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21. 发明授权

US08487923B2 Semiconductor device and driving method thereof, and electronic device 有权
公开(公告)号：US08487923B2
公开(公告)日：2013-07-16
申请号：US12712479
申请日：2010-02-25
申请人： Hajime Kimura
发明人： Hajime Kimura
IPC分类号： G06F3/038
CPC分类号： G09G3/3233 , G09G3/22 , G09G2300/0426 , G09G2300/0819 , G09G2300/0852 , G09G2300/0876 , G09G2310/0251 , G09G2320/0233 , G09G2320/045 , G09G2330/021
摘要： A driving method of a semiconductor device for compensating variation in threshold voltage and mobility of a transistor is provided. A driving method of a semiconductor device including a transistor and a capacitor electrically connected to a gate of the transistor includes a first period where voltage corresponding to threshold voltage of the transistor is held in the capacitor, a second period where a total voltage of video signal voltage and threshold voltage is held in the capacitor holding the threshold voltage, and a third period where charge held in the capacitor in accordance with the total voltage of the video signal voltage and the threshold voltage in the second period is discharged through the transistor.

22. 发明授权

US08482491B2 Light emitting device, method of driving a light emitting device, element substrate, and electronic equipment 有权
公开(公告)号：US08482491B2
公开(公告)日：2013-07-09
申请号：US12190333
申请日：2008-08-12
申请人： Hajime Kimura
发明人： Hajime Kimura
IPC分类号： G09G3/30 , G09G5/00 , G09G5/10 , G06F3/038
CPC分类号： G09G3/3225 , G09G3/2022 , G09G3/3208 , G09G3/3241 , G09G3/3283 , G09G2300/0814 , G09G2300/0842 , G09G2300/0861 , G09G2310/061 , G09G2320/0233 , H01L27/12 , H01L27/1214 , H01L27/3244 , H01L29/42384 , H01L29/4908 , H01L29/66757 , H01L29/78621 , H01L51/5237 , H01L51/524 , H01L51/5253 , H01L51/5259 , H01L2029/7863
摘要： A display device capable of obtaining a constant luminance without being influenced by temperature change is provided as well as a method of driving the display device. A current mirror circuit composed of a first transistor and a second transistor is provided in each pixel. The first transistor and second transistor of the current mirror circuit are connected such that their drain currents are kept almost equal irrespective of the level of load resistance. By controlling the OLED drive current using the current mirror circuit, a change in OLED drive current due to fluctuation in characteristics between transistors is avoided and a constant luminance is obtained without being influenced by temperature change.

23. 发明授权

US08476929B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08476929B2
公开(公告)日：2013-07-02
申请号：US13231997
申请日：2011-09-14
申请人： Hajime Kimura
发明人： Hajime Kimura
IPC分类号： H03K19/173
CPC分类号： H03K3/356121 , G11C19/28
摘要： In the case where data is rewritten in a delay period of a signal in a flip flop and a shift register which use an inverted clock signal, current inhibiting charging may flow, whereby data cannot written quickly, so that charging is not completed, which makes operation unstable. In view of the above, a flip flop and a shift register without using an inverted clock signal, which have high stability are provided. Current inhibiting charging of a node where that current inhibiting charging flows is cut off at the time of rewriting data so that data is rewritten quickly.
摘要翻译：在触发器中的信号的延迟时段和使用反相时钟信号的移位寄存器中重写数据的情况下，可能流动禁止电流，从而数据不能被快速写入，使得充电未完成，这使得操作不稳定。鉴于上述，提供了具有高稳定性的不使用反相时钟信号的触发器和移位寄存器。在重写数据时切断电流抑制充电流动的节点的电流抑制充电，从而快速重写数据。

24. 发明授权

US08456402B2 Semiconductor device, and display device and electronic device utilizing the same 有权
公开(公告)号：US08456402B2
公开(公告)日：2013-06-04
申请号：US13277301
申请日：2011-10-20
申请人： Hajime Kimura , Yutaka Shionoiri
发明人： Hajime Kimura , Yutaka Shionoiri
IPC分类号： G09G3/36
CPC分类号： G09G5/003 , G09G3/36 , G09G2310/0267 , G09G2310/0275 , G09G2310/0286 , G09G2310/0289 , G09G2330/021 , H01L27/124 , H01L27/1255 , H03K19/018507
摘要： A semiconductor device having a normal function means is provided, in which the amplitude of an output signal is prevented from being decreased even when a digital circuit using transistors having one conductivity is employed. By turning OFF a diode-connected transistor 101, the gate terminal of a first transistor 102 is brought into a floating state. At this time, the first transistor 102 is ON and its gate-source voltage is stored in a capacitor. Then, when a potential at the source terminal of the first transistor 102 is increased, a potential at the gate terminal of the first transistor 102 is increased as well by bootstrap effect. As a result, the amplitude of an output signal is prevented from being decreased.

25. 发明授权

US08432502B2 Display device and electronic device including the same 有权
标题翻译：显示装置和包括其的电子装置
公开(公告)号：US08432502B2
公开(公告)日：2013-04-30
申请号：US12957809
申请日：2010-12-01
申请人： Shunpei Yamazaki , Hajime Kimura , Takeshi Nishi
发明人： Shunpei Yamazaki , Hajime Kimura , Takeshi Nishi
IPC分类号： G02F1/136
CPC分类号： G02F1/1368 , G02F2001/13793
摘要： A low-power-consuming display device including a liquid crystal material which exhibits a blue phase is provided. A display device includes a first substrate having a pixel portion in which a pixel including a transistor is provided; a second substrate which faces the first substrate; and a liquid crystal layer between the first substrate and the second substrate; in which the liquid crystal layer includes a liquid crystal material which exhibits a blue phase; a gate of the transistor is electrically connected to a scan line, one of a source and a drain of the transistor is electrically connected to a signal line, and the other of the source and the drain of the transistor is electrically connected to an electrode; and the transistor includes an oxide semiconductor layer a hydrogen concentration of which is 5×1019/cm3 or less.
摘要翻译：提供了包括呈现蓝相的液晶材料的低功耗显示装置。显示装置包括具有像素部分的第一基板，其中提供包括晶体管的像素; 面向所述第一基板的第二基板; 以及在所述第一基板和所述第二基板之间的液晶层; 其中液晶层包括显示蓝相的液晶材料; 晶体管的栅极电连接到扫描线，晶体管的源极和漏极之一电连接到信号线，晶体管的源极和漏极中的另一个电连接到电极; 并且所述晶体管包括氢浓度为5×1019 / cm3以下的氧化物半导体层。

26. 发明授权

US08385682B2 Defective pixel specifying method, defective pixel specifying system, image correcting method, and image correcting system 有权
公开(公告)号：US08385682B2
公开(公告)日：2013-02-26
申请号：US13339694
申请日：2011-12-29
申请人： Hajime Kimura
发明人： Hajime Kimura
IPC分类号： G06K9/40
CPC分类号： H04N9/30
摘要： A defective pixel specifying method and a defective pixel specifying system for a semiconductor device having a defective pixel are provided. Also provided are an image correcting method and an image correcting system for making a defective pixel inconspicuous on the screen when a read image is displayed. The present invention determines whether or not there is a defective pixel for each pixel and specifies the coordinate of the defective pixel using image signals obtained by reading a plurality of images. The image signal of the defective pixel is set based on the image signals of the pixels adjacent to the defective pixel to correct the image of the subject read.

27. 发明授权

US08378356B2 Display device including pixel 有权
标题翻译：显示设备包括像素
公开(公告)号：US08378356B2
公开(公告)日：2013-02-19
申请号：US13267261
申请日：2011-10-06
申请人： Hajime Kimura
发明人： Hajime Kimura
IPC分类号： H01L27/14
CPC分类号： G09G3/3225 , G09G3/3233 , G09G3/3266 , G09G3/3275 , G09G2300/0809 , G09G2300/0814 , G09G2300/0819 , G09G2300/0842 , G09G2300/0852 , G09G2300/0861 , G09G2300/0876 , G09G2310/0251 , G09G2310/027 , G09G2320/0204 , G09G2320/0233 , G09G2320/0252 , G09G2320/043 , G09G2320/045 , G09G2380/02 , H01L27/124 , H01L27/1255 , H01L27/3244 , H01L27/3262 , H01L27/3265 , H01L27/3295 , H01L51/5237 , H01L51/524 , H01L51/5253 , H01L51/5259
摘要： A voltage equal to the threshold value of a TFT (106) is held in capacitor unit (109). When a video signal is inputted from a source signal line, the voltage held in the capacitor unit is added thereto and a resultant signal is applied to a gate electrode of the TFT (106). Even when a threshold value is varied for each pixel, each threshold value is held in the capacitor unit (109) for each pixel. Thus, the influence of a variation in threshold value can be eliminated. Further, holding of the threshold value is conducted by only the capacitor unit (109) and a charge does not move at writing of a video signal so that a voltage between both electrodes is not changed. Thus, it is not influenced by a variation in capacitance value.
摘要翻译：将等于TFT（106）的阈值的电压保持在电容器单元（109）中。当从源极信号线输入视频信号时，将保持在电容器单元中的电压加到其上，并将所得到的信号施加到TFT（106）的栅电极。即使当针对每个像素改变阈值时，对于每个像素，每个阈值被保持在电容器单元（109）中。因此，可以消除阈值变化的影响。此外，通过仅电容器单元（109）进行阈值的保持，并且在写入视频信号时电荷不移动，使得两个电极之间的电压不改变。因此，它不受电容值变化的影响。

28. 发明申请

US20130032806A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20130032806A1
公开(公告)日：2013-02-07
申请号：US13556908
申请日：2012-07-24
申请人： Hajime Kimura
发明人： Hajime Kimura
IPC分类号： H01L27/15
CPC分类号： H01L27/1255 , H05B33/0887
摘要： Adverse effects of variation in threshold voltage are reduced. In a semiconductor device, electric charge is accumulated in a capacitor provided between a gate and a source of a transistor, and then, the electric charge accumulated in the capacitor is discharged; thus, the threshold voltage of the transistor is obtained. After that, current flows to a load. In the semiconductor device, the potential of one terminal of the capacitor is set higher than the potential of a source line, and the potential of the source line is set lower than the potential of a power supply line and the cathode side potential of the load.
摘要翻译：降低阈值电压变化的不利影响。在半导体装置中，电荷蓄积在设置在晶体管的栅极和源极之间的电容器中，然后累积在电容器中的电荷被放电; 从而获得晶体管的阈值电压。之后，电流流向负载。在半导体器件中，将电容器的一个端子的电位设置为高于源极线的电位，并且将源极线的电位设置为低于电源线的电位和负载的阴极侧电位。

29. 发明授权

US08354674B2 Semiconductor device wherein a property of a first semiconductor layer is different from a property of a second semiconductor layer 有权
标题翻译：其中第一半导体层的性质与第二半导体层的性质不同的半导体器件
公开(公告)号：US08354674B2
公开(公告)日：2013-01-15
申请号：US12213036
申请日：2008-06-13
申请人： Hajime Kimura
发明人： Hajime Kimura
IPC分类号： H01L29/00
CPC分类号： H01L27/1251 , H01L27/1214 , H01L27/1266 , H01L27/1292
摘要： It is an object to provide a semiconductor device which has a large size and operates at high speed. A top gate transistor which includes a semiconductor layer of single-crystal and a bottom gate transistor which includes a semiconductor layer of amorphous silicon (microcrystalline silicon) are formed over the same substrate. Then, gate electrodes of each transistor are formed with the same layer, and source and drain electrodes are also formed with the same layer. Thus, manufacturing steps are reduced. In other words, two types of transistors can be manufactured by adding only a few steps to the manufacturing process of a bottom gate transistor.
摘要翻译：本发明的目的是提供一种具有大尺寸并且高速运行的半导体器件。在相同的衬底上形成包括单晶半导体层和包括非晶硅半导体层（微晶硅）的底栅晶体管的顶栅晶体管。然后，每个晶体管的栅电极形成有相同的层，并且源极和漏极也形成有相同的层。因此，制造步骤减少。换句话说，可以通过在底栅晶体管的制造工艺中仅添加几个步骤来制造两种类型的晶体管。

30. 发明申请

US20120327142A1 SEMICONDUCTOR DEVICE, DISPLAY DEVICE, AND ELECTRONIC DEVICE 有权
标题翻译：半导体器件，显示器件和电子器件
公开(公告)号：US20120327142A1
公开(公告)日：2012-12-27
申请号：US13604750
申请日：2012-09-06
申请人： Hajime Kimura
发明人： Hajime Kimura
IPC分类号： G06F3/038 , G09G5/10 , H03K17/00 , G09G3/30
CPC分类号： H01L27/15 , G09G3/3233 , G09G2300/0417 , G09G2300/0809 , G09G2300/0861 , G09G2310/0251 , G09G2320/0295 , G09G2320/043 , H01L27/12 , H01L27/13 , Y10T307/747
摘要： A display device includes a load, a transistor for controlling a current value supplied to the load, a capacitor, a first wiring, a second wiring, and first to fourth switches. Variations in the current value caused by variations in the threshold voltage of the transistor can be suppressed through the steps of: (1) holding the threshold voltage of the transistor in the storage capacitor, (2) inputting a potential in accordance with a video signal, and (3) holding a voltage that is the sum of the threshold voltage and the potential in accordance with the video signal, in the storage capacitor. Accordingly, a desired current can be supplied to the load such as a light emitting element.
摘要翻译：显示装置包括负载，用于控制提供给负载的电流值的晶体管，电容器，第一布线，第二布线和第一至第四开关。可以通过以下步骤来抑制由晶体管的阈值电压的变化引起的电流值的变化：（1）将晶体管的阈值电压保持在存储电容器中，（2）根据视频信号输入电位，和（3）在存储电容器中保持与视频信号相关的阈值电压和电位之和的电压。因此，可以将期望的电流提供给诸如发光元件的负载。

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