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1. 发明授权

US09448432B2 Liquid crystal display device 有权
公开(公告)号：US09448432B2
公开(公告)日：2016-09-20
申请号：US11383286
申请日：2006-05-15
申请人： Shunpei Yamazaki , Shingo Eguchi , Yutaka Shionoiri , Etsuko Fujimoto
发明人： Shunpei Yamazaki , Shingo Eguchi , Yutaka Shionoiri , Etsuko Fujimoto
IPC分类号： G02F1/1335
CPC分类号： G02F1/133555 , G02F1/134309 , G02F1/13439 , G02F1/136227 , G02F1/1368 , G02F2201/123 , H01L27/1255 , H01L29/42384
摘要： It is an object to provide a display having high visibility and a transflective type liquid crystal display device having a reflection electrode having a concavo-convex structure formed without especially increasing the process. During manufacturing a transflective liquid crystal display device, a reflection electrode of a plurality of irregularly arranged island-like patterns and a transparent electrode of a transparent conductive film are layered in forming an electrode having transparent and reflection electrodes thereby having a concavo-convex form to enhance the scattering ability of light and hence the visibility of display. Furthermore, because the plurality of irregularly arranged island-like patterns can be formed simultaneous with an interconnection, a concavo-convex structure can be formed during the manufacturing process without especially increasing the patterning process only for forming a concavo-convex structure. It is accordingly possible to greatly reduce cost and improve productivity.

2. 发明授权

US09123581B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US09123581B2
公开(公告)日：2015-09-01
申请号：US13287569
申请日：2011-11-02
申请人： Toshihiko Saito , Yutaka Shionoiri , Kiyoshi Kato
发明人： Toshihiko Saito , Yutaka Shionoiri , Kiyoshi Kato
IPC分类号： G06K19/06 , H01L27/12 , G06K19/07 , H01L21/84
CPC分类号： H01L27/12 , G06K19/0701 , G06K19/0715 , G06K19/0723 , H01L21/84
摘要： An object of the present invention is to provide a semiconductor device which can obtain the high potential necessary for writing data to a memory, using a small circuit area. In the present invention, by using as input voltage of a booster circuit not the conventionally used output VDD of a regulator circuit 104, but rather an output VDD0 of a rectifier circuit portion 103, which is a higher potential than the VDD, the high potential necessary for writing data to a memory can be obtained with a small circuit area.
摘要翻译：本发明的目的是提供一种使用小电路区域可以获得将数据写入存储器所需的高电位的半导体器件。在本发明中，通过使用升压电路的输入电压而不是调节器电路104的常规使用的输出VDD，而是使用比VDD高的电压的整流电路部分103的输出VDD0，可以以小的电路面积获得将数据写入存储器所必需的。

3. 发明授权

US08854191B2 Semiconductor device and method for operating the same 有权
标题翻译：半导体装置及其操作方法
公开(公告)号：US08854191B2
公开(公告)日：2014-10-07
申请号：US11716042
申请日：2007-03-09
申请人： Shunpei Yamazaki , Jun Koyama , Masato Ishii , Tomoaki Atsumi , Takeshi Osada , Takayuki Ikeda , Yoshiyuki Kurokawa , Yutaka Shionoiri
发明人： Shunpei Yamazaki , Jun Koyama , Masato Ishii , Tomoaki Atsumi , Takeshi Osada , Takayuki Ikeda , Yoshiyuki Kurokawa , Yutaka Shionoiri
IPC分类号： H04Q5/22 , G06K19/07
CPC分类号： G06K19/0723 , G06K19/0701 , G06K19/0702
摘要： To provide a semiconductor device including an RFID which can transmit and receive individual information without checking of the remaining charge of a battery or a replacing operation of the battery in accordance with deterioration over time of the battery for driving, and can maintain an excellent state for transmission and reception of individual information even when power of a radio wave or an electromagnetic wave from outside is insufficient. A battery (also described as a secondary battery) is provided as a power supply for supplying power to the RFID. Then, when power which is obtained from a signal received from outside is larger than predetermined power, its surplus power is stored in the battery; and when the power which is obtained from the signal received from outside is smaller than the predetermined power, power which is obtained from the battery is used for the power for driving.
摘要翻译：为了提供一种包括RFID的半导体器件，其可以根据用于驱动的电池的劣化随时检测电池的剩余电量或电池的替换操作而发送和接收各个信息，并且可以保持优异的状态即使在来自外部的无线电波或电磁波的功率不足的情况下，也可以发送和接收个别信息。提供电池（也称为二次电池）作为向RFID提供电力的电源。然后，当从外部接收的信号获得的功率大于预定功率时，其剩余功率被存储在电池中; 并且当从外部接收的信号获得的功率小于预定功率时，从电池获得的功率用于驱动电力。

4. 发明授权

US08570065B2 Programmable LSI 有权
标题翻译：可编程LSI
公开(公告)号：US08570065B2
公开(公告)日：2013-10-29
申请号：US13437961
申请日：2012-04-03
申请人： Hidetomo Kobayashi , Masami Endo , Yutaka Shionoiri , Hiroki Dembo , Tatsuji Nishijima , Kazuaki Ohshima , Seiichi Yoneda , Jun Koyama
发明人： Hidetomo Kobayashi , Masami Endo , Yutaka Shionoiri , Hiroki Dembo , Tatsuji Nishijima , Kazuaki Ohshima , Seiichi Yoneda , Jun Koyama
IPC分类号： H03K19/177 , G11C11/24
CPC分类号： H03K19/17796 , G11C16/0433 , H01L27/11803 , H01L27/1203
摘要： A low-power programmable LSI that can perform dynamic configuration is provided. The programmable LSI includes a plurality of logic elements. The plurality of logic elements each include a configuration memory. Each of the plurality of logic elements performs different arithmetic processing and changes an electrical connection between the logic elements, in accordance with the configuration data stored in the configuration memory. The configuration memory includes a set of a volatile storage circuit and a nonvolatile storage circuit. The nonvolatile storage circuit includes a transistor whose channel is formed in an oxide semiconductor layer and a capacitor whose one of a pair of electrodes is electrically connected to a node that is set in a floating state when the transistor is turned off.
摘要翻译：提供了可以执行动态配置的低功耗可编程LSI。可编程LSI包括多个逻辑元件。多个逻辑元件各自包括配置存储器。多个逻辑元件中的每一个执行不同的运算处理，并且根据存储在配置存储器中的配置数据改变逻辑元件之间的电连接。配置存储器包括一组易失性存储电路和非易失性存储电路。非易失性存储电路包括其沟道形成在氧化物半导体层中的晶体管和一对电极中的一个电极与晶体管截止时被设置为浮置状态的节点电连接的电容器。

5. 发明授权

US08525585B2 Demodulation circuit and RFID tag including the demodulation circuit 有权
公开(公告)号：US08525585B2
公开(公告)日：2013-09-03
申请号：US13558694
申请日：2012-07-26
申请人： Takanori Matsuzaki , Yutaka Shionoiri
发明人： Takanori Matsuzaki , Yutaka Shionoiri
IPC分类号： H03D1/00
CPC分类号： H03D1/18 , H01L27/1225
摘要： An object is to provide a demodulation circuit having a sufficient demodulation ability. Another object is to provide an RFID tag which uses a demodulation circuit having a sufficient demodulation ability. A material which enables a reverse current to be small enough, for example, an oxide semiconductor material, which is a wide bandgap semiconductor, is used in part of a transistor included in a demodulation circuit. By using the semiconductor material which enables a reverse current of a transistor to be small enough, a sufficient demodulation ability can be secured even when an electromagnetic wave having a high amplitude is received.

6. 发明授权

US08331873B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08331873B2
公开(公告)日：2012-12-11
申请号：US12073615
申请日：2008-03-07
申请人： Yutaka Shionoiri
发明人： Yutaka Shionoiri
IPC分类号： H04Q7/00 , H04B1/38
CPC分类号： G06K19/0723 , G06K19/0701 , G06K19/0715
摘要： In a semiconductor device which can perform data communication through wireless communication, to suppress transmission and the like of an AC signal, the semiconductor device includes an input circuit to which a radio signal is input, a first circuit, which generates a constant voltage, such as a constant voltage circuit or a limiter circuit, a second circuit to which the generated constant voltage is input and which can change impedance of the semiconductor device, and a filter provided between the first circuit and the second circuit. Transmission of an AC signal is suppressed by the filter, and malfunctions or operation defects such as complete inoperative due to variation in the constant voltage is prevented.
摘要翻译：在能够通过无线通信进行数据通信的半导体装置中，为了抑制交流信号的发送等，半导体装置具备输入无线信号的输入电路，产生恒定电压的第一电路，作为恒压电路或限幅电路，输入所产生的恒定电压并能够改变半导体器件的阻抗的第二电路以及设置在第一电路和第二电路之间的滤波器。通过滤波器抑制AC信号的传输，并且防止由于恒定电压的变化而导致的故障或诸如完全不工作的操作缺陷。

7. 发明申请

US20120294067A1 SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING THE SAME 有权
标题翻译：半导体器件及其驱动方法
公开(公告)号：US20120294067A1
公开(公告)日：2012-11-22
申请号：US13472741
申请日：2012-05-16
申请人： Hidetomo KOBAYASHI , Yutaka SHIONOIRI , Tatsuji NISHIJIMA
发明人： Hidetomo KOBAYASHI , Yutaka SHIONOIRI , Tatsuji NISHIJIMA
IPC分类号： G06F9/312 , G11C11/24
CPC分类号： H01L27/1225 , G06F9/3804 , G06F9/3814 , G11C11/404 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L27/1156 , H01L27/1255
摘要： In a semiconductor device performing pipeline processing with the use of a reading portion reading an instruction and an arithmetic portion performing an operation in accordance with the instruction, the instruction held in the reading portion is transmitted from the flip-flop to the memory when branch prediction turns out to be wrong. Note that the arithmetic portion controls transmission and reception of the instruction between the flip-flop and the memory which are included in the reading portion. This enables elimination of redundant operations in the reading portion in the case where an instruction read by the reading portion after the branch prediction turns out to be wrong is a subroutine, or the like. That is, the instruction held in the memory is transmitted back to the flip-flop without rereading of the same instruction by the reading portion, whereby the instruction can be output to the arithmetic portion.
摘要翻译：在利用读取指令的读取部分执行流水线处理的半导体器件和执行根据该指令的操作的算术部分中，当分支预测时，保持在读取部分中的指令从触发器发送到存储器原来是错的。注意，算术部分控制包括在读取部分中的触发器和存储器之间的指令的发送和接收。在分支预测结果为错误的读取部读出的指示是子程序等的情况下，能够消除读取部中的冗余动作。也就是说，保持在存储器中的指令被发送回到触发器，而不用读取部分重新读取相同的指令，从而可以将该指令输出到算术部分。

8. 发明申请

US20120293203A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20120293203A1
公开(公告)日：2012-11-22
申请号：US13471879
申请日：2012-05-15
申请人： Takuro OHMARU , Yutaka SHIONOIRI
发明人： Takuro OHMARU , Yutaka SHIONOIRI
IPC分类号： H03K19/177
CPC分类号： H01L27/105 , H03K19/1776 , H03K19/17764 , H03K19/17772
摘要： A programmable analog device in which data can be held even when supply of a power supply potential is stopped. The programmable circuit includes unit cells connected in parallel or in series, and each of the unit cells includes an analog element. A conduction state of each of the unit cells is changed between an on state and an off state. Each of the unit cells includes, as a switch of the unit cell, a first transistor having a sufficiently low off-state current and a second transistor, a gate electrode of the second transistor being electrically connected to a source or drain electrode of the first transistor. The conduction state of the unit cell is controlled with a potential of the gate electrode of the second transistor, which can be kept even when no power is supplied thanks to the low off-state current of the first transistor.
摘要翻译：即使停止供给电源电位，也可以进行数据保持的可编程模拟装置。可编程电路包括并联或串联连接的单位单元，并且每个单位单元包括模拟元件。每个单电池的导通状态在导通状态和断开状态之间变化。每个单电池包括作为单位电池的开关的具有足够低的截止电流的第一晶体管和第二晶体管，第二晶体管的栅电极电连接到第一晶体管的源电极或漏电极晶体管。单电池的导通状态由第二晶体管的栅电极的电位来控制，即使在没有供电的情况下，由于第一晶体管的低截止电流也可以保持该电位。

9. 发明申请

US20120292613A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20120292613A1
公开(公告)日：2012-11-22
申请号：US13467490
申请日：2012-05-09
申请人： Yutaka SHIONOIRI , Hidetomo KOBAYASHI
发明人： Yutaka SHIONOIRI , Hidetomo KOBAYASHI
IPC分类号： H01L27/108
CPC分类号： G11C11/24 , G11C11/005 , H01L21/84 , H01L27/1052 , H01L27/10873 , H01L27/10897 , H01L27/11526 , H01L27/1156 , H01L27/1203 , H01L27/1225
摘要： The data in a volatile memory may conventionally be lost even in case of a very short time power down or supply voltage drop such as an outage or sag. In view of the foregoing, an object is to extend data retention time even with a volatile memory for high-speed data processing. Data retention time can be extended by backing up the data content stored in the volatile memory in a memory including a capacitor and an oxide semiconductor transistor.
摘要翻译：即使在非常短的时间断电或电源电压下降（例如断电或下垂）的情况下，易失性存储器中的数据也可能传统上会丢失。鉴于上述情况，目的是即使使用用于高速数据处理的易失性存储器来延长数据保持时间。数据保留时间可以通过备份存储在包括电容器和氧化物半导体晶体管的存储器中的易失性存储器中的数据内容来扩展。

10. 发明申请

US20120273773A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20120273773A1
公开(公告)日：2012-11-01
申请号：US13444124
申请日：2012-04-11
申请人： Yoshinori IEDA , Atsuo ISOBE , Yutaka SHIONOIRI , Tomoaki ATSUMI
发明人： Yoshinori IEDA , Atsuo ISOBE , Yutaka SHIONOIRI , Tomoaki ATSUMI
IPC分类号： H01L27/108
CPC分类号： H01L27/1207 , H01L27/092 , H01L27/105 , H01L27/1052 , H01L27/10805 , H01L27/115 , H01L27/11551 , H01L27/1156 , H01L27/1225 , H01L27/1255 , H01L27/1259 , H01L28/40 , H01L29/04 , H01L29/16 , H01L29/24 , H01L29/42384 , H01L29/4908 , H01L29/78 , H01L29/78648 , H01L29/7869
摘要： Provided is a semiconductor device which has low power consumption and can operate at high speed. The semiconductor device includes a memory element including a first transistor including crystalline silicon in a channel formation region, a capacitor for storing data of the memory element, and a second transistor which is a switching element for controlling supply, storage, and release of charge in the capacitor. The second transistor is provided over an insulating film covering the first transistor. The first and second transistors have a source electrode or a drain electrode in common.
摘要翻译：提供具有低功耗并且可以高速运行的半导体器件。半导体器件包括：存储元件，其包括在沟道形成区域中包括晶体硅的第一晶体管，用于存储存储元件的数据的电容器;以及第二晶体管，其是用于控制电荷的供应，存储和释放的开关元件电容器。第二晶体管设置在覆盖第一晶体管的绝缘膜上。第一和第二晶体管共同地具有源电极或漏电极。

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