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11. 发明授权

US5622635A Method for enhanced inductive coupling to plasmas with reduced sputter contamination 失效
标题翻译：减少溅射污染的等离子体感应耦合增强方法
公开(公告)号：US5622635A
公开(公告)日：1997-04-22
申请号：US417026
申请日：1995-04-05
申请人： Jerome J. Cuomo , C. Richard Guarnieri , Jeffrey A. Hopwood
发明人： Jerome J. Cuomo , C. Richard Guarnieri , Jeffrey A. Hopwood
IPC分类号： C23C14/00 , C23C16/50 , C23F4/00 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , H05H1/46 , C03C25/06 , H05H1/24
CPC分类号： H01J37/321 , H05H1/46
摘要： A method of gas plasma treating a workpiece in a process chamber having RF coil outside the chamber, a flat dielectric window, and a electrically conducting shield, adapted to be located between the RF coil and the dielectric window. The shield comprises a planar body section having a periphery, central opening, and outer gaps forming a substantially continuous opening about the periphery. A uniform magnetic field, inductively coupled with the plasma, is formed by routing the flux lines of the magnetic field through the central opening and outer gaps of the shield. Contamination from sputtering is substantially eliminated by reducing the capacitive electric fields generated by the coil that interfere with the inductive coupling between the coil and the gas plasma.
摘要翻译：一种在室外具有RF线圈的处理室中的气体等离子体处理方法，平坦电介质窗口和导电屏蔽件，其适于位于RF线圈和电介质窗口之间。屏蔽包括具有周边，中心开口和外部间隙的平面主体部分，其围绕周边形成基本上连续的开口。通过使磁场的磁通线穿过屏蔽的中心开口和外部间隙来形成与等离子体感应耦合的均匀磁场。通过减少线圈产生的电容电场干扰线圈和气体等离子体之间的电感耦合，基本上消除了溅射污染。

12. 发明授权

US5607601A Method for patterning and etching film layers of semiconductor devices 失效
标题翻译：图案化和蚀刻半导体器件的薄膜层的方法
公开(公告)号：US5607601A
公开(公告)日：1997-03-04
申请号：US382563
申请日：1995-02-02
申请人： Gary L. Loper , Martin D. Tabat
发明人： Gary L. Loper , Martin D. Tabat
IPC分类号： C23F1/12 , H01L21/3213 , H01L21/465 , H01L31/18 , C03C15/00 , B44C1/22 , C03C25/06 , C23F1/00
CPC分类号： H01L31/1884 , C23F4/02 , H01L21/32135 , H01L21/465 , Y02E10/50
摘要： In a laser assisted semiconductor etching process, a krypton fluoride excimer laser operating at 248 nm excites a carbonyl dichloride COCl.sub.2 radical precursor gas which decomposes into carbon monoxide and also atomic chlorine that bonds to laser illuminated surface layer materials of semiconductor devices to create gaseous chlorides which desorb to perfect selective etching, the surface layer material being Cu, Al, amphorous silicon, Ga.sub.(x) Al.sub.(1-x) As, CuIn.sub.(x) Ga.sub.(1-x) Se.sub.2, CdZnS, ZnO and other materials useful in the manufacture of semiconductor devices and solar cells.
摘要翻译：在激光辅助半导体蚀刻工艺中，以248nm操作的氪氟化物准分子激光器激发羰基二氯化物COCl 2自由基前体气体，其分解成一氧化碳，还包含键合到半导体器件的激光照射表面层材料的原子氯，以产生气态氯化物，解吸选择性蚀刻，表层材料为Cu，Al，两相硅，Ga（x）Al（1-x）As，CuIn（x）Ga（1-x）Se2，CdZnS，ZnO等有用的材料半导体器件和太阳能电池的制造。

13. 发明授权

US5603848A Method for etching through a substrate to an attached coating 失效
标题翻译：通过基板蚀刻到附着涂层的方法
公开(公告)号：US5603848A
公开(公告)日：1997-02-18
申请号：US367641
申请日：1995-01-03
申请人： Howard R. Beratan , James F. Belcher , Scott R. Summerfelt
发明人： Howard R. Beratan , James F. Belcher , Scott R. Summerfelt
IPC分类号： C23F1/02 , G01J5/20 , H01L37/02 , B44C1/22 , C03C19/00 , C03C25/06 , C23F1/00
CPC分类号： C23F1/02 , G01J5/20 , H01L37/02
摘要： An etching process is provided using electromagnetic radiation and a selected etchant (52) to selectively remove various types of materials (53) from a substrate (48). Contacts (49, 56, 64) may be formed to shield the masked regions (51) of the substrate (48) having an attached coating (20) during irradiation of the unmasked regions (53) of the substrate (48). The unmasked regions (53) are then exposed to an etchant (52) and irradiated to substantially increase their reactivity with the etchant (52) such that the etchant (52) etches the unmasked regions (53) substantially faster than the masked regions (51) and the contacts (49, 56, 64).
摘要翻译：使用电磁辐射和选择的蚀刻剂（52）提供蚀刻工艺，以从衬底（48）中选择性地去除各种类型的材料（53）。可以形成接触件（49,56,64），用于在衬底（48）的未掩模区域（53）的照射期间屏蔽具有附着涂层（20）的衬底（48）的被掩蔽区域（51）。然后将未掩蔽区域（53）暴露于蚀刻剂（52）并照射以显着增加其与蚀刻剂（52）的反应性，使得蚀刻剂（52）基本上比掩蔽区域（51）蚀刻未掩模区域（53））和触点（49,56,64）。

14. 发明授权

US5571375A Method of removing native oxide film from a contact hole on silicon wafer 失效
标题翻译：从硅晶片上的接触孔去除原生氧化膜的方法
公开(公告)号：US5571375A
公开(公告)日：1996-11-05
申请号：US929678
申请日：1992-08-13
申请人： Akira Izumi , Takeshi Matsuka
发明人： Akira Izumi , Takeshi Matsuka
IPC分类号： H01L21/306 , H01L21/308 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： H01L21/02063
摘要： A method of removing a native oxide film on a main surface of a silicon wafer. The native oxide film is formed in a contact hole of a patterned BPSG film or PSG film formed on the main surface. The method includes the steps of: placing a silicon wafer in a reaction chamber hermetically separated from outside atmosphere, and supplying mixed vapor of hydrogen fluoride and substantially high concentration alcohol to the reaction chamber. The step of supplying the mixed vapor of hydrogen fluoride and substantially high concentration alcohol preferably includes the steps of generating vapor from an azeotropic concentration mixture of hydrogen fluoride and alcohol, generating vapor of high purity alcohol solution and mixing these vapors. The vapor of hydrogen fluoride easily enters a small opening, which enables etching of the native oxide film. Since substantially high concentration alcohol exists in the reaction atmosphere, moisture the like by-product of etching is removed by the alcohol. Therefore, there is no possibility of excessively promoting etching of the BPSG film, etc. An alcohol layer is formed on the main surface after the etching, which prevents formation of a native oxide film on the main surface.
摘要翻译：一种去除硅晶片主表面上的自然氧化膜的方法。该自然氧化膜形成在形成在主表面上的图案化的BPSG膜或PSG膜的接触孔中。该方法包括以下步骤：将硅晶片放置在与外部气氛密封分离的反应室中，并向反应室供应氟化氢和基本上高浓度的醇的混合蒸汽。提供氟化氢和基本上高浓度醇的混合蒸气的步骤优选包括从氟化氢和醇的共沸浓缩混合物产生蒸汽，产生高纯度醇溶液的蒸气并混合这些蒸气的步骤。氟化氢的蒸汽容易进入小开口，这使得蚀刻天然氧化膜。由于在反应气氛中存在大量高浓度的醇，因此通过醇除去水分等蚀刻副产物。因此，不可能过度促进BPSG膜的蚀刻等。在蚀刻之后，在主表面上形成醇层，从而防止在主表面上形成自然氧化膜。

15. 发明授权

US5522520A Method for forming an interconnection in a semiconductor device 失效
标题翻译：在半导体器件中形成互连的方法
公开(公告)号：US5522520A
公开(公告)日：1996-06-04
申请号：US388455
申请日：1995-02-14
申请人： Hideaki Kawamoto
发明人： Hideaki Kawamoto
IPC分类号： H01L21/302 , H01L21/02 , H01L21/3205 , H01L21/3213 , H01L21/768 , H01L23/52 , C03C15/00 , B05D3/02 , C03C25/06
CPC分类号： H01L21/02071 , H01L21/32136 , H01L21/76838
摘要： An interconnection in a semiconductor device is made of a conductive laminate including a Ti film, a TiN film and an aluminium alloy film consecutively formed on a SiO.sub.2 film grown on a Si substrate. A heat treatment of the conductive layer is performed at 450.degree.-600.degree. C. before plasma-etching to introduce nitrogen and oxygen atoms from TiN film and SiO.sub.2 film, respectively, into the Ti film. The nitrogen and oxygen atoms prevent the side-etching of the Ti film during a plasma etching of the laminate using a plasma containing chlorine atoms. An interconnection having a high reliability is obtained with a high productivity.
摘要翻译：半导体器件中的互连由在Si衬底上生长的SiO 2膜上连续形成的Ti膜，TiN膜和铝合金膜的导电性层叠体构成。在等离子体蚀刻之前，在450℃-600℃下进行导电层的热处理，分别将TiN膜和SiO 2膜的氮和氧原子引入到Ti膜中。在使用含有氯原子的等离子体对层压体进行等离子体蚀刻期间，氮和氧原子防止了Ti膜的侧蚀刻。以高生产率获得具有高可靠性的互连。

16. 发明授权

US5409568A Method of fabricating a microelectronic vacuum triode structure 失效
标题翻译：制造微电子真空三极管结构的方法
公开(公告)号：US5409568A
公开(公告)日：1995-04-25
申请号：US924814
申请日：1992-08-04
申请人： Gregory S. Vasche
发明人： Gregory S. Vasche
IPC分类号： H01J9/02 , H01J21/10 , H01L21/306 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： H01J9/02 , H01J21/105
摘要： An improved vacuum microelectronic device comprised of a first polysilicon layer-having hornlike protrusions forming the emitter of the device, a first insulating layer separating the first polysilicon layer from a second polysilicon layer forming the grid of the device; a second insulating layer separating the second and third polysilicon layers. A portion of the first insulating layer, the second polysilicon layer, and second insulating layers are removed to form a grid aperture region positioned directly above the hornlike protrusion of the emitter. A cavity exists between the grid aperture region and a third polysilicon layer. The cavity is evacuated to form the vacuum region of the device.
摘要翻译：一种改进的真空微电子器件，由具有形成器件发射极的喇叭形突起的第一多晶硅层，将第一多晶硅层与形成器件栅格的第二多晶硅层分开的第一绝缘层构成; 分离第二和第三多晶硅层的第二绝缘层。去除第一绝缘层，第二多晶硅层和第二绝缘层的一部分，以形成位于发射极的角状突出部正上方的栅格孔径区域。在栅格孔径区域和第三多晶硅层之间存在空腔。将空腔抽真空以形成装置的真空区域。

17. 发明授权

US5370768A Method for making microstructures 失效
标题翻译：制造微结构的方法
公开(公告)号：US5370768A
公开(公告)日：1994-12-06
申请号：US135644
申请日：1993-10-14
申请人： Keith O. Mersereau , Casimir R. Nijander , Wesley P. Townsend
发明人： Keith O. Mersereau , Casimir R. Nijander , Wesley P. Townsend
IPC分类号： G02B3/00 , B44C1/22 , C03C15/00 , C03C25/06 , H01L21/306
CPC分类号： G02B3/0018 , G02B3/0056
摘要： Prior to the production of microlenses (29) by the reactive ion etch technique, a pattern of notches (25) is formed in a second surface of a substrate (11) opposite a first surface on which the microlenses (29) are to be formed. Reactive ion etching of the first surface to produce the microlenses is sufficiently deep to reach the pattern of notches, thereby to separate the substrate. The array of notches may define, for example, an array of first areas (26) on the second surface, each area being surrounded by a notch. Photoresist elements (28) are then each located on an area of the first surface corresponding to a first area of the second surface, so that the separation separates the substrate into a plurality of segments (26) each containing only one of the microlenses (29). The notches can be made such that each of the segments (26) is cylindrical so that each of the microlenses formed from the substrate has a circular outer periphery.
摘要翻译：在通过反应离子蚀刻技术生产微透镜（29）之前，在与要在其上形成微透镜（29）的第一表面相对的衬底（11）的第二表面中形成凹口（25）的图案。第一表面的反应离子蚀刻以产生微透镜足够深以达到凹口的图案，从而分离衬底。凹口阵列可以例如限定第二表面上的第一区域（26）的阵列，每个区域被凹口包围。光阻元件（28）然后各自位于与第二表面的第一区域对应的第一表面的区域上，使得该分离将基板分离成多个段（26），每个段仅包含一个微透镜（29 ）。可以制成切口，使得每个片段（26）是圆柱形的，使得由基底形成的每个微透镜具有圆形的外周边。

18. 发明授权

US5277754A Process for manufacturing liquid level control structure 失效
标题翻译：液位控制结构制造工艺
公开(公告)号：US5277754A
公开(公告)日：1994-01-11
申请号：US978848
申请日：1992-11-19
申请人： Babur B. Hadimioglu , Butrus T. Khuri-Yakub
发明人： Babur B. Hadimioglu , Butrus T. Khuri-Yakub
IPC分类号： B41J2/015 , B41J2/14 , B41J2/16 , H01L21/306 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： B41J2/1631 , B41J2/14008 , B41J2/1607 , B41J2/1626 , B41J2/1632 , B41J2002/14387
摘要： A liquid level control structure and a method for its production. The controller is comprised of a plate having substantially flat top and bottom surfaces and an hourglass-shaped aperture containing a marking fluid. Protruding a known amount and at a known angle from opposite sides of the aperture waist are knife-edged lips that interact with the fluid's surface tension to control the location of an unbounded surface of the fluid.The method for producing the liquid level control structure uses semiconductor fabrication techniques. The aperture is formed in a semiconductor wafer using several etching steps, some of which act along the crystalline planes of the wafer. The lips are formed from etch stop layers deposited between etching steps, while the knife-edges are formed on the ends of the lips during an etching step. Beneficially, the location of the knife-edges relative to one surface of the wafer is independent of small variations in the thickness of the water.
摘要翻译：液位控制结构及其生产方法。控制器由具有基本上平坦的顶部和底部表面的板和包含标记流体的沙漏形孔组成。从孔径腰部的相对侧突出已知的量并以已知的角度突出的是刀刃边缘，其与流体的表面张力相互作用以控制流体的无界表面的位置。液位控制结构的制造方法采用半导体制造技术。利用若干蚀刻步骤在半导体晶片中形成孔，其中一些蚀刻步骤沿着晶片的晶面起作用。唇缘由在蚀刻步骤之间沉积的蚀刻停止层形成，而在蚀刻步骤期间刀刃形成在唇缘的端部上。有利的是，刀刃相对于晶片的一个表面的位置是独立于水的厚度的小的变化。

19. 发明授权

US5269882A Method and apparatus for fabrication of thin film semiconductor devices using non-planar, exposure beam lithography 失效
标题翻译：使用非平面曝光光束光刻制造薄膜半导体器件的方法和装置
公开(公告)号：US5269882A
公开(公告)日：1993-12-14
申请号：US816628
申请日：1991-12-31
申请人： Stephen C. Jacobsen
发明人： Stephen C. Jacobsen
IPC分类号： B23K15/00 , B23K17/00 , B23K26/08 , G01P15/08 , G01P15/09 , G01P15/18 , G02B6/12 , G03C7/24 , G03F7/20 , G05B19/18 , G09F9/33 , G12B1/00 , H01L21/00 , H01L21/48 , H01L21/68 , H01L25/065 , H01L25/10 , H01L25/16 , H01L29/06 , H01L41/09 , H01L21/306 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： H01L21/67011 , B23K15/002 , B23K17/00 , B23K26/08 , B23K26/082 , G01P15/08 , G01P15/0922 , G01P15/18 , G02B6/12002 , G03C7/24 , G03F7/70691 , G05B19/186 , G09F9/33 , G12B1/00 , H01L21/4846 , H01L21/68 , H01L29/0657 , Y10S438/949
摘要： An apparatus and method for the nonplanar treatment of a volumetric workpiece or substrate utilizing exposure beam lithography are disclosed. The method includes supplying one or more layers of one or more semiconductor materials to surfaces of the substrate, applying a resist over the semiconductor layers, setting the resist, and then directing an exposure beam, such as an electron beam, toward the substrate. The substrate is then moved in at least two degrees freedom of movement, relative to the beam, with one degree of freedom of movement being the rotating of the substrate about an axis generally perpendicular to the beam. The other degree of freedom of movement could be moving the substrate linearly in a direction generally parallel to the axis. By such movement, the resist is exposed to the beam in a predetermined pattern. The exposed resist is then developed and a layer or layers under the exposed resist are etched. The remaining resist is then removed yielding the desired semiconductor device.
摘要翻译：公开了一种使用曝光光束光刻对体积工件或基板进行非平面处理的设备和方法。该方法包括将一层或多层半导体材料提供到衬底的表面，在半导体层上施加抗蚀剂，设置抗蚀剂，然后将诸如电子束的曝光束引向衬底。然后，相对于光束，基板移动至少两度的运动自由度，其中一个自由度运动是基板大致垂直于光束的轴线旋转。另一个运动自由度可以在大致平行于轴的方向上线性移动基板。通过这种移动，抗蚀剂以预定的图案暴露于光束。然后曝光的抗蚀剂被显影，并且暴露的抗蚀剂下面的一层或多层被蚀刻。然后去除剩余的抗蚀剂，产生所需的半导体器件。

20. 发明授权

US5259909A System and method for the checking of a reactive plasma machine 失效
标题翻译：用于检查反应性等离子体机器的系统和方法
公开(公告)号：US5259909A
公开(公告)日：1993-11-09
申请号：US998780
申请日：1992-12-29
申请人： Thierry de Villeneuve , Bernard Domergue
发明人： Thierry de Villeneuve , Bernard Domergue
IPC分类号： G05B19/042 , H01L21/306 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： G05B19/042
摘要： The selection of a formula by an operator on an independent reactive plasma machine using a certain number of reactive gases is checked by making a comparison, at a given instant, between the required flow-rate and the real flow-rate obtained, in associating a false parameter of the flow-rate of the gas with each formula memorized in the machine and by integrating, into the machine, a simulator of a flow controller of this gas which knows false the parameter of the flow-rate associated with the formula that should have been chosen by the operator, and responds with this parameter to the machine which asks for the real flow-rate of this gas.
摘要翻译：在使用一定数量的反应性气体的独立的反应性等离子体机器上，由操作者选择公式通过在给定时刻比较所需的流速与获得的实际流速之间的比较来确定气体流量的假参数，每个公式记录在机器中，并通过将该气体的流量控制器的模拟器集成到机器中，该模拟器知道与应该应用的公式相关联的流量的参数由操作员选择，并用该参数对要求该气体的实际流量的机器进行响应。

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