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21. 发明授权

US5178904A Process for forming deposited film from a group II through group VI metal hydrocarbon compound 失效
标题翻译：用于从第II组至第VI族金属烃化合物形成沉积膜的方法
公开(公告)号：US5178904A
公开(公告)日：1993-01-12
申请号：US507001
申请日：1990-04-10
申请人： Shunichi Ishihara , Shigeru Ohno , Masahiro Kanai , Shunri Oda , Isamu Shimizu
发明人： Shunichi Ishihara , Shigeru Ohno , Masahiro Kanai , Shunri Oda , Isamu Shimizu
IPC分类号： B05D7/24 , C23C16/452 , H01L21/365
CPC分类号： C23C16/452 , B05D7/24
摘要： A process for forming a deposited film on a substrate in the absence of a plasma is conducted by generating in an activation space an activated species capable of chemically reacting with a compound for film formation and introducing into a film-forming space having the substrate, the activated species and the compound for film formation. The compound for film formation has the general formula R.sub.n M.sub.m wherein R is a hydrocarbon radical, M is an element selected from one of Groups II-IV, n is an integer equal to the valence of M and m is a positive integer equal to the valence of R. The film-forming space is remote from the activation space. The activated species initiates a chemical reaction with the compound for film formation sufficient to generate chemical species of said film-forming compound capable of directly forming the deposited film.
摘要翻译：在不存在等离子体的情况下在基板上形成沉积膜的工艺是通过在活化空间中产生能够与化合物进行化学反应的活化物质，形成和引入到具有基底的成膜空间中，活化物质和成膜化合物。用于成膜的化合物具有通式RnMm，其中R是烃基，M是选自II-IV族之一的元素，n是等于M的化合价的整数，m是等于化合价的正整数的成像空间远离激活空间。活化物质与用于成膜的化合物发生化学反应，足以产生能够直接形成沉积膜的所述成膜化合物的化学物质。

22. 发明授权

US5123995A Low-temperature, photo-induced epitaxy 失效
标题翻译：低温，光诱导外延
公开(公告)号：US5123995A
公开(公告)日：1992-06-23
申请号：US592648
申请日：1990-10-04
申请人： Charter D. Stinespring , Andrew Freedman
发明人： Charter D. Stinespring , Andrew Freedman
IPC分类号： C23C16/48 , C30B25/10 , H01L21/365
CPC分类号： H01L21/0262 , C23C16/483 , C30B25/105 , C30B29/48 , H01L21/02395 , H01L21/02562 , H01L21/02631 , Y10S117/904
摘要： Disclosed herein is a process for producing a thin film of epitaxial material on a substrate surface at low temperatures under ultrahigh vacuum conditions. In general, precursor compounds are deposited, and converted into the epitaxial material, on the substrate surface at a temperature at which they undergo no substantial dissociation. By way of example, a beam-deposited admixture of dimethyl tellurium and dimethyl cadmium is efficiently converted to an epitaxial cadmium telluride crystal on the surface of a GaAs(100) substrate placed in an ultrahigh vacuum chamber by low power, 193 nm laser irradiation (pulse fluence approximately 6 mJ cm.sup.-2) at substrate temperature of -150.degree. C. and by subsequent annealing at 200.degree. C. for 30 seconds. In addition to efficient use of precursors, this process also permits considerable improvement of pattern resolution.
摘要翻译：本文公开了一种在超低真空条件下在低温下在衬底表面上生产外延材料薄膜的方法。通常，前体化合物在它们不经历实际解离的温度下沉积并转化成衬底表面上的外延材料。例如，通过低功率，193nm激光照射，在位于超高真空室的GaAs（100）衬底的表面上，将二甲基碲和二甲基镉的光束沉积的混合物有效地转化为外延碲化镉晶体（脉冲能量密度约6mJ cm -2），然后在200℃退火30秒。除了有效利用前体外，该方法还允许显着提高图案分辨率。

23. 发明授权

US5118365A II-IV group compound crystal article and process for producing same 失效
标题翻译： II-IV族化合物晶体及其制造方法
公开(公告)号：US5118365A
公开(公告)日：1992-06-02
申请号：US664432
申请日：1991-03-04
申请人： Hiroyuki Tokunaga , Takao Yonehara
发明人： Hiroyuki Tokunaga , Takao Yonehara
IPC分类号： C30B25/02 , C30B25/18 , H01L21/36 , H01L21/365
CPC分类号： C30B25/02 , C30B25/18 , C30B29/48 , H01L21/0242 , H01L21/02422 , H01L21/02551 , H01L21/02554 , H01L21/02557 , H01L21/0256 , H01L21/0262 , H01L21/02639 , H01L21/02647 , Y10S117/902 , Y10S117/913 , Y10S148/064
摘要： A II-VI group compound crystal article comprises a substrate having a non-nucleation surface with smaller nucleation density (S.sub.NDS) and a nucleation surface (S.sub.NDL) which is arranged adjacent to said non-nucleation surface (S.sub.NDS), has a sufficiently small area for a crystal to grow only from a single nucleus and a larger nucleation density (ND.sub.L) than the nucleation density (ND.sub.S) of said non-nucleation surface (S.sub.NDS) and is comprised of an amorphous material, and a II-VI group compound monocrystal grown from said single nucleus on said substrate and spread on said non-nucleation surface (S.sub.NDS) beyond said nucleation surface (S.sub.NDL).

24. 发明授权

US5100691A Process for selective formation of II-VI group compound flim 失效
标题翻译：选择性形成II-VI族化合物的方法
公开(公告)号：US5100691A
公开(公告)日：1992-03-31
申请号：US686868
申请日：1991-04-16
申请人： Hiroyuki Tokunaga , Takao Yonehara
发明人： Hiroyuki Tokunaga , Takao Yonehara
IPC分类号： C30B25/18 , C30B29/48 , H01L21/36 , H01L21/365 , H01L21/84 , H01L31/032 , H01L31/18
CPC分类号： H01L21/84 , H01L21/0242 , H01L21/02422 , H01L21/02488 , H01L21/02557 , H01L21/0256 , H01L21/02568 , H01L21/0262 , H01L21/02639 , H01L31/0322 , H01L31/1828 , H01L31/1832 , Y02E10/541 , Y02E10/543
摘要： A process for selective formation of a II-VI group compound film comprises applying a compound film forming treatment, in a gas phase including a starting material for supplying the group II atoms of periodic table and a starting material for supplying the group VI atoms of periodic table, on a substrate having a non-nucleation surface (S.sub.NDS) with small nucleation density and a nucleation surface (S.sub.NDL) with larger nucleation density (ND.sub.L) than the nucleation density (ND.sub.S) of said non-nucleation surface (S.sub.NDS) and a large area sufficient for a number of nuclei to be formed and forming selectively a II-VI group compound film only on said nucleation surface (S.sub.NDL).

25. 发明授权

US5004821A Production of phenylarsines 失效
标题翻译：苯胂的生产
公开(公告)号：US5004821A
公开(公告)日：1991-04-02
申请号：US456233
申请日：1989-12-27
申请人： Hartmut Hofmann
发明人： Hartmut Hofmann
IPC分类号： C01G28/00 , C07F9/74 , C30B25/02 , C30B25/14 , C30B29/40 , H01L21/365
CPC分类号： C30B25/02 , C07F9/743 , C30B29/40
摘要： Organic metallic compounds in the form of phenylarsines are used in epitaxy processes, such as MO-VPE. MO-CVD or MOMBE processes, as well as for ion implantation or the in-situ doping of polysilicon for semi-conductors.
摘要翻译：苯基胂形式的有机金属化合物用于外延过程，如MO-VPE。 MO-CVD或MOMBE工艺，以及用于半导体的离子注入或多晶硅的原位掺杂。

26. 发明授权

US4992303A Chemical vapor deposition of cadmium mercury telluride 失效
标题翻译：碲化汞的化学气相沉积
公开(公告)号：US4992303A
公开(公告)日：1991-02-12
申请号：US497746
申请日：1990-03-19
申请人： Peter A. C. Whiffin , Christopher D. Maxey , Brian C. Easton
发明人： Peter A. C. Whiffin , Christopher D. Maxey , Brian C. Easton
IPC分类号： C30B25/02 , C30B25/14 , H01L21/365
CPC分类号： C23C16/45561 , C30B25/02 , C30B25/14 , C30B29/48 , H01L21/02562 , H01L21/02573 , H01L21/0262
摘要： In the manufacture of an electronic device, e.g. an infrared detector of cadmium mercury telluride, a gas stream (36) comprising two or more reactants is passed over a heated substrate (29) in a reaction zone (C) of a reactor vessel (1) so as to deposit material in a layer (30) on the substrate (29). One reactant, e.g. a readily decomposible cadmium alkyl (Me.sub.2 Cd), is supplied to the reaction zone (C) by means of an injection tube (b 12) which passes through a heated first zone (A) of the vessel (1). The tube (12) has a narrow bore (y) to provide a high flow velocity for this reactant (Me.sub.2 Cd) through the first zone (A). In accordance with the invention, the tube (12) widens in at least one dimension (x), towards its outlet end, so as to provide a wider outlet for injecting the reactant (Me.sub.2 Cd) into the gas stream (38,36) with a lower flow velocity which matches more closely the flow velocity of the gas stream (38,36). A more balanced mixing is achieved leading to improved compositional homogeneity in the deposited layer (30), even for difficult materials such as cadmium mercury telluride. The heated first zone (A) may comprise a capsule (2) containing e.g. a pool of mercury (3), and such a capsule (2) preferably has an outlet (a) of smaller cross-sectional area within which the widened outlet of the injection tube (12) is concentrically arranged so that the gas stream (38) is symmetrically constricted around the outlet of the injection tube (12).

27. 发明授权

US4950621A Method of growing crystalline layers by vapor phase epitaxy 失效
标题翻译：通过气相外延生长结晶层的方法
公开(公告)号：US4950621A
公开(公告)日：1990-08-21
申请号：US795447
申请日：1985-11-06
申请人： Stuart J. Irvine , John B. Mullin , Jean Giess
发明人： Stuart J. Irvine , John B. Mullin , Jean Giess
IPC分类号： C30B25/02 , C30B25/10 , C30B29/40 , C30B29/48 , H01L21/365
CPC分类号： C30B25/02 , C30B25/105 , C30B29/40 , C30B29/48 , H01L21/02411 , H01L21/02562 , H01L21/02573 , H01L21/0262 , Y10S148/048 , Y10S148/064 , Y10S148/094
摘要： A method of growing an epitaxial crystalline layer on a substrate which comprises the steps of(a) providing in the reaction zone of a reaction vessel a heated substrate(b) establishing a gas stream, provided by a carrier gas which gas stream comprises at least 50% by volume of a gas which suppresses the homogeneous nucleation of particles in the vapor phase which contains, in the vapor phase, at least one alkyl of an element selected from Group 15 and Group 16 of the Periodic Table,(c) passing the gas stream through the reaction zone into contact with the heated substrate, and(d) irradiating at least a major part of the surface of the substrate with electromagnetic radiation to provide photolytic decomposition of the at least one alkyl and consequential epitaxial deposition of the layer containing the said element across at least a major part of the surface of the substrate.
摘要翻译：一种在衬底上生长外延晶体层的方法，其包括以下步骤：（a）在反应区的反应区中提供加热衬底（b），建立由载气提供的气流，该气流至少包括 50体积％的气体，其抑制在汽相中含有至少一种选自元素周期表第15族和第16族的元素的至少一种烷基的气相中颗粒的均匀成核，（c）使通过反应区的气流与加热的基底接触，以及（d）用电磁辐射照射基底的表面的至少大部分，以提供含有至少一种烷基和伴随的外延沉积的层的光解分解所述元件穿过衬底表面的至少大部分。

28. 发明授权

US4716128A Method of fabricating silicon-on-insulator like devices 失效
标题翻译：制造绝缘体上硅的器件的方法
公开(公告)号：US4716128A
公开(公告)日：1987-12-29
申请号：US940255
申请日：1986-12-10
申请人： Peter J. Schubert , Nadeem S. Alvi
发明人： Peter J. Schubert , Nadeem S. Alvi
IPC分类号： H01L21/20 , H01L21/285 , H01L21/762 , H01L29/78 , H01L21/365
CPC分类号： H01L21/28525 , H01L21/02381 , H01L21/02543 , H01L21/02546 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L21/76216 , H01L29/78
摘要： A process for forming MOS transistors in which the source and drain regions essentially interface only the channel portion of the silicon substrate to keep parasitic capacitances low. To this end, a monocrystalline silicon substrate has one major planar surface covered with a layer of silicon oxide and a hole formed in the oxide layer of a size suited for the channel of the transistor. Then silicon is epitaxially grown vertically to fill the hole. The grown silicon is then covered. Next, portions of the oxide layer are removed to expose a pair of opposed vertical sidewalls of the vertically grown silicon and silicon is epitaxially grown laterally out of said exposed sidewalls. Such laterally grown regions serve as the source and drain of the transistor and an upper portion of the vertically grown silicon serves as the channel. A gate oxide is grown over a top portion of the vertically grown silicon and a polysilicon gate region is formed over the gate oxide. The gate region then serves as a mask which allows the laterally grown drain and source regions to be doped and to be self-aligned to the gate region.
摘要翻译：用于形成MOS晶体管的工艺，其中源极和漏极区域仅基本上与硅衬底的沟道部分相接，以保持寄生电容较低。为此，单晶硅衬底具有覆盖有氧化硅层的一个主平面，并且在适于晶体管的沟道的尺寸的氧化物层中形成的孔。然后硅垂直外延生长以填补孔。然后覆盖生长的硅。接下来，去除氧化物层的部分以暴露垂直生长的硅的一对相对的垂直侧壁，并且硅在所述暴露侧壁外侧向外延生长。这种横向生长的区域用作晶体管的源极和漏极，并且垂直生长的硅的上部用作沟道。在垂直生长的硅的顶部上生长栅极氧化物，并且在栅极氧化物上形成多晶硅栅极区。然后，栅极区域用作掩模，其允许横向生长的漏极和源极区域被掺杂并且与栅极区域自对准。

29. 发明授权

US4689094A Compensation doping of group III-V materials 失效
标题翻译： III-V族材料的补偿掺杂
公开(公告)号：US4689094A
公开(公告)日：1987-08-25
申请号：US813305
申请日：1985-12-24
申请人： H. Barteld Van Rees , Paul E. Whittier, Jr.
发明人： H. Barteld Van Rees , Paul E. Whittier, Jr.
IPC分类号： C23C16/448 , C30B31/06 , C30B31/18 , H01L21/205 , C03B23/00 , H01L21/365
CPC分类号： C30B31/06 , C23C16/4482 , C30B29/42 , C30B31/18 , H01L21/02395 , H01L21/02463 , H01L21/02546 , H01L21/02576 , H01L21/02579 , H01L21/02581 , H01L21/0262
摘要： A method of growing an epitaxial doped chromium buffer layer is described. A first flow of arsenic trichloride and hydrogen is directed through a retort having disposed therein at an elevated temperature chromium and gallium arsenide crystals. The arsenic trichloride reacts with the chromium and the gallium arsenic crystals to produce chromium chloride, gallium chloride and arsenic. This vapor stream is then directed into a reactor tube where a second flow of gallium chloride and arsenic is provided. Deposited from these flows is gallium arsenide doped with chromium.
摘要翻译：描述了生长外延掺杂的铬缓冲层的方法。三氯化砷和氢的第一流动通过其中设置有高温铬和砷化镓晶体的蒸馏器引导。三氯化砷与铬和镓砷晶体反应产生氯化铬，氯化镓和砷。然后将该蒸汽流导入反应器管，其中提供第二流的氯化镓和砷。从这些流程中沉积的是掺杂有铬的砷化镓。

30. 发明授权

US4632712A Reducing dislocations in semiconductors utilizing repeated thermal cycling during multistage epitaxial growth 失效
公开(公告)号：US4632712A
公开(公告)日：1986-12-30
申请号：US678364
申请日：1984-12-04
申请人： John C. C. Fan , Bor-Yeu Tsaur , Ronald P. Gale , Frances M. Davis
发明人： John C. C. Fan , Bor-Yeu Tsaur , Ronald P. Gale , Frances M. Davis
IPC分类号： H01L21/20 , H01L21/205 , H01L21/365 , H01L21/322 , H01L21/324
CPC分类号： H01L21/02562 , H01L21/02381 , H01L21/02392 , H01L21/0245 , H01L21/02543 , H01L21/02546 , Y10S148/003 , Y10S148/025 , Y10S148/097 , Y10S438/933
摘要： Dislocation densities are reduced in growing semiconductors from the vapor phase by employing a technique of interrupting growth, cooling the layer so far deposited, and then repeating the process until a high quality active top layer is achieved. The method of interrupted growth, coupled with thermal cycling, permits dislocations to be trapped in the initial stages of epitaxial growth.

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