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21. 发明授权

US09444008B2 Semiconductor nanocrystals and compositions and devices including same 有权
公开(公告)号：US09444008B2
公开(公告)日：2016-09-13
申请号：US14246275
申请日：2014-04-07
申请人： QD VISION, INC.
发明人： Dorai Ramprasad , Craig Breen , Jonathan S. Steckel
IPC分类号： C09K11/08 , H01L33/28 , B82Y20/00 , B82Y30/00 , C09K11/02 , C09K11/56 , C09K11/88 , H01L29/225 , H01L33/06
CPC分类号： H01L33/06 , B82Y20/00 , B82Y30/00 , C09K11/02 , C09K11/565 , C09K11/883 , H01L29/225 , H01L33/0029 , H01L33/28 , Y10S977/774 , Y10S977/95 , Y10T428/2991 , Y10T428/2993
摘要： A semiconductor nanocrystal including a core comprising a first semiconductor material comprising at least three chemical elements and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material, wherein the semiconductor nanocrystal is capable of emitting light with an improved photoluminescence quantum efficiency. Also disclosed are populations of semiconductor nanocrystals, compositions and devices including a semiconductor nanocrystal capable of emitting light with an improved photoluminescence quantum efficiency. In one embodiment, a semiconductor nanocrystal includes a core comprising a first semiconductor material comprising at least three chemical elements and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material, wherein the semiconductor nanocrystal is capable of emitting light upon excitation with a photoluminescence quantum efficiency greater than about 65%. In another embodiment, a semiconductor nanocrystal includes a core comprising a first semiconductor material comprising zinc, cadmium, and sulfur and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material. In a further embodiment, a semiconductor nanocrystal includes a core comprises a first semiconductor material comprising at least three chemical elements and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material comprising at least three chemical elements, wherein the semiconductor nanocrystal is capable of emitting light with a photoluminescence quantum efficiency greater than about 60% upon excitation. In a further embodiment, a semiconductor nanocrystal including a core comprises a first semiconductor material comprising zinc, cadmium, and selenium and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material, wherein the semiconductor nanocrystal is capable of emitting light with a photoluminescence quantum efficiency greater than about 60% upon excitation.

22. 发明授权

US09431623B2 Flexible devices including semiconductor nanocrystals, arrays, and methods 有权
标题翻译：柔性器件包括半导体纳米晶体，阵列和方法
公开(公告)号：US09431623B2
公开(公告)日：2016-08-30
申请号：US12851336
申请日：2010-08-05
申请人： Peter T. Kazlas , Marshall Cox , Seth Coe-Sullivan , Ioannis Kymissis
发明人： Peter T. Kazlas , Marshall Cox , Seth Coe-Sullivan , Ioannis Kymissis
IPC分类号： H01L51/50 , B82Y20/00 , H01L27/32 , H01L51/00 , H01L51/52
CPC分类号： H01L51/502 , B82Y20/00 , H01L27/3293 , H01L51/0037 , H01L51/5203 , H01L51/5237 , H01L51/5246 , H01L51/5253 , H01L51/5259 , H01L2251/5338
摘要： The present invention relates to flexible devices including semiconductor nanocrystals, arrays including such devices, systems including the foregoing, and related methods. In one embodiment, a flexible light-emitting device includes a flexible substrate including a first electrode, an emissive layer comprising semiconductor nanocrystals disposed over the substrate, and second electrode disposed over the emissive layer comprising semiconductor nanocrystals, wherein, when the device is curved, the emissive layer comprising semiconductor nanocrystals lies substantially in the neutral plane of the device. In another embodiment, a light-emitting device includes an emissive layer comprising semiconductor nanocrystals disposed between two flexible substrates, a first electrode disposed over the emissive layer comprising semiconductor nanocrystals, and a second electrode disposed under the emissive layer comprising semiconductor nanocrystals. In certain preferred embodiments, at least one charge transport layer is disposed between one of the electrodes and the layer comprising semiconductor nanocrystals.
摘要翻译：本发明涉及包括半导体纳米晶体的柔性器件，包括这种器件的阵列，包括前述的系统以及相关方法。在一个实施例中，柔性发光器件包括柔性衬底，其包括第一电极，包含设置在衬底上的半导体纳米晶体的发射层和设置在包含半导体纳米晶体的发射层上的第二电极，其中当器件弯曲时，包括半导体纳米晶体的发射层基本上位于器件的中性平面中。在另一个实施例中，发光器件包括发射层，发射层包括设置在两个柔性衬底之间的半导体纳米晶体，设置在包含半导体纳米晶体的发射层上的第一电极以及设置在包含半导体纳米晶体的发射层下方的第二电极。在某些优选实施例中，至少一个电荷传输层设置在电极之一和包含半导体纳米晶体的层之间。

23. 发明授权

US09297092B2 Compositions, optical component, system including an optical component, devices, and other products 有权
标题翻译：组合物，光学部件，包括光学部件，装置和其它产品的系统
公开(公告)号：US09297092B2
公开(公告)日：2016-03-29
申请号：US13015670
申请日：2011-01-28
申请人： Craig Breen , John R. Linton
发明人： Craig Breen , John R. Linton
IPC分类号： C07F9/38 , C07F9/00 , C01B13/14 , H01B13/14 , C30B7/14 , B82Y30/00 , C30B29/48 , C30B29/60
CPC分类号： C30B7/14 , B82Y30/00 , C30B29/48 , C30B29/605
摘要： The present inventions relate to optical components which include quantum confined semiconductor nanoparticles, wherein at least a portion of the nanoparticles include a ligand attached to a surface thereof, the ligand being represented by the formula X-Sp-Z, wherein: X represents: a primary amine group, a secondary amine group, a urea, a thiourea, an imidizole group, an amide group, a carboxylic acid or carboxylate group, a phosphonic or arsonic acid group, a phosphoric acid group, a phosphate group, a phosphite group, a phosphinic acid group, a phosphinate group, a phosphine oxide group, a phosphinite group, a phosphine group, an arsenic acid group, an arsenate group, an arsenous acid group, an arsenite group, an arsinic acid group, an arsine oxide group, or an arsine group; Sp represents a group capable of allowing a transfer of charge or an insulating group; and Z represents a multifunctional group including three or more functional groups capable of communicating a specific property or chemical reactivity to the nanoparticle, wherein at least three of the functional groups are chemically distinct, and wherein Z is not reactive upon exposure to light. As used herein, the term “optical components” includes, but is not limited to, optical components, systems including optical components, lamps including optical components, devices including optical components, films useful in the foregoing, inks useful in making the foregoing, and compositions useful in the foregoing.
摘要翻译：本发明涉及包括量子限制半导体纳米颗粒的光学部件，其中至少一部分纳米颗粒包括与其表面连接的配体，该配体由式X-Sp-Z表示，其中：X表示：a 伯胺基，仲胺基，脲，硫脲，亚氨基咪唑基，酰胺基，羧酸或羧酸酯基，膦酸或芳基酸基，磷酸基，磷酸酯基，亚磷酸酯基，次膦酸基，次膦酸基，氧化膦基，亚磷酸基，膦基，砷酸基，砷酸酯基，亚砷酸基，亚砷酸酯基，亚磺酸基，氧化胂基，或胂基; Sp表示能够允许电荷转移或绝缘组的组; Z表示包括三个或更多个能够与纳米颗粒通过特定性质或化学反应性的官能团的多官能团，其中至少三个官能团在化学上不同，并且其中Z在暴露于光时不具有反应性。如本文所用，术语“光学部件”包括但不限于光学部件，包括光学部件的系统，包括光学部件的灯，包括光学部件的装置，可用于前述的膜，用于制造前述的油墨，以及可用于上述的组合物。

24. 发明授权

US09034669B2 Methods of depositing nanomaterial and methods of making a device 有权
标题翻译：沉积纳米材料的方法和制造器件的方法
公开(公告)号：US09034669B2
公开(公告)日：2015-05-19
申请号：US12287145
申请日：2008-10-06
申请人： Marshall Cox , LeeAnn Kim , Craig Breen , Maria J. Anc , Seth Coe-Sullivan , Peter T. Kazlas
发明人： Marshall Cox , LeeAnn Kim , Craig Breen , Maria J. Anc , Seth Coe-Sullivan , Peter T. Kazlas
IPC分类号： H01L21/00 , H01L21/02 , B82Y20/00 , B82Y30/00 , B82Y40/00 , C01B31/02 , H01L51/50 , H01L51/56
CPC分类号： H01L21/02628 , B05D2401/32 , B82Y20/00 , B82Y30/00 , B82Y40/00 , C01B32/15 , H01L21/02521 , H01L21/02601 , H01L21/02603 , H01L21/02606 , H01L21/02639 , H01L21/0271 , H01L51/5012 , H01L51/56 , Y10T428/31504
摘要： Methods for depositing material and nanomaterial onto a substrate are disclosed. Also disclosed are methods of making devices including nanomaterials, and a system useful for depositing materials and nanomaterials.
摘要翻译：公开了将材料和纳米材料沉积到基底上的方法。还公开了制造包括纳米材料的装置的方法和用于沉积材料和纳米材料的系统。

25. 发明申请

US20150014586A1 METHOD OF MAKING QUANTUM DOTS 有权
标题翻译：制作量子的方法
公开(公告)号：US20150014586A1
公开(公告)日：2015-01-15
申请号：US14284292
申请日：2014-05-21
申请人： QD VISION, INC.
发明人： WENHAO LIU , CRAIG BREEN
IPC分类号： C30B7/14 , C30B7/08 , H01L33/28 , C30B29/68 , C30B29/48 , C30B7/00 , C30B19/12
CPC分类号： C30B7/14 , B22F1/0018 , B22F1/025 , B22F9/24 , B82Y20/00 , B82Y30/00 , B82Y40/00 , C22C1/1026 , C22C20/00 , C30B7/005 , C30B7/08 , C30B19/12 , C30B29/48 , C30B29/68 , H01L21/02557 , H01L21/0256 , H01L21/02601 , H01L21/02628 , H01L33/28 , Y10S977/774 , Y10S977/892 , Y10S977/896 , Y10S977/95
摘要： Quantum dots and methods of making quantum dots are provided.
摘要翻译：提供量子点和制造量子点的方法。

26. 发明授权

US08906804B2 Composition including material, methods of depositing material, articles including same and systems for depositing materials 有权
标题翻译：组合物包括材料，沉积材料的方法，包括其的制品和用于沉积材料的系统
公开(公告)号：US08906804B2
公开(公告)日：2014-12-09
申请号：US13925572
申请日：2013-06-24
申请人： QD Vision, Inc.
发明人： Seth Coe-Sullivan , Maria J. Anc , LeeAnn Kim , John E. Ritter , Marshall Cox , Craig Breen , Vladimir Bulovic , Ioannis Kymissis , Robert F. Praino, Jr.
IPC分类号： H01L21/44 , H01L23/48 , H01L23/52 , H01L29/40 , B82Y30/00 , H01L51/50 , B82Y40/00 , B82Y20/00 , C01B31/02 , H01L21/02 , H01L51/56
CPC分类号： H01L21/02628 , B05D2401/32 , B82Y20/00 , B82Y30/00 , B82Y40/00 , C01B32/15 , H01L21/02521 , H01L21/02601 , H01L21/02603 , H01L21/02606 , H01L21/02639 , H01L21/0271 , H01L51/5012 , H01L51/56 , Y10T428/31504
摘要： Methods for depositing nanomaterial onto a substrate are disclosed. Also disclosed are compositions useful for depositing nanomaterial, methods of making devices including nanomaterials, and a system and devices useful for depositing nanomaterials.
摘要翻译：公开了将纳米材料沉积到基底上的方法。还公开了可用于沉积纳米材料的组合物，制造包括纳米材料的装置的方法，以及用于沉积纳米材料的系统和装置。

27. 发明申请

US20140312300A1 SEMICONDUCTOR NANOCRYSTALS AND COMPOSITIONS AND DEVICES INCLUDING SAME 有权
公开(公告)号：US20140312300A1
公开(公告)日：2014-10-23
申请号：US14246275
申请日：2014-04-07
申请人： QD VISION, INC.
发明人： DORAI RAMPRASAD , CRAIG BREEN , JONATHAN S. STECKEL
IPC分类号： H01L33/28 , H01L33/06
CPC分类号： H01L33/06 , B82Y20/00 , B82Y30/00 , C09K11/02 , C09K11/565 , C09K11/883 , H01L29/225 , H01L33/0029 , H01L33/28 , Y10S977/774 , Y10S977/95 , Y10T428/2991 , Y10T428/2993
摘要： A semiconductor nanocrystal including a core comprising a first semiconductor material comprising at least three chemical elements and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material, wherein the semiconductor nanocrystal is capable of emitting light with an improved photoluminescence quantum efficiency. Also disclosed are populations of semiconductor nanocrystals, compositions and devices including a semiconductor nanocrystal capable of emitting light with an improved photoluminescence quantum efficiency. In one embodiment, a semiconductor nanocrystal includes a core comprising a first semiconductor material comprising at least three chemical elements and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material, wherein the semiconductor nanocrystal is capable of emitting light upon excitation with a photoluminescence quantum efficiency greater than about 65%. In another embodiment, a semiconductor nanocrystal includes a core comprising a first semiconductor material comprising zinc, cadmium, and sulfur and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material. In a further embodiment, a semiconductor nanocrystal includes a core comprises a first semiconductor material comprising at least three chemical elements and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material comprising at least three chemical elements, wherein the semiconductor nanocrystal is capable of emitting light with a photoluminescence quantum efficiency greater than about 60% upon excitation. In a further embodiment, a semiconductor nanocrystal including a core comprises a first semiconductor material comprising zinc, cadmium, and selenium and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material, wherein the semiconductor nanocrystal is capable of emitting light with a photoluminescence quantum efficiency greater than about 60% upon excitation.

28. 发明申请

US20140227862A1 SEMICONDUCTOR NANOCRYSTALS AND METHODS 有权
标题翻译：半导体纳米晶体和方法
公开(公告)号：US20140227862A1
公开(公告)日：2014-08-14
申请号：US14182076
申请日：2014-02-17
申请人： QD VISION, INC.
发明人： Inja Song , Craig Breen
IPC分类号： H01L21/02
CPC分类号： H01L21/02601 , B01J13/22 , B82Y30/00 , H01L21/02518 , H01L21/02628
摘要： In one embodiment, a method for forming a coating comprising a semiconductor material on at least a portion of a population of semiconductor nanocrystals comprises providing a first mixture including semiconductor nanocrystals and an aromatic solvent, introducing one or more cation precursors and one or more anion precursors into the first mixture to form a reaction mixture for forming the semiconductor material, reacting the precursors in the reaction mixture, without the addition of an acid compound, under conditions sufficient to grow a coating comprising the semiconductor material on at least a portion of an outer surface of at least a portion of the semiconductor nanocrystals, and wherein an amide compound is formed in situ in the reaction mixture prior to isolating the coated semiconductor nanocrystals. In another embodiment, method for forming a coating comprising a semiconductor material on at least a portion of a population of semiconductor nanocrystals comprises providing a first mixture including semiconductor nanocrystals and a solvent, introducing an amide compound, one or more cation precursors and one or more anion precursors into the first mixture to form a reaction mixture for forming the semiconductor material, and reacting the precursors in the reaction mixture in the presence of the amide compound, under conditions sufficient to grow a coating comprising the semiconductor material on at least a portion of an outer surface of at least a portion of the semiconductor nanocrystals. Semiconductor nanocrystals including coatings grown in accordance with the above methods are also disclosed.
摘要翻译：在一个实施方案中，在半导体纳米晶体群的至少一部分上形成包含半导体材料的涂层的方法包括提供包含半导体纳米晶体和芳族溶剂的第一混合物，引入一种或多种阳离子前体和一种或多种阴离子前体进入第一混合物以形成用于形成半导体材料的反应混合物，使反应混合物中的前体在不加入酸化合物的条件下，在足以在至少一部分外部生长包含半导体材料的涂层的条件下反应半导体纳米晶体的至少一部分的表面，并且其中在分离涂覆的半导体纳米晶体之前在反应混合物中原位形成酰胺化合物。在另一个实施方案中，在半导体纳米晶体群的至少一部分上形成包含半导体材料的涂层的方法包括提供包含半导体纳米晶体和溶剂的第一混合物，引入酰胺化合物，一种或多种阳离子前体和一种或多种阴离子前体进入第一混合物以形成用于形成半导体材料的反应混合物，并且在酰胺化合物存在下使反应混合物中的前体在足以在至少一部分半导体纳米晶体的至少一部分的外表面。还公开了包括根据上述方法生长的涂层的半导体纳米晶体。

29. 发明申请

US20140061584A1 DEVICES AND METHODS 审中-公开
标题翻译：设备和方法
公开(公告)号：US20140061584A1
公开(公告)日：2014-03-06
申请号：US13683365
申请日：2012-11-21
申请人： QD Vision, Inc.
发明人： Gagan Mahan , Peter T. Kazlas
IPC分类号： H01L33/64 , H01L31/024
CPC分类号： H01L31/024 , H01L23/4334 , H01L31/052 , H01L33/641 , H01L2924/0002 , H01L2924/09701 , H01L2924/12044 , Y02E10/50 , H01L2924/00
摘要： A device comprising an arrangement of device materials and a layer comprising a material with heat-dissipating properties disposed over at least a portion thereof is disclosed. The device can further include an interleave layer disposed between the top surface of the arrangement of device materials and the layer comprising a material with heat-dissipating properties. A barrier layer may further be included between the arrangement of device materials and the layer comprising a material with heat-dissipating properties. Methods are also disclosed. In certain embodiments, a device includes quantum confined semiconductor nanoparticles.
摘要翻译：公开了一种装置，其包括装置材料的布置以及包括在其至少一部分上设置的具有散热特性的材料的层。该装置还可以包括布置在装置材料装置的顶表面和包含具有散热特性的材料的层之间的交错层。阻挡层可以进一步包括在器件材料的布置和包含具有散热特性的材料的层之间。还公开了方法。在某些实施例中，器件包括量子限制的半导体纳米颗粒。

30. 发明申请

US20140054540A1 DEVICE INCLUDING SEMICONDUCTOR NANOCRYSTALS & METHOD 审中-公开
标题翻译：包括半导体纳米晶体和方法的器件
公开(公告)号：US20140054540A1
公开(公告)日：2014-02-27
申请号：US13900272
申请日：2013-05-22
申请人： QD Vision, Inc.
发明人： Zhaoqun Zhou , Peter T. Kazlas , Marshall Cox
IPC分类号： H01L29/06 , H01L33/06 , H01L33/00 , H01L31/0352 , H01L21/02 , H01L31/18
CPC分类号： H01L29/0665 , H01L21/02601 , H01L31/035209 , H01L31/035218 , H01L31/18 , H01L33/005 , H01L33/06 , H01L51/0036 , H01L51/0037 , H01L51/426 , H01L2251/308 , Y02E10/549 , Y02P70/521
摘要： A method of making a device comprising semiconductor nanocrystals comprises forming a first layer capable of transporting charge over a first electrode, wherein forming the first layer comprises disposing a metal layer over the first electrode and oxidizing at least the surface of the metal layer opposite the first electrode to form a metal oxide, disposing a layer comprising semiconductor nanocrystals over the oxidized metal surface, and disposing a second electrode over the layer comprising semiconductor nanocrystals. A device comprises a layer comprising semiconductor nanocrystals disposed between a first electrode and a second electrode, and a first layer capable of transporting charge disposed between the layer comprising semiconductor nanocrystals one of the electrodes, wherein the first layer capable of transporting charge comprises a metal layer wherein at least the surface of the metal layer facing the layer comprising semiconductor nanocrystals is oxidized prior to disposing semiconductor nanocrystals thereover.
摘要翻译：制造包含半导体纳米晶体的器件的方法包括形成能够在第一电极上传输电荷的第一层，其中形成第一层包括在第一电极上设置金属层，并至少将金属层的表面氧化成与第一电极相对的第一层电极以形成金属氧化物，在氧化的金属表面上设置包含半导体纳米晶体的层，以及在包含半导体纳米晶体的层上设置第二电极。一种器件包括设置在第一电极和第二电极之间的包含半导体纳米晶体的层，以及能够传输设置在包括半导体纳米晶体的层之间的电荷的第一层，其中电极的一个电极包括金属层其中至少在面向包含半导体纳米晶体的层的金属层的表面在其上设置半导体纳米晶体之前被氧化。

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