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    • 5. 发明授权
    • Fixing device and image forming apparatus having the same
    • 固定装置及其成像装置
    • US08615179B2
    • 2013-12-24
    • US12698383
    • 2010-02-02
    • Atsushi YamaguchiSeiichi KirikuboAkihiro HayashiYutaka YamamotoNaoto Sugaya
    • Atsushi YamaguchiSeiichi KirikuboAkihiro HayashiYutaka YamamotoNaoto Sugaya
    • G03G15/20
    • G03G15/2039
    • While a recording sheet is passing through a fixing nip formed between a heating roller 41 having a heating layer and a pressing roller 42 pressed against the roller 41, a coil 43 is exited by high-frequency power from a power source and causes the layer to generate heat. An unfixed image on the recording sheet is fixed by the heat. The power source detects a zero cross timing of a rectified alternating current, detects an instantaneous value at a point a predetermined period after the zero cross timing, calculates an effective power of the alternating current based on the instantaneous value, and controls the output power to be a desired value determined based on the effective power and the surface temperature of the roller 41. Thus power input to the power source can be quickly detected and power output to the coil can be quickly and stably controlled.
    • 当记录片材通过形成在具有加热层的加热辊41和压靠在辊41上的加压辊42之间的定影辊隙时,线圈43通过来自电源的高频电力而退出, 发热。 记录纸上的未固定图像由热量固定。 电源检测整流交流电的零交叉定时,在零交叉定时之后的预定时间段检测瞬时值,基于瞬时值计算交流电的有效功率,并将输出功率控制为 是基于辊41的有效功率和表面温度确定的期望值。因此,可以快速检测到电源的输入功率,并且能够快速且稳定地控制对线圈的功率输出。
    • 9. 发明申请
    • CURSOR MERGING DEVICE AND CURSOR MERGING METHOD
    • 光标合并装置和光标合并方法
    • US20130215106A1
    • 2013-08-22
    • US13569189
    • 2012-08-08
    • Atsushi YAMAGUCHI
    • Atsushi YAMAGUCHI
    • G06T15/00
    • G06F3/038G06F3/04812G06F3/04815H04N13/128
    • With a cursor merging device, an image parallax detector detects subject-use parallax information about a subject-use stereoscopic image indicated by cursor position information. A proper parallax range determination component sets a proper parallax range, which is the range of proper parallax. A cursor parallax production component sets cursor parallax information so that the parallax of a cursor is included in a proper parallax range. A cursor stereoscopic image production component produces a cursor-use stereoscopic image on the basis of cursor parallax information. A cursor stereoscopic image merging component 6 merges the cursor-use stereoscopic image included in the proper parallax range with a subject-use stereoscopic image.
    • 利用光标合并装置,图像视差检测器检测关于由光标位置信息指示的被摄体立体图像的被摄体视差信息。 适当的视差范围确定组件设置适当的视差范围,其为适当视差的范围。 光标视差产生组件设置光标视差信息,使得光标的视差被包括在适当的视差范围内。 光标立体图像生成部件基于光标视差信息生成光标使用立体图像。 光标立体图像合成部件6将适当的视差范围中包含的光标使用立体图像与被摄体立体图像合并。
    • 10. 发明授权
    • Nitride semiconductor device
    • 氮化物半导体器件
    • US08405064B2
    • 2013-03-26
    • US13067042
    • 2011-05-04
    • Atsushi YamaguchiNorikazu ItoShinya Takado
    • Atsushi YamaguchiNorikazu ItoShinya Takado
    • H01L29/06
    • H01L29/155H01L21/02381H01L21/02458H01L21/02507H01L21/0254H01L29/2003H01L29/452H01L29/475H01L29/66462H01L29/7787
    • An inventive nitride semiconductor device includes: a substrate; a first buffer layer provided on the substrate, and having a superlattice structure which includes two types of Group III nitride semiconductor sublayers having different compositions and alternately stacked in pairs; a second buffer layer provided on the first buffer layer in contact with the first buffer layer, and having a superlattice structure which includes two types of Group III nitride semiconductor sublayers having different compositions and alternately stacked in pairs; and a device operation layer of a Group III nitride semiconductor provided on the second buffer layer; wherein an average lattice constant LC1 of the first buffer layer, an average lattice constant LC2 of the second buffer layer and an average lattice constant LC3 of the device operation layer satisfy the following expression (1): LC1
    • 本发明的氮化物半导体器件包括:衬底; 设置在基板上的第一缓冲层,具有超晶格结构,其包括具有不同组成的两种类型的III族氮化物半导体子层,并成对地交替堆叠; 设置在与第一缓冲层接触的第一缓冲层上的第二缓冲层,并且具有超晶格结构,其包括具有不同组成的两种类型的III族氮化物半导体子层,并成对地堆叠; 以及设置在所述第二缓冲层上的第III族氮化物半导体的器件工作层; 其中第一缓冲层的平均晶格常数LC1,第二缓冲层的平均晶格常数LC2和器件工作层的平均晶格常数LC3满足下式(1):LC1