off, the relevant MOSFET, and after one MOSFET is turned on, another MOSFET is turned off.
摘要翻译：在步进电动机驱动装置中，能够防止来自与步进电动机的成对线圈互补的驱动电压的多个功率MOSFET的步进电动机的负电流的故障。下降延迟电路延迟以互补的方式施加的输入脉冲信号的下降时间，其中多个MOSFET中的每一个的栅极以与时间Td的步进电机的成对线圈互补的方式施加驱动电压，其中 Td> Trise-Tfall，根据打开时的上升时间Trise，关闭时的下降时间Tfall，相关的MOSFET，并且在一个MOSFET导通之后，另一个MOSFET关闭。

15. 发明授权

US11502676B2 Driver circuit and semiconductor device 有权
公开(公告)号：US11502676B2
公开(公告)日：2022-11-15
申请号：US16940405
申请日：2020-07-28
申请人： FUJI ELECTRIC CO., LTD.
发明人： Sho Nakagawa , Morio Iwamizu
IPC分类号： H03K17/082 , H03K17/06 , H03K17/08 , H03K19/00
摘要： Provided is a driver circuit that controls an output unit that switches whether or not to supply a current to an output line, in accordance with a potential difference between a first control signal to be input and a voltage of the output line. The driver circuit comprises a control line that transmits the first control signal to the output unit; a low potential line to which a predetermined reference potential is applied; a first connection switching unit that switches whether or not to connect the control line and the low potential line, in accordance with a second control signal; and a cutoff unit that is provided in series with the first connection switching unit between the control line and the low potential line and cuts off the control line and the low potential line based on a potential of the low potential line.

16. 发明授权

US11329643B2 Driver circuit and semiconductor device 有权
公开(公告)号：US11329643B2
公开(公告)日：2022-05-10
申请号：US16940403
申请日：2020-07-28
申请人： FUJI ELECTRIC CO., LTD.
发明人： Morio Iwamizu
IPC分类号： H03K17/082 , H03K17/06 , H03K17/08 , H03K19/00
摘要： A driver circuit controls an output unit that switches whether or not to supply a current to an output line, in accordance with a potential difference between a first control signal to be input and a voltage of the output line. The driver circuit has a control line transmitting the first control signal to the output unit; a connection switching unit switching whether or not to connect the control line and the output line; a pre-stage control unit that is provided between a high potential line and a low potential line and selects and outputs a potential of any one of the high potential line and the low potential line in accordance with a second control signal; and a post-stage control unit causing the connection switching unit to connect the control line and the output line when the pre-stage control unit outputs a voltage higher than a predetermined threshold value.

17. 发明授权

US11070127B2 Semiconductor device 有权
公开(公告)号：US11070127B2
公开(公告)日：2021-07-20
申请号：US14620176
申请日：2015-02-11
申请人： FUJI ELECTRIC CO., LTD.
发明人： Morio Iwamizu
IPC分类号： H02M3/07 , H03K17/687 , H02M1/088 , H02M1/32
摘要： A semiconductor device that compensates for imbalance between a plurality of semiconductor elements connected in parallel by negative feedback to achieve current balance utilizing reversed temperature characteristics without providing any dedicated element just for cancelling temperature characteristics. A gate driving circuit turns ON a power semiconductor element by applying a voltage elevated by a charge pump (CP) circuit to a gate through a resistor connected between the CP circuit and the gate. The power semiconductor element is turned OFF by control circuit that gives a control signal to turn ON a MOS switch in the gate driving circuit and discharges the gate through a diode.

18. 发明授权

US10620650B2 Semiconductor device 有权
公开(公告)号：US10620650B2
公开(公告)日：2020-04-14
申请号：US16260198
申请日：2019-01-29
申请人： FUJI ELECTRIC CO., LTD.
发明人： Morio Iwamizu , Shinji Yamashina
IPC分类号： G05F1/573 , H01L27/07 , H02H5/04 , H01L29/78 , H01L27/06 , H01L27/02
CPC分类号： G05F1/573 , H01L27/0255 , H01L27/0629 , H01L27/0727 , H01L29/7808 , H01L29/7815 , H02H5/048 , H01L27/0733
摘要： A semiconductor device having an input terminal and an output terminal. The semiconductor device includes a power semiconductor element having a first main terminal connected to the output terminal, a second main terminal that is grounded and a gate terminal, and an active clamping circuit including a Zener diode and a diode connected in inverse series between the gate terminal and the first main terminal of the power semiconductor element. The semiconductor device further includes a clamp voltage switching circuit configured to switch a clamp voltage of the active clamping circuit according to a change in a voltage of the output terminal relative to the ground at a time when the power semiconductor element is turned off, the clamp voltage being switched to a first clamp voltage and a second clamp voltage, respectively, when the change in the voltage is not, and is, positive.

19. 发明授权

US10418336B2 Manufacturing method of semiconductor device and semiconductor device 有权
公开(公告)号：US10418336B2
公开(公告)日：2019-09-17
申请号：US15885837
申请日：2018-02-01
申请人： FUJI ELECTRIC CO., LTD.
发明人： Morio Iwamizu
IPC分类号： H01L23/00 , H01L21/768 , H01L21/3213 , H01L21/321 , H01L29/45 , H01L27/06 , H01L21/8234 , H01L21/285 , H01L29/739 , H01L29/06 , H01L29/78 , H01L29/423
摘要： To protect the insulating film so that crack is not produced in the insulating film even when stress is applied to the semiconductor device. A manufacturing method of a semiconductor device is provided, including: forming an insulating film above a semiconductor substrate; forming, in the insulating film, one or more openings that expose the semiconductor substrate; forming a tungsten portion deposited in the openings and above the insulating film; thinning the tungsten portion on condition that the tungsten portion remains in at least part of a region above the insulating film; and forming an upper electrode above the tungsten portion.

20. 发明授权

US09871513B2 Semiconductor device 有权
公开(公告)号：US09871513B2
公开(公告)日：2018-01-16
申请号：US15150489
申请日：2016-05-10
申请人： FUJI ELECTRIC CO., LTD.
发明人： Morio Iwamizu , Yasuki Yoshida
IPC分类号： H03K17/687 , H03K17/284 , H02M3/07 , H02P31/00 , H03K5/08 , H03K17/0812 , H03K17/082
CPC分类号： H03K17/687 , H02M3/07 , H02P31/00 , H03K5/08 , H03K17/08122 , H03K17/0822 , H03K17/284 , H03K2217/0081
摘要： In activating a motor, a gate voltage with which a power semiconductor element may supply a rush current of the motor is generated by a charge pump circuit, when a certain time (time until the rush current ends) has elapsed after activating the motor, a timer circuit operates a gate clamp circuit, which reduces the gate voltage of the power semiconductor element to reduce the current-carrying capability of the power semiconductor element. Subsequently, when the motor has caused a short-circuit failure, the power semiconductor element, because its gate voltage is reduced by the gate clamp circuit in advance, supplies only a load short current corresponding to the reduced gate voltage. Accordingly, the heat generation due to the short-circuit current is also small and an increase in temperature is also suppressed.

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