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21. 发明申请

US20110081766A1 METHOD FOR DOPING A SELECTED PORTION OF A DEVICE 有权
标题翻译：用于对设备的选定部分进行排序的方法
公开(公告)号：US20110081766A1
公开(公告)日：2011-04-07
申请号：US12572833
申请日：2009-10-02
申请人： Han-Chi Liu , Dun-Nian Yaung , Jen-Cheng Liu , Yuan-Hung Liu
发明人： Han-Chi Liu , Dun-Nian Yaung , Jen-Cheng Liu , Yuan-Hung Liu
IPC分类号： H01L21/762
CPC分类号： H01L27/14683 , H01L21/2652 , H01L21/266 , H01L21/76232 , H01L27/14627 , H01L27/1463
摘要： A method includes forming a protective layer with an opening over a substrate, thereafter implanting a dopant into a substrate region through the opening, the protective layer protecting a different substrate region, and reducing thickness of the protective layer. A different aspect includes etching a substrate to form a recess therein, thereafter implanting a dopant into a substrate region within the recess and through an opening in a protective layer provided over the substrate, and reducing thickness of the protective layer. Another aspect includes forming a protective layer over a substrate, forming photoresist having an opening over the protective layer, etching the protective layer through the opening to expose the substrate, etching the substrate to form a recess in the substrate, implanting a dopant into a substrate portion, the protective layer protecting a different substrate portion thereunder, and etching the protective layer to reduce its thickness.
摘要翻译：一种方法包括在衬底上形成具有开口的保护层，然后通过开口将掺杂剂注入到衬底区域中，保护层保护不同的衬底区域，并减小保护层的厚度。不同的方面包括蚀刻衬底以在其中形成凹陷，然后将掺杂剂注入到凹陷内的衬底区域中，并通过设置在衬底上的保护层中的开口，并且减小保护层的厚度。另一方面包括在衬底上形成保护层，在保护层上形成具有开口的光致抗蚀剂，通过开口蚀刻保护层以暴露衬底，蚀刻衬底以在衬底中形成凹陷，将掺杂剂注入到衬底中保护层保护其下的不同基板部分，并蚀刻保护层以减小其厚度。

22. 发明授权

US06788133B2 Reference voltage providing circuit 失效
标题翻译：参考电压提供电路
公开(公告)号：US06788133B2
公开(公告)日：2004-09-07
申请号：US10336738
申请日：2003-01-06
申请人： Han-Chi Liu , Wen-Cheng Yen
发明人： Han-Chi Liu , Wen-Cheng Yen
IPC分类号： G05F110
CPC分类号： G05F1/10
摘要： A reference voltage providing circuit. The operation amplifier includes a non-reverse input terminal, a reverse input terminal and an output terminal coupled to the reverse input terminal for outputting an output voltage. The reference voltage generator is coupled to the non-reverse input terminal. The loading is coupled to the output terminal. The current source provides a starting current. The switching device is coupled between the current source and the output terminal, and turned on by an accelerating charging signal to pass the starting current to the loading through the first output terminal. The pulse output device outputs the accelerating charging signal.
摘要翻译：参考电压提供电路。运算放大器包括非倒相输入端子，反向输入端子和耦合到反向输入端子的输出端子，用于输出输出电压。参考电压发生器耦合到非反向输入端子。负载耦合到输出端。电流源提供启动电流。开关器件耦合在电流源和输出端之间，并通过加速充电信号导通，以通过第一输出端将启动电流传递到负载。脉冲输出装置输出加速充电信号。

23. 发明授权

US09041841B2 Image sensor having enhanced backside illumination quantum efficiency 有权
标题翻译：具有增强的背面照明量子效率的图像传感器
公开(公告)号：US09041841B2
公开(公告)日：2015-05-26
申请号：US12557154
申请日：2009-09-10
申请人： Yin-Kai Liao , Han-Chi Liu , Yuan-Hung Liu , Dun-Nian Yaung , Jen-Cheng Liu
发明人： Yin-Kai Liao , Han-Chi Liu , Yuan-Hung Liu , Dun-Nian Yaung , Jen-Cheng Liu
IPC分类号： H04N3/14 , H04N5/335 , H01L27/146
CPC分类号： H01L27/14629 , H01L21/76829 , H01L21/76831 , H01L27/14603 , H01L27/14614 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/14636 , H01L27/1464 , H01L27/14645 , H01L27/14683 , H01L27/14685 , H04N3/155
摘要： A system and method for image sensing is disclosed. An embodiment comprises a substrate with a pixel region and a logic region. A first resist protect oxide (RPO) is formed over the pixel region, but not over the logic region. Silicide contacts are formed on the top of active devices formed in the pixel region, but not on the surface of the substrate in the pixel region, and silicide contacts are formed both on the top of active devices and on the surface of the substrate in the logic region. A second RPO is formed over the pixel region and the logic region, and a contact etch stop layer is formed over the second RPO. These layers help to reflect light back to the image sensor when light impinges the sensor from the backside of the substrate, and also helps prevent damage that occurs from overetching.
摘要翻译：公开了一种用于图像感测的系统和方法。实施例包括具有像素区域和逻辑区域的基板。在像素区域上形成第一抗蚀保护氧化物（RPO），但不在逻辑区域上。硅化物接触形成在像素区域中形成的有源器件的顶部上，而不是在像素区域中的衬底的表面上，并且在有源器件的顶部和衬底的表面上形成硅化物接触逻辑区域。在像素区域和逻辑区域上形成第二RPO，并且在第二RPO上形成接触蚀刻停止层。当光从基板的背面入射传感器时，这些层有助于将光反射回图像传感器，并且还有助于防止由过蚀刻引起的损坏。

24. 发明授权

US09029756B2 Optical displacement detection apparatus and optical displacement detection method 有权
标题翻译：光位移检测装置和光学位移检测方法
公开(公告)号：US09029756B2
公开(公告)日：2015-05-12
申请号：US13445639
申请日：2012-04-12
申请人： Hui-Hsuan Chen , Hsin-Chia Chen , Han-Chi Liu , Ching-Lin Chung , Yen-Min Chang
发明人： Hui-Hsuan Chen , Hsin-Chia Chen , Han-Chi Liu , Ching-Lin Chung , Yen-Min Chang
IPC分类号： G09G5/00 , G01B11/00 , G06F3/0354 , G01S7/481 , G01S17/58 , G06F3/03
CPC分类号： G01B11/002 , G01S7/4815 , G01S17/58 , G06F3/0317 , G06F3/0354 , G06F3/03543
摘要： The present invention discloses an optical displacement detection apparatus and an optical displacement detection method. The optical displacement detection apparatus comprises: at least two light sources for projecting light of different spectrums to a surface under detection, respectively; an image capturing device for receiving light reflected from the surface under detection and converting it into electronic signals; and a processing control circuit for calculating displacement according to the electronic signals from the image capturing device, wherein the processing control circuit is capable of switching between the light sources.
摘要翻译：本发明公开了一种光学位移检测装置和光学位移检测方法。光学位移检测装置包括：至少两个光源，用于将不同光谱的光分别投射到被检测的表面; 用于接收从被检测表面反射的光并将其转换为电子信号的图像捕获装置; 以及处理控制电路，用于根据来自图像捕获装置的电子信号计算位移，其中处理控制电路能够在光源之间切换。

25. 发明授权

US07923279B2 Method and structure for reducing cross-talk in image sensor devices 有权
标题翻译：减少图像传感器设备串扰的方法和结构
公开(公告)号：US07923279B2
公开(公告)日：2011-04-12
申请号：US12405454
申请日：2009-03-17
申请人： Ching-Chun Wang , Tzu-Hsuan Hsu , Han-Chi Liu , Chun-Ming Su
发明人： Ching-Chun Wang , Tzu-Hsuan Hsu , Han-Chi Liu , Chun-Ming Su
IPC分类号： H01L21/00
CPC分类号： H01L27/14689 , H01L27/1463 , H01L27/14643
摘要： Provided is a method of fabricating an image sensor device. The method includes providing a semiconductor substrate having a front side and a back side, forming a first isolation structure at the front side of the semiconductor substrate, thinning the semiconductor substrate from the back side, and forming a second isolation structure at the back side of the semiconductor substrate. The first and second isolation structures are shifted with respect to each other.
摘要翻译：提供了一种制造图像传感器装置的方法。该方法包括提供具有前侧和后侧的半导体衬底，在半导体衬底的前侧形成第一隔离结构，从背面减薄半导体衬底，并在第二隔离结构的背面形成第二隔离结构半导体衬底。第一和第二隔离结构相对于彼此移位。

26. 发明授权

US07824948B2 Method and structure for reducing cross-talk in image sensor devices 有权
标题翻译：减少图像传感器设备串扰的方法和结构
公开(公告)号：US07824948B2
公开(公告)日：2010-11-02
申请号：US12357223
申请日：2009-01-21
申请人： Ching-Chun Wang , Tzu-Hsuan Hsu , Han-Chi Liu , Chun-Ming Su
发明人： Ching-Chun Wang , Tzu-Hsuan Hsu , Han-Chi Liu , Chun-Ming Su
IPC分类号： H01L27/14 , H01L33/00
CPC分类号： H01L21/26513 , H01L21/761 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/14634
摘要： Provided is a method of fabricating an image sensor device. The method includes providing a semiconductor substrate having a front side and a back side, forming a first isolation structure at the front side of the semiconductor substrate, thinning the semiconductor substrate from the back side, and forming a second isolation structure at the back side of the semiconductor substrate. The first and second isolation structures are shifted with respect to each other.
摘要翻译：提供了一种制造图像传感器装置的方法。该方法包括提供具有前侧和后侧的半导体衬底，在半导体衬底的前侧形成第一隔离结构，从背面减薄半导体衬底，并在第二隔离结构的背面形成第二隔离结构半导体衬底。第一和第二隔离结构相对于彼此移位。

27. 发明申请

US20100181634A1 METHOD AND STRUCTURE FOR REDUCING CROSS-TALK IN IMAGE SENSOR DEVICES 有权
公开(公告)号：US20100181634A1
公开(公告)日：2010-07-22
申请号：US12357223
申请日：2009-01-21
申请人： Ching-Chun Wang , Tzu-Hsuan Hsu , Han-Chi Liu , Chun-Ming Su
发明人： Ching-Chun Wang , Tzu-Hsuan Hsu , Han-Chi Liu , Chun-Ming Su
IPC分类号： H01L31/02 , H01L21/762 , H01L31/18
CPC分类号： H01L21/26513 , H01L21/761 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/14634
摘要： Provided is a method of fabricating an image sensor device. The method includes providing a semiconductor substrate having a front side and a back side, forming a first isolation structure at the front side of the semiconductor substrate, thinning the semiconductor substrate from the back side, and forming a second isolation structure at the back side of the semiconductor substrate. The first and second isolation structures are shifted with respect to each other.

28. 发明授权

US07516427B2 Input capacitance characterization method in IP library 失效
标题翻译： IP库中的输入电容表征方法
公开(公告)号：US07516427B2
公开(公告)日：2009-04-07
申请号：US11197820
申请日：2005-08-05
申请人： Peter H. Chen , Han-Chi Liu , Chih-Yang Peng , Jyh-Herng Wang , Chia-Nan Hong
发明人： Peter H. Chen , Han-Chi Liu , Chih-Yang Peng , Jyh-Herng Wang , Chia-Nan Hong
IPC分类号： G06F17/50
CPC分类号： G06F17/5036
摘要： A methodology for characterization of an IP (Intellectual Property) component is provided. Digital pins are recognized by skipping analog pins and special IO pins. First two layers of the IP component are classified in response to connection of the input pins. Partial circuits of the IP component are extracted for simulation. Three corners of IP library are generated. Therefore, input capacitance of the IP component is simulated.
摘要翻译：提供了一个用于表征知识产权（知识产权）组件的方法。通过跳过模拟引脚和特殊IO引脚可识别数字引脚。响应于输入引脚的连接，IP组件的前两层被分类。提取IP组件的部分电路进行仿真。生成IP库的三个角落。因此，模拟IP组件的输入电容。

29. 发明申请

US20050123717A1 Sealing of honeycomb core and the honeycomb core assembly made with the same 审中-公开
标题翻译：密封蜂窝芯和蜂窝芯组合制成
公开(公告)号：US20050123717A1
公开(公告)日：2005-06-09
申请号：US10728868
申请日：2003-12-08
申请人： Shyan Shen , Biing-Shann Yu , Han-Chi Liu
发明人： Shyan Shen , Biing-Shann Yu , Han-Chi Liu
IPC分类号： B32B3/12 , B32B5/02 , B32B27/04 , B32B27/38 , B32B27/40
CPC分类号： B32B3/12 , B32B5/02 , B32B27/04 , B32B27/38 , B32B27/40 , B32B2250/40 , B32B2260/021 , B32B2260/046 , B32B2605/18 , B32B2607/00 , Y10T428/1234 , Y10T428/236 , Y10T428/24149
摘要： The invention provides a new sealing process for the RTM of honeycomb structures. A thermoplastic polyurethane film is first heated and adhered on the surface of honeycomb core to seal the cells. Then the general RTM process is conducted and the honeycomb products are finished. The cells with resins filled in are less than 1%. Flatwise tension and three-point bending tests are carried out to verify the bonding between the film and honeycomb core. This honeycomb core sealing can be done in less than forty minutes and the whole RTM process can be much faster than the existing methods.
摘要翻译：本发明为蜂巢结构的RTM提供了新的密封工艺。首先将热塑性聚氨酯膜加热并粘附在蜂窝芯的表面上以密封电池。然后进行通用RTM工艺，蜂窝产品完成。填充树脂的电池小于1％。进行平面张力和三点弯曲试验，以验证膜与蜂窝芯之间的粘结。该蜂窝芯密封可以在不到四十分钟内完成，整个RTM工艺可以比现有的方法快得多。

30. 发明授权

US08440540B2 Method for doping a selected portion of a device 有权
标题翻译：掺杂设备的选定部分的方法
公开(公告)号：US08440540B2
公开(公告)日：2013-05-14
申请号：US12572833
申请日：2009-10-02
申请人： Han-Chi Liu , Dun-Nian Yaung , Jen-Cheng Liu , Yuan-Hung Liu
发明人： Han-Chi Liu , Dun-Nian Yaung , Jen-Cheng Liu , Yuan-Hung Liu
IPC分类号： H01L21/76
CPC分类号： H01L27/14683 , H01L21/2652 , H01L21/266 , H01L21/76232 , H01L27/14627 , H01L27/1463
摘要： A method includes forming a protective layer with an opening over a substrate, thereafter implanting a dopant into a substrate region through the opening, the protective layer protecting a different substrate region, and reducing thickness of the protective layer. A different aspect includes etching a substrate to form a recess therein, thereafter implanting a dopant into a substrate region within the recess and through an opening in a protective layer provided over the substrate, and reducing thickness of the protective layer. Another aspect includes forming a protective layer over a substrate, forming photoresist having an opening over the protective layer, etching the protective layer through the opening to expose the substrate, etching the substrate to form a recess in the substrate, implanting a dopant into a substrate portion, the protective layer protecting a different substrate portion thereunder, and etching the protective layer to reduce its thickness.
摘要翻译：一种方法包括在衬底上形成具有开口的保护层，然后通过开口将掺杂剂注入到衬底区域中，保护层保护不同的衬底区域，并减小保护层的厚度。不同的方面包括蚀刻衬底以在其中形成凹陷，然后将掺杂剂注入到凹陷内的衬底区域中，并通过设置在衬底上的保护层中的开口，并且减小保护层的厚度。另一方面包括在衬底上形成保护层，在保护层上形成具有开口的光致抗蚀剂，通过开口蚀刻保护层以暴露衬底，蚀刻衬底以在衬底中形成凹陷，将掺杂剂注入到衬底中保护层保护其下的不同基板部分，并蚀刻保护层以减小其厚度。

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