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1. 发明授权

US06831499B2 Negative charge pump with bulk biasing 有权
标题翻译：带负电荷的负电荷泵
公开(公告)号：US06831499B2
公开(公告)日：2004-12-14
申请号：US10407615
申请日：2003-04-03
申请人： Giorgio Oddone , Massimiliano Frulio , Luca Figini , Fabio Tassan Caser
发明人： Giorgio Oddone , Massimiliano Frulio , Luca Figini , Fabio Tassan Caser
IPC分类号： G05F110
CPC分类号： H02M3/073 , H02M2003/071 , H02M2003/075 , H02M2003/078
摘要： An n-channel MOS transistor negative-voltage charge pump is disclosed in which the bulks of the n-channel MOS transistors are biased in such a manner as to prevent turning on the parasitic bipolar transistor inherent in the CMOS environment of the charge pump structure.
摘要翻译：公开了一种n沟道MOS晶体管负电压电荷泵，其中n沟道MOS晶体管的体积以这样的方式被偏置，以防止接通电荷泵结构的CMOS环境中固有的寄生双极晶体管。

2. 发明授权

US06825711B2 Power reduction by stage in integrated circuit 有权
标题翻译：集成电路中的功耗降低
公开(公告)号：US06825711B2
公开(公告)日：2004-11-30
申请号：US10249684
申请日：2003-04-30
申请人： John M. Cohn , Kenneth J. Goodnow , Scott W. Gould , Douglas W. Stout , Sebastian T. Ventrone
发明人： John M. Cohn , Kenneth J. Goodnow , Scott W. Gould , Douglas W. Stout , Sebastian T. Ventrone
IPC分类号： G05F110
CPC分类号： G06F1/3296 , G06F1/3203 , Y02D10/172
摘要： An integrated circuit, method and system providing finer granularity dynamic voltage control without performance loss. The invention provides a means for dynamically changing a voltage level of at least one stage on a critical path for a particular cycle. In this way, optimum voltages can be provided to the stages for the given expectation.
摘要翻译：一种集成电路，方法和系统，提供更精细的粒度动态电压控制，无需性能损失。本发明提供了用于在特定周期中动态地改变关键路径上的至少一个级的电压电平的装置。以这种方式，可以为给定期望的阶段提供最佳电压。

3. 发明授权

US06819163B1 Switched capacitor voltage reference circuits using transconductance circuit to generate reference voltage 失效
标题翻译：开关电容电压参考电路采用跨导电路产生参考电压
公开(公告)号：US06819163B1
公开(公告)日：2004-11-16
申请号：US10401082
申请日：2003-03-27
申请人： Bernard Robert Gregoire, Jr.
发明人： Bernard Robert Gregoire, Jr.
IPC分类号： G05F110
CPC分类号： G05F3/262
摘要： A switched capacitor voltage reference circuit that has a transconductance circuit that receives the output of the amplifier, and then outputs a current that depends on its input voltage. This may be accomplished using a charge pump that is controlled by the amplifier output. The transconductance circuit provides a reference voltage at the output terminal of the switched capacitor generation circuit. A capacitor capacitively couples the output terminal of the switched capacitor circuit to the inverting terminal of the amplifier during the generation phase. By adjusting the capacitances of the various capacitors, the level and temperature dependence of the generated reference voltage may be controlled. Also, the charge pump often allows for reference voltages that are greater than the supply voltage.
摘要翻译：具有跨导电路的开关电容器电压参考电路，其接收放大器的输出，然后输出取决于其输入电压的电流。这可以使用由放大器输出控制的电荷泵来实现。跨导电路在开关电容器生成电路的输出端提供参考电压。电容器在生成阶段将开关电容电路的输出端子电容耦合到放大器的反相端子。通过调整各种电容器的电容，可以控制所产生的参考电压的电平和温度依赖性。此外，电荷泵通常允许大于电源电压的参考电压。

4. 发明授权

US06812775B2 Boosting voltage control circuit 有权
公开(公告)号：US06812775B2
公开(公告)日：2004-11-02
申请号：US10615046
申请日：2003-07-08
申请人： Sung Whan Seo
发明人： Sung Whan Seo
IPC分类号： G05F110
CPC分类号： H02M3/073 , H02M2003/077
摘要： Disclosed is a boosting voltage control circuit. A reference voltage for comparing the boosting voltage is generated using a trim bit. Further, the dropped boosting voltage and the reference voltage are compared. Therefore, the boosted voltage is kept to be a given level in a normal operation of the device as well as its read operation.

5. 发明授权

US06812774B2 Method and apparatus for generating a high voltage 有权
公开(公告)号：US06812774B2
公开(公告)日：2004-11-02
申请号：US10445805
申请日：2003-05-28
申请人： Gyu-Hong Kim
发明人： Gyu-Hong Kim
IPC分类号： G05F110
CPC分类号： H02M3/073 , H02M2003/078
摘要： A method and apparatus for generating a high voltage in a device includes a boosting means that precharges a first node, a second node and a substrate voltage of a charge transfer transistor. The charge transfer transistor may perform a charge sharing operation between the first node and a high voltage generating terminal based on a voltage at the second node. The first node may be boosted to a first voltage, and the substrate voltage may be increased based on a voltage at the high voltage generating terminal. The second node may be boosted to a second voltage different than the first voltage, and the substrate voltage may be increased based on a voltage at the high voltage generating terminal. The substrate voltage may also be increased based on changes to the first voltage of the first node that occur during the charge sharing operation.

6. 发明授权

US06809579B2 Blocking mechanism to reduce leakage current 失效
标题翻译：阻塞机理，减少漏电流
公开(公告)号：US06809579B2
公开(公告)日：2004-10-26
申请号：US10384231
申请日：2003-03-06
申请人： Ivan Vandewege
发明人： Ivan Vandewege
IPC分类号： G05F110
CPC分类号： H02M1/32 , H02H9/08
摘要： An electronic device of one embodiment of the invention is disclosed which includes one or more wired interconnection points and a blocking mechanism. The one or more wired interconnection points are to interconnect to other electronic devices. The blocking mechanism is situated at the one or more wired interconnect points to reduce leakage current transferred from the other electronic devices over the one or more wired interconnection points.
摘要翻译：公开了本发明的一个实施例的电子设备，其包括一个或多个有线互连点和阻塞机构。一个或多个有线互连点将互连到其他电子设备。阻塞机构位于一个或多个有线互连点处，以减少在一个或多个有线互连点上从其他电子设备传送的泄漏电流。

7. 发明授权

US06809575B2 Temperature-compensated current reference circuit 有权
标题翻译：温度补偿电流参考电路
公开(公告)号：US06809575B2
公开(公告)日：2004-10-26
申请号：US10407622
申请日：2003-04-03
申请人： Giorgio Oddone , Lorenzo Bedarida , Mauro Chinosi
发明人： Giorgio Oddone , Lorenzo Bedarida , Mauro Chinosi
IPC分类号： G05F110
CPC分类号： G05F3/245
摘要： A circuit comprises an amplifier having first output node comprising a first n-channel MOS transistor and a second output node comprising a second n-channel MOS transistor. A first p-channel MOS transistor is coupled to a supply potential, and the second output node. A first PNP bipolar transistor is coupled to the first p-channel MOS transistor through a first resistor and to the second n-channel MOS transistor and to ground. A second PNP bipolar transistor is coupled to the first p-channel MOS transistor through a second resistor in series with a third resistor and to ground. The first n-channel MOS transistor is coupled to a common node between the second and third resistors. A third n-channel MOS transistor is coupled to the first p-channel MOS transistor, to ground through a fourth resistor, and to either a reference potential or to the common node between the second and third resistors.
摘要翻译：一种电路包括具有包括第一n沟道MOS晶体管的第一输出节点和包括第二n沟道MOS晶体管的第二输出节点的放大器。第一p沟道MOS晶体管耦合到电源电位和第二输出节点。第一PNP双极晶体管通过第一电阻器和第二n沟道MOS晶体管耦合到第一p沟道MOS晶体管并接地。第二PNP双极晶体管通过与第三电阻器串联的第二电阻器并接地耦合到第一p沟道MOS晶体管。第一n沟道MOS晶体管耦合到第二和第三电阻之间的公共节点。第三n沟道MOS晶体管被耦合到第一p沟道MOS晶体管，通过第四电阻器接地，并且连接到参考电位或第二和第三电阻器之间的公共节点。

8. 发明授权

US06806763B2 Programmable reference voltage generating circuit 失效
标题翻译：可编程参考电压发生电路
公开(公告)号：US06806763B2
公开(公告)日：2004-10-19
申请号：US10059676
申请日：2002-01-30
申请人： Nam-Seog Kim , Jin-Ho Lee
发明人： Nam-Seog Kim , Jin-Ho Lee
IPC分类号： G05F110
CPC分类号： G05F1/577
摘要： A reference voltage generating circuit includes a binary-to-thermometer for converting binary codes into thermometer codes; an internal reference voltage generator for generating an internal reference voltage in response to the thermometer codes from the binary-to-thermometer, wherein the internal reference voltage generator changes a level of the internal reference voltage in response to the thermometer codes; a selector for selecting the internal reference voltage or an external reference voltage in response to a reference voltage select signal; and a voltage regulator for regulating a reference voltage selected by the selector.
摘要翻译：参考电压产生电路包括用于将二进制码转换成温度计代码的二进制到温度计; 内部参考电压发生器，用于响应于二进制到温度计的温度计代码产生内部参考电压，其中内部参考电压发生器响应于温度计代码改变内部参考电压的电平; 用于响应于参考电压选择信号选择内部参考电压或外部参考电压的选择器; 以及用于调节由选择器选择的参考电压的电压调节器。

9. 发明授权

US06806762B2 Circuit and method to facilitate threshold voltage extraction and facilitate operation of a capacitor multiplier 有权
标题翻译：电路和方法，便于阈值电压提取，便于电容乘法器的运算
公开(公告)号：US06806762B2
公开(公告)日：2004-10-19
申请号：US09977609
申请日：2001-10-15
申请人： Richard Kane Stair , Gabriel A. Rincon-Mora
发明人： Richard Kane Stair , Gabriel A. Rincon-Mora
IPC分类号： G05F110
CPC分类号： G06G7/625
摘要： A system and method to extract a threshold voltage for a MOSFET include first and second stages, which include inputs that receive functionally related input currents, are connected to each other. The first stage includes a second input that is coupled to a corresponding input of the second stage through part of a voltage divider. Another part of the voltage divider is coupled between an internal gate node and the input of the second stage that receives the respective input current. The input of the second stage that receives the respective input current also provides an output voltage substantially equal to the threshold voltage for one or both of the MOSFETs.
摘要翻译：提取用于MOSFET的阈值电压的系统和方法包括包括接收功能相关的输入电流的输入的第一和第二级彼此连接。第一级包括通过分压器的一部分耦合到第二级的相应输入的第二输入。分压器的另一部分耦合在内部栅极节点和接收相应输入电流的第二级的输入之间。接收相应输入电流的第二级的输入还提供基本上等于一个或两个MOSFET的阈值电压的输出电压。

10. 发明授权

US06806761B1 Integrated charge pump circuit with low power voltage regulation 有权
标题翻译：集成的电荷泵电路，具有低功率电压调节功能
公开(公告)号：US06806761B1
公开(公告)日：2004-10-19
申请号：US10427334
申请日：2003-05-01
申请人： Arlo Aude
发明人： Arlo Aude
IPC分类号： G05F110
CPC分类号： H02M3/073 , H02M2003/077
摘要： An integrated charge pump circuit providing a regulated output voltage controlled by a voltage regulator with reduced power requirements in which the charge pump output voltage is a substantially constant multiple of the charge pump input voltage as defined by a voltage ratio which, in turn, is defined as a selected combination of a ratio of conductances of circuit elements within a feedback loop and ratios of other voltages including selected reference voltages and the charge pump input voltage.
摘要翻译：一种集成的电荷泵电路，其提供由电压调节器控制的调节的输出电压，其具有降低的功率要求，其中电荷泵输出电压是电压比例的基本上恒定的倍数，其由电压比定义，电压比又被定义作为反馈环路内的电路元件的电导率与包括所选参考电压的其他电压与电荷泵输入电压的比率的选择组合。

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