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    • 15. 发明授权
    • Apparatus for monitoring a dye solution to be adsorbed to a dye-sensitized solar cell, and apparatus for adjusting the dye solution
    • 用于监测要吸附到染料敏化太阳能电池的染料溶液的装置,以及用于调节染料溶液的装置
    • US09068941B2
    • 2015-06-30
    • US13255451
    • 2010-03-08
    • Chong-chan LeeYoon-Gil Yim
    • Chong-chan LeeYoon-Gil Yim
    • B65B3/04G01N21/00G01N31/00G01N21/59G01N21/84H01G9/20H01L51/00
    • G01N21/5907G01N2021/8416H01G9/2031H01G9/2059H01G9/2068H01L51/0086Y02E10/542
    • This disclosure relates to a dye solution monitoring device and a dye solution controlling device for a dye-sensitized solar cell, more particularly, to a dye solution monitoring device for a dye-sensitized solar cell comprising a light-absorption device for measuring absorbance of a dye solution for a dye-sensitized solar cell, and a pH measuring device for measuring pH of a dye solution for a dye-sensitized solar cell; and, a dye solution controlling device for a dye-sensitized solar cell further comprising a dye supply device supplying dye of high concentration, and an acid or base supply device for pH control, in addition to the monitoring device.According to the present invention, a dye adsorption process may be optimized in real time to manufacture a solar cell of high quality with high productivity, maximize utilization of expensive dye, and minimize the waste, thereby reducing production cost.
    • 本发明涉及一种用于染料敏化太阳能电池的染料溶液监测装置和染料溶液控制装置,更具体地涉及用于染料敏化太阳能电池的染料溶液监测装置,其包括用于测量吸光度的吸光装置 用于染料敏化太阳能电池的染料溶液和用于测量染料敏化太阳能电池的染料溶液的pH的pH测量装置; 以及用于染料敏化太阳能电池的染料溶液控制装置,除了监测装置之外,还包括供给高浓度染料的染料供给装置和用于pH控制的酸或碱供应装置。 根据本发明,可以实时优化染料吸附过程,以高生产率制造高质量的太阳能电池,最大限度地利用昂贵的染料,并最大限度地降低生产成本。
    • 16. 发明申请
    • Method for Forming Fine Patterns of Semiconductor Device Using Directed Self-Assembly Process
    • 使用定向自组装工艺形成半导体器件精细图案的方法
    • US20140287587A1
    • 2014-09-25
    • US14346080
    • 2012-09-27
    • DONGJIN SEMICHEM CO., LTD
    • Jung-Youl LeeEu-Jean JangJae-Woo LeeJae-Hyun Kim
    • H01L21/308
    • H01L21/3086B81C1/00031B81C2201/0149G03F7/0002H01L21/0271H01L21/0337
    • Provided herein is a method for forming fine patterns of semiconductor devices capable of forming patterns with 20 nm-level line width without bulk-exposure and hardening of guide patterns. Method steps include (a) forming a photoresist layer over a wafer on which an organic anti-reflection coating layer is formed; (b) exposing and developing the photoresist layer to form guide patterns; (c) forming a neutral layer over the wafer; (d) developing the guide patterns to remove them and form neutral layer patterns having an opening part; (e) coating block copolymer of directed self assembly material on the substrate and heating the substrate over a glass transition temperature (Tg) to form directed self-assembly patterns; and (f) selectively etching a part having relatively small etching resistivity (or high etching rate) among the directed self-assembly patterns by using O2 plasma to form fine patterns.
    • 本文提供了一种用于形成能够形成具有20nm级线宽的图案的半导体器件的精细图案的方法,而不引导图案的体积曝光和硬化。 方法步骤包括(a)在其上形成有机抗反射涂层的晶片上形成光致抗蚀剂层; (b)曝光和显影光致抗蚀剂层以形成引导图案; (c)在所述晶片上形成中性层; (d)显影引导图案以去除它们并形成具有开口部分的中性层图案; (e)将定向自组装材料的嵌段共聚物涂覆在基材上并在玻璃化转变温度(Tg)下加热基材以形成定向的自组装图案; 和(f)通过使用O 2等离子体来选择性地蚀刻定向自组装图案中具有相对小的蚀刻电阻率(或高蚀刻速率)的部分以形成精细图案。