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    • 31. 发明申请
    • Nitride Semiconductor Light Emitting Element and Method for Producing Nitride Semiconductor Light Emitting Element
    • 氮化物半导体发光元件和氮化物半导体发光元件的制造方法
    • US20090294784A1
    • 2009-12-03
    • US12084634
    • 2006-11-07
    • Ken NakaharaAtsushi Yamaguchi
    • Ken NakaharaAtsushi Yamaguchi
    • H01L33/00
    • H01L33/20H01L21/78H01L33/0095H01L33/44
    • Provided are a nitride semiconductor light emitting element which does not suffer a damage on a light emitting region and has a high luminance without deterioration, even though the nitride semiconductor light emitting element is one in which electrodes are disposed opposite to each other and an isolation trench for chip separation and laser lift-off is formed by etching; and a manufacturing method thereof. An n-type nitride semiconductor layer 2 has a step, formed in a position beyond an active layer 3 when viewed from a p side. Up to the position of this step A, a protective insulating film 6 covers a part of the n-type nitride semiconductor layer 2, the active layer 3, a p-type nitride semiconductor layer 4, the side of a p electrode 5 and a part of the top side of the p electrode 5. The use of a structure having a chip side face covered with the protective insulating film 6 prevents the active layer or the like from being exposed to an etching gas for a long time when an isolation trench for chip separation or laser lift-off is formed by etching.
    • 提供一种氮化物半导体发光元件,即使氮化物半导体发光元件是彼此相对设置的电极和隔离沟槽,也不会对发光区域造成损害并具有高亮度而不劣化 通过蚀刻形成芯片分离和激光剥离; 及其制造方法。 当从p侧观察时,n型氮化物半导体层2具有形成在超过有源层3的位置的台阶。 直到该步骤A的位置,保护绝缘膜6覆盖n型氮化物半导体层2,有源层3,p型氮化物半导体层4,p型电极5的一侧和一部分 使用由保护绝缘膜6覆盖的具有芯片侧面的结构使得有源层等长时间暴露于蚀刻气体时,当用于 通过蚀刻形成芯片分离或激光剥离。
    • 33. 发明申请
    • BEAM IRRADIATION DEVICE, LASER RADAR SYSTEM, AND DETECTING DEVICE
    • 光束辐射装置,激光雷达系统和检测装置
    • US20090201488A1
    • 2009-08-13
    • US12367208
    • 2009-02-06
    • Masato YamadaAtsushi YamaguchiYoshiaki Maeno
    • Masato YamadaAtsushi YamaguchiYoshiaki Maeno
    • G01C3/08G01B11/14
    • G01S3/784G01S7/4813G01S7/4817G01S7/499G01S17/46
    • A beam irradiation device includes: a first light source for emitting laser light; an actuator for moving a scanning section for receiving the laser light to scan a target area with the laser light; a second light source movable with the scanning section and adapted for emitting diffused light; a light receiving position detecting device for receiving the diffused light to output a signal depending on a position of receiving the diffused light; and a light projecting element, disposed at a position closer to the light receiving position detecting device with respect to an intermediate position between the second light source and the light receiving position detecting device, for projecting an emission position to be defined by the second light source on the light receiving position detecting device via a predetermined projection area.
    • 光束照射装置包括:用于发射激光的第一光源; 用于移动用于接收激光的扫描部分以用激光扫描目标区域的致动器; 第二光源,其可与扫描部分一起移动并适于发射漫射光; 光接收位置检测装置,用于接收漫射光以根据接收漫射光的位置输出信号; 以及投光元件,其设置在相对于所述第二光源和所述受光位置检测装置之间的中间位置的靠近所述受光位置检测装置的位置,用于投射由所述第二光源 经由预定投影区域在光接收位置检测装置上。