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21. 发明授权

US08927990B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08927990B2
公开(公告)日：2015-01-06
申请号：US13651809
申请日：2012-10-15
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Toshinari Sasaki , Kosei Noda , Yuhei Sato , Yuta Endo
IPC分类号： H01L21/477 , H01L29/786
CPC分类号： H01L29/7869 , H01L29/42364
摘要： Hydrogen concentration and oxygen vacancies in an oxide semiconductor film are reduced. Reliability of a semiconductor device which includes a transistor using an oxide semiconductor film is improved. One embodiment of the present invention is a semiconductor device which includes a base insulating film; an oxide semiconductor film formed over the base insulating film; a gate insulating film formed over the oxide semiconductor film; and a gate electrode overlapping with the oxide semiconductor film with the gate insulating film provided therebetween. The base insulating film shows a signal at a g value of 2.01 by electron spin resonance. The oxide semiconductor film does not show a signal at a g value of 1.93 by electron spin resonance.
摘要翻译：氧化物半导体膜中的氢浓度和氧空位减少。提高了包括使用氧化物半导体膜的晶体管的半导体器件的可靠性。本发明的一个实施例是一种半导体器件，其包括基底绝缘膜; 形成在所述基底绝缘膜上的氧化物半导体膜; 形成在所述氧化物半导体膜上的栅极绝缘膜; 以及与氧化物半导体膜重叠的栅电极，其间设置有栅极绝缘膜。基极绝缘膜通过电子自旋共振显示出g值为2.01的信号。氧化物半导体膜通过电子自旋共振不显示g值为1.93的信号。

22. 发明申请

US20140266115A1 VOLTAGE REGULATOR CIRCUIT 有权
标题翻译：电压调节器电路
公开(公告)号：US20140266115A1
公开(公告)日：2014-09-18
申请号：US14294209
申请日：2014-06-03
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei Yamazaki , Jun Koyama , Kei Takahashi , Masashi Tsubuku , Kosei Noda
IPC分类号： H01L27/12 , H02M3/158
CPC分类号： H01L27/1225 , H01L27/1255 , H01L29/7869 , H02M3/07 , H02M3/158
摘要： A voltage regulator circuit includes a transistor and a capacitor. The transistor includes a gate, a source, and a drain, a first signal is inputted to one of the source and the drain, a second signal which is a clock signal is inputted to the gate, an oxide semiconductor layer is used for a channel formation layer, and an off-state current is less than or equal to 10 aA/μm. The capacitor includes a first electrode and a second electrode, the first electrode is electrically connected to the other of the source and the drain of the transistor, and a high power source voltage and a low power source voltage are alternately applied to the second electrode.
摘要翻译：电压调节器电路包括晶体管和电容器。晶体管包括栅极，源极和漏极，第一信号被输入到源极和漏极中的一个，作为时钟信号的第二信号被输入到栅极，氧化物半导体层被用于沟道形成层，截止电流小于或等于10AA /μm。电容器包括第一电极和第二电极，第一电极电连接到晶体管的源极和漏极中的另一个，并且高电源电压和低电源电压交替地施加到第二电极。

23. 发明授权

US11348949B2 Semiconductor device 有权
公开(公告)号：US11348949B2
公开(公告)日：2022-05-31
申请号：US16998032
申请日：2020-08-20
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei Yamazaki , Hiroki Ohara , Toshinari Sasaki , Kosei Noda , Hideaki Kuwabara
IPC分类号： H01L27/00 , H01L29/00 , H01L27/12 , H01L29/786 , H01L29/51 , G02F1/1333 , G02F1/1337 , G02F1/1343 , G02F1/1362 , G02F1/1368 , H01L29/24
摘要： An object is to provide a semiconductor device having a structure with which parasitic capacitance between wirings can be sufficiently reduced. An oxide insulating layer serving as a channel protective layer is formed over part of an oxide semiconductor layer overlapping with a gate electrode layer. In the same step as formation of the oxide insulating layer, an oxide insulating layer covering a peripheral portion of the oxide semiconductor layer is formed. The oxide insulating layer which covers the peripheral portion of the oxide semiconductor layer is provided to increase the distance between the gate electrode layer and a wiring layer formed above or in the periphery of the gate electrode layer, whereby parasitic capacitance is reduced.

24. 发明申请

US20200381459A1 METHOD FOR MANUFACTURING OXIDE SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20200381459A1
公开(公告)日：2020-12-03
申请号：US16998032
申请日：2020-08-20
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei Yamazaki , Hiroki Ohara , Toshinari Sasaki , Kosei Noda , Hideaki Kuwabara
IPC分类号： H01L27/12 , H01L29/786 , H01L29/51 , G02F1/1333 , G02F1/1337 , G02F1/1343 , G02F1/1362 , G02F1/1368 , H01L29/24
摘要： An object is to provide a semiconductor device having a structure with which parasitic capacitance between wirings can be sufficiently reduced. An oxide insulating layer serving as a channel protective layer is formed over part of an oxide semiconductor layer overlapping with a gate electrode layer. In the same step as formation of the oxide insulating layer, an oxide insulating layer covering a peripheral portion of the oxide semiconductor layer is formed. The oxide insulating layer which covers the peripheral portion of the oxide semiconductor layer is provided to increase the distance between the gate electrode layer and a wiring layer formed above or in the periphery of the gate electrode layer, whereby parasitic capacitance is reduced.

25. 发明授权

US10770597B2 Logic circuit and semiconductor device 有权
公开(公告)号：US10770597B2
公开(公告)日：2020-09-08
申请号：US16787562
申请日：2020-02-11
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei Yamazaki , Jun Koyama , Masashi Tsubuku , Kosei Noda
IPC分类号： H01L27/12 , H01L29/786 , H01L27/02 , H01L21/66
摘要： A logic circuit includes a thin film transistor having a channel formation region formed using an oxide semiconductor, and a capacitor having terminals one of which is brought into a floating state by turning off the thin film transistor. The oxide semiconductor has a hydrogen concentration of 5×1019 (atoms/cm3) or less and thus substantially serves as an insulator in a state where an electric field is not generated. Therefore, off-state current of a thin film transistor can be reduced, leadind to suppressing the leakage of electric charge stored in a capacitor, through the thin film transistor. Accordingly, a malfunction of the logic circuit can be prevented. Further, the excessive amount of current which flows in the logic circuit can be reduced through the reduction of off-state current of the thin film transistor, resulting in low power consumption of the logic circuit.

26. 发明授权

US10699904B2 Semiconductor device and method for manufacturing thereof 有权
公开(公告)号：US10699904B2
公开(公告)日：2020-06-30
申请号：US15488854
申请日：2017-04-17
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Yuta Endo , Kosei Noda , Yuichi Sato
IPC分类号： H01L29/786 , H01L29/66 , H01L29/49 , H01L29/06 , H01L21/8238 , H01L21/8234 , H01L21/461 , H01L21/3115 , H01L21/02
摘要： A transistor that is formed using an oxide semiconductor film is provided. A transistor that is formed using an oxide semiconductor film with reduced oxygen vacancies is provided. A transistor having excellent electrical characteristics is provided. A semiconductor device includes a first insulating film, a first oxide semiconductor film, a gate insulating film, and a gate electrode. The first insulating film includes a first region and a second region. The first region is a region that transmits less oxygen than the second region does. The first oxide semiconductor film is provided at least over the second region.

27. 发明授权

US10522689B2 Semiconductor device and method of manufacturing the same 有权
公开(公告)号：US10522689B2
公开(公告)日：2019-12-31
申请号：US15605211
申请日：2017-05-25
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Toshinari Sasaki , Hitomi Sato , Kosei Noda , Yuta Endo , Mizuho Ikarashi , Keitaro Imai , Atsuo Isobe , Yutaka Okazaki
IPC分类号： H01L29/786 , H01L29/66
摘要： It is an object to manufacture a semiconductor device in which a transistor including an oxide semiconductor has normally-off characteristics, small fluctuation in electric characteristics, and high reliability. First, first heat treatment is performed on a substrate, a base insulating layer is formed over the substrate, an oxide semiconductor layer is formed over the base insulating layer, and the step of performing the first heat treatment to the step of forming the oxide semiconductor layer are performed without exposure to the air. Next, after the oxide semiconductor layer is formed, second heat treatment is performed. An insulating layer from which oxygen is released by heating is used as the base insulating layer.

28. 发明授权

US10396097B2 Method for manufacturing oxide semiconductor device 有权
公开(公告)号：US10396097B2
公开(公告)日：2019-08-27
申请号：US15726691
申请日：2017-10-06
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei Yamazaki , Hiroki Ohara , Toshinari Sasaki , Kosei Noda , Hideaki Kuwabara
IPC分类号： H01L27/00 , H01L29/00 , H01L27/12 , H01L29/786 , H01L29/51 , G02F1/1333 , G02F1/1362 , G02F1/1343 , G02F1/1368 , H01L29/24 , G02F1/1337
摘要： An object is to provide a semiconductor device having a structure with which parasitic capacitance between wirings can be sufficiently reduced. An oxide insulating layer serving as a channel protective layer is formed over part of an oxide semiconductor layer overlapping with a gate electrode layer. In the same step as formation of the oxide insulating layer, an oxide insulating layer covering a peripheral portion of the oxide semiconductor layer is formed. The oxide insulating layer which covers the peripheral portion of the oxide semiconductor layer is provided to increase the distance between the gate electrode layer and a wiring layer formed above or in the periphery of the gate electrode layer, whereby parasitic capacitance is reduced.

29. 发明授权

US10211344B2 Logic circuit and semiconductor device 有权
公开(公告)号：US10211344B2
公开(公告)日：2019-02-19
申请号：US13845424
申请日：2013-03-18
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei Yamazaki , Jun Koyama , Masashi Tsubuku , Kosei Noda
IPC分类号： H01L29/786 , H01L27/12 , H01L21/66
CPC分类号： H01L29/7869 , H01L22/34 , H01L27/0207 , H01L27/1225 , H01L29/78696 , H01L2924/0002 , H01L2924/00
摘要： A logic circuit includes a thin film transistor having a channel formation region formed using an oxide semiconductor, and a capacitor having terminals one of which is brought into a floating state by turning off the thin film transistor. The oxide semiconductor has a hydrogen concentration of 5×1019 (atoms/cm3) or less and thus substantially serves as an insulator in a state where an electric field is not generated. Therefore, off-state current of a thin film transistor can be reduced, leading to suppressing the leakage of electric charge stored in a capacitor, through the thin film transistor. Accordingly, a malfunction of the logic circuit can be prevented. Further, the excessive amount of current which flows in the logic circuit can be reduced through the reduction of off-state current of the thin film transistor, resulting in low power consumption of the logic circuit.

30. 发明授权

US10186603B2 Manufacturing method of semiconductor device including oxygen doping treatment 有权
公开(公告)号：US10186603B2
公开(公告)日：2019-01-22
申请号：US15232092
申请日：2016-08-09
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei Yamazaki , Toshinari Sasaki , Kosei Noda
IPC分类号： H01L29/66 , H01L21/02 , H01L29/786 , H01L21/385 , H01L27/12
摘要： It is an object to provide a semiconductor device including an oxide semiconductor, which has stable electric characteristics and high reliability. An oxide semiconductor film serving as a channel formation region of a transistor is formed by a sputtering method at a temperature higher than 200° C., so that the number of water molecules eliminated from the oxide semiconductor film can be 0.5/nm3 or less according to thermal desorption spectroscopy. A substance including a hydrogen atom such as hydrogen, water, a hydroxyl group, or hydride which causes variation in the electric characteristics of a transistor including an oxide semiconductor is prevented from entering the oxide semiconductor film, whereby the oxide semiconductor film can be highly purified and made to be an electrically i-type (intrinsic) semiconductor.

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