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1. 发明授权

US10062800B2 Photovoltaic devices and method of making 有权
公开(公告)号：US10062800B2
公开(公告)日：2018-08-28
申请号：US13912782
申请日：2013-06-07
申请人： First Solar, Inc.
发明人： Holly Ann Blaydes , Kristian William Andreini , William Hullinger Huber , Eugene Thomas Hinners , Joseph John Shiang , Yong Liang , Jongwoo Choi , Adam Fraser Halverson
IPC分类号： H01L31/0272 , H01L31/18 , H01L31/0224 , H01L31/0296 , H01L31/065 , H01L31/073
CPC分类号： H01L31/1828 , H01L31/022425 , H01L31/02966 , H01L31/065 , H01L31/073 , H01L31/1832 , Y02E10/543 , Y02P70/521
摘要： A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer includes selenium, and an atomic concentration of selenium varies non-linearly across a thickness of the absorber layer. A method of making a photovoltaic device is also presented.

2. 发明授权

US09879143B2 Precursor solution for forming metal chalcogenide film 有权
公开(公告)号：US09879143B2
公开(公告)日：2018-01-30
申请号：US14706315
申请日：2015-05-07
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Kyungsang Cho
IPC分类号： H01B1/06 , B05D5/12 , C09D5/24 , H01L21/02 , H01L21/477 , H01L31/18 , H01L33/00
CPC分类号： C09D5/24 , B05D5/12 , H01B1/06 , H01L21/02422 , H01L21/02557 , H01L21/0256 , H01L21/02562 , H01L21/02568 , H01L21/02628 , H01L21/02664 , H01L21/477 , H01L31/18 , H01L31/1828 , H01L31/1864 , H01L33/005 , H01L33/0083 , H01L33/0095 , Y02E10/543
摘要： A chalcogen element can be effectively dissolved in a non-explosive hydrazine-based solvent by the aid of sodium in a non-explosive hydrazine-based solvent. Therefore, a precursor solution for forming a metal chalcogenide film containing as a solvent a non-explosive hydrazine-based solvent which is less poisonous than hydrazine and which is free of explosiveness is provided. A metal chacogenide thin film may be formed employing the metal chalcogenide precursor solution.

3. 发明授权

US09871154B2 Photovoltaic devices 有权
公开(公告)号：US09871154B2
公开(公告)日：2018-01-16
申请号：US13923644
申请日：2013-06-21
申请人： First Solar, Inc.
发明人： Anil Raj Duggal , Joseph John Shiang , William Hullinger Huber , Adam Fraser Halverson
IPC分类号： H01L31/0272 , H01L31/0296 , H01L31/065 , H01L31/073 , H01L31/18
CPC分类号： H01L31/0272 , H01L31/02966 , H01L31/065 , H01L31/073 , H01L31/1832 , Y02E10/543
摘要： A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer includes cadmium, tellurium, and selenium. A semiconductor layer is further disposed on the absorber layer, wherein a valence band offset between the semiconductor layer and the absorber layer is less than about 1.3 electron Volts, and a band gap of the semiconductor layer is in a range from about 1.2 electron Volts to about 3.5 electron Volts.

4. 发明授权

US09825197B2 Method of forming a buffer layer in a solar cell, and a solar cell formed by the method 有权
公开(公告)号：US09825197B2
公开(公告)日：2017-11-21
申请号：US13781920
申请日：2013-03-01
申请人： TSMC Solar Ltd.
发明人： Shih-Wei Chen
IPC分类号： H01L31/18 , H01L31/0296 , H01L31/0749 , H01L21/02
CPC分类号： H01L31/1828 , H01L21/02425 , H01L21/02485 , H01L21/02551 , H01L21/02568 , H01L21/02614 , H01L31/02966 , H01L31/0749 , Y02E10/541 , Y02E10/543
摘要： A method of fabricating a buffer layer of a photovoltaic device comprises: providing a substrate having a back contact layer disposed above the substrate and an absorber layer disposed above the back contact layer; depositing a metal layer on the absorber layer; and performing a thermal treatment on the deposited metal layer in an atmosphere comprising sulfur, selenium or oxygen, to form a buffer layer.

5. 发明授权

US09799784B2 High efficiency photovoltaic device employing cadmium sulfide telluride and method of manufacture 有权
公开(公告)号：US09799784B2
公开(公告)日：2017-10-24
申请号：US14209740
申请日：2014-03-13
申请人： FIRST SOLAR, INC
发明人： Arnold Allenic , Zhigang Ban , Benyamin Buller , Markus Gloeckler , Benjamin Milliron , Xilin Peng , Rick C. Powell , Jigish Trivedi , Oomman K. Varghese , Jianjun Wang , Zhibo Zhao
IPC分类号： H01L31/0296 , H01L31/18 , H01L31/0392 , H01L31/073
CPC分类号： H01L31/0296 , H01L31/02963 , H01L31/02966 , H01L31/03925 , H01L31/073 , H01L31/18 , H01L31/1832 , Y02E10/543
摘要： A photovoltaic device is disclosed including at least one Cadmium Sulfide Telluride (CdSxTe1−x) layer as are methods of forming such a photovoltaic device.

6. 发明申请

US20170236956A1 Photovoltaic Devices and Method of Making 审中-公开
公开(公告)号：US20170236956A1
公开(公告)日：2017-08-17
申请号：US15586505
申请日：2017-05-04
申请人： First Solar, Inc.
发明人： Yong Liang , Jinbo Cao , William Hullinger Huber
IPC分类号： H01L31/032 , H01L31/073 , H01L31/0224
CPC分类号： H01L31/0321 , H01L31/022466 , H01L31/022475 , H01L31/022483 , H01L31/073 , Y02E10/543 , Y02P70/521
摘要： A photovoltaic device is presented. The photovoltaic device includes a buffer layer disposed on a transparent conductive oxide layer; a window layer disposed on the buffer layer; and an interlayer interposed between the transparent conductive oxide layer and the window layer. The interlayer includes a metal species, wherein the metal species includes gadolinium, beryllium, calcium, barium, strontium, scandium, yttrium, hafnium, cerium, lutetium, lanthanum, or combinations thereof. A method of making a photovoltaic device is also presented

7. 发明授权

US09698285B2 Photovoltaic device including a P-N junction and method of manufacturing 有权
公开(公告)号：US09698285B2
公开(公告)日：2017-07-04
申请号：US14171020
申请日：2014-02-03
申请人： First Solar, Inc.
发明人： Dan Damjanovic , Feng Liao , Rick Powell , Rui Shao , Jigish Trivedi , Zhibo Zhao
IPC分类号： H01L31/044 , H01L31/0296 , H01L31/073 , H01L31/18
CPC分类号： H01L31/02966 , H01L31/073 , H01L31/1832 , H01L31/1864 , Y02E10/543 , Y02P70/521
摘要： A photovoltaic device includes a substrate structure and a p-type semiconductor absorber layer, the substrate structure including a CdSSe layer. A photovoltaic device may alternatively include a CdSeTe layer. A process for manufacturing a photovoltaic device includes forming a CdSSe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process includes forming a p-type absorber layer above the CdSSe layer.

8. 发明授权

US09557273B2 Quantitative analyzing method of CIGS film using a laser induced breakdown spectroscopy 有权
标题翻译：使用激光诱导击穿光谱法对CIGS膜的定量分析方法
公开(公告)号：US09557273B2
公开(公告)日：2017-01-31
申请号：US14143723
申请日：2013-12-30
申请人： GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY
发明人： Sungho Jeong , Jeong Hwan In , Chan Kyu Kim , Seokhee Lee , Hakjae Lee
IPC分类号： G01C19/00 , G01D18/00 , G01F25/00 , G06F19/00 , G01N21/71
CPC分类号： G01N21/718 , Y02E10/541 , Y02E10/543
摘要： Disclosed herein is a quantitative analyzing method of a copper indium gallium selenide (CIGS) film, the method including: obtaining spectra by irradiating a laser on the plurality of CIGS films having different component compositions, selecting a first spectral line and a second spectral line among the spectra of target elements to be analyzed and obtaining a correlation plot between a measured intensity of the first spectral line and a measured intensity of the second spectral line, correcting the measured intensity of the first spectral line and the measured intensity of the second spectral line using results obtained by curve fitting the correlation plot, obtaining a linear calibration curve using the corrected intensity of the first spectral line and the corrected intensity of the second spectral line; and comparing the linear calibration curve with LIBS analysis of a target sample to be analyzed.
摘要翻译：本文公开了一种铜铟镓硒（CIGS）膜的定量分析方法，该方法包括：通过在具有不同组成成分的多个CIGS膜上照射激光来获得光谱，选择第一光谱线和第二光谱线要分析的目标元素的光谱，并且获得第一光谱线的测量强度和第二光谱线的测量强度之间的相关图，校正第一光谱线的测量强度和第二光谱线的测量强度使用通过曲线拟合相关图获得的结果，使用第一光谱线的校正强度和第二光谱线的校正强度获得线性校准曲线; 并将线性校准曲线与要分析的目标样品的LIBS分析进行比较。

9. 发明授权

US09543457B2 Method and system for manufacturing back contacts of photovoltaic devices 有权
标题翻译：制造光伏器件背面触点的方法和系统
公开(公告)号：US09543457B2
公开(公告)日：2017-01-10
申请号：US14041357
申请日：2013-09-30
申请人： First Solar, Inc.
发明人： Charles Edward Wickersham
IPC分类号： H01L31/0224 , H01L31/073 , H01L31/18 , H01L31/20 , C30B1/02 , C30B1/12 , C30B29/48
CPC分类号： H01L31/073 , C30B1/023 , C30B1/12 , C30B29/48 , H01L31/022425 , H01L31/022441 , H01L31/1872 , H01L31/20 , Y02E10/543 , Y02P70/521
摘要： A method for manufacturing a photovoltaic device includes a step of depositing one of an amorphous layer of ZnTe and a multilayer stack of Zn and Te adjacent a semiconductor layer. The one of the amorphous layer and the multilayer stack is then subjected to an energy impulse at a temperature equal to or greater than its critical temperature. The energy impulse results in an explosive crystallization to form a polycrystalline layer of ZnTe from the one of the amorphous layer and the multilayer stack.
摘要翻译：制造光伏器件的方法包括沉积ZnTe的非晶层和邻近半导体层的Zn和Te的多层堆叠之一的步骤。然后将非晶层和多层堆叠中的一个在等于或大于其临界温度的温度下进行能量脉冲。能量脉冲导致爆炸性结晶，从非晶层和多层堆叠中的一个形成ZnTe的多晶层。

10. 发明申请

US20170005222A1 METHOD OF MAKING PHOTOVOLTAIC CELL 有权
标题翻译：制备光伏电池的方法
公开(公告)号：US20170005222A1
公开(公告)日：2017-01-05
申请号：US15265374
申请日：2016-09-14
申请人： Sandia Corporation , The Board of Regents of the University of Texas System
发明人： Jose Luis Cruz-Campa , Xiaowang Zhou , David Zubia
IPC分类号： H01L31/18 , H01L31/073
CPC分类号： H01L31/1832 , H01L31/0352 , H01L31/035281 , H01L31/03529 , H01L31/06 , H01L31/065 , H01L31/0725 , H01L31/073 , Y02E10/543
摘要： A photovoltaic solar cell comprises a nano-patterned substrate layer. A plurality of nano-windows are etched into an intermediate substrate layer to form the nano-patterned substrate layer. The nano-patterned substrate layer is positioned between an n-type semiconductor layer composed of an n-type semiconductor material and a p-type semiconductor layer composed of a p-type semiconductor material. Semiconductor material accumulates in the plurality of nano-windows, causing a plurality of heterojunctions to form between the n-type semiconductor layer and the p-type semiconductor layer.
摘要翻译：光伏太阳能电池包括纳米图案化衬底层。将多个纳米窗口蚀刻到中间基底层中以形成纳米图案化的衬底层。纳米图案化衬底层位于由n型半导体材料构成的n型半导体层和由p型半导体材料构成的p型半导体层之间。半导体材料积聚在多个纳米窗口中，导致在n型半导体层和p型半导体层之间形成多个异质结。

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