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    • 25. 发明授权
    • Light emitting device having a plurality of light emitting cells and method of fabricating the same
    • 具有多个发光单元的发光器件及其制造方法
    • US07880183B2
    • 2011-02-01
    • US12774525
    • 2010-05-05
    • Chung Hoon LeeHong San KimJames S. Speck
    • Chung Hoon LeeHong San KimJames S. Speck
    • H01L33/00
    • H01L27/153H01L33/62H01L33/64H01L2224/48095H01L2224/73265H01L2924/01012H01L2924/01079
    • Disclosed is a light emitting device having a plurality of light emitting cells. The light emitting device comprises a thermally conductive substrate, such as a SiC substrate, having a thermal conductivity higher than that of a sapphire substrate. The plurality of light emitting cells are connected in series on the thermally conductive substrate. Meanwhile, a semi-insulating buffer layer is interposed between the thermally conductive substrate and the light emitting cells. For example, the semi-insulating buffer layer may be formed of AlN or semi-insulating GaN. Since the thermally conductive substrate having a thermal conductivity higher than that of a sapphire substrate is employed, heat-dissipating performance can be enhanced as compared with a conventional sapphire substrate, thereby increasing the maximum light output of a light emitting device that is driven under a high voltage AC power source. In addition, since the semi-insulating buffer layer is employed, it is possible to prevent an increase in a leakage current through the thermally conductive substrate and between the light emitting cells.
    • 公开了具有多个发光单元的发光器件。 发光器件包括具有高于蓝宝石衬底的热导率的导热衬底,例如SiC衬底。 多个发光单元串联连接在导热基板上。 同时,在导热基板和发光单元之间插入半绝缘缓冲层。 例如,半绝缘缓冲层可以由AlN或半绝缘GaN形成。 由于采用具有高于蓝宝石基板的导热性的导热性基板,所以与以往的蓝宝石基板相比,能够提高散热性能,从而能够增大驱动下的发光元件的最大光输出 高压交流电源。 此外,由于采用了半绝缘缓冲层,因此可以防止通过导热基板和发光单元之间的漏电流的增加。
    • 28. 发明授权
    • Light emitting device having a plurality of light emitting cells and method of fabricating the same
    • 具有多个发光单元的发光器件及其制造方法
    • US07772601B2
    • 2010-08-10
    • US11815255
    • 2005-07-05
    • Chung Hoon LeeHong San KimJames S. Speck
    • Chung Hoon LeeHong San KimJames S. Speck
    • H01L33/00
    • H01L27/153H01L33/62H01L33/64H01L2224/48095H01L2224/73265H01L2924/01012H01L2924/01079
    • Disclosed is a light emitting device having a plurality of light emitting cells. The light emitting device comprises a thermally conductive substrate, such as a SiC substrate, having a thermal conductivity higher than that of a sapphire substrate. The plurality of light emitting cells are connected in series on the thermally conductive substrate. Meanwhile, a semi-insulating buffer layer is interposed between the thermally conductive substrate and the light emitting cells. For example, the semi-insulating buffer layer may be formed of AlN or semi-insulating GaN. Since the thermally conductive substrate having a thermal conductivity higher than that of a sapphire substrate is employed, heat-dissipating performance can be enhanced as compared with a conventional sapphire substrate, thereby increasing the maximum light output of a light emitting device that is driven under a high voltage AC power source. In addition, since the semi-insulating buffer layer is employed, it is possible to prevent an increase in a leakage current through the thermally conductive substrate and between the light emitting cells.
    • 公开了具有多个发光单元的发光器件。 发光器件包括具有高于蓝宝石衬底的热导率的导热衬底,例如SiC衬底。 多个发光单元串联连接在导热基板上。 同时,在导热基板和发光单元之间插入半绝缘缓冲层。 例如,半绝缘缓冲层可以由AlN或半绝缘GaN形成。 由于采用具有高于蓝宝石基板的导热性的导热性基板,所以与以往的蓝宝石基板相比,能够提高散热性能,从而能够增大驱动下的发光元件的最大光输出 高压交流电源。 此外,由于采用了半绝缘缓冲层,因此可以防止通过导热基板和发光单元之间的漏电流的增加。