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    • 2. 发明授权
    • Photoelectric conversion module and method of manufacturing the same
    • 光电转换模块及其制造方法
    • US08941160B2
    • 2015-01-27
    • US13203235
    • 2010-02-26
    • Koichiro Niira
    • Koichiro Niira
    • H01L31/0264H01L31/18H01L27/142H01L31/042
    • H01L31/042H01L31/0463H01L31/0465Y02E10/50
    • A photoelectric conversion module according to an embodiment of the present invention includes a plurality of units formed on a substrate and disposed parallel to each other, each including a plurality of photoelectric conversion cells formed in one direction, the plurality of units disposed in an orthogonal direction to the one direction, and a first separation region disposed between adjacent units of the units. In the solar cell module, each of the photoelectric conversion cells includes a second separation region, and the second separation region in one of the units is extended beyond the first separation region formed between one of the units and the other unit which is adjacent to the one of units toward a part of the other unit.
    • 根据本发明实施例的光电转换模块包括形成在基板上并且彼此平行布置的多个单元,每个单元包括在一个方向上形成的多个光电转换单元,所述多个单元沿正交方向 并且设置在所述单元的相邻单元之间的第一分离区域。 在太阳能电池模块中,每个光电转换单元包括第二分离区域,并且其中一个单元中的第二分离区域延伸超过在单元之间形成的第一分离区域和与其相邻的单元之间形成的另一单元 其中一个单位朝向另一个单位的一部分。
    • 3. 发明授权
    • Multi-junction type solar cell device
    • 多联型太阳能电池装置
    • US07910916B2
    • 2011-03-22
    • US12480513
    • 2009-06-08
    • Koichiro NiiraHirofumi SentaHideki Hakuma
    • Koichiro NiiraHirofumi SentaHideki Hakuma
    • H01L31/00
    • H01L31/022408H01L31/022425H01L31/076H01L31/1055Y02E10/548
    • In a photoelectric conversion device, in a contact between a p-type semiconductor 3a and an electrode 2, an n-type semiconductor 6 of a conductivity type opposite to that of the p-type semiconductor is provided between the p-type semiconductor 3a and the electrode 2. The existence of the n-type semiconductor 6 allows a recombination rate of photo-generated carriers excited by incident light to be effectively reduced, and allows a dark current component to be effectively prevented from being produced. Therefore, it is possible to improve photoelectric conversion efficiency as well as to stabilize characteristics. Further, a tunnel junction is realized by increasing the concentration of a doping element in at least one or preferably both of the p-type semiconductor 3a and the n-type semiconductor 6 in a region where they are in contact with each other, thereby keeping ohmic characteristics between the semiconductor and the electrode good.
    • 在光电转换装置中,在p型半导体3a和电极2之间的接触中,在p型半导体3a和p型半导体3a之间设置与p型半导体的导电类型相反的n型半导体6, 电极2.n型半导体6的存在允许有效地减少由入射光激发的光生载流子的复合速率,并且可以有效地防止产生暗电流分量。 因此,可以提高光电转换效率以及稳定特性。 此外,通过在彼此接触的区域中增加p型半导体3a和n型半导体6中的至少一个或优选两者中的掺杂元素的浓度来实现隧道结,从而保持 半导体与电极之间的欧姆特性良好。
    • 6. 发明申请
    • Solar Cell Device and Method of Manufacturing Solar Cell Device
    • 太阳能电池装置及制造太阳能电池装置的方法
    • US20110000532A1
    • 2011-01-06
    • US12865371
    • 2009-01-30
    • Koichiro NiiraKazuaki IwamejiManabu Komoda
    • Koichiro NiiraKazuaki IwamejiManabu Komoda
    • H01L31/0236H01L31/18
    • H01L31/0747H01L31/1804Y02E10/547Y02P70/521
    • A high-efficiency solar cell device producible in a simplified manner, and a method of manufacturing the same are provided. An insulation layer is formed on the back surface side of a semiconductor substrate of a first conductivity type. Removing part of the insulation layer exposes part of the semiconductor substrate to form a plurality of first through holes. A first layer of the first conductivity type is formed on the insulation layer and on the part of the semiconductor substrate exposed in the plurality of first through holes, whereby first junction regions are formed. Removing part of the first layer and the insulation layer exposes part of the semiconductor substrate to form a plurality of second through holes. A second layer of an opposite conductivity type is formed on the first layer and on the part of the semiconductor substrate exposed in the plurality of second through holes, whereby second junction regions are formed. A first conductive section for connecting the first junction regions to each other is formed on the first layer. A second conductive section for connecting the second junction regions to each other is formed on the second layer. The first through holes and the second through holes are formed by irradiation with a laser beam.
    • 提供了一种能够简化生产的高效太阳能电池装置及其制造方法。 在第一导电类型的半导体衬底的背面侧上形成绝缘层。 去除绝缘层的一部分暴露半导体衬底的一部分以形成多个第一通孔。 第一导电类型的第一层形成在绝缘层上以及暴露在多个第一通孔中的半导体衬底的部分上,由此形成第一结区。 去除第一层和绝缘层的一部分暴露半导体衬底的一部分以形成多个第二通孔。 在第一层和半导体衬底的在多个第二通孔中露出的部分上形成相反导电类型的第二层,由此形成第二结区。 在第一层上形成用于将第一结区彼此连接的第一导电部分。 用于将第二连接区域彼此连接的第二导电部分形成在第二层上。 通过用激光束照射形成第一通孔和第二通孔。
    • 7. 发明授权
    • Photovoltaic conversion device and method of manufacturing the device
    • 光伏转换装置及其制造方法
    • US07317237B2
    • 2008-01-08
    • US11021489
    • 2004-12-22
    • Koichiro NiiraShigeru Gotoh
    • Koichiro NiiraShigeru Gotoh
    • H01L31/06
    • H01L31/186Y02E10/50Y02P70/521
    • There is disclosed a photovoltaic conversion device constructed using a p-type crystalline silicon substrate 404 doped with boron, which comprises a bulk substrate region 404, regions other than the bulk substrate region including an n-type region 403a joining to a light receiving surface of the bulk surface region, a BSF region 405 joining to a back surface of the bulk surface region, wherein with regions other than the bulk substrate region 404 being removed, when a minority carrier diffusion length of the bulk substrate region 404 is measured from the light receiving surface of the bulk surface region, 0.5
    • 公开了一种使用掺杂有硼的p型晶体硅衬底404构成的光电转换器件,其包括体衬底区域404,除了本体衬底区域之外的区域,包括n型区域403,其接合到光接收表面 的块体表面区域的接合到本体表面区域的后表面的BSF区域405,其中当块状衬底区域404的少数载流子扩散长度从 满足体表面区域的光接收表面,0.5 <(L 1 / Lpeak),其中L 1是在体表面区域的光接收表面的任意测量区域处的少数载流子扩散长度,并且Lpeak是扩散 长度对应于直方图的较高扩散长度一侧的最大峰值,直方图由当lig的少数载流子扩散长度获得的数据形成 在多个测量区域测量体积表面区域的接收表面。 这种结构可以减少杂质如Fe的影响,提高硅锭的利用效率。 利用这种结构,可以实现具有高光电转换效率的光电转换装置。
    • 8. 发明申请
    • Photovoltaic conversion device and method of manufacturing the device
    • 光伏转换装置及其制造方法
    • US20050160970A1
    • 2005-07-28
    • US11021489
    • 2004-12-22
    • Koichiro NiiraShigeru Gotoh
    • Koichiro NiiraShigeru Gotoh
    • H01L31/04C30B9/00C30B11/00C30B17/00C30B21/02C30B28/06H01L31/036H01L31/042H01L31/068H01L31/18
    • H01L31/186Y02E10/50Y02P70/521
    • There is disclosed a photovoltaic conversion device constructed using a p-type crystalline silicon substrate 404 doped with boron, which comprises a bulk substrate region 404, regions other than the bulk substrate region including an n-type region 403a joining to a light receiving surface of the bulk surface region, a BSF region 405 joining to a back surface of the bulk surface region, wherein with regions other than the bulk substrate region 404 being removed, when a minority carrier diffusion length of the bulk substrate region 404 is measured from the light receiving surface of the bulk surface region, 0.5
    • 公开了一种使用掺杂有硼的p型晶体硅衬底404构成的光电转换器件,其包括体衬底区域404,除了本体衬底区域之外的区域,包括n型区域403,其接合到光接收表面 的块体表面区域的接合到本体表面区域的后表面的BSF区域405,其中当块状衬底区域404的少数载流子扩散长度从 满足体表面区域的光接收表面,0.5 <(L 1 / Lpeak),其中L 1是在体表面区域的光接收表面的任意测量区域处的少数载流子扩散长度,并且Lpeak是扩散 长度对应于直方图的较高扩散长度一侧的最大峰值,直方图由当ligh的少数载流子扩散长度获得的数据形成 在多个测量区域处测量体表面区域的接收表面。 这种结构可以减少杂质如Fe的影响,提高硅锭的利用效率。 利用这种结构,可以实现具有高光电转换效率的光电转换装置。