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21. 发明授权

US10390780B2 Method and X-ray device for temporal up-to-date representation of a moving section of a body, computer program product and data carrier 有权
公开(公告)号：US10390780B2
公开(公告)日：2019-08-27
申请号：US13554435
申请日：2012-07-20
申请人： Jing Feng Han , Matthias John
发明人： Jing Feng Han , Matthias John
IPC分类号： A61B8/00 , A61B6/00 , A61B8/08 , A61B8/12 , A61B90/00 , A61B34/20
摘要： A computer-implemented method for temporal up-to-date representation of a moving section of a body is provided. A first x-ray image data record is provided containing the moving section in a specific movement phase and a first 2D x-ray image and a 3D x-ray image superimposed and registered with one another. 2D x-ray images are repeatedly recorded each containing the moving section. 3D ultrasound images are repeatedly recorded each containing the moving section. Extended 2D x-ray images are created from the 2D x-ray images using the first x-ray images data record. The 3D ultrasound images are used as intermediaries for movement correction. The extended 2D images are displayed.

22. 发明授权

US08634638B2 Real-time action detection and classification 有权
标题翻译：实时动作检测与分类
公开(公告)号：US08634638B2
公开(公告)日：2014-01-21
申请号：US12488911
申请日：2009-06-22
申请人： Feng Han , Hui Cheng , Jiangjian Xiao , Harpreet Singh Sawhney , Sang-Hack Jung , Rakesh Kumar , Yanlin Guo
发明人： Feng Han , Hui Cheng , Jiangjian Xiao , Harpreet Singh Sawhney , Sang-Hack Jung , Rakesh Kumar , Yanlin Guo
IPC分类号： G06K9/62
CPC分类号： G06K9/00342
摘要： The present invention relates to a method and system for creating a strong classifier based on motion patterns wherein the strong classifier may be used to determine an action being performed by a body in motion. When creating the strong classifier, action classification is performed by measuring similarities between features within motion patterns. Embodiments of the present invention may utilize candidate part-based action sets and training samples to train one or more weak classifiers that are then used to create a strong classifier.
摘要翻译：本发明涉及一种用于基于运动模式创建强分类器的方法和系统，其中强分类器可用于确定由运动中的身体执行的动作。当创建强分类器时，通过测量运动模式中的特征之间的相似度来执行动作分类。本发明的实施例可以利用基于候选部分的动作集和训练样本来训练一个或多个弱分类器，然后将其用于创建强分类器。

23. 发明授权

US08581029B2 Genetic loci associated with Fusarium solani tolerance in soybean 有权
标题翻译：与大豆镰刀菌耐药性相关的遗传基因座
公开(公告)号：US08581029B2
公开(公告)日：2013-11-12
申请号：US13594309
申请日：2012-08-24
申请人： Hong Lu , Feng Han , Scott Sebastian , Donald Kyle , Paul Stephens , Thomas C. Corbin , Jeffrey Thompson
发明人： Hong Lu , Feng Han , Scott Sebastian , Donald Kyle , Paul Stephens , Thomas C. Corbin , Jeffrey Thompson
IPC分类号： A01H1/00 , A01H5/00 , A01H1/02 , C12N5/04
CPC分类号： C12Q1/6895 , A01H1/04 , A01H5/10 , C12N15/8282 , C12Q2600/13 , C12Q2600/156
摘要： The invention relates to methods and compositions for identifying soybean plants that are tolerant, have improved tolerance or are susceptible to Fusarium solani infection (the causative agent of sudden death syndrome or SDS). The methods use molecular genetic markers to identify, select and/or construct disease-tolerant plants or identify and counterselect disease-susceptible plants. Soybean plants that display tolerance or improved tolerance to Fusarium solani infection that are generated by the methods of the invention are also a feature of the invention.
摘要翻译：本发明涉及用于鉴定耐受性好，具有改善的耐受性或易受镰孢镰刀菌感染（猝死综合征或SDS的致病因子）的大豆植物的方法和组合物。该方法使用分子遗传标记来鉴定，选择和/或构建耐病植物或识别并对抗疾病敏感植物。通过本发明的方法产生的显示对茄病菌感染的耐受性或改善的耐受性的大豆植物也是本发明的一个特征。

24. 发明申请

US20130165101A1 METHOD FOR FEATURE ACTIVATION OF MACHINE TYPE COMMUNICATION AND MTC DEVICE THEREOF 审中-公开
标题翻译：机器类型通信特征激活方法及其MTC设备
公开(公告)号：US20130165101A1
公开(公告)日：2013-06-27
申请号：US13819509
申请日：2011-08-24
申请人： Feng Han , Wu Zheng , Kaibin Zhang , Qun Zhao
发明人： Feng Han , Wu Zheng , Kaibin Zhang , Qun Zhao
IPC分类号： H04W52/02
CPC分类号： H04W76/27 , H04W4/70 , H04W76/28 , H04W84/18 , Y02D70/00 , Y02D70/1262 , Y02D70/21 , Y02D70/24
摘要： The present disclosure provides a novel method for feature activation in the Machine Type Communication and a device thereof. According to the present disclosure, the MTC device may actively trigger entry into or exit from a feature state of the MTC device, and inform the network to perform suitable configuration, so as to meet the requirements of the MTC scenario and optimize the network performance. Furthermore, for the Extra Low Power Consumption feature, it is also proposed to set a MTC device specific DRX cycle as its actual cycle such that the actual cycle may be not limited by the system default DRX configuration information. Therefore, power consumption for the MTC device in the Extra Low Power Consumption state may be reduced.
摘要翻译：本公开提供了一种用于机器类型通信中的特征激活的新颖方法及其装置。根据本公开，MTC设备可以主动触发进入或退出MTC设备的特征状态，并通知网络执行合适的配置，以满足MTC场景的要求并优化网络性能。此外，对于超低功耗特征，还提出将MTC设备专用DRX周期设置为其实际周期，使得实际周期不受系统默认DRX配置信息的限制。因此，可以减少超低功耗状态下的MTC设备的功耗。

25. 发明申请

US20130092981A1 SIGE HBT HAVING A POSITION CONTROLLED EMITTER-BASE JUNCTION 审中-公开
标题翻译： SIGE HBT具有位置控制的发射器基座接点
公开(公告)号：US20130092981A1
公开(公告)日：2013-04-18
申请号：US13613151
申请日：2012-09-13
申请人： Feng Han , Donghua Liu , Jun Hu , Wenting Duan , Jing Shi
发明人： Feng Han , Donghua Liu , Jun Hu , Wenting Duan , Jing Shi
IPC分类号： H01L29/737
CPC分类号： H01L29/0817 , H01L29/1004 , H01L29/165 , H01L29/66242 , H01L29/7375
摘要： A SiGe HBT having a position controlled emitter-base junction is disclosed. The SiGe HBT includes: a collector region formed of an N-doped active region; a base region formed on the collector region and including a base epitaxial layer, the base epitaxial layer including a SiGe layer and a capping layer formed thereon, the SiGe layer being formed of a SiGe epitaxial layer doped with a P-type impurity, the capping layer being doped with an N-type impurity; and an emitter region formed on the base region, the emitter region being formed of polysilicon. By optimizing the distribution of impurities doped in the base region, a controllable position of the emitter-base junction and adjustability of the reverse withstanding voltage thereof can be achieved, and thereby increasing the stability of the process and improving the uniformity within wafer.
摘要翻译：公开了具有位置控制的发射极 - 基极结的SiGe HBT。 SiGe HBT包括：由N掺杂的有源区形成的集电极区域; 基底区域，形成在集电极区域上并且包括基底外延层，所述基底外延层包括SiGe层和形成在其上的覆盖层，所述SiGe层由掺杂有P型杂质的SiGe外延层形成，所述封盖层掺杂有N型杂质; 以及形成在所述基极区上的发射极区域，所述发射极区域由多晶硅形成。通过优化掺杂在基极区域中的杂质的分布，可以实现发射极 - 基极结的可控位置和其反向耐压的可调节性，从而提高了工艺的稳定性并提高了晶片内的均匀性。

26. 发明授权

US08391592B2 System and method for detection of multi-view/multi-pose objects 有权
标题翻译：用于检测多视点/多姿态对象的系统和方法
公开(公告)号：US08391592B2
公开(公告)日：2013-03-05
申请号：US13134885
申请日：2011-06-20
申请人： Feng Han , Ying Shan , Harpreet Singh Sawhney , Rakesh Kumar
发明人： Feng Han , Ying Shan , Harpreet Singh Sawhney , Rakesh Kumar
IPC分类号： G06K9/62
CPC分类号： G06K9/6256
摘要： The present invention provides a computer implemented process for detecting multi-view multi-pose objects. The process comprises training of a classifier for each intra-class exemplar, training of a strong classifier and combining the individual exemplar-based classifiers with a single objective function. This function is optimized using the two nested AdaBoost loops. The first loop is the outer loop that selects discriminative candidate exemplars. The second loop, the inner loop selects the discriminative candidate features on the selected exemplars to compute all weak classifiers for a specific position such as a view/pose. Then all the computed weak classifiers are automatically combined into a final classifier (strong classifier) which is the object to be detected.
摘要翻译：本发明提供了一种用于检测多视点多姿态对象的计算机实现过程。该过程包括针对每个类内样本的分类器的训练，强分类器的训练和将单个基于样本的分类器与单个目标函数组合。使用两个嵌套的AdaBoost循环来优化此功能。第一个循环是选择区分候选样本的外循环。第二个循环，内循环选择所选样本上的鉴别候选特征，以计算特定位置（例如视图/姿态）的所有弱分类器。然后将所有计算的弱分类器自动组合成最终分类器（强分类器），该分类器是要检测的对象。

27. 发明申请

US20130023766A1 METHOD AND X-RAY DEVICE FOR TEMPORAL UP-TO-DATE REPRESENTATION OF A MOVING SECTION OF A BODY, COMPUTER PROGRAM PRODUCT AND DATA CARRIER 审中-公开
标题翻译：方法和X射线装置，用于对身体，计算机程序产品和数据载体的移动部分进行时间上的更新
公开(公告)号：US20130023766A1
公开(公告)日：2013-01-24
申请号：US13554435
申请日：2012-07-20
申请人： Jing Feng Han , Matthias John
发明人： Jing Feng Han , Matthias John
IPC分类号： A61B6/02 , A61B8/13
CPC分类号： A61B6/487 , A61B6/4441 , A61B6/488 , A61B6/503 , A61B6/504 , A61B6/5235 , A61B6/5247 , A61B6/5264 , A61B8/0883 , A61B8/0891 , A61B8/12 , A61B8/4254 , A61B8/483 , A61B8/5261 , A61B8/5276 , A61B2034/2051 , A61B2090/364 , A61B2090/376 , A61B2090/378
摘要： A computer-implemented method for temporal up-to-date representation of a moving section of a body is provided. A first x-ray image data record is provided containing the moving section in a specific movement phase and a first 2D x-ray image and a 3D x-ray image superimposed and registered with one another. 2D x-ray images are repeatedly recorded each containing the moving section. 3D ultrasound images are repeatedly recorded each containing the moving section. Extended 2D x-ray images are created from the 2D x-ray images using the first x-ray images data record. The 3D ultrasound images are used as intermediaries for movement correction. The extended 2D images are displayed.
摘要翻译：提供了一种用于体内移动部分的时间最新表示的计算机实现的方法。提供第一x射线图像数据记录，其包含在特定移动阶段中的移动部分和彼此叠加和注册的第一2D X射线图像和3D X射线图像。重复记录每个包含移动部分的2D x射线图像。重复记录每个含有移动部分的3D超声图像。使用第一x射线图像数据记录从2D X射线图像创建扩展的2D X射线图像。 3D超声图像用作运动校正的中介。显示扩展的2D图像。

28. 发明授权

US08278501B2 Genetic loci associated with fusarium solani tolerance in soybean 有权
标题翻译：与大豆镰刀菌耐药性相关的遗传基因座
公开(公告)号：US08278501B2
公开(公告)日：2012-10-02
申请号：US13025195
申请日：2011-02-11
申请人： Hong Lu , Feng Han , Scott Sebastian , Donald Kyle , Paul Stephens , Thomas C. Corbin , Jeffrey Thompson
发明人： Hong Lu , Feng Han , Scott Sebastian , Donald Kyle , Paul Stephens , Thomas C. Corbin , Jeffrey Thompson
IPC分类号： A01H1/00 , A01H1/02 , A01H5/00 , C12N5/04
CPC分类号： C12Q1/6895 , A01H1/04 , A01H5/10 , C12N15/8282 , C12Q2600/13 , C12Q2600/156
摘要： The invention relates to methods and compositions for identifying soybean plants that are tolerant, have improved tolerance or are susceptible to Fusarium solani infection (the causative agent of sudden death syndrome or SDS). The methods use molecular genetic markers to identify, select and/or construct disease-tolerant plants or identify and counterselect disease-susceptible plants. Soybean plants that display tolerance or improved tolerance to Fusarium solani infection that are generated by the methods of the invention are also a feature of the invention.
摘要翻译：本发明涉及用于鉴定耐受性好，具有改善的耐受性或易受镰孢镰刀菌感染（猝死综合征或SDS的致病因子）的大豆植物的方法和组合物。该方法使用分子遗传标记来鉴定，选择和/或构建耐病植物或识别并对抗疾病敏感植物。通过本发明的方法产生的显示对茄病菌感染的耐受性或改善的耐受性的大豆植物也是本发明的一个特征。

29. 发明申请

US20120202509A1 METHOD AND APPARATUS FOR ALLOCATING RANGING CODES IN COMMUNICATION SYSTEM 审中-公开
标题翻译：通信系统中分配标识码的方法和装置
公开(公告)号：US20120202509A1
公开(公告)日：2012-08-09
申请号：US13367868
申请日：2012-02-07
申请人： Shuang Feng HAN , Su-Ryong JEONG , Chi-Woo LIM
发明人： Shuang Feng HAN , Su-Ryong JEONG , Chi-Woo LIM
IPC分类号： H04W72/04
CPC分类号： H04W74/008 , H04W72/082
摘要： A method of allocating ranging codes by a macro base station in a communication system is provided. The method includes broadcasting information related to adjacent femto base stations, receiving a ranging request including class information indicating a degree of a strength of interference of an adjacent macro base station from a terminal, and allocating one of ranging codes included in a code subset dedicated to a corresponding class to the terminal, the ranging codes being allocatable to only terminals in a class indicated by the class information.
摘要翻译：提供了一种在通信系统中由宏基站分配测距码的方法。该方法包括：广播与相邻毫微微基站相关的信息，从终端接收包括指示相邻宏基站的干扰强度的类别信息的测距请求，以及分配专用于与终端相对应的类，测距码只能分配给类信息所指示的类中的终端。

30. 发明授权

US08178409B2 Semiconductor device with alternately arranged P-type and N-type thin semiconductor layers and method for manufacturing the same 有权
标题翻译：具有交替排列的P型和N型薄型半导体层的半导体器件及其制造方法
公开(公告)号：US08178409B2
公开(公告)日：2012-05-15
申请号：US12832963
申请日：2010-07-08
申请人： Shengan Xiao , Feng Han
发明人： Shengan Xiao , Feng Han
IPC分类号： H01L29/15 , H01L21/336
CPC分类号： H01L29/7802 , H01L21/2256 , H01L29/0634 , H01L29/086 , H01L29/66712
摘要： The invention is related to a semiconductor device with alternately arranged P-type and N-type thin semiconductor layers and method for manufacturing the same. For P-type device, the method includes trench formation, thermal oxide formation on trench sidewalls, N-type silicon formation in trenches, N-type impurity diffusion through thermal oxide into P-type epitaxial layer, oxidation of N-type silicon in trenches and oxide removal. In the semiconductor device, N-type thin semiconductor layers are formed by N-type impurity diffusion through oxide to P-type epitaxial layers, and trenches are filled with oxide. With this method, relatively low concentration impurity in high voltage device can be realized by current mass production process, and the device development cost and manufacturing cost are decreased.
摘要翻译：本发明涉及具有交替排列的P型和N型薄型半导体层的半导体器件及其制造方法。对于P型器件，该方法包括沟槽形成，沟槽侧壁上的热氧化物形成，沟槽中的N型硅形成，通过热氧化物的N型杂质扩散到P型外延层中，沟槽中的N型硅的氧化和氧化物去除。在半导体装置中，N型薄型半导体层通过氧化物的N型杂质扩散形成P型外延层，并且沟槽填充有氧化物。通过这种方法，可以通过当前的大规模生产过程实现高压装置中相对低浓度的杂质，并且降低了器件开发成本和制造成本。

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