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21. 发明申请

US20070206651A1 Light Emitting Diode Structure 有权
标题翻译：发光二极管结构
公开(公告)号：US20070206651A1
公开(公告)日：2007-09-06
申请号：US11744226
申请日：2007-05-04
申请人： Tzong-Liang Tsai , Chi-Shen Lee , Ting-Kai Huang
发明人： Tzong-Liang Tsai , Chi-Shen Lee , Ting-Kai Huang
IPC分类号： H01S5/00
CPC分类号： H01L33/14 , H01L29/2003 , H01L33/02 , H01L33/32
摘要： Disclosed is a light emitting diode structure including a Constructive Oxide Contact Structure contact layer. The light emitting diode structure comprises a substrate, a buffer layer formed on the substrate, a lower confinement layer formed on the buffer layer, a light emitting layer formed on the lower confinement layer, an upper confinement layer formed on the light emitting layer, a Constructive Oxide Contact Structure contact layer formed on the upper confinement layer whose conducting type can be P-type, N-type, or I-type, a first electrode, and a second electrode (transparent electrode). The transparent electrode is formed on the Constructive Oxide Contact Structure contact layer as an anode of the light emitting diode. The first electrode is formed on the lower confinement layer and is spaced apart from the light emitting layer, the upper confinement layer, the contact layer, and the transparent electrode. The first electrode is used as a cathode of the light emitting diode.
摘要翻译：公开了包括构造氧化物接触结构接触层的发光二极管结构。发光二极管结构包括衬底，形成在衬底上的缓冲层，形成在缓冲层上的下限制层，形成在下限制层上的发光层，形成在发光层上的上约束层，形成在导电型可以是P型，N型或I型的上部限制层上的构造性氧化物接触结构接触层，第一电极和第二电极（透明电极）。透明电极形成在作为发光二极管的阳极的构造氧化物接触结构接触层上。第一电极形成在下限制层上并与发光层，上约束层，接触层和透明电极间隔开。第一电极用作发光二极管的阴极。

22. 发明申请

US20070034834A1 Compound, phosphor composition and light-emitting device containing the same 审中-公开
标题翻译：化合物，荧光体组合物和含有它们的发光装置
公开(公告)号：US20070034834A1
公开(公告)日：2007-02-15
申请号：US11164018
申请日：2005-11-07
申请人： Yu-Huan Liu , Ru-Shi Liu , Yi-Shan Lin , Chuen-Ming Gee , Ching-Jang Lin , Biing-Jyh Weng , Tzong-Liang Tsai , Tzer-Perng Chen
发明人： Yu-Huan Liu , Ru-Shi Liu , Yi-Shan Lin , Chuen-Ming Gee , Ching-Jang Lin , Biing-Jyh Weng , Tzong-Liang Tsai , Tzer-Perng Chen
IPC分类号： H01J63/04 , H01J1/62
CPC分类号： C09K11/7734 , C09K11/0883 , H01L33/502
摘要： A compound represented by the following formula: SrxMyAlzSi12−zN16−zO2+z wherein, M is selected from the group consisting of rare earth elements and yttrium, x>0, y>0, x+y=2, and 0≦z≦5. The compound may be used as a phosphor. It emits a visible light upon being excited by a blue light and/or an ultra-violet light. When M is Eu, the compound emits a yellow-green light upon being excited by a blue light and/or an ultra-violet light.
摘要翻译：由下式表示的化合物：<？in-line-formula description =“In-line Formulas”end =“lead”？> Sr M α2-z N 2 -Z 2 -Z 2 -Z-α-in-line-formula description =“ 其中，M选自稀土元素和钇，x> 0，y> 0，x + y = 2，0 <= z <= 5 。该化合物可以用作荧光体。当被蓝光和/或紫外线激发时，它发出可见光。当M为Eu时，由蓝色光和/或紫外线激发时，该化合物发出黄绿色光。

23. 发明申请

US20060186417A1 Light emitting diode and method making the same 有权
公开(公告)号：US20060186417A1
公开(公告)日：2006-08-24
申请号：US11316437
申请日：2005-12-22
申请人： Tzong-Liang Tsai , Chih-Li Chiang , Chih-Sung Chang , Way-Jze Wen
发明人： Tzong-Liang Tsai , Chih-Li Chiang , Chih-Sung Chang , Way-Jze Wen
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/32 , H01L33/40 , H01L33/42
摘要： A light emitting diode and the method of the same are provided. The light emitting diode includes a light emitting structure and a metal reflective layer. The light emitting structure includes two semiconductor layers and an active layer. Oxide elements are added into the metal reflective layer to improve the adhesion between the reflective layer and the light emitting structure. Additionally, a transparent contact layer can be formed between the light emitting structure and the reflective layer in order to enhance the luminance efficiency.

24. 发明申请

US20050253129A1 Light emitting diode with enhanced luminance and method for manufacturing the same 审中-公开
标题翻译：具有增强亮度的发光二极管及其制造方法
公开(公告)号：US20050253129A1
公开(公告)日：2005-11-17
申请号：US10949456
申请日：2004-09-23
申请人： Tzong-Liang Tsai , Chih-Sung Chang , Wei-Chih Wen , Tzer-Perng Chen
发明人： Tzong-Liang Tsai , Chih-Sung Chang , Wei-Chih Wen , Tzer-Perng Chen
IPC分类号： H01L29/06 , H01L33/00 , H01L33/46
CPC分类号： H01L33/46 , H01L33/0079
摘要： A light emitting diode with enhanced luminance and a method for manufacturing the light emitting diode are provided. The light emitting diode includes a substrate, a passivation layer including a material selected from a group consisting of a metal alloy, a metal oxide, a metal nitride, organic materials, inorganic materials and a combination thereof, a reflection layer, a first semiconductor layer, a multi-layer quantum well structure and a second semiconductor layer. The substrate possesses excellent electric/thermal conductivities.
摘要翻译：提供具有增强亮度的发光二极管和制造发光二极管的方法。发光二极管包括基板，包括选自金属合金，金属氧化物，金属氮化物，有机材料，无机材料及其组合的材料的钝化层，反射层，第一半导体层，多层量子阱结构和第二半导体层。该基板具有优异的电/热导率。

25. 发明授权

US06894323B2 Group III nitride semiconductor device and its method of manufacture 有权
标题翻译： III族氮化物半导体器件及其制造方法
公开(公告)号：US06894323B2
公开(公告)日：2005-05-17
申请号：US10791710
申请日：2004-03-04
申请人： Tzong-Liang Tsai , Chih-Sung Chang
发明人： Tzong-Liang Tsai , Chih-Sung Chang
IPC分类号： C30B25/02 , C30B29/40 , H01L21/20 , H01L21/205 , H01L29/20 , H01L31/0304 , H01L31/18 , H01L33/00 , H01L33/12 , H01L33/16 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC分类号： H01L33/007 , C30B25/02 , C30B29/40 , H01L21/02381 , H01L21/02458 , H01L21/02488 , H01L21/02491 , H01L21/02505 , H01L21/02513 , H01L21/0254 , H01L29/2003 , H01L31/03046 , H01L31/1852 , H01L33/12 , H01L33/16 , Y02E10/544 , Y02P70/521
摘要： Disclosed is a Group III nitride semiconductor device comprising a stress-absorbing layer having: an amorphous silicon nitride layer, an aluminum interlayer, an amorphous aluminum nitride pre-layer and a polycrystalline Group III nitride layer containing aluminum. The stress-absorbing layer is located between a silicon substrate and a Group III nitride semiconductor, for alleviating stress resulted from different lattice constants between the Group III nitride substance and the silicon substrate, thereby preventing cracking of the Group III nitride semiconductor due to the stress. Further disclosed is a method of manufacturing Group III nitride semiconductor device.
摘要翻译：公开了一种III族氮化物半导体器件，其包括具有非晶氮化硅层，铝中间层，无定形氮化铝预浸层和含有铝的多晶III族氮化物层的应力吸收层。应力吸收层位于硅衬底和III族氮化物半导体之间，用于减轻由III族氮化物物质和硅衬底之间的不同晶格常数引起的应力，从而防止由于应力引起的III族氮化物半导体的开裂。进一步公开了制造III族氮化物半导体器件的方法。

26. 发明申请

US20050093002A1 Light emitting diode device and manufacturing method 失效
标题翻译：发光二极管器件及其制造方法
公开(公告)号：US20050093002A1
公开(公告)日：2005-05-05
申请号：US10695807
申请日：2003-10-30
申请人： Tzong-Liang Tsai , Chih-Sung Chang , Chih-Li Chiang , Tzer-Perng Chen
发明人： Tzong-Liang Tsai , Chih-Sung Chang , Chih-Li Chiang , Tzer-Perng Chen
IPC分类号： H01L27/15 , H01L33/38 , H01L33/42
CPC分类号： H01L33/387 , H01L33/42
摘要： A light emitting diode device and method of manufacturing comprises a light-transmission conductive layer and a patterned transparent conductive layer. In accordance with the present invention, the light-transmission conductive layer and the patterned transparent conductive layer is spread optimal area above the LED device so as to enhance the transparency and ohmic property of LED device.
摘要翻译：发光二极管器件及其制造方法包括透光导电层和图案化的透明导电层。根据本发明，透光导电层和图案化的透明导电层在LED器件上方扩展到最佳区域，以提高LED器件的透明度和欧姆性能。

27. 发明授权

US06781160B1 Semiconductor light emitting device and method for manufacturing the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US06781160B1
公开(公告)日：2004-08-24
申请号：US10603378
申请日：2003-06-24
申请人： Tzong-Liang Tsai , Chih-Sung Chang , Tzer-Perng Chen
发明人： Tzong-Liang Tsai , Chih-Sung Chang , Tzer-Perng Chen
IPC分类号： H01L2922
CPC分类号： H01L33/22
摘要： A semiconductor light emitting device and a method for manufacturing the same are disclosed. The semiconductor comprises a light scattering-deflecting layer located on a semiconductor layer having a scraggly surface. Light is deflected due to the difference of refractive index when the light enters the semiconductor layer from the light scattering-deflecting layer, and the light scatters when the light enters the scraggly surface of the semiconductor layer, thereby enabling the semiconductor light emitting device to emit more light so as to increase the light emitting efficiency of the semiconductor light emitting device.
摘要翻译：公开了一种半导体发光器件及其制造方法。该半导体包括位于具有划痕表面的半导体层上的光散射偏转层。当光从光散射偏转层进入半导体层时，光由于折射率的差异而偏转，并且当光进入半导体层的锯齿状表面时，光散射，从而使得半导体发光器件能够发射更多的光以增加半导体发光器件的发光效率。

28. 发明授权

US06774410B2 Epitaxial growth of nitride semiconductor device 有权
标题翻译：氮化物半导体器件的外延生长
公开(公告)号：US06774410B2
公开(公告)日：2004-08-10
申请号：US10292712
申请日：2002-11-13
申请人： Chih-Sung Chang , Tzong-Liang Tsai
发明人： Chih-Sung Chang , Tzong-Liang Tsai
IPC分类号： H01L2906
CPC分类号： H01L33/12 , C30B25/02 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/02458 , H01L21/02505 , H01L21/02513 , H01L21/0254 , H01L21/0262 , H01L33/007 , H01L33/16
摘要： The present invention provides a semiconductor device with reducing dislocation density. The semiconductor device includes multiple nucleuses between a substrate and an AlGaInN compound semiconductor. The dislocation density that is induced by crystal lattice differences between the substrate and the AlGaInN compound semiconductor is significantly reduced and the growth of the AlGaInN compound semiconductor is improved.
摘要翻译：本发明提供了具有降低位错密度的半导体器件。半导体器件包括在衬底和AlGaInN化合物半导体之间的多个核。由Al衬底和AlGaInN化合物半导体之间的晶格差异引起的位错密度显着降低，AlGaInN化合物半导体的生长提高。

29. 发明授权

US06441403B1 Semiconductor device with roughened surface increasing external quantum efficiency 有权
标题翻译：具有粗糙表面的半导体器件增加了外部量子效率
公开(公告)号：US06441403B1
公开(公告)日：2002-08-27
申请号：US09688605
申请日：2000-10-14
申请人： Chih-Sung Chang , Tzong-Liang Tsai , Chung-Ying Chang
发明人： Chih-Sung Chang , Tzong-Liang Tsai , Chung-Ying Chang
IPC分类号： H01L3300
CPC分类号： H01L33/22 , H01L33/32
摘要： The present invention provides a semiconductor device with a roughened surface that increases external quantum efficiency thereof. Roughening of the semiconductor device surface is done by epitaxial growth techniques that may include hydride vapor phase epitaxy (HVPE) technique, organometallic vapor phase epitaxy (OMVPE) technique, or molecular beam epitaxy (MBE) technique.
摘要翻译：本发明提供一种具有增加其外部量子效率的粗糙表面的半导体器件。半导体器件表面的粗化通过外延生长技术进行，其可以包括氢化物气相外延（HVPE）技术，有机金属气相外延（OMVPE）技术或分子束外延（MBE）技术。

30. 发明授权

US08362505B2 Optical device and the forming method thereof 有权
标题翻译：光学装置及其形成方法
公开(公告)号：US08362505B2
公开(公告)日：2013-01-29
申请号：US12408795
申请日：2009-03-23
申请人： Tzong-Liang Tsai , Lin-Chieh Kao , Shu-Ying Yang
发明人： Tzong-Liang Tsai , Lin-Chieh Kao , Shu-Ying Yang
IPC分类号： H01L33/00
CPC分类号： H01L33/10 , H01L33/46
摘要： An optical device is provided which includes a first electrode; a substrate disposed on the first electrode; a multi-layer structure disposed on the substrate, and the multi-layer structure consisted of a plurality of insulating layers with different refractive indices formed alternately; a first conductive semiconductor layer disposed on the substrate to cover the multi-layer structure; an active layer disposed on the first conductive semiconductor layer; a second conductive semiconductor layer disposed on the active layer; a transparent conductive layer disposed on the second conductive semiconductor layer; and a second electrode disposed on the transparent conductive layer, thereby, the multi-layer structure can increase the light reflective effect or anti-reflective effect within the optical device to improve the light emitting-efficiency.
摘要翻译：提供一种光学装置，其包括第一电极; 设置在所述第一电极上的基板; 设置在所述基板上的多层结构，所述多层结构由交替形成的具有不同折射率的多个绝缘层构成; 设置在所述基板上以覆盖所述多层结构的第一导电半导体层; 设置在所述第一导电半导体层上的有源层; 设置在所述有源层上的第二导电半导体层; 设置在所述第二导电半导体层上的透明导电层; 以及设置在透明导电层上的第二电极，由此，多层结构可以增加光学器件内的光反射效果或抗反射效果，以提高发光效率。

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