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21. 发明授权

US08941160B2 Photoelectric conversion module and method of manufacturing the same 有权
标题翻译：光电转换模块及其制造方法
公开(公告)号：US08941160B2
公开(公告)日：2015-01-27
申请号：US13203235
申请日：2010-02-26
申请人： Koichiro Niira
发明人： Koichiro Niira
IPC分类号： H01L31/0264 , H01L31/18 , H01L27/142 , H01L31/042
CPC分类号： H01L31/042 , H01L31/0463 , H01L31/0465 , Y02E10/50
摘要： A photoelectric conversion module according to an embodiment of the present invention includes a plurality of units formed on a substrate and disposed parallel to each other, each including a plurality of photoelectric conversion cells formed in one direction, the plurality of units disposed in an orthogonal direction to the one direction, and a first separation region disposed between adjacent units of the units. In the solar cell module, each of the photoelectric conversion cells includes a second separation region, and the second separation region in one of the units is extended beyond the first separation region formed between one of the units and the other unit which is adjacent to the one of units toward a part of the other unit.
摘要翻译：根据本发明实施例的光电转换模块包括形成在基板上并且彼此平行布置的多个单元，每个单元包括在一个方向上形成的多个光电转换单元，所述多个单元沿正交方向并且设置在所述单元的相邻单元之间的第一分离区域。在太阳能电池模块中，每个光电转换单元包括第二分离区域，并且其中一个单元中的第二分离区域延伸超过在单元之间形成的第一分离区域和与其相邻的单元之间形成的另一单元其中一个单位朝向另一个单位的一部分。

22. 发明授权

US08889979B2 Thick-film pastes containing lead—tellurium—lithium—titanium—oxides, and their use in the manufacture of semiconductor devices 有权
标题翻译：含铅碲 - 锂钛氧化物的厚膜糊料及其在制造半导体器件中的应用
公开(公告)号：US08889979B2
公开(公告)日：2014-11-18
申请号：US13100540
申请日：2011-05-04
申请人： Alan Frederick Carroll , Kenneth Warren Hang , Brian J. Laughlin , Kurt Richard Mikeska , Carmine Torardi , Paul Douglas Vernooy
发明人： Alan Frederick Carroll , Kenneth Warren Hang , Brian J. Laughlin , Kurt Richard Mikeska , Carmine Torardi , Paul Douglas Vernooy
IPC分类号： H01L31/00 , H01L21/44 , H01B1/02 , H01B1/22 , H01L31/0224 , B22F1/00 , B22F7/04 , B22F7/08 , C03C8/10 , C03C8/12 , C04B35/01 , H01B1/16 , H01L31/18 , H01L31/0264
CPC分类号： H01L31/022425 , B22F1/0059 , B22F1/007 , B22F7/04 , B22F7/08 , B22F2007/047 , C03C8/10 , C03C8/12 , C04B35/01 , H01B1/16 , H01B1/22 , H01L31/0264 , H01L31/1884 , H01L2924/0002 , Y02E10/50 , Y02E10/52 , H01L2924/00
摘要： The present invention provides a thick-film paste for printing the front side of a solar cell device having one or more insulating layers. The thick-film paste comprises an electrically conductive metal, and a lead-tellurium-lithium-titanium-oxide dispersed in an organic medium.
摘要翻译：本发明提供一种用于印刷具有一个或多个绝缘层的太阳能电池装置的正面的厚膜糊剂。厚膜糊包含分散在有机介质中的导电金属和铅 - 碲 - 锂 - 二氧化钛。

23. 发明授权

US08822816B2 Niobium thin film stress relieving layer for thin-film solar cells 有权
标题翻译：薄膜太阳能电池铌薄膜应力消除层
公开(公告)号：US08822816B2
公开(公告)日：2014-09-02
申请号：US13534519
申请日：2012-06-27
申请人： Qing Cao , Zhengwen Li , Fei Liu , Zhen Zhang
发明人： Qing Cao , Zhengwen Li , Fei Liu , Zhen Zhang
IPC分类号： H01L31/0264 , H01L31/18
CPC分类号： H01L31/02167 , H01L31/022425 , H01L31/022441 , H01L31/022475 , H01L31/0296 , H01L31/0322 , H01L31/0326 , H01L31/0749 , Y02E10/541 , Y02P70/521
摘要： A method of forming a photovoltaic device includes forming a thermal stress relieving layer on top of a substrate and forming a sacrificial back electrode metal layer on the thermal stress relieving layer. A semiconductor photon absorber layer is formed on the sacrificial back electrode metal layer, and the absorber layer is reacted with substantially an entire thickness of the sacrificial back electrode metal layer, thereby forming a back ohmic contact comprising a metallic compound of the sacrificial back electrode metal layer and the absorber layer, in combination with the thermal stress relieving layer.
摘要翻译：形成光伏器件的方法包括在衬底的顶部形成热应力消除层，并在热应力消除层上形成牺牲背电极金属层。在牺牲背电极金属层上形成半导体光子吸收层，吸收层与牺牲背极金属层的大致整个厚度反应，形成包含牺牲背电极金属的金属化合物的反欧姆接触层和吸收层，与热应力消除层组合。

24. 发明申请

US20140166107A1 Back-Contact Electron Reflectors Enhancing Thin Film Solar Cell Efficiency 审中-公开
标题翻译：背接触电子反射器增强薄膜太阳能电池效率
公开(公告)号：US20140166107A1
公开(公告)日：2014-06-19
申请号：US13714274
申请日：2012-12-13
申请人： INTERMOLECULAR, INC.
发明人： Mankoo Lee , Sergey Barabash , Tony P. Chiang , Dipankar Pramanik
IPC分类号： H01L31/0264 , H01L31/18
CPC分类号： H01L31/056 , H01L31/0322 , H01L31/03923 , H01L31/0749 , Y02E10/52 , Y02E10/541
摘要： Methods for improving the efficiency of solar cells are disclosed. A solar cell consistent with the present disclosure includes a back contact metal layer disposed on a substrate. The solar cell also includes an electron reflector material(s) layer formed on the back contact metal layer and an absorber material(s) layer disposed on the electron reflector material(s) layer. In addition, the solar cell includes a buffer material(s) layer formed on the absorber material(s) layer wherein the electron reflector material(s) layer, absorber material(s) layer, and buffer material(s) layer form a pn junction within the solar cell. Furthermore, a TCO material(s) layer is formed on the buffer material(s) layer. In addition, the front contact layer is formed on the TCO material(s) layer.
摘要翻译：公开了提高太阳能电池效率的方法。符合本公开的太阳能电池包括设置在基板上的背接触金属层。太阳能电池还包括形成在背接触金属层上的电子反射器材料层和设置在电子反射器材料层上的吸收体材料层。此外，太阳能电池包括形成在吸收材料层上的缓冲材料层，其中电子反射器材料层，吸收材料层和缓冲材料层形成pn 太阳能电池内的接头。此外，在缓冲材料层上形成TCO材料层。此外，前接触层形成在TCO材料层上。

25. 发明授权

US08742413B2 Photosensor and method of manufacturing the same 有权
标题翻译：光电传感器及其制造方法
公开(公告)号：US08742413B2
公开(公告)日：2014-06-03
申请号：US13239627
申请日：2011-09-22
申请人： Jae-Hwan Oh , Won-Kyu Lee , Seong-Hyun Jin , Young-Jin Chang , Jae-Beom Choi
发明人： Jae-Hwan Oh , Won-Kyu Lee , Seong-Hyun Jin , Young-Jin Chang , Jae-Beom Choi
IPC分类号： H01L31/0264 , H01L31/20
CPC分类号： H01L31/1804 , H01L31/105 , H01L31/1055 , Y02E10/547 , Y02P70/521
摘要： In a photosensor and a method of manufacturing the same, the photosensor comprises: an intrinsic silicon layer formed on a substrate; a P-type doped region formed in a same plane with the intrinsic silicon layer; and an oxide semiconductor layer formed on or under the intrinsic silicon layer, and overlapping an entire region of the intrinsic silicon layer.
摘要翻译：在光传感器及其制造方法中，光电传感器包括：形成在基板上的本征硅层; 与本征硅层在同一平面内形成的P型掺杂区域; 以及形成在本征硅层之上或之下的氧化物半导体层，并且与本征硅层的整个区域重叠。

26. 发明申请

US20140076387A1 GROUP-IV SOLAR CELL STRUCTURE USING GROUP-IV or III-V HETEROSTRUCTURES 有权
标题翻译：使用IV组或III-V组织的第IV组太阳能电池结构
公开(公告)号：US20140076387A1
公开(公告)日：2014-03-20
申请号：US13617316
申请日：2012-09-14
申请人： Richard R. King , Christopher M. Fetzer , Nasser H. Karam
发明人： Richard R. King , Christopher M. Fetzer , Nasser H. Karam
IPC分类号： H01L31/0264 , H01L31/06
CPC分类号： H01L31/0725 , H01L31/0687 , H01L31/074 , H01L31/0745 , H01L31/078 , Y02E10/544
摘要： Device structures, apparatuses, and methods are disclosed for photovoltaic cells that may be a single junction or multijunction solar cells, with at least a first layer comprising a group-IV semiconductor in which part of the cell comprises a second layer comprising a III-V semiconductor or group-IV semiconductor having a different composition than the group-IV semiconductor of the first layer, such that a heterostructure is formed between the first and second layers.
摘要翻译：公开了用于可以是单结或多结太阳能电池的光伏电池的装置结构，装置和方法，其中至少第一层包括IV族半导体，其中部分电池包括第三层，其包含III-V 具有与第一层的IV族半导体不同的组成的半导体或IV族半导体，使得在第一层和第二层之间形成异质结构。

27. 发明授权

US08563855B2 Tandem photovoltaic cell 有权
标题翻译：串联光伏电池
公开(公告)号：US08563855B2
公开(公告)日：2013-10-22
申请号：US12670036
申请日：2008-07-22
申请人： Neil Gregory Pschirer , Felix Eickemeyer , Jan Schoeneboom , Jae Hyung Hwang , Martin Karlsson , Ingmar Bruder
发明人： Neil Gregory Pschirer , Felix Eickemeyer , Jan Schoeneboom , Jae Hyung Hwang , Martin Karlsson , Ingmar Bruder
IPC分类号： H01L31/02 , H01L31/0256 , H01L31/0264
CPC分类号： H01G9/2072 , B82Y10/00 , H01G9/2009 , H01L27/302 , H01L51/0037 , H01L51/0047 , H01L51/0053 , H01L51/4226 , H01L51/424 , Y02E10/542 , Y02E10/549 , Y02P70/521
摘要： A photovoltaic element (110) for converting electromagnetic radiation into electrical energy is provided, which has a tandem cell structure. The tandem cell structure comprises the following: a dye solar cell (126) having a first electrode (118), an n-type semiconducting metal oxide (120), a dye (122) absorbing electromagnetic radiation in a first spectral range and a solid p-type semiconductor (124); and an organic solar cell (130) having an acceptor material (132) and a donor material (134), the acceptor material (132) and/or the donor material (134) comprising an organic material, the organic solar cell (130) furthermore comprising a second electrode (138) on an opposite side from the dye solar cell (126), and the organic solar cell being configured to absorb electromagnetic radiation in a second spectral range, which is at least partially different to the first spectral range, the first electrode (118) and/or the second electrode (138) being at least partially transparent for the electromagnetic radiation.
摘要翻译：提供一种用于将电磁辐射转换为电能的光电元件（110），其具有串联电池结构。串联电池结构包括以下：具有第一电极（118），n型半导体金属氧化物（120）的染料太阳能电池（126），吸收第一光谱范围内的电磁辐射的染料（122） p型半导体（124）; 和具有受体材料（132）和施主材料（134）的有机太阳能电池（130），受体材料（132）和/或包含有机材料的施主材料（134），有机太阳能电池（130）还包括在与所述染料太阳能电池（126）相反侧的第二电极（138），并且所述有机太阳能电池被配置为吸收与所述第一光谱范围至少部分不同的第二光谱范围内的电磁辐射，第一电极（118）和/或第二电极（138）对于电磁辐射至少部分透明。

28. 发明申请

US20130263923A1 REVERSE HETEROJUNCTIONS FOR SOLAR CELLS 有权
标题翻译：太阳能电池的反常异常
公开(公告)号：US20130263923A1
公开(公告)日：2013-10-10
申请号：US13442146
申请日：2012-04-09
申请人： Rebecca E. Jones-Albertus , Michael J. Sheldon
发明人： Rebecca E. Jones-Albertus , Michael J. Sheldon
IPC分类号： H01L31/0264 , H01L31/18
CPC分类号： H01L31/0725 , H01L31/0735 , Y02E10/544
摘要： In a solar cell having one or more subcells, at least one subcell is provided with a reverse heterojunction, the reverse heterojunction being formed with an emitter and an adjacent base, wherein the emitter has a band gap that is at least 10 meV lower than that of the adjacent base in order to reduce sheet resistance of the emitter and/or increase the subcell current with minimal effect on the open-circuit voltage. Because of the increase in current, the decrease in emitter sheet resistance, and relatively unchanged open-circuit voltage of the subcell, the efficiency of a solar cell employing one or more subcells with reverse heterojunctions is enhanced.
摘要翻译：在具有一个或多个子电池的太阳能电池中，至少一个子电池具有反向异质结，反向异质结由发射极和相邻的基底形成，其中发射极的带隙至少低于10meV，以减小发射极的薄层电阻和/或增加子电池电流，同时对开路电压的影响最小。由于电流的增加，发射极电阻的降低和子电池的开路电压相对不变，所以采用具有反向异质结的一个或多个子电池的太阳能电池的效率提高。

29. 发明申请

US20130247982A1 SOLAR CELL 审中-公开
标题翻译：太阳能电池
公开(公告)号：US20130247982A1
公开(公告)日：2013-09-26
申请号：US13531728
申请日：2012-06-25
申请人： Eun Cheol Do , Dong Kyun Kim , Yun Gi Kim , Chul Ki Kim , Yeon il Lee , Young Moon Choi
发明人： Eun Cheol Do , Dong Kyun Kim , Yun Gi Kim , Chul Ki Kim , Yeon il Lee , Young Moon Choi
IPC分类号： H01L31/0232 , H01L31/0264
CPC分类号： H01L31/02167 , H01L31/02168 , H01L31/068 , Y02E10/547
摘要： A solar cell may include a PN junction including a semiconductor substrate of a first conductivity and an emitter of a second conductivity, a passivation layer on an exposed surface of the semiconductor substrate, a first electrode connected to the semiconductor substrate, and a second electrode connected to the emitter. The passivation layer may be configured to apply stress to the exposed surface of the substrate such that a mobility of minority charge carriers in the semiconductor substrate is decreased in a first direction perpendicular to a boundary surface of the semiconductor substrate and the passivation layer.
摘要翻译：太阳能电池可以包括PN结，其包括具有第一导电性的半导体衬底和第二导电性的发射极，半导体衬底的暴露表面上的钝化层，连接到半导体衬底的第一电极和连接到第二电极的第二电极到发射器。钝化层可以被配置为向衬底的暴露表面施加应力，使得半导体衬底中的少数电荷载流子的迁移率在垂直于半导体衬底和钝化层的边界表面的第一方向上减小。

30. 发明申请

US20130247965A1 SOLAR CELL HAVING AN EMITTER REGION WITH WIDE BANDGAP SEMICONDUCTOR MATERIAL 有权
公开(公告)号：US20130247965A1
公开(公告)日：2013-09-26
申请号：US13429138
申请日：2012-03-23
申请人： Richard M. Swanson , Marius M. Bunea , Michael C. Johnson , David D. Smith , Yu-Chen Shen , Peter J. Cousins , Tim Dennis
发明人： Richard M. Swanson , Marius M. Bunea , Michael C. Johnson , David D. Smith , Yu-Chen Shen , Peter J. Cousins , Tim Dennis
IPC分类号： H01L31/0264 , H01L31/18
CPC分类号： H01L31/0747 , H01L31/02167 , H01L31/022441 , H01L31/02363 , H01L31/068 , H01L31/0682 , H01L31/072 , H01L31/0745 , H01L31/18 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.

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