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1. 发明申请

US20190237642A1 QUANTUM DOT (QD) LEDS, BACKLIGHT MODULES AND DISPLAYS 审中-公开
公开(公告)号：US20190237642A1
公开(公告)日：2019-08-01
申请号：US16008807
申请日：2018-06-14
申请人： HUIZHOU CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
发明人： Yong FAN
IPC分类号： H01L33/58 , H01L33/06 , H01L33/60 , H01L33/52
CPC分类号： H01L33/58 , H01L33/06 , H01L33/52 , H01L33/60
摘要： The present disclosure relates to a quantum dot (QD) light emitting diode (LED), a backlight module, and a display. The QD LED includes a support; an LED chip; at least one optical fiber layer; and a packaging layer; wherein: the LED chip is fixed and connected with the support; the at least one optical fiber layer is disposed on the LED chip, and the at least one optical fiber layer includes optical fibers encapsulated with QDs; and the packaging layer encapsulates the at least one optical fiber layer and the chip on the support.

2. 发明申请

US20190237619A1 HIGH EFFICIENCY VISIBLE AND ULTRAVIOLET NANOWIRE EMITTERS 审中-公开
公开(公告)号：US20190237619A1
公开(公告)日：2019-08-01
申请号：US16372946
申请日：2019-04-02
申请人： The Royal Institution for the Advancement of Learning/McGill University
发明人： Zetian MI , Songrui ZHAO , Renjie WANG
IPC分类号： H01L33/06 , H01L33/18 , H01S5/10 , H01L33/32 , H01S5/323 , H01L33/08 , H01L33/00
CPC分类号： H01L33/06 , H01L33/007 , H01L33/08 , H01L33/18 , H01L33/32 , H01S5/021 , H01S5/1042 , H01S5/32341 , H01S5/4006
摘要： GaN-based nanowire heterostructures have been intensively studied for applications in light emitting diodes (LEDs), lasers, solar cells and solar fuel devices. Surface charge properties play a dominant role on the device performance and have been addressed within the prior art by use of a relatively thick large bandgap AlGaN shell covering the surfaces of axial InGaN nanowire LED heterostructures has been explored and shown substantial promise in reducing surface recombination leading to improved carrier injection efficiency and output power. However, these lead to increased complexity in device design, growth and fabrication processes thereby reducing yield/performance and increasing costs for devices. Accordingly, there are taught self-organising InGaN/AlGaN core-shell quaternary nanowire heterostructures wherein the In-rich core and Al-rich shell spontaneously form during the growth process.

3. 发明申请

US20190237617A1 OPTOELECTRONIC COMPONENT 审中-公开
公开(公告)号：US20190237617A1
公开(公告)日：2019-08-01
申请号：US16329860
申请日：2017-08-28
申请人： OSRAM Opto Semiconductors GmbH
发明人： Werner Bergbauer , Joachim Hertkorn
IPC分类号： H01L33/06 , H01L33/00 , H01L33/32 , H01S5/34
CPC分类号： H01L33/06 , H01L33/0025 , H01L33/0075 , H01L33/32 , H01S5/3407
摘要： An optoelectronic component includes an active layer having a multiple quantum well structure, wherein the multiple quantum well structure includes quantum well layers, including Alx1Iny1Ga1-x1-y1N with 0≤x1

4. 发明申请

US20190214527A1 ULTRAVIOLET LIGHT-EMITTING DEVICES INCORPORATING GRADED LAYERS AND COMPOSITIONAL OFFSETS 审中-公开
公开(公告)号：US20190214527A1
公开(公告)日：2019-07-11
申请号：US16239728
申请日：2019-01-04
申请人： Craig MOE , James R. GRANDUSKY , Shawn R. GIBB , Leo J. SCHOWALTER , Kosuke SATO , Tomohiro MORISHITA
发明人： Craig MOE , James R. GRANDUSKY , Shawn R. GIBB , Leo J. SCHOWALTER , Kosuke SATO , Tomohiro MORISHITA
IPC分类号： H01L33/06 , H01L33/32 , H01L33/46 , H01L33/14 , H01L33/02 , H01L33/36 , H01L33/00
CPC分类号： H01L33/06 , H01L33/0075 , H01L33/025 , H01L33/145 , H01L33/32 , H01L33/36 , H01L33/405 , H01L33/46
摘要： In various embodiments, light-emitting devices incorporate graded layers with compositional offsets at one or both end points of the graded layer to promote formation of two-dimensional carrier gases and polarization doping, thereby enhancing device performance.

5. 发明申请

US20190214468A1 Gallium nitride materials and methods 审中-公开
公开(公告)号：US20190214468A1
公开(公告)日：2019-07-11
申请号：US16209858
申请日：2018-12-04
申请人： MACOM Technology Solutions Holdings, Inc.
发明人： T. Warren Weeks, JR. , Edwin Lanier Piner , Thomas Gehrke , Kevin J. Linthicum
IPC分类号： H01L29/15 , H01L29/205 , H01L21/02 , H01L33/04 , C30B23/02 , C30B25/18 , C30B29/06 , C30B29/68 , H01L33/06 , H01L29/778 , H01L29/78 , H01L29/04 , H01L29/06 , H01L29/201 , H01L29/66 , H01L33/12 , H01L33/00 , H01L29/20 , H01L29/225 , H01L33/32 , C30B29/40 , C30B25/02
CPC分类号： H01L29/155 , C30B23/02 , C30B23/025 , C30B25/02 , C30B25/18 , C30B25/183 , C30B29/06 , C30B29/403 , C30B29/406 , C30B29/68 , H01L21/02381 , H01L21/02422 , H01L21/0243 , H01L21/02433 , H01L21/0245 , H01L21/02458 , H01L21/02507 , H01L21/0251 , H01L21/0254 , H01L21/02598 , H01L21/0262 , H01L29/04 , H01L29/045 , H01L29/0649 , H01L29/2003 , H01L29/201 , H01L29/205 , H01L29/225 , H01L29/66462 , H01L29/7787 , H01L29/78 , H01L33/0066 , H01L33/007 , H01L33/0075 , H01L33/04 , H01L33/06 , H01L33/12 , H01L33/32 , Y10T428/24942 , Y10T428/26 , Y10T428/265
摘要： The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.

6. 发明申请

US20190207059A1 Semiconductor Layer Including Compositional Inhomogeneities 审中-公开
公开(公告)号：US20190207059A1
公开(公告)日：2019-07-04
申请号：US16299362
申请日：2019-03-12
申请人： Sensor Electronic Technology, Inc.
发明人： Michael Shur , Rakesh Jain , Maxim S. Shatalov , Alexander Dobrinsky , Jinwei Yang , Remigijus Gaska , Mikhail Gaevski
IPC分类号： H01L33/06 , H01L33/18 , H01S5/022 , H01L33/38 , H01L33/00
CPC分类号： H01L33/06 , H01L33/007 , H01L33/18 , H01L33/30 , H01L33/382 , H01L2224/14 , H01S5/0224 , H01S5/3209 , H01S5/3413 , H01S5/34333
摘要： A device comprising a semiconductor layer including a plurality of compositional inhomogeneous regions is provided. The difference between an average band gap for the plurality of compositional inhomogeneous regions and an average band gap for a remaining portion of the semiconductor layer can be at least thermal energy. Additionally, a characteristic size of the plurality of compositional inhomogeneous regions can be smaller than an inverse of a dislocation density for the semiconductor layer.

7. 发明申请

US20190198710A1 SEMICONDUCTOR NANOCRYSTALS, METHODS FOR MAKING SAME, COMPOSITIONS, AND PRODUCTS 审中-公开
公开(公告)号：US20190198710A1
公开(公告)日：2019-06-27
申请号：US16287830
申请日：2019-02-27
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Wenhao LIU , Craig BREEN , Seth COE-SULLIVAN
IPC分类号： H01L33/06 , C09D11/52 , C09K11/02 , C09K11/56 , H01L33/28 , H01L33/00 , C09K11/88
CPC分类号： H01L33/06 , B82Y20/00 , C09D11/52 , C09K11/02 , C09K11/565 , C09K11/883 , H01L33/0029 , H01L33/28 , H01L33/502 , Y10S977/774
摘要： A semiconductor nanocrystal characterized by having a solid state photoluminescence external quantum efficiency at a temperature of 90° C. or above that is at least 95% of the solid state photoluminescence external quantum efficiency of the semiconductor nanocrystal at 25° C. is disclosed. A semiconductor nanocrystal having a multiple LO phonon assisted charge thermal escape activation energy of at least 0.5 eV is also disclosed. A semiconductor nanocrystal capable of emitting light with a maximum peak emission at a wavelength in a range from 590 nm to 650 nm characterized by an absorption spectrum, wherein the absorption ratio of OD at 325 nm to OD at 450 nm is greater than 5.5. A semiconductor nanocrystal capable of emitting light with a maximum peak emission at a wavelength in a range from 545 nm to 590 nm characterized by an absorption spectrum, wherein the absorption ratio of OD at 325 nm to OD at 450 nm is greater than 7. A semiconductor nanocrystal capable of emitting light with a maximum peak emission at a wavelength in a range from 495 nm to 545 nm characterized by an absorption spectrum, wherein the absorption ratio of OD at 325 nm to OD at 450 nm is greater than 10. A composition comprising a plurality of semiconductor nanocrystals wherein the solid state photoluminescence efficiency of the composition at a temperature of 90° C. or above is at least 95% of the solid state photoluminescence efficiency of the composition 25° C. is further disclosed. A method for preparing semiconductor nanocrystals comprises introducing one or more first shell chalcogenide precursors and one or more first shell metal precursors to a reaction mixture including semiconductor nanocrystal cores, wherein the first shell chalcogenide precursors are added in an amount greater than the first shell metal precursors by a factor of at least about 2 molar equivalents and reacting the first shell precursors at a first reaction temperature of at least 300° C. to form a first shell on the semiconductor nanocrystal cores. Populations, compositions, components and other products including semiconductor nanocrystals of the invention are disclosed. Populations, compositions, components and other products including semiconductor nanocrystals made in accordance with any method of the invention is also disclosed.

8. 发明申请

US20190189835A1 METHOD OF MANUFACTURING AN OPTOELECTRONIC DEVICE BY TRANSFERRING A CONVERSION STRUCTURE ONTO AN EMISSION STRUCTURE 审中-公开
公开(公告)号：US20190189835A1
公开(公告)日：2019-06-20
申请号：US16223806
申请日：2018-12-18
申请人： Commissariat a l'energie atomique et aux energies alternatives , THALES
发明人： Amelie DUSSAIGNE , Ivan-Christophe ROBIN
IPC分类号： H01L33/00 , H01L33/32 , H01L33/06
CPC分类号： H01L33/0075 , H01L25/167 , H01L27/153 , H01L33/0025 , H01L33/007 , H01L33/0079 , H01L33/06 , H01L33/32 , H01L33/502 , H01L2933/0041
摘要： The invention relates to a method of manufacturing an optoelectronic device (1) produced on the basis of GaN, comprising an emission structure (10) configured to emit a first light radiation at the first wavelength (λ1), the method comprising the following steps: i. producing a growth structure (20) comprising a nucleation layer (23) of Inx2Ga1-x2N at least partially relaxed; ii. producing a conversion structure (30), comprising an emission layer (33) configured to emit light at a second wavelength (λ2), and an absorption layer (34) produced on the basis of InGaN; iii. transfer of the conversion structure (30) onto the emission structure (10) in such a way that the absorption layer (34) is located between the emission structure (10) and the emission layer (33) of the conversion structure.

9. 发明申请

US20190189436A1 METHODS FOR USING REMOTE PLASMA CHEMICAL VAPOR DEPOSITION (RP-CVD) AND SPUTTERING DEPOSITION TO GROW LAYERS IN LIGHT EMITTING DEVICES 审中-公开
公开(公告)号：US20190189436A1
公开(公告)日：2019-06-20
申请号：US16274778
申请日：2019-02-13
申请人： Lumileds LLC
发明人： Isaac Wildeson , Parijat Deb , Erik Charles Nelson , Junko Kobayashi
IPC分类号： H01L21/02 , H01L29/66 , H01L29/88 , H01L33/06 , H01L33/00 , H01L33/02 , H01L33/04
CPC分类号： H01L33/007 , H01L21/02271 , H01L21/02274 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02631 , H01L29/66151 , H01L29/66219 , H01L29/88 , H01L29/882 , H01L33/0025 , H01L33/02 , H01L33/04 , H01L33/06 , H01L33/325
摘要： Described herein are methods for using remote plasma chemical vapor deposition (RP-CVD) and sputtering deposition to grow layers for light emitting devices. A method includes growing a light emitting device structure on a growth substrate, and growing a tunnel junction on the light emitting device structure using at least one of RP-CVD and sputtering deposition. The tunnel junction includes a p++ layer in direct contact with a p-type region, where the p++ layer is grown by using at least one of RP-CVD and sputtering deposition. Another method for growing a device includes growing a p-type region over a growth substrate using at least one of RP-CVD and sputtering deposition, and growing further layers over the p-type region. Another method for growing a device includes growing a light emitting region and an n-type region using at least one of RP-CVD and sputtering deposition over a p-type region.

10. 发明申请

US20190148594A1 SEMICONDUCTOR OPTICAL DEVICE 审中-公开
公开(公告)号：US20190148594A1
公开(公告)日：2019-05-16
申请号：US16227032
申请日：2018-12-20
申请人： Sony Corporation
发明人： Takashi TANGE , Tatsushi HAMAGUCHI , Masaru KURAMOTO
IPC分类号： H01L33/32 , H01L21/28 , H01L33/06 , H01S5/343 , H01L33/40 , H01S5/042 , H01L33/42 , H01L33/16 , H01L33/00 , H01L21/205 , H01L21/20
CPC分类号： H01L33/32 , H01L21/20 , H01L21/205 , H01L21/28 , H01L33/0075 , H01L33/06 , H01L33/16 , H01L33/40 , H01L33/42 , H01S5/0425 , H01S5/22 , H01S5/32341 , H01S5/34333 , H01S2304/04
摘要： A semiconductor optical device has a multilayer structure 30 including a first compound semiconductor layer 31, an active layer 33, and a second compound semiconductor layer 32. A second electrode 42 is formed on the second compound semiconductor layer 32 through a contact layer 34. The contact layer 34 has a thickness of four or less atomic layers. When an interface between the contact layer 34 and the second compound semiconductor layer 32 is an xy-plane, a lattice constant along an x-axis of crystals constituting an interface layer 32A which is a part of the second compound semiconductor layer in contact with the contact layer 34 is x2, a lattice constant along a z-axis is z2, a length along an x-axis in one unit of crystals constituting the contact layer 34 is xc′, and a length along the z-axis is zc′, (zc′/xc′)>(z2/x2) is satisfied.

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